UTC 2SB772S PNP EPITAXIAL SILICON TRANSISTOR
UTC UNISONIC TECHNOLOGIES CO. LTD 1
MEDIUM POWER LOW VOLTAGE
TRANSISTOR
DESCRIPTION
The UTC 2SB772S is a medium power low voltage
transistor, designed for audio power amplifier, DC-DC
converter and voltage regulator.
FEATURES
*High current output up to 3A
*Low saturation voltage
*Complement to 2SD882S TO-92
1
1:EMITTER 2:COLLECTOR 3:BASE
ABSOLUTE MAXIMUM RATINGS ( Ta=25°C ,unless otherwise specified )
PARAMETER SYMBOL VALUE UNIT
Collector-Base Voltage VCBO -40 V
Collector-Emitter Voltage VCEO -30 V
Emitter-Base Voltage VEBO -5 V
Collector Dissipation( Tc=25°C) Pc 10 W
Collector Dissipation( Ta=25°C) Pc 1W
Collector Current(DC) Ic -3 A
Collector Current(PULSE) Ic -7 A
Base Current IB-0.6 A
Junction Temperature Tj150 °C
Storage Temperature TSTG -55 ~ +150 °C
ELECTRICAL CHARACTERISTICS(Ta=25°C,unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT
Collector Cut-Off Current ICBO VCB=-30V,IE=0 -1000 nA
Emitter Cut-Off Current IEBO VEB=-3V,Ic=0 -1000 nA
DC Current Gain(note 1) hFE1
hFE2 VCE=-2V,Ic=-20mA
VCE=-2V,Ic=-1A 30
100 200
150 400
Collector-Emitter Saturation Voltage VCE(sat) Ic=-2A,IB=-0.2A -0.3 -0.5 V
Base-Emitter Saturation Voltage VBE(sat) Ic=-2A,IB=-0.2A -1.0 -2.0 V
Current Gain Bandwidth Product fTVCE=-5V,Ic=-0.1A 80 MHz
Output Capacitance Cob VCB=-10V,IE=0,f=1MHz 45 pF
Note 1:Pulse test:PW<300µs,Duty Cycle<2%
CLASSIFICATION OF hFE
RANK QP E
RANGE 100-200 160-320 200-400
UTC 2SB772S PNP EPITAXIAL SILICON TRANSISTOR
UTC UNISONIC TECHNOLOGIES CO. LTD 2
TYPICAL PERFORMANCE CHARACTERISTICS
Fig.1 Static characteristics
-Collector-Emitter voltage(V)
-Ic,Collector current(A)
0 4 8 12 16 20
0
0.4
0.8
1.2
1.6
Tc,Case Temperature(
¢X
C)
-IB=1mA
-IB=2mA
-IB=3mA
-IB=4mA
-IB=5mA
-IB=6mA
-IB=7mA
-IB=8MA
-IB=9mA
Fig.2 Derating curve of safe
operating areas
- Ic Derating(%)
200150100500-50
0
50
100
150
S/b limited
Dissipation limited
Tc,Case Temperature(
¢X
C)
200150100500-50
Fig.3 Power Derating
Power Dissipation(W)
0
4
8
12
Fig.4 Collector Output
capacitance
-Collector-Base Voltage(v)
Output Capacitance(pF)
10010
-1 10-2 10
-3
101
102
103
100
I
E
=0
f=1MHz
Fig.5 Current gain-
bandwidth product
F
T
(MHz), Current gain-
bandwidth product
101
102
103
100
V
CE
=5V
Collector-Emitter Voltage
-Ic,Collector current(A)
Fig.6 Safe operating area
Ic(max),DC
Ic(max),Pulse
10mS
1mS
0.1mS
Ic,Collector current(A)
Fig.7 DC current gain
-Ic,Collector current(mA) -Ic,Collector current(mA)
Fig.8 Saturation Voltage
DC current Gain,H
FE
101
102
103
100
-Saturation Voltage(mV)
V
CE
=-2V
V
CE
(sat)
V
BE
(sat)
10-2 10
-1 10010110-2
10
-1
100
101
100101102
100101102103104100101102103104
100
101
102
103
104
I
B
=8mAI
B
=8mA
