fAMOSPEC HIGH-POWER INDUSTRIAL TRANSISTORS NPN silicon power transistors designed for application in industrial and commercial equipment including high fidelity audio amplifiers, series and shunt regulators and power switches. FEATURES: * Collector-Emitter Sustaining Voltage - Vogoysus) = 120 V (Min.) - 2N4347 = 140 V (Min.) - 2N3442 * Low Collector-Emitter Saturation Voltage - Voeg;sat = 1.0 V (Max.) @ Ic = 2.0 A, Ip = 0.2 A - 2N4347 MAXIMUM RATINGS NPN 2N3442 2N4347 5.0 and 10 AMPERE NPN SILICON POWER TRANSISTORS 120 , 140 VOLTS 100 , 117 WATTS To, TEMPERATURE( C) Characteristic Symbol 2N4347 2N3442 Unit Collector-Emitter Voltage Veeo 120 140 V Collector-Base Voltage Vepo 140 160 Vv Emitter-Base Voitage Vego V Collector Current - Continuous le 5.0 10 A - Peak 10 15 Base Current - Continuous Ip 3.0 7.0 A - Peak 8.0 Total Power Dissipation @T,=25C Pp 100 117 Ww Derate above 25C 0.57 0.67 wre Operating and Storage Junction Ty. Tst C Temperature Range - 65 to +200 THERMAL CHARACTERISTICS Characteristic Symbol 2N4347 2N3442 Unit PIN 1.BASE Thermal Resistance Junction to Case Reje 1.75 1.5 "CAV 2.EMITTER COLLECTOR(CASE) ' FIGURE -1 POWER DERATING om | MILLIMETERS eg MIN | MAX = ' A | 33.75 | 30.96 21 B | 19.28 | 2223 Fes Cc 7.96 9.28 = 80 D 1118 | 1219 B E | 25.20 | 2667 a 60 F 092 | 1.09 B 40 G 138 | 1.62 3 H | 29.90 | 30.40 20 | 16.64 | 17.30 a J 3.88 436 0 K 10.67 | 11.18 0 25 50 75 100 125 150 175 2002N3442, 2N4347 NPN TT eee ELECTRICAL CHARACTERISTICS ( T, = 25C unless otherwise noted ) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector - Emitter Sustaining Voltage (1) Vegoisus) Vv (I, = 200 mA, I, = 0) 2N4347 120 2N3442 140 Collector Cutoff Current leeo mA ( Veg = 100 V, I, = 9) 2N4347 200 (Veg = 140 V, I, = 0) 2N3442 200 Collector Cutoff Current loex mA (Voce = 120 V, Vepiom =1.5V) 2N4347 2.0 (Voge = 140 V, Vegi = 1-5 V) 2N3442 5.0 Emitter Cutoff Current lego mA (Veg= 7.0V,1,=0) 5.0 ON CHARACTERISTICS (1) DC Current Gain hFE (lp =2.0A, Vog = 4.0 V) 2N4347 15 60 (1, =5.0A, Veep =4.0V) 2N4347 10 (ig =3.0A, Veg = 4.0V) 2N3442 20 70 (1p =10A, Vop = 4.0V) 2N3442 75 Collector - Emitter Saturation Voltage VeE{sat) V (l, =2.0 A, Ip =0.2 A) 2N4347 1.0 (I, =5.0 A, Ip = 0.63 A) 2N4347 2.0 (Ig = 10A, i, =2.0A) 2N3442 5.0 Base - Emitter On Voltage Vee(on) V (1g =2.0A, Veg = 4.0 V) 2N4347 2.0 (Ig =5.0A, Veg = 4.0 V) 2N4347 3.0 (Ig=10A, Veg = 4.0V) 2N3442 5.7 DYNAMIC CHARACTERISTICS Current Gain - Bandwidth Product KHz (Ig =O.5A, Vog = 4.0V, fgg =50 KHZ) 2N4347 f; 200 (Ig =2.0A, Vop=4.0V fipgt = 40 KHz) 2N3442 80 (1) Pulse Test: Pulse width = 300 us , Duty Cycle = 2.0% (2) f, = |r. | F test2N3442, 2N4347 NPN EEE ACTIVE REGION SAFE OPERATING AREA-2N3442 (SOA) TN Dons There are two limitation on the power handling ability of a transistor:average junction temperature and second -Bonding Wire Limit breakdown safe operating area curves indicate Ic-Vce _ Secend y Rint 2 $ "csrde Puse) limits of the transistor that must be observed for reliable operation i.e., the transistor must not be subjected to 2 3 5 7 10 15 20 30 5070100 140 200 greater dissipation than curves indicate. VCE , COLLECTOR EMITTER VOLTAGE (VOLTS) The data of SOA curve is base on T ypq=200 C:Tc is variable depending on conditions. second breakdown pulse limits are valid for duty cycles to 10% provided ACTIVE REGION SAFE OPERATING AREA-2N4947 Typg$ 200C, At high case temperatures, thermal limita- (SOA) tion will reduce the power that can be handled to values less than the limitations imposed by second breakdown. kc , COLLECTOR CURRENT (Amp) -Bording Wire Limit Thermally LimitT.=25 C(Singe Puse) - Second Breakdown Limit iC , COLLECTOR CURRENT (Amp) 2.3 5 7 10 20 30~StCS 100 120 200 VCE , COLLECTOR EMITTER VOLTAGE (VOLTS) DC CURRENT GAIN COLLECTOR SATURATION REGION C ~~ 1 hre , DC CURRENT GAIN Vee , COLLECTOR EMITTER VOLTAGE (VOLTS) Qo he a 10 20 50 100 200 500 1k 2k le , COLLECTOR CURRENT (AMP) Is, BASE CURRENT (AMP) 4 0.1 02 08 05 07 2 3 5 7 10