TOSHIBA {fDISCRETE/OPTO} bb? pe js097250 OOoO4e4e 4 i 9097250 TOSHIBA. (DISCRETE /OPTO) * Siligon Epitaxial Planar Type aa Diode 67C 09292 _ 2 7-03-09 1N4154 TENTATIVE Unit in mm COMMUNICATION AND INDUSTRIAL APPLICATIONS. - ULTRA HIGH SPEED SWITCHING APPLICATIONS. a a eB FEATURES: __ . Low Forward Voltage : Vr=1,0V (Max.) z - Small Total Capacitance : Cp=4pF (Max,) z . Fast Reverse Recovery Time : tyy=2ns(Max.) a . Hermetically Sealded Miniature Glass Package. ft a 3 a ; CATHODE MARK MAXIMUM RATINGS (Ta=25C) CHARACTERISTIC SYMBOL RATING j UNIT gas z = Maximum (peak) Reverse Voltage. VRM 35 Vv 3 Reverse Voltage VR 25 Vv 8 Maximum (Peak) Forward Current Ie 450 mA JEDEO Donn = Average Forward Current Io 150 mA ELAg 30-40 Surge Current (1 as) Ipsm 2 A TOSHIBA 1-RALA Power Dissipation P 500 mW | Weight : 0.14g Junction Temperature Tj 200 C Storage Temperature Range Tstg -65~200 | C ELECTRICAL CHARACTERISTICS (Ta=25C) ; CHARACTERISTIC SYMBOL TEST CONDITION MIN. | TYP. | MAX. | UNIT Forward Voltage Ve(1)_| Tr=30mA 79-85 | 1.0 v Vr(2) | Tp=100mA - jo.95 | 1.2 v Reverse Current TR(1) | VR=25V = - 100 na IR(2) | Vr=25V, Ta=150C - - 100 uA Total Capacitance Cy Vr=0, f=lMHz - 1.5 | 4.0 pF Reverse Recovery Time trr e100 - - 2.0 | ns 127 - TOSHIBA CORPORATION