Central TM Semiconductor Corp. 2N5333 PNP SILICON POWER TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N5333 is a PNP Silicon Power Transistor manufactured by the epitaxial planar process, mounted in a hermetically sealed metal case, designed for amplifier and switching applications. MARKING: FULL PART NUMBER TO-39 CASE MAXIMUM RATINGS: (TC=25C) Collector-Base Voltage SYMBOL VCBO 100 UNITS V Collector-Emitter Voltage VCEO 80 V Emitter-Base Voltage VEBO 6.0 V IC ICM 2.0 A 5.0 A IB 1.0 A PD 1.0 W TJ, Tstg -65 to +200 C JA 175 C/W Continuous Collector Current Peak Collector Current (tp < 0.3ms) Continuous Base Current Power Dissipation (TA=25C) Operating and Storage Junction Temperature Thermal Resistance ELECTRICAL CHARACTERISTICS: (TA=25C unless otherwise noted) SYMBOL TEST CONDITIONS MIN TYP ICES VCE=90V ICES ICEO IEBO IEBO BVCEO VCE(SAT) VCE(SAT) VBE(ON) hFE hFE hfe fT ton toff VCE=50V (TC=150C) VCE=40V VEB=4.0V VEB=6.0V IC=30mA IC=1.0A, IB=100mA IC=1.0A IC=2.0A 500 A 50 A 1.0 A 100 A 0.45 V 1.0 V 1.5 V V 30 120 10 VCE=10V, IC=1.0A, f=1KHz VCE=10V, IC=1.0A IC=1.0A, IB1=IB2=100mA { UNITS A 80 IC=2.0A, IB=400mA VCE=4.0V, IC=2.0A VCE=4.0V, VCE=4.0V, MAX 10 } VBE(OFF)=3.7V, RL=20 30 30 MHz 150 ns 450 ns R0 (25-September 2008) Central TM 2N5333 Semiconductor Corp. NPN SILICON POWER TRANSISTOR TO-39 CASE - MECHANICAL OUTLINE LEAD CODE: 1) EMITTER 2) BASE 3) COLLECTOR (case) MARKING: FULL PART NUMBER R0 (25-September 2008)