MOTOROLA SC {XSTRS/R FY qb De ese7254 ooanzaia 9 6367254 MOTOROLA SC (XSTRS/R F)_ t " MAXIMUM RATINGS 96D 81811. D T2142 Rating Symbol | NPN | PNP Unit NPN Collector-Emitter Voltage VcEO Vde MPS6512, MPS6513 30 MPS6512 MPS6514, MPS6515 25 _ MPS6516 thru MPS6518 - 40 Collector-Base Voltage VcBo Vde MPS6512 thru MPS6515 40 - PNP MPS6516 thru MPS6518 _ 40 MPSS = | 2 MPS6516 Emitter-Base Voltage VEBO 4.0 4.0 Vde Collector Current Continuous le 100 100 mAdc thru M PS65 19 Total Device Dissipation @ Ta = 25C Pp 625 mw CASE 29-04, STYLE 1 Derate above 26C 5.0 mWwrc TO-92 (TO-226AA) Total Device Dissipation @ Tc = 25C Pp 15 Watts Derate above 25C 12 mWPC Operating and Storage Junction Ty Tstg 5 to + 150 c \ Temperature Range 1 THERMAL CHARACTERISTICS 4 Characteristic Symbol Max Unit - ~ y AMPLIFIER TRANSISTOR Thermal Resistance, Junction to Case Rajc 83.3 Cw Thermal Resistance, Junction to Ambient Raa 200 C Reter to 2N4125 for graphs. ELECTRICAL CHARACTERISTICS (Tp = 25C unless otherwise noted.) | . Characteristic [ Symbol | Min Typ Max Unit OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage V(BRICEO Vde (ic = 0.5 mAde, Ig = 0) MPS6512, MPS6513 30 _ _ MPS6514, MPS6515 25 _ _ {lc = 0.5 mAdc, ig = 0) MPS6516 thru MPS6518 40 _ _ MPS6519 25 - _ Emitter-Base Breakdown Voltage (Ig = 10 pAde, Ic = 0) VIBRJEBO 4.0 - _- Vde (IE = 10 pAds, Ic = 0} 4.0 - _ Collector Cutoff Current IcBo Adc (Vcp = 30 Vdc, ig = 0) - 0.05 (Vcop = 30 Vde, Ie = 0) MPS6516 thru MPS6518 _ 0.05 (Veg = 20 Vdc, Ip = 0) MPS6519 _ - 0.05 ON CHARACTERISTICS OC Current Gain hre _- (Ig = 2.0 mAde, VCE = 10 Ve) MPS6512 50 - 100 MPS6513 90 _ 180 MPS6514 160 _- 300 MPS6515 250 _ 500 (I = 100 mAde, Vcg = 10 Vde)(1) MPS6512 30 - - MPS6513 60 - - MPS6514 30 _ - MPS6515 150 _ - (le = 2.0 mAdc, Veg = 10 Vde) MPS6516 50 - 100 . MPS6517 90 _ 180 MPS6518 150 _ 300 MPS6519 250 - 500 (Ic = 100 mAde, Vee = 10 Vdel(1) MPS6516 30 _ _ MPS6517 60 MPS6518 90 _ =~ MPS6519 150 _ Collector-Emitter Saturation Voltage (ic = 50 mAdc, Ig = 5.0 mAdc) VcE {sat} - 0.5 Vde (Ic = 50 mAde, Ip = 5.0 mAdc)} ad - 0.5 SMALL-SIGNAL CHARACTERISTICS Output Capacitance (Vcg = 10 Vde, ig = 0, f = 100 kHz) Cobo _ _ 3.5 pF (Vop = 10 Vde, IE = 0, f = 100 kHz) - - 4.0 (1) Pulse Test: Pulse Width < 300 us, Duty Cycle < 2,0%. MOTOROLA SMALL-SIGNAL SEMICONDUCTORS 2-218MOTOROLA SC {XSTRS/R FT 6367254 MOTOROLA SC (XSTRS/R F)_ ao de Beze7esy ooaiars & 96D 81815 OD T-29-/7 - MPS6544 CASE 29-04, STYLE 2 TO-92 (TO-226AA) MAXIMUM RATINGS Rating Symbol Value Unit Collectc itter Voltage VcEO 45 Vde iS 3 Collector Collector-Base Voltage VcBO 60 Vde | i Emitter-Base Voltage VEBO 4.0 Vde y 1 j Total Device Dissipation @ Ta = 25C Pp 350 mw Base t Derate above 25C 2.81 mWrC iff Total Device Dissipation @ Ta = 60C Pp 210 mw 2 3 2 Emitter Operating and Storage Junction Ty. Tstg | 55 to +135 C : Temperature Range AMPLIFIER TRANSISTOR THERMAL CHARACTERISTICS NPN SILICON Characteristic Symbol! Max Unit Thermal Resistance, Junction to Ambient Raja 357 CAV ELECTRICAL CHARACTERISTICS (Ta = 25C unless otherwise noted.} Refer to MPSHZ20 for graphs. | Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage VIBR)CEO 45 _ Vde (Ic = 1.0 mAde, IE = 0) Collector-Base Breakdown Voitage V(BR)CBO 60 Vde {lg = 10 pAde, IE = 0) Emitter-Base Breakdown Voltage V(BR)EBO 4.0 - Vde (lg = 10 pAde, Ig = 0) Collector Cutoff Current IcBo 0.5 pAdc (VcB = 35 Vdc, Ip = 0) ON CHARACTERISTICS DC Current Gain hee 20 _ - (Ic = 30 mAde, VcE = 10 Vdc} Collector-Emitter Saturation Voltage VcE(sat} _ 0.5 Vde (Ic = 30 mAdc, Ip = 3.0 mAdc} ' SMALL-SIGNAL CHARACTERISTICS - Common-Emitter Reverse Transfer Capacitance Cre _- 0.65 pF (Vcg = 10 Vde, ic = 0, f = 100 kHz) Output Admittance Yoe _ 0.10 mmhos (ic = 10 mAds, Vce = 10 Vde, f = 45 MHz) Output Voltage Vout 4.0 - Vde (VintRMS) = 12 mV, f = 45 MHz} MOTOROLA SMALL-SIGNAL SEMICONDUCTORS 2-222MOTOROLA SC {XSTRS/R FI ib DE ffb3b7254 0081820 oO T ~ 6367254 MOTOROLA SC (XSTRS/R F) - 96b 81820 OD 1 7 39-2/ MAXIMUM RATINGS M PS6576 Rating Symbol Value Unit Collactor-Emitter Voltage VCEO 45 Vde CASE 29-04, STYLE 1 Collector-Base Voltage VcBo 46 Vde TO-982 (TO-226AA) Emitter-Base Voltage VEBO 4.0 Vde Collector Current Continuous Ic 100 mAde Total Device Dissipation @ Ta = 25C Pp 625 mw 3 Collector Derate above 25C 5.0 mWPC Totat Device Dissipation @ Tc = 26C Pp 1.5 Watt 2 Derate above 25C 12 mwrc ; Base Operating and Storage Junction TJ: Tstg | 56 to +150 C i 2 3 Temperature Range 1 Emitter THERMAL CHARACTERISTICS Characteristic Symbol! Max Unit AUDIO TRANSISTOR Thermal Resistance, Junction to Case Raic 83.3 c Thermal Resistance, Junction to Ambient | Rajat) 200 *CimW NPN SILICON (1) Raja is measured with the device soldered into a typical printed circuit board. Refer to MPS3903 for graphs. ELECTRICAL CHARACTERISTICS (Ta = 26C unless otherwise noted.) Characteristic Symbo! Min Max Unit OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage(2) VIBR}CEO 45 _ Vde {Ic = 1.0 mAde, IB = 0} Collector Cutoff Current Icbo _ 100 nAdc (Vcpg = 45 Vde, Ig = 0) Emitter Cutoff Current lIEBO _ 100 nAdc (Veg = 4.0 Vde, Ic = 0) ON CHARACTERISTICS DC Current Gain hfe 100 300 _ (Ic = 1.0 mAdc, Veg = 5.0 Vdc} Collector-Emitter Saturation Voltage VcE(sat) _ 05 Vde (Io = 10 mAde, Ig = 1.0 mAdc) Base-Emitter On Voltage(2) VBE(on)} _ 0.8 Vdc (lg = 10 mAdc, Voge = 5.0 Vde) SMALL-SIGNAL CHARACTERISTICS 1 Current-Gain Bandwidth Praduct(2) fT 100 350 MHz : (Ig = 10 mAdc, VcE = 5.0 Vde, f = 100 kHz} Output Capacitance Cobo _ 12 pF (VcR = 12 Vde, IE = 0, f = 100 kHz} (2) Pulse Test: Pulse Width < 300 us, Duty Cycle < 2.0%. MOTOROLA SMALL-SIGNAL SEMICONDUCTORS 2-227MOTOROLA SC {XSTRS/R FF po fb De Bese7esy ooaraas oo 6367254 MOTOROLA SC (XSTRS/R F) MAXIMUM RATINGS mo 96D 81888 DBD TT - 29-2/ Rating Symbol Value Unit Collector-Emitter Voltage VcEO 80 Vde Emitter-Base Voltage VEBO 4.0 Vde Collector Current Continuous Ic 100 mAdc Total Device Dissipation @ Ta = 26C Pp 625 Derate above 25C 5.0 mw mwrc Total Device Dissipation @ Tc = 25C Pp 15 Derate above 25C 12 Watt mwrc Operating and Storage Junction Temperature Range TJ, Tstg | ~55 to +150 THERMAL CHARACTERISTICS Characteristic Symbol! Max Unit Thermal Resistance, Junction to Case Resc 83.3 CAV Thermal Resistance, Junction to Ambient | Raya(t) 200 SCAN (1) Raja is measured with the device soldered into a typical printed circuit board. ELECTRICAL CHARACTERISTICS (Ta = 25C unless otherwise noted.) Characteristic OFF CHARACTERISTICS ISS f MPSH54 MPSH55 CASE 29-04, STYLE 1 TO-92 (TO-226AA) 3 Collector 2 Base 1 Emitter AMPLIFIER TRANSISTOR PNP SILICON Symbol | Min Typ Max Unit Collector-Emitter Breakdown Voltage (Ig = 1.0 mAde, Ip = 0} V(BRICEO 80 _ ~ Vde Collector-Base Breakdown Voltage (Ic = 100 pAdc, ip = 0) ViBR)}CBO 80 _ - Vde Emitter-Base Breakdown Voltage (lz = 100 pAde, Io = 0) V(BRIEBO Vde Collector Cutoff Current (Vcp = 60 Vdc, Ig = 0) IcBo nAde Emitter Cutoff Current (Veg = 3.0 Vde, Ic = 0) 'EBO nAdc ON CHARACTERISTICS DC Current Gain (Ip = 1.5 mAde, Voce = 10 Vde) MPSH54 MPSH55 hre 30 _ 120 30 _ 150 Collector-Emitter Saturation Voltage {ic = 10 mAde, Ig = 1.0 mAdc) VCE(sat) 0.25 Vde SMALL-SIGNAL CHARACTERISTICS Current-Gain Bandwidth Product {Ic = 1.8 mAdc, Vcg = 10 Vde, f = 100 MHz) 80 _ - MHz Collector-Base Capacitance (Vcog = 10 Vde, f = 1.0 MHz) Output Admittance (Ic = 1.5 mAdc, Vcg = 10 Vdc, f = 1.0 kHz} umhos Noise Figure (lc = 1.5 mAdc, Vce = 10 Vdc, Rg = 50 ohms, f = 1.0 MHz) MPSH54 MOTOROLA SMALL-SIGNAL SEMICONDUCTORS 2-295 | i4h DE [ 6 bae7es4 ooas 7 ff. 367254 MOTOROLA SC CXSTRS/R F) MAXIMUM RATINGS Rating Symbol Value Unit Reverse Voltage VR 4100 Vde Recurrent Peak Forward Current Ip 200 mA Peak Forward Surge Current IFMisurge) 500 mA (Pulse Width = 10 psec) Power Dissipation @ Ta = 26C Pp(1) 625 mW Derate above 25C 5.0 mwrc Operating and Storage Junction Ty. Tstg(t) | 55 to +135 ed Temperature Range 96D 81919 Dd T= 03-07 MSD6100 CASE 29-04, STYLE 3 TO-92 (TO-226AA) INS Anode 1 2 Anode 2 3 Cathode DUAL SWITCHING DIODE COMMON CATHODE ELECTRICAL CHARACTERISTICS (Ta = 25C unless otherwise noted.) Cheracteristic Symbol Min Max Unit Breakdown Voltage ViBR) 100 - Vde (pry = 100 pAdc} Reverse Current IR pAdc (Vp = 100 Vde} - 5.0 (VR = 50 Vde} _ 0.1 (VR = 50 Vde, Ta = 125C) _ 20 Forward Voltage Ve Vde (ip = 1.0 mAde]} 0.55 0.7 (lp = 10 mAdc} 0.67 0.82 (lp = 100 mAde) 0.75 Ww Capacitance c - 1.5 pF (VR = 0) Reverse Recovery Time ter _ 4.0 ns (lp = IR = 10 mAdc, VR = 5.0 Vde, ip = 1.0 mAdc} {1} Continuous package improvements have enhanced these guaranteed Maximum Ratings as follows: Pp = 1.0 W @ Te = 28C, Derate above 25C 8.0 mW/C, Ty = 65 to + 150C, gic = 125C/W. MOTOROLA SMALL-SIGNAL SEMICONDUCTORS 2-326MOTOROLA SC {XSTRS/R FI 4b pe Pf usn7254 OO8is4s 4 i weer ee *FR-5S = 1.0 x 0.75 x 0.62 in. **Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina. DEVICE MARKING | Bcw29 = C1; BCW20 = C2 6D 81945 0D - 8367254 MOTOROLA SC CXSTRS/R. F) MAXIMUM RATINGS - -- ' 7-2 7 - 9 Rating Symbol! Value Unit 7 Collector-Emitter Voltage VcEO 32 Vde BCW29 Collector-Base Voltage VcBO 32 Vde Emitter-Base Voltage VEBO 5.0 Vde BCW30 Collector Current Continuous Ic 100 mAdc CASE 318-02/03, STYLE 6 SOT-23 (TO-236AA/AB) THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Total Device Dissipation FR-5 Board,* Pp 228 mw Ta = 26C 3 Collector Derate above 25C 1.8 mwrc & 3 Thermal Resistance Junction to Ambient Resa 556 CimWw 1 rr 1 eo Base Total Device Dissipation Pb 300 mw 2 Alumina Substrate,** Ta = 25C . Derate above 25C 2.4 mwrc 2 Emitter Thermal Resistance Junction to Ambient Rasa 417 CimW Junction and Storage Temperature Ty. Tstg 150 c GENERAL PURPOSE TRANSISTOR PNP SILICON ELECTRICAL CHARACTERISTICS (Ta = 25C unless otherwise noted,} Refer to 2N5086 for graphs. | symbol | Min Max | | Char i Unit OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage ViBRICEO 32 ~ Vde {i = 2.0 mAdc, Ip = 0) Collector-Emitter Breakdown Voitage VIBRICES 32 _ Vde (ic = 100 pAdc, Veg = 0) Coltector-Base Breakdown Voltage ViBRICBO 32 _ Vde (Ic = 10 pAde, Ip = 0) Emitter-Base Braakdown Voltage VIBR)EBO 5.0 _ Vde (IE = 10 pAdc, Ic = 0) Collector Cutoff Current IcBo (Vcp = 32 Vde, lg = 0) - 100 nAde (Vop = 42 Vde, ig = 0, Ta = 100C) - 10 pAdc ON CHARACTERISTICS DC Current Gain bre (ig = 2.0 mAde, Voge = 5.0 Vde} Bcw29 120 260 _ ! BCW30 215 500 _- ; Collector-Emitter Saturation Voltage VCE(sat) _- 0.3 Vde (Ic = 10 mAdc, Ip = 0.5 mAdc) Base-Emitter On Voltage VBE(on) 0.6 0.76 Vde . (lg = 2.0 mAde, Veg = 5.0 Vde) SMALL-SIGNAL CHARACTERISTICS Output Capacitance Cobo _ 7.0 pF (le = 0, Voce = 10 Vde, f = 1.0 MHz) Noise Figure NE _ 10 dB . (ig = 0.2 mAdc, Veg = 5.0 Vde, Rg = 2.0 kQ, f = 1.0 kHz, BW = 200 Hz) MOTOROLA SMALL-SIGNAL SEMICONDUCTORSMOTOROLA SC {XSTRS/R FI 4b pe Bosu7254 OO81946 weet ee een F = "6367254 MOTOROLA SC CXSTRS/R F) 86D 81946 D | MAXIMUM RATINGS y _ ~ Symbol Value an T " 2 7 " oO 7 a vie BCW31 BCW33 Emitter-Base Voltage VEBO 5.0 Vde Collector Current Continuous Ic 100 mAdc a i i t l Rating Coliector-Emitter Voltage Collector-Base Voltage ON J manna Tie ne THERMAL CHARACTERISTICS Characteristic Symbol! Unit CASE 318-02/03, STYLE 6 SOT-23 (TO-236AA/AB) Total Device Dissipation FR-5 Board,* Pp 225 mW Ta = 25C Derate above 25C 1.8 Thermal Resistance Junction to Ambient RaJaA 556 Total Device Dissipation Pp 300 : 1 1 oe Bass Alumina Substrate,** Ta = 25C 2 . Derate above 25C 2.4 mWPC 2 Emitter Raja 417 CimwW Ty. Tstg 150 c 3 Collector mWwrc CimW mw Thermal Resistance Junction to Ambient Junction and Storage Temperature *FR-5 = 1.0 x 0.75 x 0.62 in. **Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina. DEVICE MARKING | Bcws1 = D1; BCW33 = D3 | GENERAL PURPOSE TRANSISTOR NPN SILICON Refer to MPS3904 for graphs. ELECTRICAL CHARACTERISTICS (Ta = 25C unless otherwise noted.) [ Characteristic OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage {Ie = 2.0 mAds, Ig = 0) Collector-Base Breakdown Voltage (ig = 10 pAde, Ig = 0) Emitter-Base Breakdown Voltage (ig = 10 nAdc, I = 0) ON CHARACTERISTICS DC Current Gain (ic = 2.0 mAdc, Veg = 5.0 Vde) [ Symbol | Min Unit V(BR)CEO 20 - Vde ViBR)CBO 30 _ Vde 5.0 _ Vdc VBRIEBO hfe 110 220 420 860 VcE(sat) - 0.25 BcW31 BCW33 Collector-Emitter Saturation Voltage Vde {lo = 10 mAdce, Ig = 0.5 mAdc) Base-Emitter On Voltage (Ic = 2.0 mAdc, Vcg = 5.0 Vde} 1 SMALL-SIGNAL CHARACTERISTICS Output Capacitance (le = 0, Vcop = 10 Vde, f = 1.0 MHz) Noise Figure NEF _ 10 dB (Ic = 0.2 mAdc, Voge = 5.0 Vde, Rg = 2.0 kn, f = 1.0 kHz, BW = 200 Hz) enpeererenren 0.55 0.70 Vde VBE{on) Cobo 4.0 pF MOTOROLA SMALL-SIGNAL SEMICONDUCTORS 3-11