PART OBSOLETE NO ALTERNATE PART ZXGD3109N8 OBSOLETE - PART DISCONTINUED SYNCHRONOUS MOSFET CONTROLLER IN SO-8 Description Features The ZXGD3109N8 is intended to drive a MOSFET configured as an ideal diode replacement. The device is comprised of a high-voltage detector stage and gate driver. The detector monitors the voltage between the drain and the source of the MOSFET, and if this voltage is less than the turn-on threshold voltage of the controller, a positive voltage is applied to the MOSFET's Gate Pin. As the load current decays to zero, and the voltage between the drain and source of the MOSFET increases beyond the turn-off threshold value, the MOSFET is rapidly turned off. Intelligent features of this IC are the Minimum Off-Time (TOFF) and Minimum On-Time (TON). These features blanket the noise generated during the turn-on and turn-off instances of the power FET. Also Light Load Detection (LLD) for improved efficiency at light and no load, where synchronous rectification is no more beneficial. Other features include, Undervoltage Lockout (UVLO) and low turn-off threshold voltage for improved efficiency. Frequency of Operation Up to 500kHz Suitable for Discontinuous Conduction Mode (DCM) and Critical Conduction Mode (CrCM) Minimum On-Time and Off-Time to Reduce Turn-On/Off Oscillations Intelligent Light Load Detection and Sleep Mode Turn-Off Propagation Delay Time of 30ns Typically Drain Voltage Rating of 200V Recommended Operating Voltage from 4.5V up to 12V Source and Sink Current of 2A and 4A Respectively Low Component Count Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2) Halogen and Antimony free. "Green" Device (Note 3) For automotive applications requiring specific change control (i.e. parts qualified to AEC-Q100/101/200, PPAP capable, and manufactured in IATF 16949 certified facilities), please contact us or your local Diodes representative. https://www.diodes.com/quality/product-definitions/ Applications Mechanical Data Flyback Converters in: Power Adaptors Auxiliary Power Supplies PoE Power Devices Resonant Converters in: High Power Adaptors 85+/90+ Compliant ATX and Server Power Supplies Case: SO-8 Case Material: Molded Plastic. "Green" Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Finish - Matte Tin Plated Leads, Solderable per MIL-STD-202, Method 208 Weight: 0.074 grams (Approximate) TON VCC GND TOFF/EN SO-8 Top view VS GATE VD PGATE Top View Pin-Out Ordering Information (Note 4) Product ZXGD3109N8TC Notes: Marking ZXGD3109 Reel Size (inches) 13 Tape Width (mm) 12 Quantity per Reel 2,500 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated's definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green" products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at http://www.diodes.com/products/packages.html. ZXGD3109N8 Document Number DS37178 Rev. 2 - 4 1 of 13 www.diodes.com March 2020 (c) Diodes Incorporated ZXGD3109N8 OBSOLETE - PART DISCONTINUED Marking Information ZXGD 3109 YY WW ZXGD = Product Type Marking Code, Line 1 3109 = Product Type Marking Code, Line 2 YY = Year (ex: 15 = 2015) WW = Week (01 - 53) Functional Block Diagram ZXGD3109N8 Document Number DS37178 Rev. 2 - 4 2 of 13 www.diodes.com March 2020 (c) Diodes Incorporated ZXGD3109N8 OBSOLETE - PART DISCONTINUED Pin Descriptions Pin Number Pin Name 1 TON Function Minimum On-Time Minimum on-time setting pin. Connect this pin to Ground via RTON resistor. Minimum Off-Time/Enable Pin This pin combines the functions of setting the programmable minimum off-time as well as acting as the Enable Pin. The device enters Undervoltage Lockout (UVLO) mode when VCC falls below the UVLO threshold. At this point, the TOFF/EN Pin is internally shorted to Ground through a resistor. The internal current source (used for setting TOFF) is powered down. Once the UVLO threshold is exceeded, the internal resistor is removed and the current source is activated. If the voltage applied to the TOFF/EN Pin exceeds the VEN-ON threshold then the device is in Active Mode. If the voltage drops below the VEN-OFF threshold then the device is in Sleep Mode. 2 TOFF/EN 3 VS Source Voltage Connect this pin to the source of the synchronous MOSFET 4 VD Drain Voltage The pin needs to be connected as closely as possible to the transformer used in the application to minimize the effects of parasitic inductance on the performance of the device. The device requires that V D has a voltage greater than 1.5V, and that the TOFF timer has expired before the MOSFET is able to be activated. Once these conditions are met, and the voltage sensed on the VD Pin is 150mV lower than the VS Pin, the Gate output to the synchronous MOSFET will go high and the TON (minimum on-time) period is started. The MOSFET will remain on for at least the length of the minimum on-time. After the TON period, the MOSFET will remain on until the VD to VS voltage has reached the VTHOFF threshold, at which point the Gate output will go low. If the VTHOFF threshold is reached before the TON period has expired, the device will enter the Light Load Mode. Under this mode, the MOSFET will not be turned on the next switching cycle. The device will come out of light load once the on-time of the synchronous MOSFET exceeds the set minimum on-time. 5 PGATE Protection MOSFET Gate A 100nF capacitor should be connected between this pin and GND. 6 GATE Gate Connect GATE to the gate of the synchronous MOSFET through a small-series resistor using short PC board tracks to achieve optimal switching performance. The Gate output can source >2A peak source current while turning on the sync MOSFET, and can sink >4A peak current while turning on the sync MOSFET. 7 GND Ground This is the reference potential for all internal comparators and thresholds. A 10F decoupling capacitor is required to be placed as close as possible between VCC and GND Pins. VCC Power Supply Pin VCC supplies all the internal circuitry of the device. A DC supply is required to be connected to this pin. A 10F or larger capacitor must be connected between this pin and GND Pin as close as possible. The device will not function until the VCC has risen above the UVLO threshold. The device can safely be turned off by bringing VCC below the UVLO threshold (minus the UVLO threshold hysteresis). If V CC drops below the UVLO threshold (minus UVLO threshold hysteresis), the MOSFET is turned off and the TOFF/EN Pin is internally connected to GND. 8 ZXGD3109N8 Document Number DS37178 Rev. 2 - 4 3 of 13 www.diodes.com March 2020 (c) Diodes Incorporated ZXGD3109N8 OBSOLETE - PART DISCONTINUED Absolute Maximum Ratings (@TA = +25C, unless otherwise specified.) Characteristic Supply Voltage, Relative to GND Drain Pin Voltage Gate Output Voltage Minimum On-Time (TOFF) Pin Voltage Minimum Off-Time (TON) Pin Voltage Gate Driver Peak Source Current Gate Driver Peak Sink Current Input Voltage Range VS Symbol VCC VD VG VTOFF VTON ISOURCE ISINK Value -0.3 to 15 -1 to +200 12 -0.3 to 6 -0.3 to 6 5 5 Unit V V V V V A A VS -1 to 1 V Symbol Value 490 3.92 655 5.24 720 5.76 785 6.28 255 191 173 159 55 45 +150 -65 to +150 Unit Thermal Characteristics Characteristic (Note 5) Power Dissipation Linear Derating Factor (Note 6) PD (Note 7) (Note 8) Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Lead Thermal Resistance, Junction to Case Maximum Jundtion Temperature Storage Temperature Range (Note 5) (Note 6) (Note 7) (Note 8) (Note 9) (Note 10) RJA RJL RJC TJ TSTG mW mW/C C/W C/W C/W C ESD Ratings (Note 11) Characteristic Electrostatic Discharge - Human Body Model Electrostatic Discharge - Machine Model Notes: Symbol ESD HBM ESD MM Value 2,000 500 Unit V V JEDEC Class 1C C 5. For a device surface mounted on minimum recommended pad layout FR4 PCB with high coverage of single sided 1oz copper, in still air conditions; the device is measured when operating in a steady-state condition. 6. Same as Note (5), except Pin 8 (VCC) and Pin 7 (GND) are both connected to separate 5mm x 5mm 1oz copper heatsinks. 7. Same as Note (6), except both heatsinks are 10mm x 10mm. 8. Same as Note (6), except both heatsinks are 15mm x 15mm. 9. Thermal resistance from junction to solder-point at the end of each lead on Pin 8 (VCC) and Pin 7 (GND). 10. Thermal resistance from junction to top of the case. 11. Refer to JEDEC specification JESD22-A114 and JESD22-A115. ZXGD3109N8 Document Number DS37178 Rev. 2 - 4 4 of 13 www.diodes.com March 2020 (c) Diodes Incorporated ZXGD3109N8 Recommended Operating Conditions Symbol Parameter Min Max Unit VCC Supply Voltage Range 4.5 12 VDS Voltage Cross Drain and Source -1 200 FSW Switching Frequency 20 600 kHz Operating Junction Temperature Range -40 +125 C RTOFF TOFF Resistor Value 85 200 k RTON TON Resistor Value 8.25 100 k CVCC VCC Bypass Capacitor 10 -- F TJ Thermal Derating Curve Max Power Dissipation (W) OBSOLETE - PART DISCONTINUED V 0.8 15mm x 15mm 0.7 10mm x 10mm 0.6 0.5 5mm x 5mm 0.4 Minimum Layout 0.3 0.2 0.1 0.0 0 20 40 60 80 100 120 140 160 Junction Temperature ( (C) C) Derating Curve ZXGD3109N8 Document Number DS37178 Rev. 2 - 4 5 of 13 www.diodes.com March 2020 (c) Diodes Incorporated ZXGD3109N8 Electrical Characteristics (@TA = +25C, unless otherwise specified.) Symbol OBSOLETE - PART DISCONTINUED ICCSTART ICCSTANDBY Parameter Supply Current (Undervoltage) Conditions Min Typ Max VCC = 2.6V -- 160 220 VCC = 5.5V, REN/OFF = 0 -- 380 500 VCC = 12V, REN/OFF = 0 -- 450 600 -- 1.5 1.8 -- 1.8 2.3 Supply Current (Disabled) VCC = 5.5V, FSW = 100KHz CGATE = 0pF VCC = 12V, FSW = 100KHz CGATE = 0pF ICCON Supply Current (Enabled) Unit A mA VCC = 5.5V, FSW = 100KHz CGATE = 3,300pF VCC = 12V, FSW = 100KHz CGATE = 3,300pF TOFF/EN Driven, VTON > 0.6V -- 3.2 4 -- 5 7 1.31 1.4 1.49 0.55 0.6 0.65 VEN-ON TOFF/EN Turn-on Threshold, Rising VEN-OFF TOFF/EN Turn-off Threshold, Falling IEN-START TOFF/EN Input Current (Disabled) RTOFF = 50k -23 -20 -17 IEN-ON TOFF/EN Input Current (Enabled) RTOFF = 100k -11.5 -10 -8.5 TOFF/EN Driven, VTON > 0.2V V A Undervoltage Lockout (UVLO) UVLOTH VCC Undervoltage Lockout Threshold Rising -- 2.8 3.0 3.20 V UVLOHYS VCC Undervoltage Lockout Threshold Hysteresis -- -- 200 -- mV VD to GND, Rising -1.3 1.5 -1.7 V (VD-VS) Falling, VS = 0V -220 -150 -80 mV -30 -20 -10 mV -10 -4 -1 mV MOSFET Voltage Sensing VTHARM Gate Re-Arming Threshold VTHON Gate Turn-On Threshold VTHOFFLV Gate Turn-Off Threshold VTHOFFHV Gate Turn-Off Threshold (VD-VS) Rising, VS = 0V, VCC < 4.3V (VD-VS) Rising, VS = 0V, VCC > 4.3V TD(ON) Gate Turn-On Propagation Delay From VTHON to Gate > 1V -- 30 52 ns TD(OFF) Gate Turn-Off Propagation Delay From VTHOFF to Gate < 4V -- 30 62 ns Minimum On-Time TON-LR Minimum On-Time Low Resistance RTON = 8.25k 0.26 0.34 0.42 s TON-HR Minimum On-Time High Resistance RTON = 100k 2.2 3 3.8 s ZXGD3109N8 Document Number DS37178 Rev. 2 - 4 6 of 13 www.diodes.com March 2020 (c) Diodes Incorporated ZXGD3109N8 Electrical Characteristics (Continued) (@TA = +25C, unless otherwise specified.) OBSOLETE - PART DISCONTINUED Minimum Off-Time TOFF-LR Minimum Off-Time Low Resistance RTOFF = 100k 1.2 3 5 s TOFF-HR Minimum Off-Time High Resistance RTOFF = 200k 15 21 25 s TOFF-LV Minimum Off-Time Low Voltage VEN/TOFF = 1V -- 3 -- s TOFF-HV Minimum Off-Time High Voltage VEN/TOFF = 2V -- 21 -- s TOFF-OV Minimum Off-Time Over Voltage 2V < VEN/TOFF < VAVDD -- 21 -- s RGUP Gate Pull-Up Resistance Enabled IGATE = -100mA -- 2.3 -- RGDN Gate Pull-Down Resistance Enabled IGATE = 100mA -- 1.1 -- Peak Gate Source Current CGATE = 22nF -- 3 -- ISINK Peak Gate Sink Current CGATE = 22nF -- 4 -- VCC = 5V 4.7 -- -- VOHG Gate Output High Voltage VCC = 12V 9 -- -- VCC = 5V -- -- 0.3 4V to 1V, CGATE = 3,300pF, VCC = 5V -- 14 42 9V to 1V, CGATE = 3,300pF, VCC = 12V -- 20 42 1V to 4V, CGATE = 3,300pF, VCC = 5V -- 16 42 1V to 10V, CGATE = 3,300pF, VCC = 12V -- 20 42 EN Falling to Gate Falling -- 160 -- Overtemperature -- -- +150 -- C Temperature to Recover from Overtemperature Exception -- -- +125 -- C Gate Driver ISOURCE VOLG TFGATE TRGATE TDIS Gate Output Low Voltage A V Gate Fall Time ns Gate Rise Time Disable Delay (Note 8) Exception Handling TOVER TRECOVER ZXGD3109N8 Document Number DS37178 Rev. 2 - 4 7 of 13 www.diodes.com March 2020 (c) Diodes Incorporated ZXGD3109N8 Typical Application Circuit Less than 12V rails can be directly connected to the Vcc. For more than 12V operation, a regulator arrangement is suggested in the figure. OBSOLETE - PART DISCONTINUED +Vout IN ZXTR2012 OUT GND C3 Transformer Vcc C1 C2 GND ZXGD3109 Drain Source Gate PGATE RTON RTOFF/EN Snubber RTON RTOFF CPGATE G D S - Vout Synchronous MOSFET PWM controller CrCM/DCM C3 of 1F must be connected CPGATE of 0.1F must be connected C1 of >10F must be connected as close as possible to Vcc and ground with minimum track length ZXGD3109N8 Document Number DS37178 Rev. 2 - 4 8 of 13 www.diodes.com March 2020 (c) Diodes Incorporated ZXGD3109N8 OBSOLETE - PART DISCONTINUED Typical Performance Characteristics Figure 1 Figure 2 Figure 3 Figure 4 Figure 5 Figure 6 ZXGD3109N8 Document Number DS37178 Rev. 2 - 4 9 of 13 www.diodes.com March 2020 (c) Diodes Incorporated ZXGD3109N8 OBSOLETE - PART DISCONTINUED Typical Performance Characteristics (Continued) Figure 7 Figure 8 Figure 9 Figure 10 Figure 11 Figure 12 ZXGD3109N8 Document Number DS37178 Rev. 2 - 4 10 of 13 www.diodes.com March 2020 (c) Diodes Incorporated ZXGD3109N8 OBSOLETE - PART DISCONTINUED Typical Performance Characteristics (Cont.) Figure 13 ZXGD3109N8 Document Number DS37178 Rev. 2 - 4 Figure 14 11 of 13 www.diodes.com March 2020 (c) Diodes Incorporated ZXGD3109N8 Package Outline Dimensions Please see http://www.diodes.com/package-outlines.html for the latest version. E 1 b ides All s 9 ( E1 h ) 7 R 0 e c 4 3 A .1 Q 45 OBSOLETE - PART DISCONTINUED SO-8 A1 L E0 Gauge Plane Seating Plane SO-8 Dim Min Max Typ A 1.40 1.50 1.45 A1 0.10 0.20 0.15 b 0.30 0.50 0.40 c 0.15 0.25 0.20 D 4.85 4.95 4.90 E 5.90 6.10 6.00 E1 3.80 3.90 3.85 E0 3.85 3.95 3.90 e --1.27 h -0.35 L 0.62 0.82 0.72 Q 0.60 0.70 0.65 All Dimensions in mm D Suggested Pad Layout Please see http://www.diodes.com/package-outlines.html for the latest version. SO-8 X1 Dimensions Value (in mm) C 1.27 X 0.802 X1 4.612 Y 1.505 Y1 6.50 Y1 Y C ZXGD3109N8 Document Number DS37178 Rev. 2 - 4 X 12 of 13 www.diodes.com March 2020 (c) Diodes Incorporated ZXGD3109N8 IMPORTANT NOTICE OBSOLETE - PART DISCONTINUED DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages. Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks. This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the final and determinative format released by Diodes Incorporated. LIFE SUPPORT Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: A. Life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. Copyright (c) 2020, Diodes Incorporated www.diodes.com ZXGD3109N8 Document Number DS37178 Rev. 2 - 4 13 of 13 www.diodes.com March 2020 (c) Diodes Incorporated