OPTEK Technology Inc. — 1645 Wallace Drive, Carrollton, Texas 75006
Phone: (972) 323-2200 or (800) 341-4747 FAX: (972) 323-2396 sensors@optekinc.com www.optekinc.com
Issue A.4 1/07
Page 1 of 2
Infrared Light Emitting Diode
OPR2800, OPR2800T
OPTEK reserves the right to make changes at any time in order to improve design and to supply the best product possible.
Description:
The OPR2800 is a GaAIAs infrared LED mounted in a surface mount chip carrier (SMCC) package with a flat lens
window that allows a wide beam angle. The SMCC format has a lower height profile than the PLCC-2 package
and mounts in the same footprint. The device is suitable for use in single device or array applications. The
OPR2800 is spectrally matched to the OPR5500 phototransistor.
Features:
• High-power GaAIAs
• Matches PLCC-2 footprint
• 880 nm wavelength
• Wide beam angle
• Wide operating temperature range (-40o C to +100o C)
Pin # LED
1 Anode
2 Cathode
Applications:
• Non-contact position sensing
• Datum detection
RoHS
Ordering Information
Part
Number LED Peak
Wavelength Total
Beam Angle
Packaging
OPR2800 880 nm 100° Waffle Pack
OPR2800T Tape & Reel
2
1
• Machine automation
• Optical encoding
Anode Indicator
Infrared Light Emitting Diode
OPR2800, OPR2800T
OPTEK Technology Inc. — 1645 Wallace Drive, Carrollton, Texas 75006
Phone: (972) 323-2200 or (800) 341-4747 FAX: (972) 323-2396 sensors@optekinc.com www.optekinc.com
Issue A.4 1/07
Page 2 of 2
OPTEK reserves the right to make changes at any time in order to improve design and to supply the best product possible.
Electrical Characteristics (TA = 25° C unless otherwise noted)
SYMBOL PARAMETER MIN TYP MAX UNITS TEST CONDITIONS
EE (APT) Apertured Radiant Incidence 0.2 - - mW/cm2 I
F = 20 mA(3)
VF Forward Voltage - - 1.50 V IF = 50 mA
IR Reverse Current - - 100 µA VR= 2.0 V
λP Wavelength at Peak Emission 890 - nm IF = 10 mA
θHP Emission Angle at Half Power Points - 100 - Degree IF = 20 mA
tr Output Rise Time, Output Fall Time - - 500 ns
tf Output Rise Time, Output Fall Time - - 500 ps
IF(PK) = 100 mA, PW = 10 µs,
D.C. = 10.0%
Notes:
1. Solder time less than 5 seconds at temperature extreme.
2. Derate linearly at 1.73 mW/° C above 25° C.
3. EE(APT) is a measurement of the apertured radiant incidence upon a sensing area 0.081” (2.06 mm) in diameter, perpendicular to and
centered on the mechanical axis of the lens and 0.590” (14.99 mm) from the measurement surface. EE(APT) is not necessarily uniform
within the measured area.
Absolute Maximum Ratings (TA = 25° C unless otherwise noted)
Storage Temperature Range -40o C to +100o C
Operating Temperature Range -40o C to +100o C
Reverse Voltage 30 V
Continuous Forward Current 50 mA
Solder reflow time within 5°C of peak temperature is 20 to 40 seconds(1) 250° C
Power Dissipation 130 mW(2)
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
0 102030405060708090100
Forward Current IF (mA)
Normalized Optical Power
-60° C
-40° C
-20° C
0° C
20° C
40° C
60° C
80° C
100° C
120° C
Normalized at 50 mA and 20° C
Optical Power vs IF vs
Temperature
0.9
1.0
1.1
1.2
1.3
1.4
1.5
1.6
1.7
1.8
0 102030405060708090100
Forward Current (mA)
Typical Forward Voltage (V)
-60° C
-40° C
-20° C
0° C
20° C
40° C
60° C
80° C
100° C
120°C
Forward Voltage vs For ward Current
vs Temperature
OP2800
