CJD41C NPN CJD42C PNP COMPLEMENTARY SILICON POWER TRANSISTOR Central . DESCRIPTION: The CENTRAL SEMICONDUCTOR CJD41C, DPAKE! DPAK CASE CJD42C types are Complementary Silicon Power Transistors manufactured by the epitaxial base process, mounted in a surface mount package designed for power amplifier and high speed switching applications. MAXIMUM RATINGS (Tc=25C) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Peak Collector Current Base Current Power Dissipation (TG=25C) Power Dissipation (T,=25C) Operating and Storage Junction Temperature Thermal Resistance Thermal Resistance SYMBOL UNITS VCBO 100 V VcEO 100 Vv VEBO 5.0 Vv Io 6.0 A lom 10 A Ip 2.0 A Pp 20 Ww Pp 1.75 Ww ost -65 . x 50 oc JC . OA 71.4 oC/W ELECTRICAL CHARACTERISTICS (Tc=25C unless otherwise noted) SYMBOL TEST CONDITIONS MIN MAX UNITS ICEO Vope=60V 50 pA IcES Voe=100V 10 pA lEBo Vep=5.0V 500 HA BVCEO Ic=30mA 100 Vv VCE(SAT) Io=6.0A, Ip=600MA 1.5 Vv VBE(ON) Vop=4.0V, Ic=6.0A 2.0 Vv hee Vope=4.0V, Ic=300mA 30 hee Voe=4.0V, Ic=3.0A 15 75 fr VoE=10V, Io=500mA, f=1.0MHz 3.0 MHz Nte Voe=10V, l=500mA, f=1.OkHz 20 112All dimensions in inches (mm). TOP VIEW .250(6.35) .086(2.19) -265(6.73) 004(2.40) > .018(0.45 .205(5.20 ~o2aoey | "215(5.46) eoso a fee a NI r .235(5.97) ' '240(6.10) _.368(9.35) _ pee eee . SOO aay 40) | uli 23 .020(0.51 MINIMUM a L or 8 - : .025(0.64 owns) eS aS tay > "181(4.60) LEAD CODE: 1) BASE 2) COLLECTOR 3) EMITTER 4) COLLECTOR a7 Nr SHEET Ri 113