NEC SILICON SWITCHING DIODES __ 1S$222,1$$223 HIGH SPEED SWITCHING SILICON EPITAXIAL DIODES MINI MOLD FEATURES PACKAGE D AG E LUMENSIONS Low capacitance: C,=4.0 pF MAX. High speed switching: t,, = 3.0 ns MAX. Wide applications including switching, limitter, clipper. ABSOLUTE MAXIMUM RATINGS Maximum Voltages and Currents (Tg= 25 C) 18$222 188223 Peak Reverse Voltage Vam 70 100 v DC Reverse Voltage VR 70 100 v Peak Forward Current lem 300 300 mA Average Rectified Current ig 100 100 mA o Marking DC Forward Current fp 100 100 mA I Maximum Temperatures = | a Junction Temperature Tj 150 c 3 | s Storage Temperature Range Tsig ~5 to +150 c v ~ Thermai Resistance Connection Di 3 . : Top er E Junction to Ambient Rehg-al 0.67 C/mw Cathode che C3 Marking : A7 Anode 1 NC. ELECTRICAL CHARACTERISTICS (Ta = 25 C) CHARACTERISTIC SYMBOL MIN. i Tye. i MAX. UNIT TEST CONDITIONS Vet 720 850 mv ip=10 ma Forward Voltage VE2 : 850 + 4000 mv ~ ip =50 mA veg *~*S;*t IO | 00 | lm | Cpe tomaAt<Cis~s~SCSY ~T4222 10 WA Va770V Reverse Current ip 188223 - 10 A : Va = 100 v _ Capacitance : Cy 2.0 40 pF Va =O, f= 1.0 MHz _ - ip=10MA,Va"6V, | Reverse Recovery Time tee 3.0 ns Ri= 100 &, See Test Circuit. NEC cannot assume any responsibility for any circuits shown or represent that they are free from patent infringement. NEC Corporatior 1985 NEC Comoratio: 9518S222, 1$$223 NEC accom eve TYPICAL CHARACTERISTICS (Tg = 25 C) FORWARD CURRENT vs. REVERSE CURRENT vs. FORWARD VOLTAGE REVERSE VOLTAGE 1000 10 500 Tq=1a0 200 2.0 100 10 < = 50 os 20 X02 = 10 G1 5 569 0.05 6 , 5 , p20 O a02 g 3 2 10 5 O01 ec 08 & 0008 ira 02 0.002 ~ oe O.1 ~ 0.001 0.05 0.0005 0.02 0.0002 001 0.0001 9 2 O4 06 OB 190 12 oO 19 20 30 49 50 60 78 Vp --Ferward Voltage-V Va - Reverse Voltage -- y FORWARD VOLTAGE TEMPERATURE TERMINAL CAPACITANCE vs. n. COEFFICIENT vs FORWARD CURRENT REVERSE VOLTAGE > E 30 : ' 30 T 2 [ i : i i f=1.0 MHz & | : 4 l | Tax25 C 2 4 Po 4 = t 3 mT | & | ' 8 mM & | o L. bo ; | 20 np pti wep et 5g 8 8 2 ht : & E & i o : i i a | 2 10 ' + E of bene 4 > i i | p ~ g dL. aan z o s | 1 bo | Q O1 02 O65 10 20 6010 20 60 100 810 igForward Current -mA Va Reverse Voitage -V 30SWITCHING CHARACTERISTICS TEST CIRCUIT Reverse recovery Rg=50 | t,- 30.6 ns | tp=+100 ns \puty Cycles 5 %! time : t,, 1$$222, 18S223 Circuit Capacitance C<1 pF Test circuit 1p =10 mA, Va =6.0V ry ona 1 tte oH He Gh-1o $ 1 ' bor | oa Sampling 0% puise i {i i il : |} Generator] Loeb eee ee R,=50 o : tr=0.35 ns 90 % L y VR VeVp+Ve input signal ip = 10 mA ter tre O01 by output signal Wave forms 37