S1S2
D1D2
NC NC
NC NC
IN1
V–
V+
IN2
VLVR
Dual-In-Line
1
2
3
4
5
6
7
14
13
12
11
10
9
8
Top View
Refer to JAN38510 Information, Military Section
1
Top View
VR
S1
2
3
456
7
8
9
10
V–
IN2
D2
S2
D1
IN1
V+
VL
1
2
3
4
5
6
7
14
13
12
11
10
9
8
Top View
Flat
Package
S1S2
D1D2
NC NC
NC NC
IN1IN2
V+ V–*
VLVRMetal Can
DG180/181/182
Vishay Siliconix
Document Number: 70031
S-52895—Rev. D, 16-Jun-97 www.vishay.com FaxBack 408-970-5600
4-1
High-Speed Drivers with Dual SPST JFET Switches
Constant On-Resistance Over
Entire Analog Range
Low Leakage
Low Crosstalk
Rad Hardness
Low Distortion
Eliminates Large Signal Errors
High Precision
High Bandwidth Capability
Fault Protection
Audio Switching
Video Switching
Sample/Hold
Guidance and Control Systems
Aerospace
The DG180/181/182 are precision dual single-pole,
single-throw (SPST) analog switches designed to provide
accurate switching of video and audio signals. This series is
ideally suited for applications requiring a constant
on-resistance over the entire analog range.
The major difference in the devices is the on-resistance
(DG180—10 , DG181—30 , DG182—75 Reduced
errors are achieved through low leakage current (ID(on)
< 2 nA). Applications which benefit from the flat JFET
on-resistance include audio switching, video switching, and
data acquisition.
T o achieve fast and accurate switch performance, each device
comprises four n-channel JFET transistors and a TTL
compatible bipolar driver. In the on state, each switch conducts
current equally well in either direction. In the off condition, the
switches will block up to 20 V peak-to-peak, with feedthrough
of less than –60 dB at 10 MHz.
*Common to Substrate and Case
Logic Switch
0 ON
1 OFF
Logic
“
0
”
0.8 V
Logic
“0”
0
.
8
V
Logic
“
1
”
20V
L
og
i
c
“1”
2
.
0
V
DG180/181/182
Vishay Siliconix
www.vishay.com S FaxBack 408-970-5600
4-2 Document Number: 70031
S-52895—Rev. D, 16-Jun-97
ORDERING INFORMATION
Temp Range Package Part Number
–
25 to 85
_
C
10-Pin Metal Can DG181BA
–
25
to
85_C
14-Pin Sidebraze DG180BP
55 125 C
10 Pi M l C
DG180AA/883, 5962-8767301IA
55 125 C
10-Pin Metal Can DG181AA/883, JM38510/1 1 101BIA
55 125 C
DG182AA/883, JM38510/1 1 102BIA
55 125 C
14 Pi Sid b
DG180AP/883, 5962-8767301CA
–55 to 125_C14-Pin Sidebraze DG181AP/883, JM38510/1 1101BCA
DG182AP/883, JM38510/1 1 102BCA
14 Pi Fl P k
5962-8767301XA
14-Pin Flat Pack JM38510/11101BXA
JM38510/11102BXA
ABSOLUTE MAXIMUM RATINGS
V+ to V– 36 V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
V+ to VD 33 V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
VD to V– 33 V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
VD to VD 22 V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
VL to V– 36 V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
VL to VIN 8 V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
VL to VR 8 V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
VIN to VR8 V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
VR to V– 27 V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
VR to VIN 2 V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Current (S or D) DG180 200 mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Current (S or D) DG181, DG182 30 mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Current (All Other Pins) 30 mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature –65 to 150_C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Power Dissipationa
10-Pin Metal Canb450 mW. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
14-Pin Sidebrazec825 mW. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
14-Pin Flat Packd900 mW. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Notes:
a. All leads welded or soldered to PC Board.
b. Derate 6 mW/_C above 75_C
c. Derate 11 mW/_C above 75_C
d. Derate 10 mW/_C above 75_C
SCHEMATIC DIAGRAM (TYPICAL CHANNEL)
FIGURE 1.
VR
VLV+
S
IN
D
V–
DG180/181/182
Vishay Siliconix
Document Number: 70031
S-52895—Rev. D, 16-Jun-97 www.vishay.com S FaxBack 408-970-5600
4-3
Test Conditions
Unless Specified A Suffix
–55 to 125_CB Suffix
–25 to 85_C
Parameter Symbol V+ = 15 V, V– = –15 V, VL = 5 V
VR = 0 V, VIN = 2 V, 0.8 VfTempbTypcMindMaxdMindMaxdUnit
Analog Switch
Analog Signal RangeeVANALOG Full –7.5 15 –7.5 15 V
Drain-Source
On-Resistance rDS(on) IS = –10 mA, VD = –7.5 V Room
Full 7.5 10
20 15
25
Source Off
Lk C t
IS(off)
VS = "10 V, VD = #10 V
V+ = 10 V, V– = –20 V Room
Hot 0.05 10
1000 15
300
A
Leakage Current
I
S(off) VS = "7.5 V, VD = #7.5 V Room
Hot 0.05 10
1000 15
300
A
Drain Off
Lk C t
ID(off)
VS = "10 V, VD = #10 V
V+ = 10 V, V– = –20 V Room
Hot 0.04 10
1000 15
300 nA
Leakage Current
I
D(off) VS = "7.5 V, VD = #7.5 V Room
Hot 0.03 10
1000 15
300
Channel On
Leakage Current ID(on) VD = VS = "7.5 V Room
Hot –0.1 –2
–200 –10
–200
Saturation Drain Current IDSS 2 ms Pulse Duration Room 300 mA
Digital Input
Input Current with
Input V oltage High IINH VIN = 5 V Room
Hot <0.01 10
20 10
20
A
Input Current with
Input V oltage Low IINL VIN = 0 V Full –30 –250 –250
A
Dynamic Characteristics
Turn-On Time ton
See Switching T ime Test Circuit
Room 240 400 600
ns
T urn-Off Time toff
See
Switching
Time
Test
Circuit
Room 140 200 250
ns
Source-Of f Capacitance CS(off)
f1MH
VS = –5 V, ID = 0 Room 21
Drain-Of f Capacitance CD(off) f = 1 MHz VD = –5 V, IS = 0 Room 17 pF
Channel-On
Capacitance CD(on)
f 1 MHz
VD = VS = 0 V Room 17
Off Isolation OIRR f = 1 MHz, RL = 75 Room >55 dB
Power Supplies
Positive Supply Current I+
V0V5V
Room 0.6 1.5 1.5
A
Negative Supply Current I–
VIN
=
0 V, or 5 V
Room –2.7 –5 –5
mA
Logic Supply Current IL
V
IN =
0
V
,
or
5
V
Room 3 4.5 4.5
mA
Reference Supply Current IRRoom –1 –2 –2
Notes:
a. Refer to PROCESS OPTION FLOWCHART .
b. Room = 25_C, Full = as determined by the operating temperature suf fix.
c. T ypical values are for DESIGN AID ONL Y, not guaranteed nor subject to production testing.
d. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet.
e. Guaranteed by design, not subject to production test.
f. VIN = input voltage to perform proper function.
DG180/181/182
Vishay Siliconix
www.vishay.com S FaxBack 408-970-5600
4-4 Document Number: 70031
S-52895—Rev. D, 16-Jun-97
Test Conditions
Unless Specified A Suffix
–55 to 125_CB Suffix
–25 to 85_C
Parameter Symbol V+ = 15 V, V– = –15 V, VL = 5 V
VR = 0 V, VIN = 2 V, 0.8 VfTempbTypcMindMaxdMindMaxdUnit
Analog Switch
Analog Signal RangeeVANALOG Full –7.5 15 –7.5 15 V
Drain-Source
On-Resistance rDS(on) IS = –10 mA, VD = –7.5 V Room
Full 18 30
60 50
75
Source Off
Lk C t
IS(off)
VS = "10 V, VD = #10 V
V+ = 10 V, V– = –20 V Room
Hot 0.05 1
100 5
100
A
Leakage Current
I
S(off) VS = "7.5 V, VD = #7.5 V Room
Hot 0.07 1
100 5
100
A
Drain Off
Lk C t
ID(off)
VS = "10 V, VD = #10 V
V+ = 10 V, V– = –20 V Room
Hot 0.5 1
100 5
100 nA
Leakage Current
I
D(off) VS = "7.5 V, VD = #7.5 V Room
Hot 0.6 1
100 5
100
Channel On
Leakage Current ID(on) VD = VS = "7.5 V Room
Hot –0.02 –2
–200 –10
–200
Digital Input
Input Current with
Input V oltage High IINH VIN = 5 V Room
Hot <0.01 10
20 10
20
A
Input Current with
Input V oltage Low IINL VIN = 0 V Full –30 –250 –250
A
Dynamic Characteristics
Turn-On Time ton
See Switching T ime Test Circuit
Room 85 150 180
ns
T urn-Off Time toff
See
Switching
Time
Test
Circuit
Room 95 130 150
ns
Source-Of f Capacitance CS(off)
f1MH
VS = –5 V, ID = 0 Room 9
F
Drain-Of f Capacitance CD(off) f = 1 MHz VD = –5 V, IS = 0 Room 6 pF
Channel-On Capacitance CD(on) VD = VS = 0 V Room 14
Off Isolation OIRR f = 1 MHz, RL = 75 Room >50 dB
Power Supplies
Positive Supply Current I+
V0V5V
Room 0.6 1.5 1.5
A
Negative Supply Current I–
VIN
=
0 V, or 5 V
Room –2.7 –5 –5
mA
Logic Supply Current IL
V
IN =
0
V
,
or
5
V
Room 3.1 4.5 4.5
mA
Reference Supply Current IRRoom –1 –2 –2
Notes:
a. Refer to PROCESS OPTION FLOWCHART .
b. Room = 25_C, Full = as determined by the operating temperature suf fix.
c. T ypical values are for DESIGN AID ONL Y, not guaranteed nor subject to production testing.
d. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet.
e. Guaranteed by design, not subject to production test.
f. VIN = input voltage to perform proper function.
DG180/181/182
Vishay Siliconix
Document Number: 70031
S-52895—Rev. D, 16-Jun-97 www.vishay.com S FaxBack 408-970-5600
4-5
Test Conditions
Unless Specified A Suffix
–55 to 125_CB Suffix
–25 to 85_C
Parameter Symbol V+ = 15 V, V– = –15 V, VL = 5 V
VR = 0 V, VIN = 2 V, 0.8 VfTempbTypcMindMaxdMindMaxdUnit
Analog Switch
Analog Signal RangeeVANALOG Full –10 15 –10 15 V
Drain-Source
On-Resistance rDS(on) IS = –10 mA, VD = –7.5 V Room
Full 35 75
150 100
150
Source Off
Lk C t
IS(off)
VS = "10 V, VD = #10 V
V+ = 10 V, V– = –20 V Room
Hot 0.05 1
100 5
100
A
Leakage Current
I
S(off) VS = "10 V, VD = #10 V Room
Hot 0.07 1
100 5
100
A
Drain Off
Lk C t
ID(off)
VS = "10 V, VD = #10 V
V+ = 10 V, V– = –20 V Room
Hot 0.4 1
100 5
100 nA
Leakage Current
I
D(off) VS = "10 V, VD = #10 V Room
Hot 0.5 1
100 5
100
Channel On
Leakage Current ID(on) VD = VS = "10 V Room
Hot –0.02 –2
–200 –10
–200
Digital Input
Input Current with
Input V oltage High IINH VIN = 5 V Room
Hot <0.01 10
20 10
20
A
Input Current with
Input V oltage Low IINL VIN = 0 V Full –30 –250 –250
A
Dynamic Characteristics
Turn-On Time ton
See Switching Time Test Circuit
Room 120 250 300
ns
T urn-Off Time toff
S
ee
S
w
it
c
hi
ng
Ti
me
T
es
t
Ci
rcu
it
Room 100 130 150 ns
Source-Of f Capacitance CS(off)
f1MH
VS = –5 V, ID = 0 Room 9
F
Drain-Of f Capacitance CD(off) f = 1 MHz VD = –5 V, IS = 0 Room 6 pF
Channel-On Capacitance CD(on) VD = VS = 0 V Room 14
Off Isolation OIRR f = 1 MHz, RL = 75 Room >50 dB
Power Supplies
Positive Supply Current I+
V0V5V
Room 0.6 1.5 1.5
A
Negative Supply Current I–
VIN
=
0 V, or 5 V
Room –2.7 –5 –5
mA
Logic Supply Current IL
V
IN =
0
V
,
or
5
V
Room 3.1 4.5 4.5
mA
Reference Supply Current IRRoom –1 –2 –2
Notes:
a. Refer to PROCESS OPTION FLOWCHART .
b. Room = 25_C, Full = as determined by the operating temperature suf fix.
c. T ypical values are for DESIGN AID ONL Y, not guaranteed nor subject to production testing.
d. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet.
e. Guaranteed by design, not subject to production test.
f. VIN = input voltage to perform proper function.
DG180/181/182
Vishay Siliconix
www.vishay.com S FaxBack 408-970-5600
4-6 Document Number: 70031
S-52895—Rev. D, 16-Jun-97
_
, I–, I+, I
IIN vs. VIN and TemperatureSupply Current vs. Temperature
Temperature (_C) Temperature (_C)
A)
(mA)ILR
I
IN (
5
4
3
2
1
0–55 –35 –15 5 25 45 65 85 105 125 0
100
80
60
40
20
–55 –35 –15 5 25 45 65 85 105 125
IL
I+
–IR
–I–
–IINL
IINH
VINL = 0
VINH = 5 V
Switching Time vs. VD and Temperature (DG180)rDS(on) vs. Temperature
Leakage vs. Temperature (DG180) Switching Time vs. VD and Temperature (DG181/182)
(ns)tON
,t
OFF
(nA)I , I
SD
Temperature (_C)
rDS(on) ()
(ns)tON
,t
OFF
Temperature (_C)
Temperature (_C) Temperature (_C)
100
1–50 –25 0 25 50 75 100 125
10
230
90
–55 –35 –15 5 25 45 65 85 105 125
210
190
170
150
130
110
VD = –7.5 V
IS = –10 mA
tOFF
tON
DG180
DG181
DG182
100
0.1 25 45 65 85 105 125
10
1
ID(on) ID(off)
IS(off)
V+ = 10 V
V– = –20 V
VL = 5 V
VR = 0
130
50
–55 –35 –15 5 25 45 65 85 105 125
120
110
100
90
80
70
60
tOFF
tON
VD = –7.5 V
VD = 7.5 V
VD = –7.5 V
VD = 7.5 V
DG180/181/182
Vishay Siliconix
Document Number: 70031
S-52895—Rev. D, 16-Jun-97 www.vishay.com S FaxBack 408-970-5600
4-7
_
ID(off) vs. Temperature (DG181/182)
(nA)
ID
Temperature (_C)
100
10
1
0.1 25 45 65 85 105 125
B Suffix
A Suffix
V+ = 10 V, V– = –20 V
VD = –10 V, VS = 10 V
Capacitance vs. VD or VS (DG180)
VD or VS – Drain or Source Voltage (V)
(pF)CS, D
30
26
22
18
14
10 –8 –4 0 4 8
CD(off)
CS(off)
CD(on)
f = 1 MHz
Off Isolation vs. Frequency
Capacitance vs. VD or VS (DG181/182)
VD or VS – Drain or Source Voltage (V) f – Frequency (Hz)
ISO (dB)
(pF)CS, D
100
90
80
70
60
50
40
30
20
10
0105106107108
V+ = 15 V, V– = –15 V
VR = 0, VL = 5 V
RL = 75
VIN 220 mVRMS
DG180
DG181/182
20
18
16
14
12
10
8
6
4
2
0–10 –8 –6 –4 –2 0 2 4 6 8 10
CD(off)
CS(off)
CD(on)
Capacitance is measured from test terminal
to common.
VINL = 0.8 V
VINH = 2 V
f = 1 MHz
DG180/181/182
Vishay Siliconix
www.vishay.com FaxBack 408-970-5600
4-8 Document Number: 70031
S-52895—Rev. D, 16-Jun-97
D
VLV+
V–
CL (includes fixture and stray capacitance)
VO
S
IN
–15 V
RL
1 kCL
100 pF
+15 V+5 V
VR
tON: VS = 3 V
tOFF:V
S
= –3 V
Feedthrough due to charge injection may result in spikes at the leading and trailing edge of the output waveform.
Logic
Input
Switch
Output
tOFF
tON
tr <10 ns
tf <10 ns
90%
50%
0 V
3 V
0 V
0 V
90%
FIGURE 2. Switching T ime
3 V
–3 V
VOUT +VSxRL
RL)rDS(on)
Switch
V+
Positive
Supply Voltage
(V)
V–
Negative
Supply
Voltage
(V)
VL
Logic Supply
Voltage
(V)
VR
Reference
Supply Voltage
(V)
VIN
Logic Input
Voltage
VINH(min)/VINL(max
)
(V)
VS
Analog
Voltage
Range
(V)
DG180
DG181
15b
10
12
–15
–20
–12
5
5
5
GND
GND
GND
2.0/0.8
2.0/0.8
2.0/0.8
–7.5 to 15
–12.5 to 10
–4.5 to 12
DG182
15b
10
12
–15
–20
–12
5
5
5
GND
GND
GND
2.0/0.8
2.0/0.8
2.0/0.8
–10 to 15
–15 to 10
–7 to 12
Notes:
a. Application Hints are for DESIGN AID ONLY, not guaranteed and not subject to production testing.
b. Electrical Parameter Chart based on V+ = 15 V, VL = 5 V, VR = GND
