TGA4903-SM Ka-Band Medium Power Amplifier Key Features Measured Performance Bias conditions: Vd = 5 V, Id = 170 mA, Vg = -0.6 V, Typical * * * * * Frequency Range: 27 - 32 GHz Psat: 24 dBm, P1dB: 22 dBm Gain: 15 dB Return Loss: 10 dB Bias: Vd = 5 V, Id = 170 mA, Vg = -0.6 V Typical * Package Dimensions: 4 x 4 x 0.85 mm Primary Applications * * Vsat and Digital Radio Point-to-Multipoint Communications Product Description The TriQuint TGA4903-SM is a Ka-Band packaged medium Power Amplifier. The TGA4903-SM operates from 27-32 GHz and is designed using TriQuint's proven standard pHEMT production process. The TGA4903-SM typically provides 22 dBm of output power at 1 dB gain compression, with small signal gain of 15 dB. The TGA4903-SM is ideally suited for VSAT ground terminals, Point-to-Point Radios and Pointto-Multipoint communications. Evaluation Boards are available. Lead-free and RoHS compliant. Datasheet subject to change without notice. TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com April 2012 (c) Rev A 1 Table I Absolute Maximum Ratings 1/ Symbol Parameter Vd-Vg TGA4903-SM Value Notes Drain to Gate Voltage 12 V Vd Drain Voltage 8V Vg1 Vg2 Gate #1 Voltage Range Gate #2 Voltage Range -5 to 0 V -5 to 0 V Id1 Id2 Drain #1 Current Drain #2Current 352 mA 320 mA Ig1 Ig2 Gate #1 Current Range Gate #2 Current Range Pin Input Continuous Wave Power 18 dBm Channel Temperature 200 C Tchannel 2/ 2/ -0.9 to 16.5 mA -0.8 to 15 mA 2/ 1/ These ratings represent the maximum operable values for this device. Stresses beyond those listed under "Absolute Maximum Ratings" may cause permanent damage to the device and / or affect device lifetime. These are stress ratings only, and functional operation of the device at these conditions is not implied. 2/ Combinations of supply voltage, supply current, input power, and output power shall not exceed the maximum power dissipation listed in Table IV. Table II Recommended Operating Conditions Symbol Value Vd Drain Voltage 5V Id Drain Current 170 mA Drain Current under RF Drive 300 mA Id_Drive Vg 1/ Parameter 1/ Gate Voltage -0.6 V See Bias Procedures section for bias instructions. 2 TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com April 2012 (c) Rev A TGA4903-SM Table III RF Characterization Table SYMBOL PARAMETER TEST CONDITIONS MIN NOMINAL UNITS Gain Small Signal Gain f = 27 GHz 13 16 dB Gain Small Signal Gain f = 28-30 GHz 12 15 dB Gain Small Signal Gain f = 31-32 GHz 11 14 dB IRL Input Return Loss f = 27-32 GHz 10 dB ORL Output Return Loss f = 27-32 GHz 10 dB Psat Saturated Output Power f = 27-32 GHz 24 dBm P1dB Output Power @ 1dB Compression f = 27-32 GHz 22 dBm TOI Output TOI f = 27-32 GHz 27 dBm NF Noise Figure f = 27-32 GHz 12 dB 22 3 TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com April 2012 (c) Rev A TGA4903-SM Table IV Power Dissipation and Thermal Properties Parameter Test Conditions Value Notes 1/ 2/ Maximum Power Dissipation Tbaseplate = 70C Pd = 2.0 W Tchannel = 200 C Tm = 2.3 E4 Hrs Thermal Resistance, jc Vd = 5 V Id = 170 mA Pd = 0.85 W Tbaseplate = 70 C jc = 65.2 C/W Tchannel = 125 C Tm = 9.13 E6 Hrs Thermal Resistance, jc Under RF Drive Vd = 5 V Id = 300 mA Pout = 24.5 dBm Pd = 1.25 W Tbaseplate = 70 C jc = 65.2 C/W Tchannel = 151 C Tm = 8.92 E5 Hrs Mounting Temperature 30 Seconds 320 C Storage Temperature 1/ -65 to 150 C For a median life of 1E+6 hours, Power Dissipation is limited to Pd(max) = (150 C - Tbase C)/jc. 2/ Channel operating temperature will directly affect the device lifetime. For maximum life, it is recommended that channel temperatures be maintained at the lowest possible levels. Median Lifetime (Tm) vs. Channel Temperature 4 TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com April 2012 (c) Rev A Measured Data TGA4903-SM Bias conditions: Vd = 5 V, Id = 170 mA, Vg = -0.6 V Typical 5 April 2012 (c) Rev A Measured Data TGA4903-SM Bias conditions: Vd = 5 V, Id = 170 mA, Vg = -0.6 V Typical 6 TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com April 2012 (c) Rev A Measured Data TGA4903-SM Bias conditions: Vd = 5 V, Id = 170 mA, Vg = -0.6 V Typical 7 April 2012 (c) Rev A Measured Data TGA4903-SM Bias conditions: Vd = 5 V, Id = 170 mA, Vg = -0.6 V Typical 8 TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com April 2012 (c) Rev A TGA4903-SM Electrical Schematic Bias Procedures Bias-up Procedure Bias-down Procedure Connect Vg1 and Vg2 together. ("Vg") Connect Vd1 and Vd2 together. ("Vd") Turn off RF supply Vg set to -1.5 V Reduce Vg to -1.5V. Ensure Id ~ 0 mA Vd set to +5 V Turn Vd to 0 V Adjust Vg more positive until Id is 170 mA. This will be ~ Vg = -0.6 V Turn Vg to 0 V Apply RF signal to input 9 TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com April 2012 (c) Rev A TGA4903-SM Package Pinout Diagram TGA 4903 Date Code Lot Code Top View Bottom View Dot indicates Pin 1 Pin Description 1, 2, 4, 5, 6, 10, 11, 12, 14, 15, 16, 20, 21 GND 8,18 NC 3 RF Input 7 Vg1 9 Vg2 13 RF Output 17 Vd2 19 Vd1 10 TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com April 2012 (c) Rev A Mechanical Drawing Units: Millimeters TGA4903-SM GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed during handling, assembly and test. 11 TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com April 2012 (c) Rev A TGA4903-SM Recommended Assembly Diagram * C1: 0402 100pF cap * C2: 0603 1uF cap * R1: 0402 10 ohm resistor * In / Out tuning stubs for gain & power improvements * Rogers RO4003C 8mil thick with 0.5oz cladding GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed during handling, assembly and test. TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com April 2012 (c) Rev A 12 TGA4903-SM Recommended Board Tuning for Maximum Output Power A A B B B B A A NOTE: Ground vias located at sites A and B, above, and grounded metal pads on PCB top metal, located under the package "GND" pads (see page 10), are critical for RF performance GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed during handling, assembly and test. TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com April 2012 (c) Rev A 13 TGA4903-SM Assembly Notes Recommended Surface Mount Package Assembly * Proper ESD precautions must be followed while handling packages. * Clean the board with alcohol. Allow the circuit to fully dry. * TriQuint recommends using a conductive solder paste for attachment. Follow solder paste and reflow oven vendors' recommendations when developing a solder reflow profile. Typical solder reflow profiles are listed in the table below. * Hand soldering is not recommended. Solder paste can be applied using a stencil printer or dot placement. The volume of solder paste depends on PCB and component layout and should be well controlled to ensure consistent mechanical and electrical performance. * Clean the assembly with alcohol. Reflow Profile SnPb Pb Free Ramp-up Rate 3 C/sec 3 C/sec Activation Time and Temperature 60 - 120 sec @ 140 - 160 C 60 - 180 sec @ 150 - 200 C Time above Melting Point 60 - 150 sec 60 - 150 sec Max Peak Temperature 240 C 260 C Time within 5 C of Peak Temperature 10 - 20 sec 10 - 20 sec Ramp-down Rate 4 - 6 C/sec 4 - 6 C/sec Ordering Information Part Package Style TGA4903-SM QFN 4x4 Surface Mount GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed during handling, assembly and test. 14 TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com April 2012 (c) Rev A