© Semiconductor Components Industries, LLC, 2009
September, 2009 Rev. 0
1Publication Order Number:
MBR20100CT/D
MBR2080CT, MBR2090CT,
MBR20100CT
SWITCHMODE
Power Rectifiers
This series uses the Schottky Barrier principle with a platinum
barrier metal. These stateoftheart devices have the following
features:
Features
20 A Total (10 A Per Diode Leg)
GuardRing for Stress Protection
Low Forward Voltage
175°C Operating Junction Temperature
Epoxy Meets UL 94 V0 @ 0.125 in
Low Power Loss/High Efficiency
High Surge Capacity
Low Stored Charge Majority Carrier Conduction
Shipped 50 units per plastic tube
PbFree Packages are Available*
Mechanical Characteristics:
Case: Epoxy, Molded
Weight: 1.9 grams (approximately)
Finish: All External Surfaces Corrosion Resistant and Terminal
Leads are Readily Solderable
Lead Temperature for Soldering Purposes:
260°C Max. for 10 Seconds
*For additional information on our PbFree strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
TO220AB
CASE 221A
PLASTIC
3
4
1
SCHOTTKY BARRIER
RECTIFIERS
20 AMPERES
80100 VOLTS
1
3
2, 4
2
MARKING DIAGRAM
AY WW
B20x0G
AKA
A = Assembly Location
Y = Year
WW = Work Week
B20x0 = Device Code
x = 8, 9 or 10
G = PbFree Device
AKA = Polarity Designator
http://onsemi.com
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
ORDERING INFORMATION
MBR2080CT, MBR2090CT, MBR20100CT
http://onsemi.com
2
MAXIMUM RATINGS (Per Diode Leg)
Rating Symbol
MBR
Unit
2080CT 2090CT 20100CT
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
VR
80 90 100 V
Average Rectified Forward Current
(Rated VR) TC = 133°C
IF(AV) 10 A
Peak Repetitive Forward Current
(Rated VR, Square Wave, 20 kHz) TC = 133°C
IFRM 20 A
Nonrepetitive Peak Surge Current
(Surge applied at rated load conditions halfwave,
single phase, 60 Hz)
IFSM 150 A
Peak Repetitive Reverse Surge Current (2.0 ms, 1.0 kHz) IRRM 0.5 A
Operating Junction Temperature (Note 1) TJ*65 to +175 °C
Storage Temperature Tstg *65 to +175 °C
Voltage Rate of Change (Rated VR) dv/dt 10,000 V/ms
THERMAL CHARACTERISTICS
Maximum Thermal Resistance JunctiontoCase
JunctiontoAmbient
RqJC
RqJA
2.0
60
°C/W
ELECTRICAL CHARACTERISTICS (Per Diode Leg)
Maximum Instantaneous Forward Voltage (Note 2)
(iF = 10 Amps, TC = 125°C)
(iF = 10 Amps, TC = 25°C)
(iF = 20 Amps, TC = 125°C)
(iF = 20 Amps, TC = 25°C)
vF
0.75
0.85
0.85
0.95
V
Maximum Instantaneous Reverse Current (Note 2)
(Rated dc Voltage, TC = 125°C)
(Rated dc Voltage, TC = 25°C)
iR
6.0
0.1
mA
1. The heat generated must be less than the thermal conductivity from JunctiontoAmbient: dPD/dTJ < 1/RqJA.
2. Pulse Test: Pulse Width = 300 ms, Duty Cycle 2.0%.
ORDERING INFORMATION
Device Package Shipping
MBR2080CT TO220
50 Units / Rail
MBR2080CTG TO220
(PbFree)
MBR2090CT TO220
50 Units / Rail
MBR2090CTG TO220
(PbFree)
MBR20100CT TO220
50 Units / Rail
MBR20100CTG TO220
(PbFree)
For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
MBR2080CT, MBR2090CT, MBR20100CT
http://onsemi.com
3
Figure 1. Typical Forward Voltage Per Diode Figure 2. Typical Reverse Current Per Diode
Figure 3. Typical Current Derating, Case, Per Leg Figure 4. Typical Current Derating, Ambient, Per Leg
Figure 5. Average Power Dissipation and
Average Current
0.60
vF, INSTANTANEOUS VOLTAGE (VOLTS)
20
50
10
VR, REVERSE VOLTAGE (VOLTS)
0
80
TC, CASE TEMPERATURE (°C)
15
0
TA, AMBIENT TEMPERATURE (°C)
200
20
0
40
4.0 8.00
AVERAGE CURRENT (AMPS)
20
8.0
6.0
4.0
2.0
0
6.0
iF, INSTANTANEOUS FORWARD CURRENT (AMPS)
I
I
IF(AV), AVERAGE FORWARD CURRENT (AMPS)
5.0
3.0
0.2 0.4 0.8 20 40 60 80
0.1
1.0
100 120 140 160 60 80 160
10 2012
14
1.0
0.5
1.0
, REVERSE CURRENT (mA)
R
10
, AVERAGE FORWARD CURRENT (AMPS)
F(AV)
2.0 14 16 18
10
12
dc
SQUARE WAVE
dc
TJ = 25°C
150°C
TJ = 150°C
125°C
100°C
0.01
25°C
10
20
15
10
100 120 140
AVERAGE POWER (WATTS)
RATED VOLTAGE
APPLIED
SQUARE WAVE
dc
RATED VOLTAGE APPLIED
RqJC = 2°C/W (HEATSINK)
RqJA = 16°C/W
(NO HEATSINK)
RqJA = 60°C/W
SQUARE WAVE
dc
TA = 25°C
125°C100°C
0.50.1 0.3 0.7 0.9 100
180
5.0 5.0
180
18
16 IPK/IAV = p
IPK/IAV = 5.0
IPK/IAV = 10
IPK/IAV = 20
0.0001
0.001
MBR2080CT, MBR2090CT, MBR20100CT
http://onsemi.com
4
PACKAGE DIMENSIONS
TO220
CASE 221A09
ISSUE AF
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION Z DEFINES A ZONE WHERE ALL
BODY AND LEAD IRREGULARITIES ARE
ALLOWED.
STYLE 6:
PIN 1. ANODE
2. CATHODE
3. ANODE
4. CATHODE
DIM MIN MAX MIN MAX
MILLIMETERSINCHES
A0.570 0.620 14.48 15.75
B0.380 0.405 9.66 10.28
C0.160 0.190 4.07 4.82
D0.025 0.035 0.64 0.88
F0.142 0.161 3.61 4.09
G0.095 0.105 2.42 2.66
H0.110 0.155 2.80 3.93
J0.014 0.025 0.36 0.64
K0.500 0.562 12.70 14.27
L0.045 0.060 1.15 1.52
N0.190 0.210 4.83 5.33
Q0.100 0.120 2.54 3.04
R0.080 0.110 2.04 2.79
S0.045 0.055 1.15 1.39
T0.235 0.255 5.97 6.47
U0.000 0.050 0.00 1.27
V0.045 --- 1.15 ---
Z--- 0.080 --- 2.04
B
Q
H
Z
L
V
G
N
A
K
F
123
4
D
SEATING
PLANE
T
C
S
T
U
R
J
ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
N. American Technical Support: 8002829855 Toll Free
USA/Canada
Europe, Middle East and Africa Technical Support:
Phone: 421 33 790 2910
Japan Customer Focus Center
Phone: 81357733850
MBR20100CT/D
SWITCHMODE is a trademark of Semiconductor Components Industries, LLC (SCILLC).
LITERATURE FULFILLMENT:
Literature Distribution Center for ON Semiconductor
P.O. Box 5163, Denver, Colorado 80217 USA
Phone: 3036752175 or 8003443860 Toll Free USA/Canada
Fax: 3036752176 or 8003443867 Toll Free USA/Canada
Email: orderlit@onsemi.com
ON Semiconductor Website: www.onsemi.com
Order Literature: http://www.onsemi.com/orderlit
For additional information, please contact your local
Sales Representative