AP0803GMT-HF Halogen-Free Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET Simple Drive Requirement D SO-8 Compatible Low On-resistance 30V RDS(ON) 8.5m ID G RoHS Compliant BVDSS 50A S D Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. D D D The PMPAK 5x6 package is special for DC-DC converters application and the foot print is compatible with SO-8 with backside heat sink. S S S G PMPAK 5x6 Absolute Maximum Ratings Symbol Parameter Rating Units VDS Drain-Source Voltage 30 V VGS Gate-Source Voltage +20 V ID@TC=25 Continuous Drain Current ID@TA=25 ID@TA=70 50 A Continuous Drain Current 3 19 A Continuous Drain Current 3 15 A 160 A 29.7 W 5 W 16.2 mJ 1 IDM Pulsed Drain Current PD@TC=25 Total Power Dissipation PD@TA=25 Total Power Dissipation 4 EAS Single Pulse Avalanche Energy TSTG Storage Temperature Range -55 to 150 TJ Operating Junction Temperature Range -55 to 150 Thermal Data Symbol Rthj-c Rthj-a Parameter Maximum Thermal Resistance, Junction-case Maximum Thermal Resistance, Junction-ambient Data & specifications subject to change without notice 3 Value Units 4.2 /W 25 /W 1 200809256 AP0803GMT-HF Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Units BVDSS Drain-Source Breakdown Voltage VGS=0V, ID=250uA 30 - - V RDS(ON) Static Drain-Source On-Resistance2 VGS=10V, ID=30A - - 8.5 m VGS=4.5V, ID=20A - - 13 m VGS(th) Gate Threshold Voltage VDS=VGS, ID=250uA 1 - 3 V gfs Forward Transconductance VDS=10V, ID=20A - 20 - S IDSS Drain-Source Leakage Current VDS=30V, VGS=0V - - 1 uA IGSS Gate-Source Leakage VGS=+20V - - +100 nA ID=30A - 5.1 8 nC 2 Qg Total Gate Charge Qgs Gate-Source Charge VDS=15V - 1.5 - nC Qgd Gate-Drain ("Miller") Charge VGS=4.5V - 3.1 - nC VDS=15V - 7 - ns 2 td(on) Turn-on Delay Time tr Rise Time ID=30A - 80 - ns td(off) Turn-off Delay Time RG=3.3,VGS=10V - 15 - ns tf Fall Time RD=0.5 - 4 - ns Ciss Input Capacitance VGS=0V - 500 800 pF Coss Output Capacitance VDS=25V - 180 - pF Crss Reverse Transfer Capacitance f=1.0MHz - 75 - pF Rg Gate Resistance f=1.0MHz - 2.8 4.2 Min. Typ. IS=20A, VGS=0V - - 1.3 V IS=10A, VGS=0V, - 23 - ns dI/dt=100A/s - 15 - nC Source-Drain Diode Symbol VSD Parameter 2 Forward On Voltage 2 trr Reverse Recovery Time Qrr Reverse Recovery Charge Test Conditions Max. Units Notes: 1.Pulse width limited by Max. junction temperature 2.Pulse test 3.Surface mounted on 1 in2 copper pad of FR4 board, t <10sec, 60oC/W at steady state. 4.Starting Tj=25oC , VDD=25V , L=0.1mH , RG=25 , IAS=18A. THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION. USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED. APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. 2 AP0803GMT-HF 100 160 10V 7.0V 6.0V ID , Drain Current (A) 10V 7.0V 6.0V 5.0V o T C =150 C 80 ID , Drain Current (A) o T C =25 C 120 5.0V 80 V G = 4.0 V 60 V G =4.0V 40 40 20 0 0 0.0 1.0 2.0 3.0 4.0 0.0 5.0 V DS , Drain-to-Source Voltage (V) 2.0 3.0 4.0 5.0 6.0 V DS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 2.0 36 I D =30A V G =10V I D =20A T C =25 o C Normalized RDS(ON) 28 RDS(ON) (m) 1.0 20 1.6 1.2 0.8 12 0.4 4 2 4 6 8 -50 10 0 50 100 150 o V GS , Gate-to-Source Voltage (V) T j , Junction Temperature ( C) Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature 1.6 30 o T j =150 C Normalized VGS(th) (V) T j =25 o C IS(A) 20 10 1.2 0.8 0.4 0 0.0 0 0.4 0.8 1.2 V SD , Source-to-Drain Voltage (V) Fig 5. Forward Characteristic of Reverse Diode 1.6 -50 0 50 100 150 T j , Junction Temperature ( o C) Fig 6. Gate Threshold Voltage v.s. Junction Temperature 3 AP0803GMT-HF 12 f=1.0MHz 600 I D =30A 500 V DS =15V V DS =18V V DS =24V 8 C iss 400 C (pF) VGS , Gate to Source Voltage (V) 10 6 300 200 4 C oss C rss 100 2 0 0 0 2 4 6 8 10 1 12 5 9 13 17 21 25 29 V DS ,Drain-to-Source Voltage (V) Q G , Total Gate Charge (nC) Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics 1000 1 Normalized Thermal Response (Rthjc) Duty factor = 0.5 ID (A) 100 100us 10 1ms 10ms 100ms DC 1 T C =25 o C Single Pulse 0 0.2 0.1 0.1 0.05 PDM t T 0.02 Duty factor = t/T Peak Tj = PDM x R thjc + T c 0.01 Single Pulse 0.01 0.1 1 10 100 0.00001 0.0001 Fig 9. Maximum Safe Operating Area 0.001 0.01 0.1 1 t , Pulse Width (s) V DS ,Drain-to-Source Voltage (V) Fig 10. Effective Transient Thermal Impedance VG VDS 90% QG 4.5V QGS QGD 10% VGS td(on) tr td(off) tf Fig 11. Switching Time Waveform Charge Q Fig 12. Gate Charge Waveform 4