•221 WEST INDUSTRY COURT • DEER PARK, NY 11729-4681 • PHONE (516) 586-7600 • FAX (516) 242-9798•
• World Wide Web Site - http://www.sensitron.com • E-Mail Address - sales@sensitron.com •
SENSITRON
SEMICONDUCTOR
TECHNICAL DATA
DATA SHEET 619, REV -
HERMETIC POWER MOSFET
P-CHANNEL
FEATURES:
• 100 Volt, 0.31 Ohm, -9.3 A MOSFET
• Fast Switching
• Low RDS (on)
• Equivalent to IRFY9130 Series
• Add a “C” to the part number for ceramic seals, SHDC226309
MAXIMUM RATINGS ALL RATINGS ARE AT TC = 25°C UNLESS OTHERWISE SPECIFIED.
RATING SYMBOL MIN. TYP. MAX. UNITS
GATE TO SOURCE VOLTAGE VGS - - ±20 Volts
ON-STATE DRAIN CURRENT @ TC = 25°C ID (on) - - -9.3 Amps
PULSED DRAIN CURRENT @ TC = 25°C IDM - - 5.8 Amps
OPERATING AND STORAGE TEMPERATURE TOP/TSTG -55 - +150 °C
THERMAL RESISTANCE, JUNCTION TO CASE RthJC - - 1.4 °C/W
TOTAL DEVICE DISSIPATION @ TC = 25°C PD - - 89 Watts
ELECTRICAL CHARACTERISTICS
DRAIN TO SOURCE BREAKDOWN VOLTAGE
VGS = 0V, ID = 1.0 mA BVDSS -100 - - Volts
GATE TO SOURCE ON-STATE VOLTAGE
VGS = -10V, ID = -9.3A, VDS = 0.5 x VDS Max. Qgs 1.0 - 7.1 nC
GATE DRAIN CHARGE
VGS = -10V, ID = -9.3A, VDS = VDS Max. x 0.8 Qgd 2.1 - 21 nC
STATIC DRAIN TO SOURCE ON STATE RESISTANCE
VGS = -10V, ID = -5.8A
VGS = -10V, ID = -9.3A
RDS(ON) - -
0.31
0.36
Ω
GATE THRESHOLD VOLTAGE VDS = VGS, ID = -250µA VGS(th) -2.0 - -4.0 Volts
FORWARD TRANSCONDUCTANCE
VDS ≥ 15VDS(on), ID = -5.8A gfs 2.5 - - S(1/Ω)
ZERO GATE VOLTAGE DRAIN CURRENT
VDS = 0.8x Max. Rating, VGS = 0V
VDS = 0.8x Max. Rating, VGS = 0V, TJ = 125°C
IDSS - -
-25
-250
µA
GATE TO SOURCE LEAKAGE FORWARD VGS = 20V
GATE TO SOURCE LEAKAGE REVERSE VGS = -20V IGSS - - 100
-100 nA
TURN ON DELAY TIME VDD = -50V,
RISE TIME ID = -9.3A,
TURN OFF DELAY TIME RG = 7.5Ω,
FALL TIME VGS = -10V
td(ON)
tr
td(OFF)
tf
- - 60
140
140
140
nsec
DIODE FORWARD VOLTAGE TC = 25°C, IS = -9.3A,
VGS = 0V VSD - - -4.7 Volts
REVERSE RECOVERY TIME TJ = 25°C,
IS = -9.3 A, di/dt = -100A/µsec,
VDD ≤ -50 V
trr - -
250
nsec
INPUT CAPACITANCE VGS = 0 V,
OUTPUT CAPACITANCE VDS = 25 V,
REVERSE TRANSFER CAPACITANCE f = 1.0MHz
Ciss
Coss
Crss
- 800
350
125
-
pF
SHD226309
•221 WEST INDUSTRY COURT • DEER PARK, NY 11729-4681 • PHONE (516) 586-7600 • FAX (516) 242-9798•
• World Wide Web Site - http://www.sensitron.com • E-Mail Address - sales@sensitron.com •
SENSITRON
DATA SHEET 619
REVISION -
MECHANICAL DIMENSIONS: in Inches / mm
PINOUT TABLE
DEVICE TYPE PIN 1 PIN 2 PIN 3
MOSFET
TO-257 PACKAGE DRAIN SOURCE GATE
SHD226309
1 2 3
.200
.190
(5.08
4.82)
.045
.035 (1.14
0.89)
.120(3.05) BSC
.430
.410 (10.92
10.41)
.420
.410 (10.67
10.41)
.665
.645 (16.89
16.38)
.537
.527 (13.64
13.39)
1.132
1.032 (28.75
26.21)
.035
.025 (0.89
0.63)
3 Places
.100(2.54) BSC
2 Places
.150
.140 (3.81
3.56) Dia.
TO-257
• 221 West Industry Court Deer Park, NY 11729-4681 (631) 586-7600 FAX (631) 242-9798 •
• World Wide Web - http://www.sensitron.com • E-Mail Address - sales@sensitron.com •
SENSITRON
SEMICONDUCTOR
TECHNICAL DATA
DISCLAIMER:
1- The information given herein, including the specifications and dimensions, is subject to change without prior notice to improve product
characteristics. Before ordering, purchasers are advised to contact the Sensitron Semiconductor sales department for the latest version
of the datasheet(s).
2- In cases where extremely high reliability is required (such as use in nuclear power control, aerospace and aviation, traffic equipment,
medical equipment, and safety equipment), safety should be ensured by using semiconductor devices that feature assured safety or by
means of users’ fail-safe precautions or other arrangement.
3- In no event shall Sensitron Semiconductor be liable for any damages that may result from an accident or any other cause during
operation of the user’s units according to the datasheet(s). Sensitron Semiconductor assumes no responsibility for any intellectual
property claims or any other problems that ma y result from applications of information, products or circuits described in the datasheets.
4- In no event shall Sensitron Semiconductor be liable for any failure in a semiconductor device or any secondary damage resulting from
use at a value exceeding the absolute maximum rating.
5- No license is granted by the datasheet(s) under any patents or other rights of any third party or Sensitron Semiconductor.
6- The datasheet(s) may not be reproduced or duplicated, in any form, in whole or part, without the expressed written permission of
Sensitron Semiconductor.
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