HSU227 Silicon Schottky Barrier Diode for High Speed Switching REJ03G0612-0200 (Previous: ADE-208-779A) Rev.2.00 Apr 28, 2005 Features * Low capacitance. (C = 3.0 pF max) * Ultra small Resin Package (URP) is suitable for high density surface mounting and high speed assembly. Ordering Information Type No. Laser Mark Package Name HSU227 S3 URP Pin Arrangement Cathode mark Mark 1 S3 2 1. Cathode 2. Anode Rev.2.00 Apr 28, 2005 page 1 of 4 Package Code (Previous Code) PTSP0002ZA-A (URP) HSU227 Absolute Maximum Ratings (Ta = 25C) Item Repetitive peak reverse voltage Average rectified current Non-Repetitive peak forward surge current Junction temperature Storage temperature Tj Tstg Note: Symbol VRRM Value 25 Unit V IO 1 IFSM * 50 200 mA mA 125 -55 to +125 C C 1. 10 ms sine wave 1 pulse. Electrical Characteristics (Ta = 25C) Item Forward voltage Symbol VF Reverse current Capacitance IR C Rev.2.00 Apr 28, 2005 page 2 of 4 Min -- Typ 0.29 Max 0.35 Unit V -- -- 0.3 2.45 2.0 3.00 A pF Test Condition IF = 1 mA VR = 20 V VR = 1 V, f = 1 MHz HSU227 Main Characteristic 10-4 1.0 Pulse test Pulse test Reverse current IR (A) Forward current IF (A) 10-1 10-2 10-3 10-4 10 10-6 10-7 -5 10-6 0 0.1 0.2 0.4 0.3 0.5 0.6 10-8 0 5 10 15 20 25 Forward voltage VF (V) Reverse voltage VR (V) Fig.1 Forward current vs. Forward voltage Fig.2 Reverse current vs. Reverse voltage 10 f=1MHz Capacitance C (pF) 10-5 1.0 0.1 1.0 10 40 Reverse voltage VR (V) Fig.3 Capacitance vs. Reverse voltage Rev.2.00 Apr 28, 2005 page 3 of 4 HSU227 Package Dimensions JEITA Package Code RENESAS Code Previous Code MASS[Typ.] SC-76A PTSP0002ZA-A URP / URPV 0.004g D b E HE l1 e1 A2 A1 Symbol l1 b2 Pattern of terminal position areas Rev.2.00 Apr 28, 2005 page 4 of 4 Reference A1 A2 b D E HE b2 e1 l1 Dimension in Millimeters Min 0 0.75 0.15 1.10 1.55 2.35 - Nom 0.90 0.30 1.25 1.70 2.50 0.80 2.30 0.80 Max 0.1 1.05 0.45 1.40 1.85 2.65 - Sales Strategic Planning Div. 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