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SENSITRON
SEMICONDUCTOR
TECHNICAL DATA
DATA SHEET 619, REV -
HERMETIC POWER MOSFET
P-CHANNEL
FEATURES:
• 100 Volt, 0.31 Ohm, -9.3 A MOSFET
• Fast Switching
• Low RDS (on)
• Equivalent to IRFY9130 Series
• Add a “C” to the part number for ceramic seals, SHDC226309
MAXIMUM RATINGS ALL RATINGS ARE AT TC = 25°C UNLESS OTHERWISE SPECIFIED.
RATING SYMBOL MIN. TYP. MAX. UNITS
GATE TO SOURCE VOLTAGE VGS - - ±20 Volts
ON-STATE DRAIN CURRENT @ TC = 25°C ID (on) - - -9.3 Amps
PULSED DRAIN CURRENT @ TC = 25°C IDM - - 5.8 Amps
OPERATING AND STORAGE TEMPERATURE TOP/TSTG -55 - +150 °C
THERMAL RESISTANCE, JUNCTION TO CASE RthJC - - 1.4 °C/W
TOTAL DEVICE DISSIPATION @ TC = 25°C PD - - 89 Watts
ELECTRICAL CHARACTERISTICS
DRAIN TO SOURCE BREAKDOWN VOLTAGE
VGS = 0V, ID = 1.0 mA BVDSS -100 - - Volts
GATE TO SOURCE ON-STATE VOLTAGE
VGS = -10V, ID = -9.3A, VDS = 0.5 x VDS Max. Qgs 1.0 - 7.1 nC
GATE DRAIN CHARGE
VGS = -10V, ID = -9.3A, VDS = VDS Max. x 0.8 Qgd 2.1 - 21 nC
STATIC DRAIN TO SOURCE ON STATE RESISTANCE
VGS = -10V, ID = -5.8A
VGS = -10V, ID = -9.3A
RDS(ON) - -
0.31
0.36
Ω
GATE THRESHOLD VOLTAGE VDS = VGS, ID = -250µA VGS(th) -2.0 - -4.0 Volts
FORWARD TRANSCONDUCTANCE
VDS ≥ 15VDS(on), ID = -5.8A gfs 2.5 - - S(1/Ω)
ZERO GATE VOLTAGE DRAIN CURRENT
VDS = 0.8x Max. Rating, VGS = 0V
VDS = 0.8x Max. Rating, VGS = 0V, TJ = 125°C
IDSS - -
-25
-250
µA
GATE TO SOURCE LEAKAGE FORWARD VGS = 20V
GATE TO SOURCE LEAKAGE REVERSE VGS = -20V IGSS - - 100
-100 nA
TURN ON DELAY TIME VDD = -50V,
RISE TIME ID = -9.3A,
TURN OFF DELAY TIME RG = 7.5Ω,
FALL TIME VGS = -10V
td(ON)
tr
td(OFF)
tf
- - 60
140
140
140
nsec
DIODE FORWARD VOLTAGE TC = 25°C, IS = -9.3A,
VGS = 0V VSD - - -4.7 Volts
REVERSE RECOVERY TIME TJ = 25°C,
IS = -9.3 A, di/dt = -100A/µsec,
VDD ≤ -50 V
trr - -
250
nsec
INPUT CAPACITANCE VGS = 0 V,
OUTPUT CAPACITANCE VDS = 25 V,
REVERSE TRANSFER CAPACITANCE f = 1.0MHz
Ciss
Coss
Crss
- 800
350
125
-
pF
SHD226309