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TGA4903-SM
April 2012 © Rev A
TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com
Datasheet subject to change without notice.
Primary Applications
Product Description
Key Features
Measured Performance
Ka-Band Medium Power Amplifier
•Vsat and Digital Radio
•Point-to-Multipoint Communications
The TriQuint TGA4903-SM is a Ka-Band packaged
medium Power Amplifier. The TGA4903-SM
operates from 27-32 GHz and is designed using
TriQuint’s proven standard pHEMT production
process.
The TGA4903-SM typically provides 22 dBm of
output power at 1 dB gain compression, with small
signal gain of 15 dB.
The TGA4903-SM is ideally suited for VSAT
ground terminals, Point-to-Point Radios and Point-
to-Multipoint communications.
Evaluation Boards are available.
Lead-free and RoHS compliant.
Bias conditions: Vd = 5 V, Id = 170 mA, Vg = -0.6 V,
Typical
•Frequency Range: 27 - 32 GHz
•Psat: 24 dBm, P1dB: 22 dBm
•Gain: 15 dB
•Return Loss: 10 dB
•Bias: Vd = 5 V, Id = 170 mA, Vg = -0.6 V
Typical
•Package Dimensions: 4 x 4 x 0.85 mm
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TGA4903-SM
April 2012 © Rev A
TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com
Table II
Recommended Operating Conditions
Table I
Absolute Maximum Ratings 1/
Symbol Parameter Value Notes
Vd-Vg Drain to Gate Voltage 12 V
Vd Drain Voltage 8 V 2/
Vg1
Vg2
Gate #1 Voltage Range
Gate #2 Voltage Range
-5 to 0 V
-5 to 0 V
Id1
Id2
Drain #1 Current
Drain #2Current
352 mA
320 mA
2/
Ig1
Ig2
Gate #1 Current Range
Gate #2 Current Range
-0.9 to 16.5 mA
-0.8 to 15 mA
Pin Input Continuous Wave Power 18 dBm 2/
Tchannel Channel Temperature 200 °C
1/ These ratings represent the maximum operable values for this device. Stresses beyond those listed
under “Absolute Maximum Ratings” may cause permanent damage to the device and / or affect
device lifetime. These are stress ratings only, and functional operation of the device at these
conditions is not implied.
2/ Combinations of supply voltage, supply current, input power, and output power shall not exceed the
maximum power dissipation listed in Table IV.
Symbol Parameter 1/Value
Vd Drain Voltage 5 V
Id Drain Current 170 mA
Id_Drive Drain Current under RF Drive 300 mA
Vg Gate Voltage -0.6 V
1/ See Bias Procedures section for bias instructions.
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TGA4903-SM
April 2012 © Rev A
TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com
Table III
RF Characterization Table
SYMBOL PARAMETER TEST CONDITIONS MIN NOMINAL UNITS
Gain Small Signal Gain f = 27 GHz 13 16 dB
Gain Small Signal Gain f = 28-30 GHz 12 15 dB
Gain Small Signal Gain f = 31-32 GHz 11 14 dB
IRL Input Return Loss f = 27-32 GHz 10 dB
ORL Output Return Loss f = 27-32 GHz 10 dB
Psat Saturated Output
Power
f = 27-32 GHz 22 24 dBm
P1dB Output Power @ 1dB
Compression
f = 27-32 GHz 22 dBm
TOI Output TOI f = 27-32 GHz 27 dBm
NF Noise Figure f = 27-32 GHz 12 dB
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TGA4903-SM
April 2012 © Rev A
TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com
Table IV
Power Dissipation and Thermal Properties
Parameter Test Conditions Value Notes
Maximum Power Dissipation Tbaseplate = 70°C Pd = 2.0 W
Tchannel = 200 °C
Tm = 2.3 E4 Hrs
1/ 2/
Thermal Resistance, θjc Vd = 5 V
Id = 170 mA
Pd = 0.85 W
Tbaseplate = 70 °C
θjc = 65.2 °C/W
Tchannel = 125 °C
Tm = 9.13 E6 Hrs
Thermal Resistance, θjc
Under RF Drive
Vd = 5 V
Id = 300 mA
Pout = 24.5 dBm
Pd = 1.25 W
Tbaseplate = 70 °C
θjc = 65.2 °C/W
Tchannel = 151 °C
Tm = 8.92 E5 Hrs
Mounting Temperature 30 Seconds 320 °C
Storage Temperature -65 to 150 °C
1/ For a median life of 1E+6 hours, Power Dissipation is limited to
Pd(max) = (150 ºC – Tbase ºC)/θjc.
2/ Channel operating temperature will directly affect the device lifetime. For maximum life, it is
recommended that channel temperatures be maintained at the lowest possible levels.
Median Lifetime (Tm) vs. Channel Temperature
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TGA4903-SM
April 2012 © Rev A
Measured Data
Bias conditions: Vd = 5 V, Id = 170 mA, Vg = -0.6 V Typical
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TGA4903-SM
April 2012 © Rev A
TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com
Measured DataMeasured Data
Bias conditions: Vd = 5 V, Id = 170 mA, Vg = -0.6 V Typical
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TGA4903-SM
April 2012 © Rev A
Measured Data
Bias conditions: Vd = 5 V, Id = 170 mA, Vg = -0.6 V Typical
8
TGA4903-SM
April 2012 © Rev A
TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com
Measured Data
Bias conditions: Vd = 5 V, Id = 170 mA, Vg = -0.6 V Typical
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TGA4903-SM
April 2012 © Rev A
TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com
Electrical Schematic
Bias Procedures
Bias-up Procedure Bias-down Procedure
Connect Vg1 and Vg2 together. (“Vg”)
Connect Vd1 and Vd2 together. (“Vd”)
Turn off RF supply
Vg set to -1.5 V Reduce Vg to -1.5V. Ensure Id ~ 0 mA
Vd set to +5 V Turn Vd to 0 V
Adjust Vg more positive until Id is 170 mA. This will
be ~ Vg = -0.6 V
Turn Vg to 0 V
Apply RF signal to input
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TGA4903-SM
April 2012 © Rev A
TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com
Package Pinout Diagram
Pin Description
1, 2, 4, 5, 6, 10, 11, 12, 14,
15, 16, 20, 21
GND
8,18
NC
3
RF Input
7 Vg1
9
Vg2
13
RF Output
17
Vd2
19
Vd1
Bottom View
Top View
Dot indicates Pin 1
TGA
4903
Date Code
Lot Code
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TGA4903-SM
April 2012 © Rev A
TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com
GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should
be observed during handling, assembly and test.
Mechanical Drawing
Units: Millimeters
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TGA4903-SM
April 2012 © Rev A
TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com
GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should
be observed during handling, assembly and test.
Recommended Assembly Diagram
•C1: 0402 100pF cap
•C2: 0603 1uF cap
•R1: 0402 10 ohm resistor
•In / Out tuning stubs for gain & power
improvements
•Rogers RO4003C 8mil thick
with 0.5oz cladding
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TGA4903-SM
April 2012 © Rev A
TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com
GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should
be observed during handling, assembly and test.
Recommended Board Tuning for Maximum Output Power
NOTE: Ground vias located at sites A and B, above, and grounded
metal pads on PCB top metal, located under the package “GND” pads
(see page 10), are critical for RF performance
A
B
A
B
BB
A A
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TGA4903-SM
April 2012 © Rev A
TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com
GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should
be observed during handling, assembly and test.
Assembly Notes
Ordering Information
Recommended Surface Mount Package Assembly
•Proper ESD precautions must be followed while handling packages.
•Clean the board with alcohol. Allow the circuit to fully dry.
•TriQuint recommends using a conductive solder paste for attachment. Follow solder paste and reflow
oven vendors’ recommendations when developing a solder reflow profile. Typical solder reflow profiles
are listed in the table below.
•Hand soldering is not recommended. Solder paste can be applied using a stencil printer or dot
placement. The volume of solder paste depends on PCB and component layout and should be well
controlled to ensure consistent mechanical and electrical performance.
•Clean the assembly with alcohol.
Reflow Profile SnPb Pb Free
Ramp-up Rate 3 °C/sec 3 °C/sec
Activation Time and Temperature 60 – 120 sec @ 140 – 160 °C 60 – 180 sec @ 150 – 200 °C
Time above Melting Point 60 – 150 sec 60 – 150 sec
Max Peak Temperature 240 °C 260 °C
Time within 5 °C of Peak Temperature 10 – 20 sec 10 – 20 sec
Ramp-down Rate 4 – 6 °C/sec 4 – 6 °C/sec
Part Package Style
TGA4903-SM QFN 4x4 Surface Mount
