1Characteristics
Table 1. Absolute maximum ratings
Symbol Parameters Value Unit
IT(RMS) RMS on-state current (full sine wave)
SOT-223 Ttab = 90 °C
1 A
TO-92 TL = 50 °C
SMBflat-3L Ttab = 107 °C
ITSM
Non repetitive surge peak on-state current
(full cycle, Tj initial = 25 °C)
F = 50 Hz tp = 20 ms 8
A
F = 60 Hz tp = 16.7 ms 8.5
I2t I2t value for fusing tp = 10 ms 0.35 A2s
dl/dt
Critical rate of rise of on-state current
IG = 2 x IGT , tr ≤ 100 ns F = 120 Hz Tj = 125 °C 20 A/µs
IGM Peak gate current tp = 20 µs Tj = 125 °C 1 A
PG(AV) Average gate power dissipation Tj = 125 °C 1 W
Tstg Storage junction temperature range -40 to +150 °C
TjOperating junction temperature range -40 to +125 °C
Table 2. Electrical characteristics (Tj = 25 °C, unless otherwise specified)
Symbol Parameters Quadrant
Value
UnitZ01
03 07 09 10
IGT(1)
VD = 12 V, RL = 30 Ω
I - II - III
Max.
3 5 10 25
mA
IV 5 7 10 25
VGT All Max. 1.3 V
VGD VD = VDRM, RL = 3.3 kΩ, Tj = 125 °C All Min. 0.2 V
IH(2) IT = 50 mA Max. 7 10 10 25 mA
ILIG = 1.2 IGT
I - III - IV Max. 7 10 15 25
mA
II Max. 15 20 25 50
dV/dt(2) VD = 67 % VDRM gate open, Tj = 110 °C Min. 10 20 50 100 V/µs
(dV/dt)c(2) (dI/dt)c = 0.44 A/ms, Tj = 110 °C Min. 0.5 1 2 5 V/µs
1. Minimum IGT is guaranteed at 5 % of IGT max.
2. For both polarities of A2 referenced to A1
Z01
Characteristics
DS2116 - Rev 11 page 2/16