Advanced Power N-CHANNEL ENHANCEMENT MODE
Electronics Corp. POWER MOSFET
▼ Simple Drive Requirement BVDSS 200V
▼ Low On-resistance RDS(ON) 380mΩ
▼ Fast Switching Characteristics ID8.6A
▼ RoHS Compliant
Description
Absolute Maximum Ratings
Symbol Units
VDS Drain-Source Voltage V
VGS Gate-Source Voltage V
ID@TC=25℃Continuous Drain Current, VGS @ 10V A
ID@TC=100℃Continuous Drain Current, VGS @ 10V A
IDM Pulsed Drain Current1A
PD@TC=25℃Total Power Dissipation W
W/℃
EAS Single Pulse Avalanche Energy2mJ
IAR Avalanche Current A
TSTG ℃
TJOperating Junction Temperature Range ℃
Thermal Data
Symbol Value Unit
Rthj-c Maximum Thermal Resistance, Junction-case 1.8 ℃/W
Rthj-a Maximum Thermal Resistance, Junction-ambient 110 ℃/W
Data & specifications subject to change without notice
200809112
Halogen-Free Product
AP09N20H/J-HF
40
-55 to 150
Parameter
8.6
+30
8.6
5.5
Parameter Rating
200
1
Storage Temperature Range -55 to 150
36
69
Linear Derating Factor 0.55
GDSTO-251(J)
GDSTO-252(H)
A
dvanced Power MOSFETs from APEC provide the designer with
the best combination of fast switching, ruggedized device design,
low on-resistance and cost-effectiveness.
The TO-252 package is widely preferred for all commercial-industrial
applications at power dissipation levels to approximately 50 watts.
The through-hole version (AP09N20J) is available for low-profile
applications.
G
D
S
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol Parameter Test Conditions Min. Typ. Max. Units
BVDSS Drain-Source Breakdown Voltage VGS=0V, ID=1mA 200 - - V
ΔBVDSS/ΔTjBreakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA - 0.24 - V/℃
RDS(ON) Static Drain-Source On-Resistance VGS=10V, ID=5A - - 380 mΩ
VGS(th) Gate Threshold Voltage VDS=VGS, ID=250uA 2 - 4 V
gfs Forward Transconductance VDS=10V, ID=5A - 3.7 - S
IDSS Drain-Source Leakage Current VDS=200V, VGS=0V - - 10 uA
Drain-Source Leakage Current (Tj=150oC) VDS=160V, VGS=0V - - 100 uA
IGSS Gate-Source Leakage VGS= +30V - - +100 nA
QgTotal Gate Charge3ID=8.6A - 23 37 nC
Qgs Gate-Source Charge VDS=160V - 4 - nC
Qgd Gate-Drain ("Miller") Charge VGS=10V - 13 - nC
td(on) Turn-on Delay Time3VDD=100V - 12 - ns
trRise Time ID=8.6A - 25 - ns
td(off) Turn-off Delay Time RG=10Ω,VGS=10V - 36 - ns
tfFall Time RD=11.6Ω-16-ns
Ciss Input Capacitance VGS=0V - 500 800 pF
Coss Output Capacitance VDS=25V - 90 - pF
Crss Reverse Transfer Capacitance f=1.0MHz - 40 - pF
Source-Drain Diode
Symbol Parameter Test Conditions Min. Typ. Max. Units
VSD Forward On Voltage3IS=8.6A, VGS=0V - - 1.3 V
trr Reverse Recovery Time IS=8.6A, VGS=0V, - 225 - ns
Qrr Reverse Recovery Charge dI/dt=100A/µs - 2260 - nC
Notes:
1.Pulse width limited by safe operating area.
2.Starting Tj=25oC , VDD=50V , L=1mH , RG=25Ω , IAS=8.6A.
3.Pulse width <300us , duty cycle <2%.
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
AP09N20H/J-HF
AP09N20H/J-H
F
Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics
Fig 3. Normalized BVDSS v.s. Junction Fig 4. Normalized On-Resistance
Temperature v.s. Junction Temperature
Fi
g
5. Forward Characteristic o
f
Fig 6. Gate Threshold Voltage v.s.
Reverse Diode Junction Temperature
3
0.6
0.8
1
1.2
1.4
1.6
-50 0 50 100 150
Tj , Junction Temperature ( oC)
Normalized BVDSS (V)
0
0.4
0.8
1.2
1.6
2
2.4
2.8
-50 0 50 100 150
Tj , Junction Temperature ( oC )
Normalized RDS(ON)
ID=5A
VGS =10V
0
2
4
6
8
10
12
14
16
18
024681012
VDS , Drain-to-Source Voltage (V)
ID , Drain Current (A)
TC=25oC10V
8.0V
7.0V
5.0V
VG=4.0V
0
2
4
6
8
10
024681012
VDS , Drain-to-Source Voltage (V)
ID , Drain Current (A)
TC=150oC10V
8.0V
7.0V
VG=4.0V
5.0V
0
1
2
3
4
5
6
7
0 0.2 0.4 0.6 0.8 1 1.2 1.4
VSD , Source-to-Drain Voltage (V)
IS(A)
Tj=25oCTj=150oC
1
2
3
4
5
-50 0 50 100 150
Tj , Junction Temperature ( o C )
VGS(th) (V)
AP09N20H/J-HF
Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics
Fig 9. Maximum Safe Operating Area Fig10. Effective Transient Thermal Impedance
Fig 11. Switching Time Waveform Fig 12. Gate Charge Waveform
4
td(on) trtd(off) tf
VDS
VGS
10%
90%
Q
VG
10V
QGS QGD
QG
Charge
10
100
1000
1 5 9 1317212529
VDS , Drain-to-Source Voltage (V)
C (pF)
f
=1.0MHz
Ciss
Coss
Crss
0
3
6
9
12
15
0 6 12 18 24 30
QG , Total Gate Charge (nC)
VGS , Gate to Sourc e Voltage ( V)
VDS =100V
VDS =120V
VDS =160V
ID=8.6A
0.01
0.1
1
0.00001 0.0001 0.001 0.01 0.1 1 10
t , Pulse Width (s)
Normalized Th e rmal Re spon se (Rthjc)
PDM
Duty factor = t/T
Peak Tj = PDM x Rthjc + TC
t
T
0.02
0.01
0.05
0.1
0.2
Duty factor=0.5
Single Pulse
0
1
10
100
1 10 100 1000
VDS , Drain-to-Source Voltage (V)
ID (A)
Tc=25oC
Single Pulse
100us
1ms
10ms
100ms
DC
Package Outline : TO-252
Millimeters
MIN NOM MAX
A2 1.80 2.30 2.80
A3 0.40 0.50 0.60
B1 0.40 0.70 1.00
D 6.00 6.50 7.00
D1 4.80 5.35 5.90
E3 3.50 4.00 4.50
E3 F 2.20 2.63 3.05
F1 0.50 0.85 1.20
E1 5.10 5.70 6.30
E2 0.50 1.10 1.80
e -- 2.30 --
C 0.35 0.50 0.65
1.All Dimensions Are in Millimeters.
2.Dimension Does Not Include Mold Protrusions.
Part Marking Information & Packing : TO-252
SYMBOLS
ADVANCED POWER ELECTRONICS CORP.
e
e
D
D1
E2
E1
F
B1 F1
A2
A3 C
R : 0.127~0.381
(
0.1mm
Part Package Code
09N20H
YWWSSS Date Code (YWWSSS)
Y：Last Digit Of The Year
WW：Week
SSS：Sequence
If last "S" is numerical letter : Rohs product
If last "S" is English letter : HF & Rohs product
LOGO
5
Package Outline : TO-251
MIN NOM MAX
A 2.20 2.30 2.40
A1 0.90 1.20 1.50
B1 0.40 0.60 0.80
B2 0.60 0.85 1.05
c0.40 0.50 0.60
c1 0.40 0.50 0.60
D 6.40 6.60 6.80
D1 4.80 5.20 5.50
E 6.70 7.00 7.30
E1 5.40 5.60 5.80
E2 1.30 1.50 1.70
e---- 2.30 ----
F 7.00 8.30 9.60
1.All Dimensions Are in Millimeters.
2.Dimension Does Not Include Mold Protrusions.
Part Marking Information & Packing : TO-251
SYMBOLS
ADVANCED POWER ELECTRONICS CORP.
Millimeters
09N20J
YWWSSS
Part Numbe
r
Package Code
A
c1
A1
c
e
D
E2
E1 E
B1
B2
F
D1
e
Date Code (YWWSSS)
Y：Last Digit Of The Year
WW ：Week
SSS ：Sequence
If last "S" is numerical letter : Rohs product
If last "S" is English letter : HF & Rohs product
LOGO
6
