TOSHIBA TC7SO8F/FU TOSHIBA CMOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC TC7SO8F, TC7SO8FU 2-INPUT AND GATE The TC7S08 is a high speed C?MOS 2-INPUT AND GATE . . ne TC7S08F fabricated with silicon gate CMOS technology. 7508 It achieves high speed operation similar to equivalent LSTTL while maintaining the C27MOS low power dissipation. The internal circuit is composed of 2 stages including | buffer output, which enables high noise immunity and 4 stable output. Lk All inputs are equipped with protection circuits against > a static discharge or transient excess voltage. Output currents are 1/2 compared to TC74HC series models. SSOP5-P-0.95 TC7SO8FU FEATURES @ High Speed ................00 cee tod =7ns (Typ.) at cc=5Vv @ Low Power Dissipation ............ Icc = 1A (Max.) at Ta=25C @ High Noise Immunity ............. VNIH = YNIL =28% Vcc (Min.) Output Drive Capability ........... 5 LSTTL Loads SSOP5-P-0.65A Symmetrical Output Impedance ... |IOH|=!OL. Weight SSOP5-P-0.95 :0.016g (Typ.) =2mA (Min.) SSOP5-P-0.65A : 0.0069 (Typ.) Balanced Propagation Delays ...... toLH=tpHL Wide Operating Voltage Range ... Vcc (opr) =2~6V MAXIMUM RATINGS MARKING CHARACTERISTIC SYMBOL RATING UNIT Type Name Supply Voltage Range Vec -0.5~7 Vv 4 DC Input Voltage VIN -0.5~Vcc +0.5 V E? DC Output Voltage VOUT -0.5~Vcc +05} V Hew Input Diode Current iK +20 mA Output Diode Current lox +20 mA PIN ASSIGNMENT (TOP VIEW) DC Output Current lOUT +12.5 mA IN B ed vec DC Vcc/ Ground Current Icc +25 mA Power Dissipation Pp 200 mw INA Storage Temperature Tstg -65~150 C Lead Temperature (10s) TL 260 C GND Te] out y 961001EBA2 @ TOSHIBA is continually working to improve the quality and the reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to observe standards of safety, and to avoid situations in which a malfunction or failure of a TOSHIBA product could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent products specifications. Also, please keep in mind the precautions and conditions set forth in the TOSHIBA Semiconductor Reliability Handbook. 1997-04-07 1/5TOSHIBA TC7SO8F/FU LOGIC DIAGRAM 1 IN pH (4) IN A OUT Y RECOMMENDED OPERATING CONDITIONS CHARACTERISTIC SYMBOL RATING UNIT Supply Voltage Vcc 2~6 Vv Input Voltage VIN 0~Vec Vv Output Voltage VOUT O~Vec Vv Operating Temperature Topr -40~85 C 0~1000 (Vcc =2.0V) Input Rise and Fall Time tr, tf O~ 500 (Vcc =4.5V)] ns O~ 400 (Vcc =6.0V) DC ELECTRICAL CHARACTERISTICS CHARACTERISTIC | SYMBOL TEST CONDITION Ta = 25C Ta = ~40~85C UNIT Vcc | MIN. | TYP. |MAX.| MIN. | MAX. Hiah-L | 2.0 1.5) _ 1.5 _ | 9 volt Vin 45/3.15/ | | 315] | v npur wonage 6.0 | 42] | |] 42] L Level 2.0) 05; 0.5 ewut Volt VIL 45} | ] 135} | 135] v npur vonage 60} | | 18] 1.8 2.0 1.9} 2.0) 1.9 . IOH= 20uA 4.5 44) 45} 4.4 _ urpur Voltage lon=-2mA | 4.5 [4.18] 431| | 413 | IOH = -2.6mA 6.0 | 5.68 | 5.80} 5.63 _ 2.0) 0.0 0.1 0.1 lo = 20uA 45| | 00] o1] 0.1 ee Vo. |VIN=VIH 60 | | oo] o1f | on] y Output Voltage or VIL lol =2mA 45 | |0.17|026/ | 033 lol =2.6mA 6.0 | |0.18| 0.26] | 0.33 Input Leakage = + + Current liN VIN=Vec or GND 6.0 +0.1 +1.0 5 Quiescent B I Vin=gV ND . _ 1. _ 10. Supply Current cc IN=Vcc oF G 6.0 0.0 Output currents are 1/2 compared to TC74HC series models. 961001EBA2 @ The products described in this document are subject to foreign exchange and foreign trade control laws. @ The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. @ the information contained herein is subject to change without notice. 1997-04-07 2/5TOSHIBA TC7SO8F/FU AC ELECTRICAL CHARACTERISTICS (C; = 15pF, Input tp =t=6ns, Vcc =5V) Ta =25 CHARACTERISTIC SYMBOL TEST CONDITION a oc UNIT MIN. | TYP. |[MAX. Output Transition tTLH _ _ 5 10 ns Time tTHL Propagation Delay toLH _ _ 7 15 ns Time tpHL AC ELECTRICAL CHARACTERISTICS (C; =50pF, Input ty = tf =6ns) CHARACTERISTIC | SYMBOL TEST CONDITION Ta = 25C Ta = ~40~85C UNIT Vcc | MIN. | TYP. [MAX.| MIN. | MAX. Output T iti t 2.0 _ 50 125 _ 155 Cutpu ransition att 45} 14 25 _ 31 ns ime THL 60; | 12] 21} 26 Propaaation Dela 2.0) 48 | 100 125 Tie gatio y heh a5} | 12] 20] 25 | ns ime PHL 60/ | 9] a7] 21 Input Capacitance CIN 5 10 10 Power Dissipation pF . N 1 10 Capacitance CPD (Note 1) Note 1: Cpp defined as the value of internal equivalent capacitance of IC which is calculated from the operating current consumption without load (refer to Test Circuit). Average operating current can be obtained by the equation hereunder. ICC (opr) = CPD'Vcc fin + lec SWITCHING CHARACTERISTICS TEST CIRCUIT VIN VOUT ns 6ns, Veg 90% N 50% F 10% GND tTLH tTHL Vv 90% OH 50% 10% \ VoL tpLH tpHL ICC (opr) TEST CIRCUIT Input waveform is the same as that in case of switching characteristics test. 1997-04-07 3/5TOSHIBA TC7SO8F/FU OUTLINE DRAWING SSOP5-P-0.95 Unit : mm be 2.9+0.2 1.940,2 0.95 0.95 i 0.4+0.1 a | Nw O~0.1 Weight : 0.016g (Typ.) 1997-04-07 4/5TOSHIBA TC7SO8F/FU OUTLINE DRAWING SSOP5-P-0.65A Unit : mm 2.1+0.1 1.25+0.1 ww) c a 19 TT a 1-3 14? Ga S eT +1) ti | --2-E Cs -y_ 3-EE . v . Ep 4 ~~ S Kg ~o LT -_ I oO ry iw + ar Oo? _ Oy - d Weight : 0.006g (Typ.) 1997-04-07 5/5