SIEMENS CLX27 HiRel X-Band GaAs Power-MESFET HiFfel Discrete and Microwave Semiconductor @ For professional power amplifiers For frequencies from 500 MHz to 15 GHz Hermetically sealed microwave power package Low thermal resistance for high voltage application Power added efficiency > 55 % -@S@a Space Qualification Expected 1998 ESA/SCC Detail Spec. No.: 561 4/007, Type Variant No.s 04 to 06 ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking | Ordering Code Pin Configuration | Package 1 2 3 CLX27-00 (ql) - see below G S D |MWP-25 CLX27-05 (ql) CLX27-10 (ql) CLX27-nn: specifies output power level (see electrical characteristics) (ql) Quality Level: =P: Professional Quality, Ordering Code: 62702L119 H: High Rel Quality, Ordering Code: on request S: Space Quality, Ordering Gode: on request ES: ESA Space Quality, Ordering Gode: Q62702L118 (see order instructions for ordering example) Semiconductor Group 1of9 Draft D, Jul. 98SIEMENS CLX27 Maximum Ratings Parameter Symbol | Values Unit Drain-source voltage Vos 11 Vv Drain-gate voltage Voc 13 Vv Gate-source voltage Vos -6 Vv Drain current I, 420 mA Gate forward current I, 5 mA Compression Level P, 15 atV,.<8V dB Operation Range 1 25 at V,.<7V 3.5 at V,,.<6V Compression Level P, 3.5 at V,.56V dB Operation Range 2 Compression Level P, tod. dB Operation Range 3 Junction temperature T, 175 C Storage temperature range Ta, - 65...4.175 ae Total power dissipation P. 3.38 W Soldering temperature T.., 230 C Thermal Resistance Junction-soldering point Riis < 40 KAW Notes.: 1) Operation Range 1:80 mA <1, < 160 mA =!'ph- 2) Operation Range 2:1, > 160 mA 4) AtT, =+ 40 C. For T, > + 40 C derating is required. 5) During 15 sec. maximum. The same terminal shall not be resoldered until 3 minutes have ) ) 3) Operation Range 3:1, < 80 mA ) ) elapsed. Semiconductor Group 2o0f9 Draft D, Jul. 98SIEMENS CLX27 Electrical Characteristics (at T,=25C; unless otherwise specified) Parameter Symbol Values Unit min. typ. max. DC Characteristics Drain-source saturation current bes 180 300 420 mA Vis=2ViV.,=0V Gate threshold voltage Voth 1.2 2.2 3.2 Vv Vig=3V,1,=12mA Drain current at pinch-off, low V ,. ops 60 LA Vis = 3 V, V.,= 3.5 V Gate current at pinch-off, low V ,. loos 24 LA Vie= 3 V, V.g = 3.5 V Drain current at pinch-off, high V ,., apa s 600 LA Vig = 9.5 V,V,,=-3.5 V Gate current at pinch-off, high V ,. loos 240 LA Vis = 9-5 V,V,,=-3.5 V Transconductance g,, 130 160 ms Vis =3V,1,=120 mA Thermal resistance Runs 35 K/W Junction to soldering point Vig = 8V,1,= 120 mA, T, = +25C Semiconductor Group 3 of 9 Draft D, Jul. 981) RF Power characteristics given for power matching conditions 2) Power added efficiency: PAE = (P RFout Semiconductor Group ~ Prin) / Pao 4of9 SIEMENS CLX27 Electrical Characteristics (continued) Parameter Symbol Values Unit min. typ. max. AC Characteristics Linear power gain G,, dB V,, = 8 V, |, = 120 mA, f = 2.3 GHz, P_=0dBm CLX27-00 17.5 18.5 CLX27-05 18.0 19.0 CLX27-10 18.0 19.0 Power output at 1dB gain compr. P as dBm Vos = 8 V, Ijaeoy = 120 mA, f = 2.3 GHz CLX27-00 26.5 CLX27-05 27.3 CLX27-10 27.8 Output Power Po dBm Vos = 8 V, liaeun = 120 mA, f = 2.3 GHz, P= 10.5 dBm CLX27-00 26.0 26.5 CLX27-05 27.0 27.3 CLX27-10 27.5 27.8 Power added efficiency * PAE % Vos = 8 V, Ioneon = 120 mA, f = 2.3 GHz, P= 10.5 dBm CLX27-00 45 50 CLX27-05 48 53 CLX27-10 50 55 Draft D, Jul. 98SIEMENS CLX27 Typical Common Source S-Parameters f |S11| 27.5 dBm) in ESA Space Quality Level Further Informations: See our WWW-Pages: - Discrete and RF-Semiconductors (Small Signal Semiconductors) www.siemens.de/semiconductor/products/35/35.htm - HiRel Discrete and Microwave Semiconductors www.siemens.de/semiconductor/products/35/353 .htm Please contact also our marketing division : Tel.: Fax.: e-mail: Address: Semiconductor Group ++89 6362 4480 +4+89 6362 5568 martin. wimmers@siemens-scg.com Siemens Semiconductors, High Frequency Products Marketing, P.O.Box 801709, D-81617 Munich 8ofg Draft D, Jul. 98SIEMENS CLX27 MWP-25 Package 0.6101 2 +H +0. NS L6to1)) IS Vin| 2 a) |} L_113 {EF-tor + | 2.540.2 t 0.6 +0.1 Semiconductor Group Published by Siemens Semiconductors, High Frequency Products Marketing, P.G.Box 801709, D-81617 Munich. Siemens AG 1998. All Rights Reserved. As far as patents or other rights of third parties are concerned, liability is only assumed for components per se, not for applications, processes and circuits implemented within components or assemblies. The information describes the type of component and shall not be considered as assured characteristics. Terms of delivery and rights to change design reserved. For questions on technology, delivery and prices please contact the Offices of Semiconductor Group in Germany or the Siemens Companies and Representatives woldwide (see address list). Due to technical requirements components may contain dangerous substances. For information on the type in question please contact your nearest Siemens Office, Semiconductor Group. Siemens Semiconductors is a certified CECC and Q89000 manufacturer (this includes ISO 9000). 9of9 Draft D, Jul. 98