Rev.2.00 Apr 28, 2005 page 1 of 4
HSU227
Silicon Schottky Barrier Diode for High Speed Switching
REJ03G0612-0200
(Previous: ADE-208-779A)
Rev.2.00
Apr 28, 2005
Features
• Low capacitance. (C = 3.0 pF max)
• Ultra small Resin Package (URP) is suitable for high density surface mounting and high speed assembly.
Ordering Information
Type No.
Laser Mark
Package Name
Package Code
(Previous Code)
HSU227 S3 URP PTSP0002ZA-A
(URP)
Pin Arrangement
Cathode mark
Mark
12
S3
1. Cathode
2. Anode
HSU227
Rev.2.00 Apr 28, 2005 page 2 of 4
Absolute Maximum Ratings
(Ta = 25°C)
Item Symbol Value Unit
Repetitive peak reverse voltage VRRM 25 V
Average rectified current IO 50 mA
Non-Repetitive peak forward surge current IFSM *1 200 mA
Junction temperature Tj 125 °C
Storage temperature Tstg −55 to +125 °C
Note: 1. 10 ms sine wave 1 pulse.
Electrical Characteristics
(Ta = 25°C)
Item Symbol Min Typ Max Unit Test Condition
Forward voltage VF — 0.29 0.35 V IF = 1 mA
Reverse current IR — 0.3 2.0 µA VR = 20 V
Capacitance C — 2.45 3.00 pF VR = 1 V, f = 1 MHz
HSU227
Rev.2.00 Apr 28, 2005 page 3 of 4
Main Characteristic
0
101.0 40
510152025
0.2 0.4 0.60.1 0.5
0.3
Pulse test
10
–3
10
–4
10
–2
10
–5
10
–1
10
–6
1.0
Fig.1 Forward current vs. Forward voltage
Forward voltage V
F
(V)
Forward current I
F
(A)
0
Reverse voltage V
R
(V)
Fig.2 Reverse current vs. Reverse voltage
Reverse current I
R
(A)
10
–8
10
–7
10
–6
10
–5
10
–4
10
1.0
0.1
f=1MHz
Fig.3 Capacitance vs. Reverse voltage
Reverse voltage V
R
(V)
Capacitance C (pF)
Pulse test
HSU227
Rev.2.00 Apr 28, 2005 page 4 of 4
Package Dimensions
b
D
EHE
A1
A2
b2
l1
l1
e1
Pattern of terminal position areas
0-0.1
A
1
0.75 0.90 1.05
A
2
0.15 0.30 0.45
1.10 1.25 1.40
b
1.55 1.70 1.85
2.35 2.65
-0.80
2.50 -
-2.30-
D
-0.80-
E
H
E
b
2
e
1
l
1
Dimension in Millimeters
Min Nom Max
Reference
Symbol
SC-76A 0.004g
MASS[Typ.]
URP / URPVPTSP0002ZA-A
RENESAS CodeJEITA Package Code Previous Code
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