10 sec Steady-State
VDS
VGS
4.2 3.5
3.3 2.8
IDM
1.4 1.0
0.9 0.64
TJ, TSTG
Symbol Typ Max
t ≤ 10s 70 90
Steady-State 100 125
Steady-State RθJL 63 80
Power Dissipation
TA=25°C
A
PDW
°C
TA=70°C
ID
Continuous Drain
Current A,F
TA=25°C
TA=70°C
Parameter Symbol
Gate-Source Voltage
Drain-Source Voltage
Absolute Maximum Ratings TA=25°C unless otherwise noted
V
Pulsed Drain Current B
Units
Maximum
30
±20
30
V
Maximum Junction-to-Lead C°C/W
Thermal Characteristics Units
Maximum Junction-to-Ambient A°C/W
°C/W
Maximum Junction-to-Ambient A
Junction and Storage Temperature Range
RθJA
Parameter
-55 to 150
AO3434
N-Channel Enhancement Mode Field Effect Transistor
Features
VDS (V) = 30V
ID = 4.2A (VGS = 10V)
RDS(ON) < 52mΩ (VGS = 10V)
RDS(ON) < 75mΩ (VGS = 4.5V)
ESD Protected
General Description
The AO3434 uses advanced trench technology to
provide excellent RDS(ON) and low gate charge.
This device is suitable for use as a load switch or
in PWM applications. It is ESD protected.
Standard Product AO3434 is Pb-free (meets
ROHS & Sony 259 specifications).
S
GD
TO-236
(SOT-23)
To
p
View
D
S
G
Alpha & Omega Semiconductor, Ltd. www.aosmd.com
AO3434
Symbol Min Typ Max Units
BVDSS 30 V
1
TJ=55°C 5
IGSS 10 uA
VGS(th) 1 1.32 1.8 V
ID(ON) 30 A
43 52
TJ=125°C 58 74
59 75 m
Ω
gFS 8.5 S
VSD 0.77 1 V
IS1.8 A
Ciss 269 340 pF
Coss 65 pF
Crss 41 pF
Rg1 1.5 Ω
Qg(10V) 5.7 7.2 nC
Qg(4.5V) 3nC
Qgs 1.37 nC
Qgd 0.65 nC
tD(on) 2.6 3.8 ns
tr5.5 8 ns
tD(off) 15.2 23 ns
tf3.7 5.5 ns
trr 15.5 21 ns
Qrr 7.1 nC
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Maximum Body-Diode Continuous Current
Input Capacitance
Output Capacitance
Turn-On DelayTime
DYNAMIC PARAMETERS
VGS=10V, VDS=15V, ID=4.2A
Total Gate Charge
Gate Drain Charge
VGS=0V, VDS=15V, f=1MHz
SWITCHING PARAMETERS
Turn-On Rise Time
Turn-Off DelayTime
VGS=10V, VDS=15V, RL=3.6Ω,
RGEN=3Ω
Turn-Off Fall Time
Total Gate Charge
Gate Source Charge
Gate resistance VGS=0V, VDS=0V, f=1MHz
mΩ
VGS=4.5V, ID=2A
IS=1A,VGS=0V
VDS=5V, ID=4.2A
RDS(ON) Static Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
IDSS µA
Gate Threshold Voltage VDS=VGS ID=250µA
VDS=30V, VGS=0V
VDS=0V, VGS= ±16V
Zero Gate Voltage Drain Current
Gate-Body leakage current
Electrical Characteristics (TJ=25°C unless otherwise noted)
STATIC PARAMETERS Parameter Conditions
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge IF=4.2A, dI/dt=100A/µs
Drain-Source Breakdown Voltage
On state drain current
ID=250µA, VGS=0V
VGS=10V, VDS=5V
VGS=10V, ID=4.2A
Reverse Transfer Capacitance
IF=4.2A, dI/dt=100A/µs
A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The
value in any given application depends on the user's specific board design.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient.
D. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA
curve provides a single pulse rating.
F.The current rating is based on the t≤10s thermal resistance rating.
Rev0: Mar. 2007
Alpha & Omega Semiconductor, Ltd. www.aosmd.com
AO3434
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTIC
S
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISIN
G
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
0
5
10
15
20
25
30
012345
VDS (Volts)
Fig 1: On-Region Characteristics
ID (A)
VGS=3V
4.5V
6V
10V 8V
4V
0
3
6
9
12
15
0123456
VGS(Volts)
Figure 2: Transfer Characteristics
ID(A)
30
40
50
60
70
80
0 5 10 15 20
ID (A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
RDS(ON) (mΩ)
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
1.0E+00
1.0E+01
0.0 0.2 0.4 0.6 0.8 1.0 1.2
VSD (Volts)
Figure 6: Body-Diode Characteristics
IS (A)
25°C
125°C
0.8
1
1.2
1.4
1.6
1.8
0 25 50 75 100 125 150 175
Temperature (°C)
Figure 4: On-Resistance vs. Junction
Temperature
Normalized On-Resistance
VGS=10V
Id=4.2A
VGS=4.5V
Id=3.5A
30
42
54
66
78
90
102
246810
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
RDS(ON) (mΩ)
25°C
125°C
VDS=5V
VGS=4.5V
V
GS
=10V
ID=4.2A
25°C
125°C
3.5V
Alpha & Omega Semiconductor, Ltd. www.aosmd.com
AO3434
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISIG
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
0
2
4
6
8
10
0123456
Qg (nC)
Figure 7: Gate-Charge Characteristics
VGS (Volts)
0
100
200
300
400
500
0 5 10 15 20 25 30
VDS (Volts)
Figure 8: Capacitance Characteristics
Capacitance (pF)
Ciss
0
5
10
15
20
25
30
0.001 0.01 0.1 1 10 100 1000
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Ambient (Note E)
Power (W)
0.01
0.1
1
10
0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance
ZθJA Normalized Transient
Thermal Resistance
Coss
Crss
VDS=15V
ID=4.2A
Single Pulse
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=125°C/W
Ton T
PD
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
TJ(Max)=150°C
TA=25°C
0.0
0.1
1.0
10.0
100.0
0.01 0.1 1 10 100
VDS (Volts)
ID (Amps)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
10
µ
s
10ms
1m
0.1s
DC
RDS(ON)
limited
TJ(Max)=150°C
TA=25°C
100
µ
Alpha & Omega Semiconductor, Ltd. www.aosmd.com