PRELIMINARY DATA SHEET
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PHOTOCOUPLER
PS8551L4
HIGH CMR, ANALOG OUTPUT TYPE
OPTICAL COUPLED ISOLATION AMPLIFIER NEPOC Series
Document No. PN10670EJ01V0DS (1st edition)
Date Published September 2007 NS
2007
1. V
DD
1
2. V
IN+
3. V
IN
4. GND1
5. GND2
6. V
OUT
7. V
OUT+
8. V
DD
2
12 43
6587
SHIELD
A/D Converter
D/A Converter
PIN CONNECTION
(Top View)
DESCRIPTION
The PS8551L4 is an optical coupled isolation amplifier that uses an IC provided with a high-accuracy A/D
conversion function (sigma-delta modulation method) and a GaAIAs light-emitting diode with high-speed response and
high luminance efficiency on the input side. On the output side IC provided with a high-accuracy D/A conversion
function.
The PS8551L4 is designed specifically for high common mode transient immunity (CMR) and high linearity (non-
linearity). The PS8551L4 is suitable for current sensing in motor drives.
FEATURES
Non-linearity (NL200 = 0.35% MAX.)
High common mode transient immunity (CMR = 10 kV/
μ
s MIN.)
High isolation voltage (BV = 5 000 Vr.m.s.)
• Gain tolerance (
Δ
G = ±3%)
Gain: 8 V/V
Package: 8-pin DIP lead bending type (Gull-wing) for long creepage distance
for surface mount (L4)
Ordering number of tape product : PS8551L4-E3 : 1 000 pcs/reel
• Pb-Free product
• Safety standards
UL approved: File No. E72422
CSA approved: No. CA 101391
BSI approved: No. 8937, 8938
SEMKO approved: No. 611507
NEMKO approved: No. P06207243
DEMKO approved: No. 313935
FIMKO approved: No. FI 22827
DIN EN60747-5-2 (VDE0884 Part2) approved (Option)
APPLICATIONS
AC Servo, inverter
• Measurement equipment
Preliminary Data Sheet PN10670EJ01V0DS
2
PS8551L4
PACKAGE DIMENSIONS (UNIT: mm)
Lead Bending Type (Gull-wing) For Long Creepage Distance For Surface Mount (L4)
9.25
+0.5
–0.25
6.5
+0.5
–0.1
10.05±0.4
0.62±0.25
0.2±0.15
3.7±0.35
3.5±0.2
1.01
+0.4
–0.2
2.54
0.5±0.15
Preliminary Data Sheet PN10670EJ01V0DS 3
PS8551L4
MARKING EXAMPLE
8551
NL731
No. 1 pin
Mark Type Number
Assembly Lot
731
Year Assembled
(Last 1 Digit)
LN
Rank Code
In-house Code
(L: Pb-Free)
Week Assembled
Preliminary Data Sheet PN10670EJ01V0DS
4
PS8551L4
ABSOLUTE MAXIMUM RATINGS (TA = 25°C, unless otherwise specified)
Parameter Symbol MIN. MAX. Unit
Operating Ambient Temperature TA 40 100 °C
Storage Temperature Tstg 55 125 °C
V egatloV ylppuS DD1, VDD2 0 5.5 V
V egatloV tupnI IN+, VIN 2 VDD1+0.5 V
2 Seconds Transient Input Voltage VIN+, VIN 6 VDD1+0.5 V
V egatloV tuptuO OUT+, VOUT0.5 VDD2+0.5 V
RECOMMENDED OPERATING CONDITIONS (TA = 25°C, unless otherwise specified)
Parameter Symbol MIN. MAX. Unit
Operating Ambient Temperature TA 40 85 °C
V egatloV ylppuS DD1, VDD2 4.5 5.5 V
Input Voltage (Accurate and Linear) VIN+, VIN 200 200 mV
Preliminary Data Sheet PN10670EJ01V0DS 5
PS8551L4
ELECTRICAL CHARACTERISTICS (DC Characteristics)
(TYP.: TA = 25°C, VIN+ = VIN = 0 V, VDD1 = VDD2 = 5 V,
MIN., MAX.: TA = 40 to +85°C, VIN+ = VIN = 200 to 200 mV, VDD1 = VDD2 = 4.5 to 5.5 V, unless
otherwise specified)
Parameter Symbol Conditions MIN. TYP. MAX. Unit
V egatloV tesffO tupnI os TA = 25°C 2 0.3 2 mV
3 3
Input Offset Voltage Drift
vs. Temperature
dVos/dTA TA = 40 to +85° 01 3 C
μ
V/°C
G niaG 200 mV VIN+ 200 mV 7.76 8 8.24 V/V
VOUT Gain Drift vs. Temperature dG/dTA TA = 40 to +85°V/V 48000.0 C °C
VOUT Non-linearity (200 mV) *1 NL200 200 mV VIN+ 200 mV 0.038 0.35 %
VOUT Non-linearity (200 mV) Drift
vs. Temperature
dNL200/dTA
TA = 40 to +85°/% 2000.0 C °C
VOUT Non-linearity (100 mV) *1 NL100 100 mV VIN+ 100 mV 0.026 0.2 %
Maximum Input Voltage before VOUT
Clipping
VIN+ Vm 803 .XAM
I tnerruC ylppuS tupnI DD1 VIN+ Am 81 5.41 Vm 004 =
Output Supply Current IDD2 VIN+ = Am 61 01 Vm 004
I tnerruC saiB tupnI IN+ VIN+ V0 = 0.5 5
μ
A
Input Bias Current Drift
vs. Temperature
dIIN+/dTA TA = 40 to +85°/An 54.0 C °C
Low Level Saturated Output Voltage VOL VIN+ = V 92.1 Vm 004
High Level Saturated Output Voltage VOH VIN+ V 8.3 Vm 004 =
Output Voltage (VIN+ = VIN = 0 V) VOCM VIN+ = VIN V 8.2 55.2 2.2 V 0 =
Output Short-circuit Current IOSC Am 6.81
Equivalent Input Resistance RIN k 003 Ω
VOUT Output Resistance ROUT 51 Ω
Input DC Common-Mode Rejection
Ratio*2
CMRRIN Bd 64
*1 Non-linearity : [Half of peak-to-peak output voltage deviation from best fit gain line] ÷ [Full-scale differential
output voltage] (%).
*2 CMRRIN is defined as the ratio of the differential signal gain (apply the differential signal between VIN+ and VIN) to
the isolation-mode gain (connect both input pins to GND1 and apply the signal between PS8551L4’s input and
output) at 60 Hz. This value is indicated in dB.
Preliminary Data Sheet PN10670EJ01V0DS
6
PS8551L4
ELECTRICAL CHARACTERISTICS (AC Characteristics)
(TYP.: TA = 25°C, VIN+ = VIN = 0 V, VDD1 = VDD2 = 5 V,
MIN., MAX.: TA = 40 to +85°C, VIN+ = VIN = 200 to 200 mV, VDD1 = VDD2 = 4.5 to 5.5 V, unless
otherwise specified)
Parameter Symbol Conditions MIN. TYP. MAX. Unit
VOUT Bandwidth (3 dB) fC VIN+ = 200 mVp-p, sine wave 50 100 kHz
VOUT N esioN OUT VIN+.s.m.rVm 5.13 V 0 =
VIN to VOUT Signal Delay (50 to 10%) tPD10 VIN+ = 0 to 150 mV step 2.03 3.3
μ
s
VIN to VOUT Signal Delay (50 to 50%) tPD50 6.5 74.3
VIN to VOUT Signal Delay (50 to 90%) tPD90 9.9 99.4
VOUT Rise Time/Fall Time (10 to 90%) tr/tf VIN+ = 0 to 150 mV step 2.96 6.6
μ
s
Common Mode Transient Immunity*1 CMR VCM = 1 kV, TA = 25°C 10 15 kV/
μ
s
Power Supply Noise Rejection*2 .s.m.rVm 071 zHM 1 = f RSP
*1 CMR is tested by applying steep rise/fall time (50 ns) voltage step between PS8551L4’s input and output. The
voltage step is amplified until the differential output voltage (VOUT+ VOUT) reaches more than 200 mV (> 1
μ
s)
deviation from the average output voltage.
*2 This is the value of the transient voltage at the differential output when 1 Vp-p, 1 MHz, and 40 ns rise/fall time
square wave is applied to both VDD1 and VDD2.
PACKAGE CHARACTERISTICS
Parameter Symbol Conditions MIN. TYP. MAX. Unit
T ,.nim 1 = t ,%06 = HR VB egatloV noitalosI A = 25°C 5 000 Vr.m.s.
R ecnatsiseR noitalosI I-O VI-O = 500 VDC > 109 Ω
Isolation Capacitance CI-O Fp 2.1 zHM 1 = f
USAGE CAUTIONS
1. This product is weak for static electricity by designed with high-speed integrated circuit so protect against static
electricity when handling.
2. Board designing
(1) By-pass capacitor of more than 0.1
μ
F is used between VDD and GND near device. Also, ensure that the
distance between the leads of the photocoupler and capacitor is no more than 10 mm.
(2) Make sure the distance between input terminal (VIN+ and VIN) of PS8551L4 and the devices (or components)
to be connected is as close as possible.
(3) Make sure the distance between output terminal (VOUT+ and VOUT) of PS8551L4 and the devices (or
components) to be connected is as close as possible.
3. Avoid storage at a high temperature and high humidity.
Preliminary Data Sheet PN10670EJ01V0DS 7
PS8551L4
TAPING SPECIFICATIONS (UNIT: mm)
Outline and Dimensions (Tape)
1.55±0.1
2.0±0.1
4.0±0.1
1.75±0.1
4.65 MAX.
9.95±0.1
12.0±0.1
1.5
+0.1
–0
7.5±0.1
10.55±0.1
16.0±0.3
4.2±0.1
0.3±0.05
Outline and Dimensions (Reel)
Packing: 1 000 pcs/reel
330±2.0
100±1.0
2.0±0.5
13.0±0.2
R 1.0 21.0±0.8
2.0±0.5
15.9 to 19.4
Outer edge of
flange
21.5±1.0
17.5±1.0
Tape Direction
PS8551L4-E3
Preliminary Data Sheet PN10670EJ01V0DS
8
PS8551L4
NOTES ON HANDLING
1. Recommended soldering conditions
(1) Infrared reflow soldering
062 erutarepmet wolfer kaeP °C or below (package surface temperature)
Time of peak reflow temperature 10 seconds or less
Time of temperature higher than 220°C 60 seconds or less
Time to preheat temperature from 120 to 180°C 120±30 s
eerhT swolfer fo rebmuN
llams gniniatnoc xulf nisoR xulF amount of chlorine (The flux with a
maximum chlorine content of 0.2 Wt% is recommended.)
120±30 s
(preheating)
220˚C
180˚C
Package Surface Temperature T (˚C)
Time (s)
Recommended Temperature Profile of Infrared Reflow
(heating)
to 10 s
to 60 s
260˚C MAX.
120˚C
(2) Wave soldering
• Temperature 260°C or below (molten solder temperature)
Time 10 seconds or less
• Preheating conditions 120°C or below (package surface temperature)
Number of times One (Allowed to be dipped in solder including plastic mold portion.)
Flux Rosin flux containing small amount of chlorine (The flux with a maximum chlorine
content of 0.2 Wt% is recommended.)
(3) Soldering by soldering iron
Peak temperature (lead part temperature) 350°C or below
Time (each pins) 3 seconds or less
llams gniniatnoc xulf nisoR xulF amount of chlorine (The flux with a
maximum chlorine content of 0.2 Wt% is recommended.)
(a) Soldering of leads should be made at the point 1.5 to 2.0 mm from the root of the lead.
(b) Please be sure that the temperature of the package would not be heated over 100°C.
Preliminary Data Sheet PN10670EJ01V0DS 9
PS8551L4
(4) Cautions
• Fluxes
Avoid removing the residual flux with freon-based and chlorine-based cleaning solvent.
2. Cautions regarding noise
Be aware that a malfunction may occur if voltage is applied suddenly between the photocoupler’s input and
output, even if the voltage is within the absolute maximum ratings.
Preliminary Data Sheet PN10670EJ01V0DS
10
PS8551L4
The information in this document is current as of September, 2007. The information is subject to
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PS8551L4
Caution GaAs Products This product uses gallium arsenide (GaAs).
GaAs vapor and powder are hazardous to human health if inhaled or ingested, so please observe
the following points.
• Follow related laws and ordinances when disposing of the product. If there are no applicable laws
and/or ordinances, dispose of the product as recommended below.
1. Commission a disposal company able to (with a license to) collect, transport and dispose of
materials that contain arsenic and other such industrial waste materials.
2. Exclude the product from general industrial waste and household garbage, and ensure that the
product is controlled (as industrial waste subject to special control) up until final disposal.
• Do not burn, destroy, cut, crush, or chemically dissolve the product.
• Do not lick the product or in any way allow it to enter the mouth.