IPI60R385CP
CoolMOSTM Power Transistor
Features
• Lowest figure-of-merit RON x Qg
• Ultra low gate charge
• Extreme dv/dt rated
• High peak current capability
• Qualified according to JEDEC1) for target applications
• Pb-free lead plating; RoHS compliant
CoolMOS CP is specially designed for:
• Hard switching SMPS topologies
Maximum ratings, at Tj=25 °C, unless otherwise specified
Parameter Symbol Conditions Unit
Continuous drain current IDTC=25 °C A
TC=100 °C
Pulsed drain current2) ID,pulse TC=25 °C
Avalanche energy, single pulse EAS ID=3.4 A, VDD=50 V 227 mJ
Avalanche energy, repetitive tAR
2),3) EAR ID=3.4 A, VDD=50 V
Avalanche current, repetitive tAR
2),3) IAR A
MOSFET dv/dt ruggedness dv/dtVDS=0...480 V V/ns
Gate source voltage VGS static V
AC (f>1 Hz)
Power dissipation Ptot TC=25 °C W
Operating and storage temperature Tj, Tstg °C
Value
9.0
5.7
27
±30
83
-55 ... 150
0.3
3
50
±20
VDS @ Tj,max 650 V
RDS(on),max 0.385 Ω
Qg,typ 17 nC
Product Summary
Type Package Ordering Code Marking
IPI60R385CP PG-TO262 SP000103250 6R385P
PG-TO262
Rev. 2.1 page 1 2007-02-15
IPI60R385CP
Maximum ratings, at Tj=25 °C, unless otherwise specified
Parameter Symbol Conditions Unit
Continuous diode forward current ISA
Diode pulse current2) IS,pulse 27
Reverse diode dv/dt4) dv/dt15 V/ns
Parameter Symbol Conditions Unit
min. typ. max.
Thermal characteristics
Thermal resistance, junction - case RthJC - - 1.5 K/W
RthJA leaded - - 62
Soldering temperature,
wavesoldering only allowed at leads Tsold
1.6 mm (0.063 in.)
from case for 10 s - - 260 °C
Electrical characteristics, at Tj=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage V(BR)DSS VGS=0 V, ID=250 µA 600 - - V
Gate threshold voltage VGS(th) VDS=VGS, ID=0.34 mA 2.5 3 3.5
Zero gate voltage drain current IDSS
VDS=600 V, VGS=0 V,
Tj=25 °C --1µA
VDS=600 V, VGS=0 V,
Tj=150 °C -10-
Gate-source leakage current IGSS VGS=20 V, VDS=0 V - - 100 nA
Drain-source on-state resistance RDS(on)
VGS=10 V, ID=5.2 A,
Tj=25 °C - 0.35 0.385 Ω
VGS=10 V, ID=5.2 A,
Tj=150 °C - 0.94 -
Gate resistance RGf=1 MHz, open drain - 1.8 - Ω
Values
Thermal resistance, junction -
ambient
Value
TC=25 °C
5.2
Rev. 2.1 page 2 2007-02-15
IPI60R385CP
Parameter Symbol Conditions Unit
min. typ. max.
Dynamic characteristics
Input capacitance Ciss - 790 - pF
Output capacitance Coss -38-
Effective output capacitance, energy
related5) Co(er) -36-
Effective output capacitance, time
related6) Co(tr) -96-
Turn-on delay time td(on) -10-ns
Rise time tr-5-
Turn-off delay time td(off) -40-
Fall time tf-5-
Gate Charge Characteristics
Gate to source charge Qgs -4-nC
Gate to drain charge Qgd -6-
Gate charge total Qg-1722
Gate plateau voltage Vplateau - 5.0 - V
Reverse Diode
Diode forward voltage VSD
VGS=0 V, IF=5.2 A,
Tj=25 °C - 0.9 1.2 V
Reverse recovery time trr - 260 - ns
Reverse recovery charge Qrr - 3.1 - µC
Peak reverse recovery current Irrm -24-A
1) J-STD20 and JESD22
2) Pulse width tp limited by Tj,max
Values
VGS=0 V, VDS=100 V,
f=1 MHz
VDD=400 V,
VGS=10 V, ID=5.2 A,
RG=3.3 Ω
VDD=400 V, ID=5.2 A,
VGS=0 to 10 V
VGS=0 V, VDS=0 V
to 480 V
5) Co(er) is a fixed capacitance that gives the same stored energy as Coss while VDS is rising from 0 to 80% VDSS.
VR=400 V, IF=IS,
diF/dt=100 A/µs
6) Co(tr) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS.
3) Repetitive avalanche causes additional power losses that can be calculated as PAV=EAR*f.
4) ISD=ID, di/dt<=400A/µs, VDClink=400V, Vpeak<V(BR)DSS, Tj<Tjmax, identical low side and high side switch.
Rev. 2.1 page 3 2007-02-15
IPI60R385CP
1 Power dissipation 2 Safe operating area
Ptot=f(TC)ID=f(VDS); TC=25 °C; D=0
parameter: tp
3 Max. transient thermal impedance 4 Typ. output characteristics
ZthJC=f(tP)ID=f(VDS); Tj=25 °C
parameter: D=t p/Tparameter: VGS
0
20
40
60
80
100
0 40 80 120 160
TC [°C]
Ptot [W]
1 µs
10 µs
100 µs
1 ms
10 ms
DC
103
102
101
100
102
101
100
10-1
VDS [V]
ID [A]
single pulse
0.01
0.02
0.05
0.1
0.2
0.5
100
10-1
10-2
10-3
10-4
10-5
101
100
10-1
10-2
tp [s]
ZthJC [K/W]
4.5 V
5 V
5.5 V
6 V
7 V
8 V
10 V
20 V
0
5
10
15
20
25
0 5 10 15 20
VDS [V]
ID [A]
limited by on-state
resistance
Rev. 2.1 page 4 2007-02-15
IPI60R385CP
5 Typ. output characteristics 6 Typ. drain-source on-state resistance
ID=f(VDS); Tj=150 °C RDS(on)=f(ID); Tj=150 °C
parameter: VGS parameter: VGS
7 Drain-source on-state resistance 8 Typ. transfer characteristics
RDS(on)=f(Tj); ID=5.2 A; VGS=10 V ID=f(VGS); |VDS|>2|ID|RDS(on)max
parameter: Tj
typ
98 %
0
0.2
0.4
0.6
0.8
1
1.2
-60 -20 20 60 100 140 180
Tj [°C]
RDS(on) [Ω]
C °25
C °150
0
4
8
12
16
20
24
28
32
36
40
0246810
VGS [V]
ID [A]
4.5 V
5 V
5.5 V
6 V
7 V
8 V
10 V
20 V
0
2
4
6
8
10
12
14
16
0 5 10 15 20
VDS [V]
ID [A]
5 V 5.5 V
6 V 6.5 V
7 V
20 V
0
0.4
0.8
1.2
1.6
0 5 10 15 20
ID [A]
RDS(on) [Ω]
Rev. 2.1 page 5 2007-02-15
IPI60R385CP
9 Typ. gate charge 10 Forward characteristics of reverse diode
VGS=f(Qgate); ID=5.2 A pulsed IF=f(VSD)
parameter: VDD parameter: Tj
11 Avalanche energy 12 Drain-source breakdown voltage
EAS=f(Tj); ID=3.4 A; VDD=50 V VBR(DSS)=f(Tj); ID=0.25 mA
25 °C
150 °C
25 °C, 98%
150 °C, 98%
102
101
100
10-1
0 0.5 1 1.5 2
VSD [V]
IF [A]
120 V
400 V
0
1
2
3
4
5
6
7
8
9
10
0 5 10 15 20
Qgate [nC]
VGS [V]
540
580
620
660
700
-60 -20 20 60 100 140 180
Tj [°C]
VBR(DSS) [V]
0
50
100
150
200
250
20 60 100 140 180
Tj [°C]
EAS [mJ]
Rev. 2.1 page 6 2007-02-15
IPI60R385CP
13 Typ. capacitances 14 Typ. Coss stored energy
C=f(VDS); VGS=0 V; f=1 MHz Eoss=f(V DS)
0
2
4
6
0 100 200 300 400 500 600
VDS [V]
Eoss [µJ]
Ciss
Coss
Crss
105
104
103
102
101
100
0 100 200 300 400 500
VDS [V]
C [pF]
Rev. 2.1 page 7 2007-02-15
IPI60R385CP
Definition of diode switching characteristics
Rev. 2.1 page 8 2007-02-15
IPI60R385CP
PG-TO262-3-1 : Outlines
Dimensions in mm/inches:
Rev. 2.1 page 9 2007-02-15
IPI60R385CP
Published by
Infineon Technologies AG
81726 München, Germany
© Infineon Technologies AG 2006.
A
ll Rights Reserved.
A
ttention please!
The information given in this data sheet shall in no event be regarded as a guarantee of conditions o
characteristics (“Beschaffenheitsgarantie”). With respect to any examples or hints given herein, any typica
values stated herein and/or any information regarding the application of the device, Infineon Technologie
s
hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties o
non-infringement of intellectual property rights of any third party
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Rev. 2.1 page 10 2007-02-15