ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
VCE = 2500 V
IF= 100 A
Die size: 12.4 * 12.4mm
Doc. No. 5SYA1658-00 Aug. 01
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Fast Recovery Low losses
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Soft reverse recovery
Maximum Rated Values (Tvj = 25°C, unless specified otherwise)
Parameter Symbol Conditions Values Unit
Max Reverse Voltage VRRM 2500 V
DC Forward Current IF100 A
Diode Characteristic Values (Tj = 25°C, unless specified otherwise)
Parameter Symbol Conditions min. typ. max. Unit
Forward Voltage VFIF = 50 A 1.4 2 V
Anode-Cathode leakage current IRRM VR = VRRM , Tvj = 125°C 3 mA
Mechanical Characteristics
Parameter Unit
Overall die L*W 12.4 * 12.4 mm
Exposed
Front metal L*W 9.9 * 9.9 mm
Dimensions
Thickness 290 +/- 20 µm
Front AISi1 /Ti/Ni/Ag 6 µm
Metallization Back AISi1 / Ti / Ni / Ag 3 µm
Diode-Die
5SLX12L2508
5SLX12L2508
Outline Drawing
Note: All dimensions are shown in mm
Positioning tolerance of anode contact area (shaded area) to the die centre : ± 0.3mm
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
ABB Switzerland Ltd Doc. No. 5SYA1658-00 Aug. 01
Semiconductors
Fabrikstrasse 3
CH-5600 Lenzburg, Switzerland
Telephone +41 (0)58 586 1419
Fax +41 (0)58 586 1306
Email abbsem@ch.abb.com
Internet www.abbsem.com
