AP09N20H/J-HF Halogen-Free Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET Simple Drive Requirement Low On-resistance Fast Switching Characteristics D RoHS Compliant BVDSS RDS(ON) ID 200V 380m 8.6A G S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-252 package is widely preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The through-hole version (AP09N20J) is available for low-profile applications. G D S TO-252(H) G D S TO-251(J) Rating Units Absolute Maximum Ratings Symbol Parameter VDS Drain-Source Voltage 200 V VGS Gate-Source Voltage +30 V ID@TC=25 Continuous Drain Current, V GS @ 10V 8.6 A ID@TC=100 Continuous Drain Current, V GS @ 10V 5.5 A 36 A 69 W 0.55 W/ 40 mJ 8.6 A 1 IDM Pulsed Drain Current PD@TC=25 Total Power Dissipation Linear Derating Factor 2 EAS Single Pulse Avalanche Energy IAR Avalanche Current TSTG Storage Temperature Range -55 to 150 TJ Operating Junction Temperature Range -55 to 150 Thermal Data Symbol Parameter Value Unit Rthj-c Maximum Thermal Resistance, Junction-case 1.8 /W Rthj-a Maximum Thermal Resistance, Junction-ambient 110 /W Data & specifications subject to change without notice 1 200809112 AP09N20H/J-HF o Electrical Characteristics@Tj=25 C(unless otherwise specified) Symbol Parameter Test Conditions BVDSS/Tj VGS=0V, ID=1mA Breakdown Voltage Temperature Coefficient Reference to 25, ID=1mA BVDSS Drain-Source Breakdown Voltage Min. Typ. Max. Units 200 - 0.24 - V V/ RDS(ON) Static Drain-Source On-Resistance VGS=10V, ID=5A - - 380 m VGS(th) Gate Threshold Voltage VDS=VGS, ID=250uA 2 - 4 V gfs Forward Transconductance VDS=10V, ID=5A - 3.7 - S IDSS Drain-Source Leakage Current VDS=200V, VGS=0V - - 10 uA Drain-Source Leakage Current (T j=150 C) VDS=160V, VGS=0V - - 100 uA Gate-Source Leakage VGS= +30V - - +100 nA ID=8.6A - 23 37 nC o IGSS 3 Qg Total Gate Charge Qgs Gate-Source Charge VDS=160V - 4 - nC Qgd Gate-Drain ("Miller") Charge VGS=10V - 13 - nC 3 td(on) Turn-on Delay Time VDD=100V - 12 - ns tr Rise Time ID=8.6A - 25 - ns td(off) Turn-off Delay Time RG=10,VGS=10V - 36 - ns tf Fall Time RD=11.6 - 16 - ns Ciss Input Capacitance VGS=0V - 500 800 pF Coss Output Capacitance VDS=25V - 90 - pF Crss Reverse Transfer Capacitance f=1.0MHz - 40 - pF Min. Typ. IS=8.6A, VGS=0V - - 1.3 V Source-Drain Diode Symbol Parameter 3 Test Conditions Max. Units VSD Forward On Voltage trr Reverse Recovery Time IS=8.6A, VGS=0V, - 225 - ns Qrr Reverse Recovery Charge dI/dt=100A/s - 2260 - nC Notes: 1.Pulse width limited by safe operating area. o 2.Starting Tj=25 C , VDD=50V , L=1mH , RG=25 , IAS=8.6A. 3.Pulse width <300us , duty cycle <2%. THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION. USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED. APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. 2 AP09N20H/J-HF 18 10 T C =25 C 10V 8.0V 7.0V T C =150 o C 8 14 12 ID , Drain Current (A) ID , Drain Current (A) 10V 8.0V o 16 7.0V 10 8 6 6 4 5.0V 4 2 5.0V 2 V G =4.0V V G =4.0V 0 0 0 2 4 6 8 10 12 0 2 4 6 8 10 12 V DS , Drain-to-Source Voltage (V) V DS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 2.8 1.6 I D =5A V GS =10V 2.4 Normalized RDS(ON) Normalized BVDSS (V) 1.4 1.2 1 2 1.6 1.2 0.8 0.8 0.4 0.6 0 -50 0 50 100 150 -50 o 0 50 100 150 o T j , Junction Temperature ( C) T j , Junction Temperature ( C ) Fig 3. Normalized BVDSS v.s. Junction Fig 4. Normalized On-Resistance Temperature v.s. Junction Temperature 5 7 6 4 VGS(th) (V) IS(A) 5 4 3 T j =150 o C 3 T j =25 o C 2 2 1 1 0 0 0.2 0.4 0.6 0.8 1 1.2 V SD , Source-to-Drain Voltage (V) Fig 5. Forward Characteristic of Reverse Diode 1.4 -50 0 50 100 150 T j , Junction Temperature ( o C ) Fig 6. Gate Threshold Voltage v.s. Junction Temperature 3 AP09N20H/J-HF 15 f=1.0MHz 1000 C iss V DS =100V V DS =120V V DS =160V 9 C (pF) VGS , Gate to Source Voltage (V) I D =8.6A 12 100 C oss 6 C rss 3 0 10 0 6 12 18 24 30 1 5 9 13 17 21 25 29 V DS , Drain-to-Source Voltage (V) Q G , Total Gate Charge (nC) Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics 1 Normalized Thermal Response (Rthjc) 100 100us 10 ID (A) 1ms 10ms 1 100ms T c =25 o C Single Pulse DC 0 Duty factor=0.5 0.2 0.1 0.1 0.05 PDM t T 0.02 0.01 Duty factor = t/T Peak Tj = PDM x Rthjc + T C Single Pulse 0.01 1 10 100 1000 0.00001 0.0001 V DS , Drain-to-Source Voltage (V) Fig 9. Maximum Safe Operating Area 0.001 0.01 0.1 1 10 t , Pulse Width (s) Fig10. Effective Transient Thermal Impedance VG VDS 90% QG 10V QGS QGD 10% VGS td(on) tr td(off) tf Fig 11. Switching Time Waveform Charge Q Fig 12. Gate Charge Waveform 4 ADVANCED POWER ELECTRONICS CORP. Package Outline : TO-252 D D1 E2 MIN NOM MAX A2 1.80 2.30 2.80 A3 0.40 0.50 0.60 B1 0.40 0.70 1.00 D 6.00 6.50 7.00 D1 4.80 5.35 5.90 E3 3.50 4.00 4.50 E3 E1 B1 F1 e Millimeters SYMBOLS F 2.20 2.63 3.05 F1 0.50 0.85 1.20 E1 5.10 5.70 6.30 E2 0.50 1.10 1.80 e -- 2.30 -- C 0.35 0.50 0.65 F e 1.All Dimensions Are in Millimeters. 2.Dimension Does Not Include Mold Protrusions. R : 0.127~0.381 A2 A3 (0.1mm C Part Marking Information & Packing : TO-252 Part Package Code 09N20H LOGO YWWSSS Date Code (YWWSSS) YLast Digit Of The Year WWWeek SSSSequence If last "S" is numerical letter : Rohs product If last "S" is English letter : HF & Rohs product 5 ADVANCED POWER ELECTRONICS CORP. Package Outline : TO-251 D Millimeters A SYMBOLS c1 D1 E2 E1 E A1 B2 F B1 c e MIN NOM MAX A 2.20 2.30 2.40 A1 0.90 1.20 1.50 B1 0.40 0.60 0.80 B2 0.60 0.85 1.05 c c1 0.40 0.50 0.60 0.40 0.50 0.60 D 6.40 6.60 6.80 D1 4.80 5.20 5.50 E 6.70 7.00 7.30 E1 5.40 5.60 5.80 E2 1.30 1.50 1.70 e ---- 2.30 ---- F 7.00 8.30 9.60 1.All Dimensions Are in Millimeters. 2.Dimension Does Not Include Mold Protrusions. e Part Marking Information & Packing : TO-251 Part Number 09N20J YWWSSS Package Code LOGO Date Code (YWWSSS) Y Last Digit Of The Year WW Week SSS Sequence If last "S" is numerical letter : Rohs product If last "S" is English letter : HF & Rohs product 6