Semiconductor Components Industries, LLC, 2005
May, 2005 − Rev. 1 1Publication Order Number:
NCS2500/D
NCS2500
1.1 mA 200 MHz Current
Feedback Op Amp
NCS2500 is a 1.1 mA 200 MHz current feedback monolithic
operational amplifier featuring high slew rate and low differential gain
and phase error. The current feedback architecture allows for a
superior bandwidth and low power consumption.
Features
•−3.0 dB Small Signal BW (AV = +2.0, VO = 0.5 Vp−p) 200 MHz Typ
•Slew Rate 450 V/s
•Supply Current 1.1 mA
•Input Referred Voltage Noise 4.0 nV/ Hz
•THD −55 dB (f = 5.0 MHz, VO = 2.0 Vp−p)
•Output Current 100 mA
•Pin Compatible with EL5161, LMH6723, MAX4452
•Pb−Free Packages are Available
Applications
•Portable Video
•Line Drivers
•Radar/Communication Receivers
•Set Top Box
•NTSC/PAL/HDTV
Figure 1. Frequency Response:
Gain (dB) vs. Frequency Av = +2.0, RL = 100
2
1
−1
−2
−3
−4
−6
0.01 1 100 1000
NORMAILIZED GAIN(dB)
FREQUENCY (MHz)
0
−5
3
VS = ±5V
VOUT = 0.7V
Gain = +2
RF = 1.2k
RL = 100
VS = ±5V
VOUT = 0.5V
VS = ±2.5V
VOUT = 2.0V
VS = ±5V
VOUT = 2.0V
VS = ±2.5V
VOUT = 0.7V VS = ±2.5V
VOUT = 0.5V
0.1 10
MARKING
DIAGRAMS
SO−8
D SUFFIX
CASE 751
YA0, N2500 = NCS2500
A = Assembly Location
L = Wafer Lot
Y = Year
W = Work Week
M= Date Code
= Pb−Free Package
1
8N2500
ALYW
1
8
SC−70−5
(SC−88A)
SQ SUFFIX
CASE 419A
YA0M
5
1
54
123
1
5
SOT23−5
(TSOP−5)
SN SUFFIX
CASE 483 1
5
YA0YW
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8
7
6
5
1
2
3
4
NC
−IN
+IN
VEE
NC
VCC
OUT
NC
(Top View)
SO−8 PINOUT
+
−
1
3−IN
OUT
2
VEE
+IN 4
VCC
5
(Top View)
SOT23−5/SC70−5 PINOUT
−
+
See detailed ordering and shipping information in the package
dimensions section on page 13 of this data sheet.
ORDERING INFORMATION
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2
PIN FUNCTION DESCRIPTION
Pin
(SO−8) Pin
(SOT23/SC70) Symbol Function Equivalent Circuit
6 1 OUT Output VCC
OUT
VEE
ESD
4 2 VEE Negative Power Supply
3 3 +IN Non−inverted Input VCC
−IN
VEE
+IN
ESDESD
2 4 −IN Inverted Input See Above
7 5 VCC Positive Power Supply
1, 5, 8 N/A NC No Connect
+IN
CC
OUT
VCC
VEE
Figure 2. Simplified Device Schematic
−IN
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3
ATTRIBUTES
Characteristics Value
ESD
Human Body Model
Machine Model
Charged Device Model
2.0 kV (Note 1)
200 V
1.0 kV
Moisture Sensitivity (Note 2) Level 1
Flammability Rating Oxygen Index: 28 to 34 UL 94 V−0 @ 0.125 in
1. 0.8 kV between the input pairs +IN and −IN pins only. All other pins are 2.0 kV.
2. For additional information, see Application Note AND8003/D.
MAXIMUM RATINGS
Parameter Symbol Rating Unit
Power Supply Voltage VS11 VDC
Input Voltage Range VIVSVDC
Input Differential Voltage Range VID VSVDC
Output Current IO100 mA
Maximum Junction Temperature (Note 3) TJ150 °C
Operating Ambient Temperature TA−40 to +85 °C
Storage Temperature Range Tstg −60 to +150 °C
Power Dissipation PD(See Graph) mW
Thermal Resistance, Junction−to−Air
SO−8
SC70−5
SOT23−5
RJA 172
215
154
°C/W
Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit
values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied,
damage may occur and reliability may be affected.
3. Power dissipation must be considered to ensure maximum junction temperature (TJ) is not exceeded.
MAXIMUM POWER DISSIPATION
The maximum power that can be safely dissipated is limited
by the associated rise in junction temperature. For the plastic
packages, the maximum safe junction temperature is 150°C.
If the maximum is exceeded momentarily, proper circuit
operation will be restored as soon as the die temperature is
reduced. Leaving the device in the “overheated’’ condition for
an extended period can result in device damage.
Figure 3. Power Dissipation vs. Temperature
1400
1000
800
600
400
0
−50 25 100 150
Maximum Power Dissapation (mW)
Ambient Temperature (°C)
1200
200
−25 0 75 12550
SC70 Pkg
SO−8 Pkg
SOT23 Pkg
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AC ELECTRICAL CHARACTERISTICS (VCC = +5.0 V, VEE = −5.0 V, TA = −40°C to +85°C, RL = 100 to GND, RF = 1.2 k,
AV = +2.0, VIN = 0 V, unless otherwise specified).
Symbol Characteristic Conditions Min Typ Max Unit
FREQUENCY DOMAIN PERFORMANCE
BW Bandwidth
3.0 dB Small Signal
3.0 dB Large Signal AV = +2.0, VO = 0.5 Vp−p
AV = +2.0, VO = 2.0 Vp−p 200
140
MHz
GF0.1dB 0.1 dB Gain Flatness
Bandwidth AV = +2.0 30 MHz
dG Differential Gain AV = +2.0, RL = 150 , f = 3.58 MHz 0.02 %
dP Differential Phase AV = +2.0, RL = 150 , f = 3.58 MHz 0.1 °
TIME DOMAIN RESPONSE
SR Slew Rate AV = +2.0, Vstep = 2.0 V 450 V/s
tsSettling Time
0.01%
0.1% AV = +2.0, Vstep = 2.0 V
AV = +2.0, Vstep = 2.0 V 35
18
ns
tr tfRise and Fall Time (10%−90%) AV = +2.0, Vstep = 2.0 V 5.0 ns
HARMONIC/NOISE PERFORMANCE
THD Total Harmonic Distortion f = 5.0 MHz, VO = 2.0 Vp−p, RL = 150 −55 dB
HD2 2nd Harmonic Distortion f = 5.0 MHz, VO = 2.0 Vp−p −67 dBc
HD3 3rd Harmonic Distortion f = 5.0 MHz, VO = 2.0 Vp−p −57 dBc
IP3 Third−Order Intercept f = 10 MHz, VO = 2.0 Vp−p 35 dBm
SFDR Spurious−Free Dynamic
Range f = 5.0 MHz, VO = 2.0 Vp−p 58 dBc
eNInput Referred Voltage Noise f = 1.0 MHz 4.0 nVHz
iNInput Referred Current Noise f = 1.0 MHz, Inverting
f = 1.0 MHz, Non−Inverting 15
15 pAHz
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DC ELECTRICAL CHARACTERISTICS (VCC = +5.0 V, VEE = −5.0 V, TA = −40°C to +85°C, RL = 100 to GND, RF = 1.2 k,
AV = +2.0, VIN = 0 V, unless otherwise specified).
Symbol Characteristic Conditions Min Typ Max Unit
DC PERFORMANCE
VOS Offset Voltage −4.0 0.7 +4.0 mV
VIO/TInput Offset Voltage
Temperature Coefficient 6.0 V/°C
IIB Input Bias Current +Input (Non−Inverting), VO = 0 V
−Input (Inverting), VO = 0 V (Note 4) −4.0
−4.0 2.0
0.4 +4.0
+4.0 A
IIB/TInput Bias Current Temperature
Coefficient +Input (Non−Inverting), VO = 0 V
−Input (Inverting), VO = 0 V 40
10 nA/°C
INPUT CHARACTERISTICS
VCM Input Common Mode Voltage
Range (Note 4) 3.0 4.0 V
CMRR Common Mode Rejection Ratio (See Graph) 50 55 65 dB
RIN Input Resistance +Input (Non−Inverting)
−Input (Inverting) 4.0
350 M
CIN Differential Input Capacitance 1.0 pF
OUTPUT CHARACTERISTICS
ROUT Output Resistance 0.02
VOOutput Voltage Swing 3.0 3.5 V
IOOutput Current 60 100 mA
POWER SUPPLY
VSOperating Voltage Supply 10 V
ISPower Supply Current VO = 0 V 0.5 1.1 2.0 mA
PSRR Power Supply Rejection Ratio (See Graph) 50 60 70 dB
4. Guaranteed by design and/or characterization.
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AC ELECTRICAL CHARACTERISTICS (VCC = +2.5 V, VEE = −2.5 V, TA = −40°C to +85°C, RL = 100 to GND, RF = 1.2 k,
AV = +2.0, VIN = 0 V, unless otherwise specified).
Symbol Characteristic Conditions Min Typ Max Unit
FREQUENCY DOMAIN PERFORMANCE
BW Bandwidth
3.0 dB Small Signal
3.0 dB Large Signal AV = +2.0, VO = 0.5 Vp−p
AV = +2.0, VO = 1.0 Vp−p 180
130
MHz
GF0.1dB 0.1 dB Gain Flatness
Bandwidth AV = +2.0 15 MHz
dG Differential Gain AV = +2.0, RL = 150 , f = 3.58 MHz 0.02 %
dP Differential Phase AV = +2.0, RL = 150 , f = 3.58 MHz 0.1 °
TIME DOMAIN RESPONSE
SR Slew Rate AV = +2.0, Vstep = 1.0 V 350 V/s
tsSettling Time
0.01%
0.1% AV = +2.0, Vstep = 1.0 V
AV = +2.0, Vstep = 1.0 V 40
18
ns
tr tfRise and Fall Time (10%−90%) AV = +2.0, Vstep = 1.0 V 8.0 ns
HARMONIC/NOISE PERFORMANCE
THD Total Harmonic Distortion f = 5.0 MHz, VO = 1.0 Vp−p, RL = 150 −55 dB
HD2 2nd Harmonic Distortion f = 5.0 MHz, VO = 1.0 Vp−p −67 dBc
HD3 3rd Harmonic Distortion f = 5.0 MHz, VO = 1.0 Vp−p −57 dBc
IP3 Third−Order Intercept f = 10 MHz, VO = 1.0 Vp−p 35 dBm
SFDR Spurious−Free Dynamic
Range f = 5.0 MHz, VO = 1.0 Vp−p 58 dBc
eNInput Referred Voltage Noise f = 1.0 MHz 4.0 nVHz
iNInput Referred Current Noise f = 1.0 MHz, Inverting
f = 1.0 MHz, Non−Inverting 15
15 pAHz
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DC ELECTRICAL CHARACTERISTICS (VCC = +2.5 V, VEE = −2.5 V, TA = −40°C to +85°C, RL = 100 to GND, RF = 1.2 k,
AV = +2.0, VIN = 0 V, unless otherwise specified).
Symbol Characteristic Conditions Min Typ Max Unit
DC PERFORMANCE
VOS Offset Voltage −4.0 0.5 +4.0 mV
VIO/TInput Offset Voltage
Temperature Coefficient 6.0 V/°C
IIB Input Bias Current +Input (Non−Inverting), VO = 0 V
−Input (Inverting), VO = 0 V (Note 5) −4.0
−4.0 2.0
0.4 +4.0
+4.0 A
IIB/TInput Bias Current Temperature
Coefficient +Input (Non−Inverting), VO = 0 V
−Input (Inverting), VO = 0 V 40
10 nA/°C
INPUT CHARACTERISTICS
VCM Input Common Mode Voltage
Range (Note 5) 1.3 1.5 V
CMRR Common Mode Rejection Ratio (See Graph) 50 55 65 dB
RIN Input Resistance +Input (Non−Inverting)
−Input (Inverting) 4.0
350 M
CIN Differential Input Capacitance 1.0 pF
OUTPUT CHARACTERISTICS
ROUT Output Resistance 0.02
VOOutput Voltage Swing 1.1 1.4 V
IOOutput Current 40 80 mA
POWER SUPPLY
VSOperating Voltage Supply 5.0 V
ISPower Supply Current VO = 0 V 0.5 0.9 1.9 mA
PSRR Power Supply Rejection Ratio (See Graph) 50 60 70 dB
5. Guaranteed by design and/or characterization.
+
−
VIN
RL
RF
RF
VOUT
Figure 4. Typical Test Setup
(AV = +2.0, RF = 1.8 k or 1.2 k or 1.0 k, RL = 100 )
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Figure 5. Frequency Response:
Gain (dB) vs. Frequency
Av = +2.0
Figure 6. Frequency Response:
Gain (dB) vs. Frequency
Av = +1.0
Figure 7. Large Signal Frequency Response
Gain (dB) vs. Frequency Figure 8. Small Signal Frequency Response
Gain (dB) vs. Frequency
Figure 9. Small Signal Step Response
Vertical: 500 mV/div
Horizontal: 10 ns/div
Figure 10. Large Signal Step Response
Vertical: 500 mV/div
Horizontal: 10 ns/div
2
1
−1
−2
−3
−4
−6
0.01 1 10 1000
NORMAILIZED GAIN(dB)
FREQUENCY (MHz)
0
−5
3
VS = ±5V
VOUT = 0.5V
Gain = +2
RF = 1.2k
RL = 100
VS = ±2.5V
VOUT = 0.5V
VS = ±2.5V
VOUT = 2.0V
VS = ±5V
VOUT = 2.0V
VS = ±2.5V
VOUT = 0.7V
VS = ±2.5V
VOUT = 0.7V
6
3
−3
−6
−120.01 10 1000
NORMALIZED GAIN (dB)
FREQUENCY (MHz)
0
−9 VS = ±2.5V
VOUT = 1.0V
Gain = +1
RF = 1.2k
RL = 100
VS = ±5V
VOUT = 1.0V
VS = ±2.5V
VOUT = 0.7V
VS = ±5V
VOUT = 0.7V
VS = ±2.5V
VOUT = 0.5V
VS = ±5V
VOUT = 0.5V
6
3
−3
−6
−12
NORMALIZED GAIN (dB)
FREQUENCY (MHz)
0
−9 VOUT = 2.0V
RL = 100
VS = ±2.5V
AV = +2
VS = ±5V
AV = +2
VS = ±5V
AV = +4 3
−3
−6
−12
NORMAILIZED GAIN(dB)
FREQUENCY (MHz)
0
−9
6
VS = ±2.5V
AV = +4
VS = ±2.5V
AV = +1
VS = ±2.5V
AV = +4
VS = ±5V
AV = +4
VS = ±5V
AV = +1
VS = ±5V
AV = +2
VOUT = 0.5V
RL = 100
0.1 100 0.10 1 100
0.01 10 10000.10 1 100 0.01 10 10000.10 1 100
VS = ±2.5V
AV = +4
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Figure 11. THD, HD2, HD3 vs. Frequency Figure 12. THD, HD2, HD3 vs. Output Voltage
Figure 13. Input Referred Noise vs. Frequency Figure 14. CMRR vs. Frequency
Figure 15. PSRR vs. Frequency Figure 16. Differential Gain
7
5
4
3
2
01 10 100 1000
VOLTAGE NOISE (nV/Hz)
FREQUENCY (kHz)
6
1
±5.0V
±2.5V
0
−10
−30
−40
−50
−60
0.01 0.1 10 100
PSRR(dB)
FREQUENCY (MHz)
−20
−70 1
+5.0V
−5.0V
−2.5V
+2.5
0.06
0.04
0.02
0
−0.02
−0.06
−0.8 −0.2 0.4 0.8
DIFFERENTIAL GAIN (%)
OFFSET VOLTAGE (V)
−0.04
−0.6 −0.4 0 0.6
3.58MHz
0.2
10MHz
4.43MHz
VS = ±5V
RL = 150
20MHz
−40
−45
−65
−70
−8010 100 1000
DISTORTION (dB)
FREQUENCY (MHz)
−60
−75
−55
−50
VS = ±5V
VOUT = 2VPP
RL = 150
HD3
HD2
THD
−40
−60
−65
−70 0.5 3
DISTORTION (dB)
VOUT (VPP)
−50
1 2.5 3.52
−55
−45
1.5 4
VS = ±5V
f = 5MHz
RL = 150
THD
HD2
HD3
−20
−25
−45
−50
−55
−60
10k 100k 10M 100M
CMRR (dB)
FREQUENCY (Hz)
−40
−65 1M
−35
−30
VS = ±5V
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Figure 17. Differential Phase Figure 18. Supply Current vs. Power Supply
Figure 19. Output Voltage Swing vs. Supply Voltage Figure 20. Output Voltage Swing vs. Load
Resistance
1.4
1.3
1.1
1
0.9
0.8
0.647911
CURRENT (mA)
POWER SUPPLY VOLTAGE (V)
1.2
0.7
56 8 10
85°C
25°C
−40°C
Figure 21. Output Impedance vs. Frequency
18
12
0
−6
−12
−18
−301 10 100 1000
GAIN (dB)
FREQUENCY (MHz)
6
−24
100pF
47pF
10pF
7
6
4
3
2
1
1 10 1000 10k
OUTPUT VOLTAGE (VPP)
LOAD RESISTANCE ()
5
0100
VS = ±2.5V
9
8
AV = +2
f = 1MHz
VS = ±5V
Figure 22. Frequency Response vs. CL
0.06
0.04
0.02
0
−0.02
−0.06
−0.8 −0.2 0.4 0.8
DIFFERENTIAL PHASE (°)
OFFSET VOLTAGE (V)
−0.04
−0.6 −0.4 0 0.6
0.2
8
7
5
4
3
247911
OUTPUT VOLTAGE (VPP)
SUPPLY VOLTAGE (V)
6
56 8 10
85°C
25°C
−40°C
4.43MHz
10MHz
20MHz
3.58MHz
VS = ±5V
RL = 150
100
1
0.1
0.01
0.01 1 100
OUTPUT RESISTANCE ()
FREQUENCY (MHz)
10
0.1 10
VS = ±5V
VS = ±5V
RF = 1.2k
RL = 100
Gain= +2
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Figure 23. Transimpedance (ROL) vs. Frequency
10M
100k
10k
1k
100
1
0.01 10 10k
TRANSIMPEDANCE ()
FREQUENCY (MHz)
1M
10
0.1 1 100 1000
VS = ±5V
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General Design Considerations
The current feedback amplifier is optimized for use in high
performance video and data acquisition systems. For current
feedback architecture, its closed−loop bandwidth depends on
the value of the feedback resistor. The closed−loop bandwidth
is not a strong function of gain, as is for a voltage feedback
amplifier, as shown in Figure 24.
Figure 24. Frequency Response vs. RF
−20
−15
−10
−5
0
5
10
0.01 0.1 1.0 10 100 1000 10000
FREQUENCY (MHz)
GAIN (dB)
RF = 1.8 k
RF = 1.2 k
RF = 1 k
AV = +2
VCC = +5 V
VEE = −5 V
The −3.0 dB bandwidth is, to some extent, dependent on the
power supply voltages. By using lower power supplies, the
bandwidth is reduced, because the internal capacitance
increases. Smaller values of feedback resistor can be used at
lower supply voltages, to compensate for this affect.
Feedback and Gain Resistor Selection for Optimum
Frequency Response
A current feedback operational amplifier ’s key advantage
is the ability to maintain optimum frequency response
independent of gain by using appropriate values for the
feedback resistor. To obtain a very flat gain response, the
feedback resistor tolerance should be considered as well.
Resistor tolerance of 1% should be used for optimum flatness.
Normally, lowering RF resistor from its recommended value
will peak the frequency response and extend the bandwidth
while increasing the value of RF resistor will cause the
frequency response to roll off faster. Reducing the value of RF
resistor too far below its recommended value will cause
overshoot, ringing, and eventually oscillation.
Since each application is slightly different, it is worth some
experimentation to find the optimal RF for a given circuit. A
value of the feedback resistor that produces 0.1 dB of
peaking is the best compromise between stability and
maximal bandwidth. It is not recommended to use a current
feedback amplifier with the output shorted directly to the
inverting input.
Printed Circuit Board Layout Techniques
Proper high speed PCB design rules should be used for all
wideband amplifiers as the PCB parasitics can affect the
overall performance. Most important are stray capacitances at
the output and inverting input nodes as it can effect peaking
and bandwidth. A space (3/16″ is plenty) should be left around
the signal lines to minimize coupling. Also, signal lines
connecting the feedback and gain resistors should be short
enough so that their associated inductance does not cause high
frequency gain errors. Line lengths less than 1/4″ are
recommended.
Video Performance
This device designed to provide good performance with
NTSC, PAL, and HDTV video signals. Best performance is
obtained with back terminated loads as performance is
degraded as the load is increased. The back termination
reduces reflections from the transmission line and effectively
masks transmission line and other parasitic capacitances from
the amplifier output stage.
ESD Protection
This device is protected against electrostatic discharge
(ESD) on all pins as specified in the attributes table. Note:
Human Body Model for +IN and −IN pins are rated at 0.8 kV
while all other pins are rated at 2.0 kV. Under closed−loop
operation, the ESD diodes have no effect on circuit
performance. However, under certain conditions the ESD
diodes will be evident. If the device is driven into a slewing
condition, the ESD diodes will clamp large differential
voltages until the feedback loop restores closed−loop
operation. Also, if the device is powered down and a large
input signal is applied, the ESD diodes will conduct.
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ORDERING INFORMATION
Device Package Shipping†
NCS2500SQT2 SC70−5 (SC88A) 3000 Tape & Reel
NCS2500SQT2G SC70−5 (SC88A)
(Pb−Free) 3000 Tape & Reel
NCS2500SNT1 SOT23−5 (TSOP−5) 3000 Tape & Reel
NCS2500SNT1G SOT23−5 (TSOP−5)
(Pb−Free) 3000 Tape & Reel
NCS2500D* SO−8 98 Units/Rail
NCS2500DR2* SO−8 2500 Tape & Reel
NCS2500DG* SO−8
(Pb−Free) 98 Units/Rail
NCS2500DR2G* SO−8
(Pb−Free) 2500 Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
*Contact ON Semiconductor for ordering information.
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PACKAGE DIMENSIONS
SO−8
D SUFFIX
CASE 751−07
ISSUE AF
SEATING
PLANE
1
4
58
N
J
X 45
K
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION A AND B DO NOT INCLUDE
MOLD PROTRUSION.
4. MAXIMUM MOLD PROTRUSION 0.15 (0.006)
PER SIDE.
5. DIMENSION D DOES NOT INCLUDE DAMBAR
PROTRUSION. ALLOWABLE DAMBAR
PROTRUSION SHALL BE 0.127 (0.005) TOTAL
IN EXCESS OF THE D DIMENSION AT
MAXIMUM MATERIAL CONDITION.
6. 751−01 THRU 751−06 ARE OBSOLETE. NEW
STANDARD IS 751−07.
A
BS
D
H
C
0.10 (0.004)
DIM
AMIN MAX MIN MAX
INCHES
4.80 5.00 0.189 0.197
MILLIMETERS
B3.80 4.00 0.150 0.157
C1.35 1.75 0.053 0.069
D0.33 0.51 0.013 0.020
G1.27 BSC 0.050 BSC
H0.10 0.25 0.004 0.010
J0.19 0.25 0.007 0.010
K0.40 1.27 0.016 0.050
M0 8 0 8
N0.25 0.50 0.010 0.020
S5.80 6.20 0.228 0.244
−X−
−Y−
G
M
Y
M
0.25 (0.010)
−Z−
Y
M
0.25 (0.010) Z SXS
M
1.52
0.060
7.0
0.275
0.6
0.024 1.270
0.050
4.0
0.155
mm
inches
SCALE 6:1
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
SOLDERING FOOTPRINT*
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PACKAGE DIMENSIONS
SC−70−5 (SC−88A)
SQ SUFFIX
CASE 419A−02
ISSUE G
SOLDERING FOOTPRINT*
NOTES:
1. DIMENSIONING AND TOLERANCING
PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. 419A−01 OBSOLETE. NEW STANDARD
419A−02.
4. DIMENSIONS A AND B DO NOT INCLUDE
MOLD FLASH, PROTRUSIONS, OR GATE
BURRS.
DIM
A
MIN MAX MIN MAX
MILLIMETERS
1.80 2.200.071 0.087
INCHES
B1.15 1.350.045 0.053
C0.80 1.100.031 0.043
D0.10 0.300.004 0.012
G0.65 BSC0.026 BSC
H−−− 0.10−−−0.004
J0.10 0.250.004 0.010
K0.10 0.300.004 0.012
N0.20 REF0.008 REF
S2.00 2.200.079 0.087
B0.2 (0.008) MM
12 3
45
A
G
S
D 5 PL
H
C
N
J
K
−B−
mm
inches
SCALE 20:1
0.65
0.025
0.65
0.025
0.50
0.0197
0.40
0.0157
1.9
0.0748
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
NCS2500
http://onsemi.com
16
PACKAGE DIMENSIONS
SOT23−5 (TSOP−5)
SN SUFFIX
CASE 483−02
ISSUE C
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
3. MAXIMUM LEAD THICKNESS INCLUDES
LEAD FINISH THICKNESS. MINIMUM LEAD
THICKNESS IS THE MINIMUM THICKNESS
OF BASE MATERIAL.
4. A AND B DIMENSIONS DO NOT INCLUDE
MOLD FLASH, PROTRUSIONS, OR GATE
BURRS.
DIM MIN MAX MIN MAX
INCHESMILLIMETERS
A2.90 3.10 0.1142 0.1220
B1.30 1.70 0.0512 0.0669
C0.90 1.10 0.0354 0.0433
D0.25 0.50 0.0098 0.0197
G0.85 1.05 0.0335 0.0413
H0.013 0.100 0.0005 0.0040
J0.10 0.26 0.0040 0.0102
K0.20 0.60 0.0079 0.0236
L1.25 1.55 0.0493 0.0610
M0 10 0 10
S2.50 3.00 0.0985 0.1181
0.05 (0.002)
123
54
S
AG
L
B
D
H
C
KM
J
___ _
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