DATA SH EET
Product specification
Supersedes data of 1999 Apr 08 2002 Nov 15
DISCRETE SEMICONDUCTORS
BCP69
PNP medium power transistor
b
ook, halfpage
M3D087
2002 Nov 15 2
Philips Semiconductors Product specification
PNP medium power transistor BCP69
FEATURES
•High current (max. 1 A)
•Low voltage (max. 20 V).
APPLICATIONS
•General purpose switching and amplification
•Power applications such as audio output stages.
DESCRIPTION
PNP medium power transistor in a SOT223 plastic
package. NPN complement: BCP68.
PINNING
PIN DESCRIPTION
1 base
2, 4 collector
3 emitter
Fig.1 Simplified outline (SOT223) and symbol.
handbook, halfpage
4
123
MAM288
Top view
3
2, 4
1
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
Note
1. Device mounted on a printed-circuit board, single-sided copper, tinplated, mounting pad for collector 1 cm2.
For other mounting conditions, see
“Thermal considerations for SOT223 in the General Part of associated
Handbook”.
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VCBO collector-base voltage open emitter −−32 V
VCEO collector-emitter voltage open base −−20 V
VEBO emitter-base voltage open collector −−5V
I
Ccollector current (DC) −−1A
I
CM peak collector current −−2A
I
BM peak base current −−200 mA
Ptot total power dissipation Tamb ≤25 °C; note 1 −1.35 W
Tstg storage temperature −65 +150 °C
Tjjunction temperature −150 °C
Tamb operating ambient temperature −65 +150 °C
2002 Nov 15 3
Philips Semiconductors Product specification
PNP medium power transistor BCP69
THERMAL CHARACTERISTICS
Note
1. Device mounted on a printed-circuit board, single-sided copper, tinplated, mounting pad for collector 1 cm2.
For other mounting conditions, see
“Thermal considerations for SOT223 in the General Part of associated
Handbook”.
CHARACTERISTICS
Tj=25°C unless otherwise specified.
SYMBOL PARAMETER CONDITIONS VALUE UNIT
Rth j-a thermal resistance from junction to ambient note 1 91 K/W
Rth j-s thermal resistance from junction to soldering point 10 K/W
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
ICBO collector cut-off current IE= 0; VCB =−25 V −−−100 nA
IE= 0; VCB =−25 V; Tj= 150 °C−−−10 µA
IEBO emitter cut-off current IC= 0; VEB =−5V −−−100 nA
hFE DC current gain IC=−5 mA; VCE =−10 V 50 −−
I
C
=−500 mA; VCE =−1 V; see Fig.2 85 −375
IC=−1 A; VCE =−1 V; see Fig.2 60 −−
DC current gain IC=−500 mA; VCE =−1 V; see Fig.2
BCP69-16 100 −250
BCP69-25 160 −375
DC current gain IC=−10 mA; VCE =−1.8 V; see Fig.3
BCP69-16/IN 140 −230
VCEsat collector-emitter saturation voltage IC=−1 A; IB=−100 mA −−−500 mV
VBE base-emitter voltage IC=−5 mA; VCE =−10 V −−620 −mV
IC=−1 A; VCE =−1V −−−1V
C
ccollector capacitance IE=i
e= 0; VCB =−5V; f=1MHz −48 −pF
fTtransition frequency IC=−10 mA; VCE =−5 V; f = 100 MHz 40 −−MHz
DC current gain ratio of the
complementary pairs IC= 0.5 A; VCE=1V −−1.6
hFE1
hFE2
-----------
2002 Nov 15 4
Philips Semiconductors Product specification
PNP medium power transistor BCP69
Fig.2 DC current gain; typical values.
BCP69
VCE =−1V.
handbook, full pagewidth
0
200
400
hFE
100
300
MGD845
−10−1−1IC (mA)
−10 −102−104
−103
handbook, full pagewidth
0
100
200
300
400
−10−1−1−10 −102IC (mA)
(1)
(2)
(3)
hFE
−103
MBL745
Fig.3 DC current gain; typical values.
BCP69-16/IN
VCE =−1.8 V. (1) Tamb = 150 °C.
(2) Tamb =25°C. (3) Tamb =−40 °C.
2002 Nov 15 5
Philips Semiconductors Product specification
PNP medium power transistor BCP69
PACKAGE OUTLINE
UNIT A1bpcDEe
1H
EL
pQywv
REFERENCES
OUTLINE
VERSION EUROPEAN
PROJECTION ISSUE DATE
IEC JEDEC EIAJ
mm 0.10
0.01
1.8
1.5 0.80
0.60
b1
3.1
2.9 0.32
0.22 6.7
6.3 3.7
3.3 2.3
e
4.6 7.3
6.7 1.1
0.7 0.95
0.85 0.1 0.10.2
DIMENSIONS (mm are the original dimensions)
SOT223 SC-73 97-02-28
99-09-13
wM
bp
D
b1
e1
e
A
A1
Lp
Q
detail X
HE
E
vMA
AB
B
c
y
0 2 4 mm
scale
A
X
132
4
Plastic surface mounted package; collector pad for good heat transfer; 4 leads SOT223
2002 Nov 15 6
Philips Semiconductors Product specification
PNP medium power transistor BCP69
DATA SHEET STATUS
Notes
1. Please consult the most recently issued data sheet before initiating or completing a design.
2. The product status of the device(s) described in this data sheet may have changed since this data sheet was
published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com.
3. For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status.
LEVEL DATA SHEET
STATUS(1) PRODUCT
STATUS(2)(3) DEFINITION
I Objective data Development This data sheet contains data from the objective specification for product
development. Philips Semiconductors reserves the right to change the
specification in any manner without notice.
II Preliminary data Qualification This data sheet contains data from the preliminary specification.
Supplementary data will be published at a later date. Philips
Semiconductors reserves the right to change the specification without
notice, in order to improve the design and supply the best possible
product.
III Product data Production This data sheet contains data from the product specification. Philips
Semiconductors reserves the right to make changes at any time in order
to improve the design, manufacturing and supply. Relevant changes will
be communicated via a Customer Product/Process Change Notification
(CPCN).
DEFINITIONS
Short-form specification The data in a short-form
specification is extracted from a full data sheet with the
same type number and title. For detailed information see
the relevant data sheet or data handbook.
Limiting values definition Limiting values given are in
accordance with the Absolute Maximum Rating System
(IEC 60134). Stress above one or more of the limiting
values may cause permanent damage to the device.
These are stress ratings only and operation of the device
attheseoratanyotherconditionsabovethosegiveninthe
Characteristics sections of the specification is not implied.
Exposure to limiting values for extended periods may
affect device reliability.
Application information Applications that are
described herein for any of these products are for
illustrative purposes only. Philips Semiconductors make
norepresentationorwarrantythatsuch applicationswillbe
suitable for the specified use without further testing or
modification.
DISCLAIMERS
Life support applications These products are not
designed for use in life support appliances, devices, or
systems where malfunction of these products can
reasonably be expected to result in personal injury. Philips
Semiconductorscustomersusingorselling theseproducts
for use in such applications do so at their own risk and
agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.
Right to make changes Philips Semiconductors
reserves the right to make changes in the products -
including circuits, standard cells, and/or software -
described or contained herein in order to improve design
and/or performance. When the product is in full production
(status ‘Production’), relevant changes will be
communicated via a Customer Product/Process Change
Notification (CPCN). Philips Semiconductors assumes no
responsibility or liability for the use of any of these
products, conveys no licence or title under any patent,
copyright, or mask work right to these products, and
makes no representations or warranties that these
products are free from patent, copyright, or mask work
right infringement, unless otherwise specified.
2002 Nov 15 7
Philips Semiconductors Product specification
PNP medium power transistor BCP69
NOTES
© Koninklijke Philips Electronics N.V. 2002 SCA74
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.
Philips Semiconductors – a world wide company
Contact information
For additional information please visit http://www.semiconductors.philips.com. Fax: +31 40 27 24825
For sales offices addresses send e-mail to: sales.addresses@www.semiconductors.philips.com.
Printed in The Netherlands 613514/04/pp8 Date of release: 2002 Nov 15 Document order number: 9397 750 10588
