MSE1PB-M3/89A - Vishay Presicion Group

MSE1PB thru MSE1PJ

www.vishay.com Vishay General Semiconductor

Revision: 24-May-12 1Document Number: 89067

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Surface Mount ESD Capability Rectifier

TYPICAL APPLICATIONS

General purpose, polarity protection, and rail-to-rail

protection in both consumer and automotive applications.

FEATURES

• Very low profile - typical height of 0.65 mm

• Ideal for automated placement

• Oxide planar chip junction

• Low forward voltage drop, low leakage

current

• ESD capability

• Meets MSL level 1, per J-STD-020,

LF maximum peak of 260 °C

• AEC-Q101 qualified

• Material categorization: For definitions of compliance

please see www.vishay.com/doc?99912

MECHANICAL DATA

Case: MicroSMP

Molding compound meets UL 94 V-0 flammability rating

Base P/N-M3 - halogen-free, RoHS compliant, and

commercial grade

Base P/NHM3 - halogen-free, RoHS compliant, and

automotive grade

Terminals: Matte tin plated leads, solderable per

J-STD-002 and JESD 22-B102

M3 suffix meets JESD 201 class 1A whisker test, HM3 suffix

meets JESD 201 class 2 whisker test

Polarity: Color band denotes the cathode end

Notes

(1) Pulse test: 300 μs pulse width, 1 % duty cycle

(2) Pulse test: Pulse width  40 ms

PRIMARY CHARACTERISTICS

IF(AV) 1.0 A

VRRM 100 V, 200 V, 400 V, 600 V

IFSM 20 A

VF at IF = 1.0 A 0.925 V

IR1 μA

TJ max. 175 °C

MicroSMP

eSMP

Series

Top View Bottom View

MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)

PARAMETER SYMBOL MSE1PB MSE1PD MSE1PG MSE1PJ UNIT

Device marking code SB SD SG SJ

Maximum repetitive peak reverse voltage VRRM 100 200 400 600 V

Maximum average forward rectified current (fig. 1) IF(AV) 1.0 A

Peak forward surge current 10 ms single half

sine-wave superimposed on rated load IFSM 20 A

Operating junction and storage temperature range TJ, TSTG - 55 to + 175 °C

ELECTRICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)

PARAMETER TEST CONDITIONS SYMBOL TYP. MAX. UNIT

Maximum instantaneous forward voltage

IF = 0.5 A TA = 25 °C

VF (1)

0.940 -

IF = 1.0 A 1.016 1.1

IF = 0.5 A TA = 125 °C 0.834 -

IF = 1.0 A 0.925 0.98

Maximum reverse current Rated VR

TA = 25 °C IR (2) -1.0

μA

TA = 125 °C 3.7 50

Typical reverse recovery time IF = 0.5 A, IR = 1.0 A, Irr = 0.25 A trr 780 - ns

Typical junction capacitance 4.0 V, 1 MHz CJ5-pF

MSE1PB thru MSE1PJ

www.vishay.com Vishay General Semiconductor

Revision: 24-May-12 2Document Number: 89067

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Note

(1) Thermal resistance from junction to ambient and junction to lead mounted on PCB with 6.0 mm x 6.0 mm copper pad areas. RJL is measured

at the terminal of cathode band.

Notes

(1) Immunity to IEC 61000-4-2 air discharge mode has a typical performance > 30 kV

(2) System ESD standard

Note

(1) Automotive grade

RATINGS AND CHARACTERISTICS CURVES

(TA = 25 °C unless otherwise noted)

Fig. 1 - Forward Current Derating Curve Fig. 2 - Forward Power Loss Characteristics

THERMAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)

PARAMETER SYMBOL MSE1PB MSE1PD MSE1PG MSE1PJ UNIT

Typical thermal resistance

RJA (1) 110

°C/WRJL (1) 30

RJC (1) 40

IMMUNITY TO ELECTRICAL STATIC DISCHARGE TO THE FOLLOWING STANDARDS

(TA = 25 °C, unless otherwise noted)

STANDARD TEST TYPE TEST CONDITIONS SYMBOL CLASS VALUE

AEC-Q101-001 Human body model (contact mode) C = 100 pF, R = 1.5 k

H3B > 8 kV

AEC-Q101-002 Machine model (contact mode) C = 200 pF, R = 0 M4 > 400 V

JESD22-A114 Human body model (contact mode) C = 150 pF, R = 1.5 k3B > 8 kV

JESD22-A115 Machine model (contact mode) C = 200 pF, R = 0 C > 400 V

IEC 61000-4-2 (2) Human body model (contact mode) C = 150 pF, R = 150 4> 8 kV

Human body model (air-discharge mode) (1) C = 150 pF, R = 150 4 > 15 kV

ORDERING INFORMATION (Example)

PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE

MSE1PJ-M3/89A 0.006 89A 4500 7" diameter plastic tape and reel

MSE1PJHM3/89A (1) 0.006 89A 4500 7" diameter plastic tape and reel

0.2

0.4

0.6

0.8

1.0

1.2

95 105 115 125 135 145 165 175155

Lead Temperature (°C)

Average Forward Rectied Current (A)

TL Measured

at the Cathode Band Terminal

0.2

0.4

0.6

0.8

1.0

1.2

0 0.2 0.4 0.8 1.0 1.20.6

Average Forward Current (A)

Average Power Loss (W)

D = tp/T tp

D = 0.1

D = 0.2

D = 0.3

D = 0.5

D = 0.8

D = 1.0

MSE1PB thru MSE1PJ

www.vishay.com Vishay General Semiconductor

Revision: 24-May-12 3Document Number: 89067

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Fig. 3 - Typical Instantaneous Forward Characteristics

Fig. 4 - Typical Reverse Leakage Characteristics

Fig. 5 - Typical Junction Capacitance

Fig. 6 - Typical Transient Thermal Impedance

PACKAGE OUTLINE DIMENSIONS in inches (millimeters)

Instantaneous Forward Voltage (V)

Instantaneous Forward Current (A)

0.1

0.01

0.40 0.8 1.2 1.6 2.0 2.4

TJ = 150 °C

TJ = 125 °C

TJ = 25 °C

TJ = 50 °C

TJ = 75 °C

TJ = 100 °C

TJ = 175 °C

100

0.1

0.001

10 20 30 40 50 60 70 80 90 100

Percent of Rated Peak Reverse Voltage (%)

Instantaneous Reverse Current (μA)

0.01

= 150 °C

= 125 °C

= 25 °C

= 75 °C

= 100 °C

= 175 °C

Reverse Voltage (V)

Junction Capacitance (pF)

0.1 1 10 100

t - Pulse Duration (s)

1000

0.01 1 10 10001000.1

100

Transient Thermal Impedance (°C/W)

Junction to Ambient

0.106 (2.70)

0.091 (2.30)

0.055 (1.40)

0.047 (1.20)

Cathode Band

MicroSMP

0.030 (0.75)

0.022 (0.55)

0.030 (0.75)

0.022 (0.55)

0.059 (1.50)

0.043 (1.10)

0.039 (0.98)

0.031 (0.78)

0.091 (2.30)

0.083 (2.10)

0.020 (0.50)

0.043

(1.10)

0.011 (0.27)

0.005 (0.12)

0.079

(2.00)

0.032

(0.80)

0.032

(0.80)

Mounting Pad Layout

0.029 (0.73)

0.025 (0.63)

Legal Disclaimer Notice

www.vishay.com Vishay

Revision: 12-Mar-12 1Document Number: 91000

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