< IGBT MODULES > CM1000DXL-24S HIGH POWER SWITCHING USE INSULATED TYPE Collector current I C .......................................... 9 0 0 A* Collector-emitter voltage V CES ......................... 1 2 0 0 V Maximum junction temperature T j m a x .............. 1 7 5 C Flat base Type Copper base plate (non-plating) Tin plating pin terminals RoHS Directive compliant Dual switch (Half-Bridge) Recognized under UL1557, File E323585 APPLICATION AC Motor Control, Motion/Servo Control, Power supply, etc. OUTLINE DRAWING & INTERNAL CONNECTION TERMINAL Dimension in mm SECTION A INTERNAL CONNECTION Tolerance otherwise specified Division of Dimension Es1 G1 TH2 TH1 Cs1 (62) (61) (57) (56) (52) Tolerance 0.5 to 3 0.2 over 3 to 6 0.3 over 6 to 30 0.5 over 30 to 120 0.8 over 120 to 400 1.2 C1 (1) Es2 G2 Cs2 (47) (46) (42) Th NTC C1 (2) The tolerance of size between terminals is assumed to be 0.4. t=0.8 E2 (3) E2 (4) Publication Date : December 2013 1 Tr1 Di1 Tr2 Di2 C1E2 (33) C1E2 (32) < IGBT MODULES > CM1000DXL-24S HIGH POWER SWITCHING USE INSULATED TYPE MAXIMUM RATINGS (Tj=25 C, unless otherwise specified) INVERTER PART IGBT/DIODE Symbol Item VCES Collector-emitter voltage VGES Gate-emitter voltage IC Conditions ICRM Total power dissipation (Note1) IEM (Note1) IERM (Note1) 20 V (Note2, 4) 900 * (Note3) 2000 TC=25 C DC (Note2, 4) 7500 (Note2) W 900 * (Note2) Emitter current A 1000 Pulse, Repetitive IE V (Note2) Collector current Ptot Unit 1200 C-E short-circuited DC, TC=124 C ICM Rating G-E short-circuited A 1000 Pulse, Repetitive (Note3) 2000 MODULE Symbol Rating Unit Isolation voltage Terminals to base plate, RMS, f=60 Hz, AC 1 min 2500 V Tjmax Maximum junction temperature Instantaneous event (overload) 175 TCmax Maximum case temperature (Note4) 125 Tjop Operating junction temperature Continuous operation (under switching) -40 ~ +150 Tstg Storage temperature - -40 ~ +125 Visol Item Conditions C C ELECTRICAL CHARACTERISTICS (T j =25 C, unless otherwise specified) INVERTER PART IGBT/DIODE Symbol Item Limits Conditions Min. Typ. Max. Unit ICES Collector-emitter cut-off current VCE=VCES, G-E short-circuited - - 1.0 mA IGES Gate-emitter leakage current VGE=VGES, C-E short-circuited - - 0.5 A VGE(th) Gate-emitter threshold voltage IC=100 mA, VCE=10 V V VCEsat (Terminal) Collector-emitter saturation voltage VCEsat (Chip) Cies Input capacitance Coes Output capacitance Cres Reverse transfer capacitance QG Gate charge td(on) Turn-on delay time tr Rise time td(off) Turn-off delay time tf Fall time VEC (Note1) (Terminal) Emitter-collector voltage VEC 5.4 6.0 6.6 T j =25 C - 1.85 2.30 Refer to the figure of test circuit T j =125 C - 2.05 - (Note5) T j =150 C - 2.10 - IC=1000 A, VGE=15 V, (Note1) (Chip) IC=1000 A, T j =25 C - 1.70 2.15 VGE=15 V, T j =125 C - 1.90 - (Note5) T j =150 C - 1.95 - - - 100 VCE=10 V, G-E short-circuited VCC=600 V, IC=1000 A, VGE=15 V VCC=600 V, IC=1000 A, VGE=15 V, RG=0 , Inductive load - - 20 - - 1.7 - 2300 - - - 800 - - 200 - - 600 - - 300 IE=1000 A, G-E short-circuited, T j =25 C - 1.85 2.30 Refer to the figure of test circuit T j =125 C - 1.85 - (Note5) T j =150 C - 1.85 - T j =25 C - 1.70 2.15 G-E short-circuited, T j =125 C - 1.70 - (Note5) T j =150 C - 1.70 - IE=1000 A, V V nF nC ns V V trr (Note1) Reverse recovery time VCC=600 V, IE=1000 A, VGE=15 V, - - 300 ns Qrr (Note1) Reverse recovery charge RG=0 , Inductive load - 53.3 - C Publication Date : December 2013 2 < IGBT MODULES > CM1000DXL-24S HIGH POWER SWITCHING USE INSULATED TYPE ELECTRICAL CHARACTERISTICS (cont.; T j =25 C, unless otherwise specified) INVERTER PART IGBT/DIODE Symbol Item Limits Conditions Min. Typ. Max. Unit Eon Turn-on switching energy per pulse VCC=600 V, IC=IE=1000 A, - 45.6 - Eoff Turn-off switching energy per pulse VGE=15 V, RG=0 , T j =150 C, - 97.1 - Reverse recovery energy per pulse Inductive load - 96.7 - mJ - - 0.5 m - 2.0 - (Note1) Err R CC'+EE' Internal lead resistance rg Internal gate resistance Main terminals-chip, per switch, TC=25 C (Note4) Per switch mJ NTC THERMISTOR PART Symbol Item Limits Conditions (Note4) R25 Zero-power resistance TC=25 C R/R Deviation of resistance R100=493 , TC=100 C (Note4) B(25/50) B-constant Approximate by equation P25 Power dissipation TC=25 C (Note6) (Note4) Max. Unit Min. Typ. 4.85 5.00 5.15 k -7.3 - +7.8 % - 3375 - K - - 10 mW THERMAL RESISTANCE CHARACTERISTICS Symbol Rth(j-c)Q Rth(j-c)D Rth(c-s) Item Thermal resistance Contact thermal resistance Limits Conditions Junction to case, per Inverter IGBT Junction to case, per Inverter DIODE (Note4) (Note4) Case to heat sink, per 1 module, Thermal grease applied (Note4, 7) Unit Min. Typ. Max. - - 20 K/kW - - 38 K/kW - 7 - K/kW MECHANICAL CHARACTERISTICS Symbol Mt Ms Item Mounting torque m mass ds Creepage distance da Clearance ec Flatness of base plate Limits Conditions Min. Typ. Max. Unit Main terminals M 6 screw 3.5 4.0 4.5 N*m Mounting to heat sink M 5 screw 2.5 3.0 3.5 N*m - 690 - g Terminal to terminal 13.69 - - Terminal to base plate 15.7 - - Terminal to terminal 13.69 - - Terminal to base plate 14.88 - - 0 - +100 On the centerline X, Y (Note8) mm mm m Note1. Represent ratings and characteristics of the anti-parallel, emitter-collector free wheeling diode (DIODE). 2. Junction temperature (T j ) should not increase beyond T j m a x rating. 3. Pulse width and repetition rate should be such that the device junction temperature (T j ) dose not exceed T j m a x rating. 4. Case temperature (TC) and heat sink temperature (T s ) are defined on the each surface (mounting side) of base plate and heat sink just under the chips. Refer to the figure of chip location. 5. Pulse width and repetition rate should be such as to cause negligible temperature rise. R 1 1 6. B ( 25 / 50) ln( 25 ) /( ) R 50 T25 T50 R25: resistance at absolute temperature T25 [K]; T25=25 [C]+273.15=298.15 [K] R50: resistance at absolute temperature T50 [K]; T50=50 [C]+273.15=323.15 [K] 7. Typical value is measured by using thermally conductive grease of =0.9 W/(m*K). Publication Date : December 2013 3 < IGBT MODULES > CM1000DXL-24S HIGH POWER SWITCHING USE INSULATED TYPE +: Convex -: Concave Note8. Base plate (mounting side) flatness measurement points (X, Y) are as follows of the following figure. X Y mounting side -: Concave mounting side Label side mounting side +: Convex 9. Use the following screws when mounting the printed circuit board (PCB) on the stand offs. "2.6x10 or 2.6x12 B1 tapping screw" The length of the screw depends on thickness (t1.6~t2.0) of the PCB. *: DC current rating is limited by power terminals. RECOMMENDED OPERATING CONDITIONS Symbol Item Conditions VCC (DC) Supply voltage Applied across C1-E2 VGEon Gate (-emitter drive) voltage Applied across G1-Es1/G2-Es2 RG External gate resistance Per switch CHIP LOCATION (Top view) Limits Min. Typ. Max. Unit - 600 850 V 13.5 15.0 16.5 V 0 - 5.1 Dimension in mm, tolerance: 1 mm Tr1/Tr2: IGBT, Di1/Di2: DIODE, Th: NTC thermistor Publication Date : December 2013 4 < IGBT MODULES > CM1000DXL-24S HIGH POWER SWITCHING USE INSULATED TYPE TEST CIRCUIT AND WAVEFORMS 1,2 1,2 52 Shortcircuited VGE=15V IC 61 62 42 VGE=15V 46 3,4 Tr1 62 V 32,33 42 32,33 Shortcircuited 46 3,4 47 42 IE 46 3,4 47 Tr2 52 61 62 Shortcircuited IC 46 47 IE V 32,33 42 Shortcircuited Shortcircuited 61 V 32,33 1,2 52 Shortcircuited 61 62 V 1,2 52 3,4 47 Di1 Di2 V C E s a t test circuit VEC test circuit vGE 52 0V +VGE 0 + 32,33 VCC iE t 90 % t 42 vGE -VGE trr 0A Irr RG 0 0.5xI r r 46 iC 10% 0A 47 tr td(on) 3,4 tf td(off) t Switching characteristics test circuit and waveforms t r r , Q r r test waveform iE vCE Q r r =0.5xI r r xt r r IE iC 62 vCE 90 % Load 61 -VGE iE 1,2 iC iC ICM VCC ICM VCC IEM vEC vCE t 0A 0 0.1xICM 0.1xVCC t 0 0.1xVCC 0.02xICM ti ti IGBT Turn-on switching energy IGBT Turn-off switching energy t VCC 0V t ti FWDi Reverse recovery energy Turn-on / Turn-off switching energy and Reverse recovery energy test waveforms (Integral time instruction drawing) Publication Date : December 2013 5 < IGBT MODULES > CM1000DXL-24S HIGH POWER SWITCHING USE INSULATED TYPE PERFORMANCE CURVES INVERTER PART COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) OUTPUT CHARACTERISTICS (TYPICAL) T j =25 C VGE=15 V (Chip) (Chip) 3.5 2000 VGE=20 V 13.5 V 1800 12 V 15 V (V) COLLECTOR-EMITTER SATURATION VOLTAGE VCEsat 1400 IC (A) 1600 COLLECTOR CURRENT T j =150 C 3.0 11 V 1200 1000 800 10 V 600 9V 400 T j =125 C 2.5 2.0 T j =25 C 1.5 1.0 0.5 200 0.0 0 0 2 4 6 8 COLLECTOR-EMITTER VOLTAGE 0 10 VCE 200 (V) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) T j =25 C 800 1000 1200 1400 IC 1600 1800 2000 (A) G-E short-circuited (Chip) (Chip) 10000 T j =125 C IC=2000 A 8 1000 IE (A) IC=1000 A 6 EMITTER CURRENT (V) 600 FREE WHEELING DIODE FORWARD CHARACTERISTICS (TYPICAL) 10 COLLECTOR-EMITTER SATURATION VOLTAGE VCEsat 400 COLLECTOR CURRENT IC=400 A 4 T j =150 C 100 2 T j =25 C 0 10 6 8 10 12 14 GATE-EMITTER VOLTAGE 16 VGE 18 20 0.0 (V) 0.5 1.0 1.5 2.0 EMITTER-COLLECTOR VOLTAGE Publication Date : December 2013 6 3.0 2.5 VEC (V) < IGBT MODULES > CM1000DXL-24S HIGH POWER SWITCHING USE INSULATED TYPE PERFORMANCE CURVES INVERTER PART HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) VCC=600 V, VGE=15 V, RG=0 , INDUCTIVE LOAD ---------------: T j =150 C, - - - - -: T j =125 C HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) VCC=600 V, IC=1000 A, VGE=15 V, INDUCTIVE LOAD ---------------: T j =150 C, - - - - -: T j =125 C 1000 1000 10000 td(off) td(off) 1000 tr 10 td(on) tr 10 100 COLLECTOR CURRENT 1000 0.1 IC (A) 1 EXTERNAL GATE RESISTANCE HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) VCC=600 V, VGE=15 V, RG=0 , INDUCTIVE LOAD, PER PULSE ---------------: T j =150 C, - - - - -: T j =125 C 100 100 10 RG () HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) VCC=600 V, IC/IE=1000 A, VGE=15 V, INDUCTIVE LOAD, PER PULSE ---------------: T j =150 C, - - - - -: T j =125 C 100 1000 Eon (mJ) SWITCHING ENERGY Eon, Eoff Err Eoff 10 Eon 1 (mJ) 10000 100 1000 Eoff 10 100 Err 1 10 100 1000 0.1 COLLECTOR CURRENT IC (A) EMITTER CURRENT IE (A) 1 EXTERNAL GATE RESISTANCE Publication Date : December 2013 7 10 100 10 RG () REVERSE RECOVERY ENERGY Err 10 SWITCHING ENERGY (mJ) REVERSE RECOVERY ENERGY (mJ) SWITCHING TIME td(on), tr tf 100 WITCHING TIME 100 td(off), tf (ns) tf (ns) SWITCHING TIME (ns) td(on) < IGBT MODULES > CM1000DXL-24S HIGH POWER SWITCHING USE INSULATED TYPE PERFORMANCE CURVES INVERTER PART FREE WHEELING DIODE REVERSE RECOVERY CHARACTERISTICS (TYPICAL) VCC=600 V, VGE=15 V, RG=0 , INDUCTIVE LOAD ---------------: T j =150 C, - - - - -: T j =125 C CAPACITANCE CHARACTERISTICS (TYPICAL) G-E short-circuited, T j =25 C 1000 1000 Irr Cies (ns), I r r CAPACITANCE 10 Cres 0.1 10 0.1 1 10 COLLECTOR-EMITTER VOLTAGE 100 VCE 10 (V) 1000 IE (A) GATE CHARGE CHARACTERISTICS (TYPICAL) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (MAXIMUM) VCC=600 V, IC=1000 A, T j =25 C Single pulse, TC=25C R t h ( j - c ) Q =20 K/kW, R t h ( j - c ) D =38 K/kW Zth(j-c) NORMALIZED TRANSIENT THERMAL IMPEDANCE VGE 15 10 5 0 0 100 EMITTER CURRENT 20 (V) 100 trr Coes 1 GATE-EMITTER VOLTAGE trr (A) (nF) 100 500 1000 1500 GATE CHARGE 2000 QG 2500 3000 3500 (nC) 1 0.1 0.01 0.001 0.00001 0.0001 0.001 0.01 TIME Publication Date : December 2013 8 (S) 0.1 1 10 < IGBT MODULES > CM1000DXL-24S HIGH POWER SWITCHING USE INSULATED TYPE PERFORMANCE CURVES NTC thermistor part TEMPERATURE CHARACTERISTICS (TYPICAL) 10 RESISTANCE R (k) 100 1 0.1 -50 -25 0 25 TEMPERATURE 50 T 75 100 125 (C) Publication Date : December 2013 9 < IGBT MODULES > CM1000DXL-24S HIGH POWER SWITCHING USE INSULATED TYPE Keep safety first in your circuit designs! Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of non-flammable material or (iii) prevention against any malfunction or mishap. Notes regarding these materials *These materials are intended as a reference to assist our customers in the selection of the Mitsubishi semiconductor product best suited to the customer's application; they do not convey any license under any intellectual property rights, or any other rights, belonging to Mitsubishi Electric Corporation or a third party. *Mitsubishi Electric Corporation assumes no responsibility for any damage, or infringement of any third-party's rights, originating in the use of any product data, diagrams, charts, programs, algorithms, or circuit application examples contained in these materials. *All information contained in these materials, including product data, diagrams, charts, programs and algorithms represents information on products at the time of publication of these materials, and are subject to change by Mitsubishi Electric Corporation without notice due to product improvements or other reasons. It is therefore recommended that customers contact Mitsubishi Electric Corporation or an authorized Mitsubishi Semiconductor product distributor for the latest product information before purchasing a product listed herein. The information described here may contain technical inaccuracies or typographical errors. Mitsubishi Electric Corporation assumes no responsibility for any damage, liability, or other loss rising from these inaccuracies or errors. Please also pay attention to information published by Mitsubishi Electric Corporation by various means, including the Mitsubishi Semiconductor home page (www.MitsubishiElectric.com/semiconductors/). *When using any or all of the information contained in these materials, including product data, diagrams, charts, programs, and algorithms, please be sure to evaluate all information as a total system before making a final decision on the applicability of the information and products. Mitsubishi Electric Corporation assumes no responsibility for any damage, liability or other loss resulting from the information containedherein. *Mitsubishi Electric Corporation semiconductors are not designed or manufactured for use in a device or system that is used under circumstances in which human life is potentially at stake. Please contact Mitsubishi Electric Corporation or an authorized Mitsubishi Semiconductor product distributor when considering the use of a product contained herein for any specific purposes, such as apparatus or systems for transportation, vehicular, medical, aerospace, nuclear, or undersea repeater use. *The prior written approval of Mitsubishi Electric Corporation is necessary to reprint or reproduce in whole or in part these materials. *If these products or technologies are subject to the Japanese export control restrictions, they must be exported under a license from the Japanese government and cannot be imported into a country other than the approved destination. Any diversion or reexport contrary to the export control laws and regulations of Japan and/or the country of destination is prohibited. *Please contact Mitsubishi Electric Corporation or an authorized Mitsubishi Semiconductor product distributor for further details on these materials or the products contained therein. (c) 2013 MITSUBISHI ELECTRIC CORPORATION. ALL RIGHTS RESERVED. Publication Date : December 2013 10