APTM20SKM04G Buck chopper MOSFET Power Module VDSS = 200V RDSon = 4m typ @ Tj = 25C ID = 372A @ Tc = 25C Application VBUS Q1 AC and DC motor control Switched Mode Power Supplies G1 Features OUT S1 CR2 0/VBUS Power MOS 7(R) MOSFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Avalanche energy rated - Very rugged Kelvin source for easy drive Very low stray inductance - Symmetrical design - M5 power connectors High level of integration Benefits Outstanding performance at high frequency operation Direct mounting to heatsink (isolated package) Low junction to case thermal resistance Low profile RoHS Compliant Absolute maximum ratings ID IDM VGS RDSon PD IAR EAR EAS Parameter Drain - Source Breakdown Voltage Tc = 25C Tc = 80C Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Maximum Power Dissipation Avalanche current (repetitive and non repetitive) Repetitive Avalanche Energy Single Pulse Avalanche Energy Tc = 25C Max ratings 200 372 278 1488 30 5 1250 100 50 3000 Unit V A V m W A mJ These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on www.microsemi.com www.microsemi.com 1-7 APTM20SKM04G - Rev 3 October, 2012 Symbol VDSS APTM20SKM04G All ratings @ Tj = 25C unless otherwise specified Electrical Characteristics Symbol Characteristic IDSS RDS(on) VGS(th) IGSS Zero Gate Voltage Drain Current Drain - Source on Resistance Gate Threshold Voltage Gate - Source Leakage Current Test Conditions Min VGS = 0V,VDS = 200V Tj = 25C VGS = 0V,VDS = 160V Tj = 125C VGS = 10V, ID = 186A VGS = VDS, ID = 10mA VGS = 30 V, VDS = 0V Typ 4 3 Max 500 2000 5 5 200 Unit Max Unit A m V nA Dynamic Characteristics Symbol Ciss Coss Crss Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Test Conditions VGS = 0V VDS = 25V f = 1MHz Qg Total gate Charge Qgs Gate - Source Charge Qgd Gate - Drain Charge VGS = 10V VBus = 100V ID = 372A Td(on) Turn-on Delay Time Tr Td(off) Rise Time Turn-off Delay Time Tf Fall Time Eon Turn-on Switching Energy Eoff Turn-off Switching Energy Eon Turn-on Switching Energy Eoff Turn-off Switching Energy Min Typ 28.9 9.32 0.58 nF 560 nC 212 268 32 Inductive switching @ 125C VGS = 15V VBus = 133V ID = 372A RG = 1.2 64 ns 88 116 Inductive switching @ 25C VGS = 15V, VBus = 133V ID = 372A, RG = 1.2 3396 Inductive switching @ 125C VGS = 15V, VBus = 133V ID = 372A, RG = 1.2 3744 J 3716 J 3944 Chopper diode ratings and characteristics VRRM IRM IF VF Test Conditions Min VR=200V DC Forward Current Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge Max 200 Maximum Peak Repetitive Reverse Voltage Maximum Reverse Leakage Current Typ IF = 300A IF = 600A IF = 300A IF = 300A VR = 133V di/dt = 600A/s www.microsemi.com Tj = 25C Tj = 125C Tc = 80C Unit V 250 750 Tj = 125C 300 1 1.4 0.9 Tj = 25C 60 Tj = 125C 110 Tj = 25C 600 Tj = 125C 2520 A A 1.1 V ns nC 2-7 APTM20SKM04G - Rev 3 October, 2012 Symbol Characteristic APTM20SKM04G Thermal and package characteristics Symbol Characteristic Min Transistor Diode RthJC Junction to Case Thermal Resistance VISOL TJ TSTG TC RMS Isolation Voltage, any terminal to case t =1 min, 50/60Hz Operating junction temperature range Storage Temperature Range Operating Case Temperature Torque Mounting torque Wt Package Weight To heatsink For terminals M6 M5 4000 -40 -40 -40 3 2 Typ Max 0.1 0.2 Unit C/W V 150 125 100 5 3.5 300 C N.m g SP6 Package outline (dimensions in mm) www.microsemi.com 3-7 APTM20SKM04G - Rev 3 October, 2012 See application note APT0601 - Mounting Instructions for SP6 Power Modules on www.microsemi.com APTM20SKM04G Typical Performance Curve Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration Thermal Impedance (C/W) 0.12 0.1 0.9 0.08 0.7 0.06 0.5 0.04 0.3 0.02 0.1 Single Pulse 0.05 0 0.00001 0.0001 0.001 0.01 0.1 1 10 rectangular Pulse Duration (Seconds) Transfert Characteristics 1200 VGS=15V 2500 10V 2000 9V 1500 8.5V 8V 1000 7.5V 7V 500 ID, Drain Current (A) VDS > ID(on)xRDS(on)MAX 250s pulse test @ < 0.5 duty cycle 1000 800 600 400 TJ=25C 200 TJ=125C 6.5V 0 0 4 8 12 16 20 24 28 0 VDS, Drain to Source Voltage (V) Normalized to VGS=10V @ 186A 1.1 1 2 3 4 5 6 7 8 9 10 VGS, Gate to Source Voltage (V) DC Drain Current vs Case Temperature 400 RDS(on) vs Drain Current 1.2 ID, DC Drain Current (A) RDS(on) Drain to Source ON Resistance TJ=-55C 0 VGS=10V 1 VGS=20V 0.9 350 300 250 200 150 100 0.8 50 0 0 100 200 300 400 500 600 ID, Drain Current (A) 25 50 75 100 125 150 TC, Case Temperature (C) www.microsemi.com 4-7 APTM20SKM04G - Rev 3 October, 2012 ID, Drain Current (A) Low Voltage Output Characteristics 3000 APTM20SKM04G 1.10 1.05 1.00 0.95 0.90 -50 -25 0 25 50 75 100 125 150 TJ, Junction Temperature (C) Threshold Voltage vs Temperature 1.2 2.5 VGS=10V ID= 186A 2.0 1.5 1.0 0.5 0.0 -50 -25 1.1 1.0 0.9 0.8 0.7 25 50 75 100 125 150 Maximum Safe Operating Area 1000 limited by RDSon 100s 100 0.6 1ms Single pulse TJ=150C TC=25C 10 10ms 100ms 1 0 25 50 75 100 125 150 1 Capacitance vs Drain to Source Voltage 100000 Ciss Coss 10000 1000 Crss 100 0 VGS, Gate to Source Voltage (V) TC, Case Temperature (C) 10 20 30 40 50 VDS, Drain to Source Voltage (V) www.microsemi.com 10 100 1000 VDS, Drain to Source Voltage (V) Gate Charge vs Gate to Source Voltage 14 ID=372A VDS=40V 12 TJ=25C VDS=100V 10 8 VDS=160V 6 4 2 0 0 80 160 240 320 400 480 560 640 Gate Charge (nC) 5-7 APTM20SKM04G - Rev 3 October, 2012 -50 -25 C, Capacitance (pF) 0 TJ, Junction Temperature (C) 10000 ID, Drain Current (A) VGS(TH), Threshold Voltage (Normalized) ON resistance vs Temperature RDS(on), Drain to Source ON resistance (Normalized) BVDSS, Drain to Source Breakdown Voltage (Normalized) Breakdown Voltage vs Temperature 1.15 APTM20SKM04G Delay Times vs Current Rise and Fall times vs Current 160 120 VDS=133V RG=1.2 TJ=125C L=100H 60 40 tr and tf (ns) td(on) 120 100 80 tr 60 40 20 0 0 0 100 200 300 400 500 ID, Drain Current (A) 600 0 12 VDS=133V RG=1.2 TJ=125C L=100H Eoff Switching Energy (mJ) 6 100 200 300 400 500 ID, Drain Current (A) 600 Switching Energy vs Gate Resistance Switching Energy vs Current 8 Eon and Eoff (mJ) tf Eon 4 2 Eoff VDS=133V ID=372A TJ=125C L=100H 10 Eoff 8 6 Eon 4 0 2 0 100 200 300 400 500 600 0 ID, Drain Current (A) Operating Frequency vs Drain Current 200 ZVS 150 ZCS 100 Hard switching 50 0 50 100 150 200 250 7.5 10 12.5 300 Source to Drain Diode Forward Voltage IDR, Reverse Drain Current (A) VDS=133V D=50% RG=1.2 TJ=125C TC=75C 250 5 Gate Resistance (Ohms) 350 300 2.5 1000 100 TJ=150C TJ=25C 10 350 ID, Drain Current (A) 1 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 VSD, Source to Drain Voltage (V) www.microsemi.com 6-7 APTM20SKM04G - Rev 3 October, 2012 td(on) and td(off) (ns) td(off) 80 20 Frequency (kHz) VDS=133V RG=1.2 TJ=125C L=100H 140 100 APTM20SKM04G DISCLAIMER The information contained in the document (unless it is publicly available on the Web without access restrictions) is PROPRIETARY AND CONFIDENTIAL information of Microsemi and cannot be copied, published, uploaded, posted, transmitted, distributed or disclosed or used without the express duly signed written consent of Microsemi. 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