LESHAN RADIO COMPANY, LTD.
G1–1/2
1
3
2
MAXIMUM RATINGS
Rating Symbol Value Unit
Continuous Reverse V oltage V R70 Vdc
Peak Forward Current I F100 mAdc
DEVICE MARKING
BAL99LT1 = JF
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Total Device Dissipation FR– 5 Board, (1) P D225 mW
TA = 25°C
Derate above 25°C 1.8 mW/°C
Thermal Resistance, Junction to Ambient R θJA 55 6 °C/W
Total Device Dissipation P D300 mW
Alumina Substrate, (2) TA = 25°C
Derate above 25°C 2.4 mW/°C
Thermal Resistance, Junction to Ambient R θJA 417 °C/W
Junction and Storage Temperature T J , T stg –55 to +150 °C
ELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted)
Characteristic Symbol Min Max Unit
OFF CHARACTERISTICS
Reverse V oltage Leakage Current I RµAdc
(V R = 70 Vdc) 2.5
(V R = 25 Vdc, T J = 150°C) 30
(V R = 70 Vdc, T J = 150°C) 50
Reverse Breakdown Voltage V (BR) 70 Vdc
(I R = 100 µAdc)
Forward V oltage V FmV
(I F = 1.0 mAdc) 715
(I F = 10 mAdc) 855
(I F = 50 mAdc) 1000
(I F = 150 mAdc) 1250
Recovery Current Q S
— 45 pC
(I F = 10 mAdc, V R = 5.0 Vdc, R L = 500 )
Diode Capacitance C D 1.5 pF
(V R = 0, f = 1.0 MHz)
Reverse Recovery T ime t rr 6.0 ns
(I
F
= I
R
= 10 mAdc, R
L
= 100 , measured at I
R
= 1.0 mAdc)
Forward Recovery V oltage V FR 1.75 Vdc
(I F = 10 mAdc, t r = 20 ns)
1. FR–5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
BAL99LT1
CASE 318–08, STYLE 18
SOT–23 (TO–236AB)
3
ANODE 2
CATHODE
Switching Diode
LESHAN RADIO COMPANY, LTD.
G1–2/2
BAL99LT1
100
10
1.0
0.1 0.2 0.4 0.6 0.8 1.0 1.2
T
A
= 85°C
T
A
= 25°C
T
A
= – 40°C
T
A
= 150°C
T
A
= 125°C
T
A
= 85°C
T
A
= 55°C
T
A
= 25°C
010 20 30 4050
10
1.0
0.1
0.01
0.001
02 4 6 8
0.68
0.64
0.60
0.56
0.52
I F , FORWARD CURRENT (mA)
C D , DIODE CAPACITANCE (pF)
V F , FORWARD VOLTAGE (VOLTS)
Figure 1. Forward Voltage V R , REVERSE VOLTAGE (VOLTS)
Figure 2. Leakage Current
V R , REVERSE VOLTAGE (VOLTS)
Figure 3. Capacitance
I R , REVERSE CURRENT (µA)