NJG1103F1
- 1 -
1.5/1.9GHz LOW NOISE AMPLIFIER
GaAs MMIC
nGENERAL DESCRIPTION nPACKAGE OUTLINE
NJG1103F1 is a Low Noise Amplifier GaAs MMIC
designed for 1.5GHz and 1.9GHz band digital cellular
phone and Japanese PHS handsets.
This amplifier provides low noise figure, high gain
and high IP3 operated by single low positive power supply.
This amplifier can be tuned to wide frequency point.
(Best for 1.5GHz or 1.9GHz)
Small package of MTP6-1 is adopted.
nFEATURES
lLow voltage operation +2.7V typ.
lLow current consumption 3mA typ.
lHigh small signal gain 16dB typ. @f=1.489GHz
14dB typ. @f=1.9GHz
lLow Noise Figure 1.2dB typ. @f=1.489GHz
1.4dB typ. @f=1.9GHz
lHigh Input IP3 -4dBm typ. @f=1.489+1.4891GHz
-3dBm typ. @f=1.9+1.9001GHz
lHigh Output IP3 +12dBm typ. @f=1.489+1.4891GHz
+11dBm typ. @f=1.9+1.9001GHz
lPackage MTP6-1 (Mount Size: 2.8 x 2.9 x 1.2mm)
nPIN CONFIGURATION
NJG1103F1
Pin connection
1.LNAOUT
2.EXTIND
3.GND
4.GND
5.GND
6.LNAIN
Note: is package orientation mark.
F1 TYPE
(Top View)
6
5
4
1
2
3
NJG1103F1
- 2 -
nABSOLUTE MAXIMUM RATINGS (Ta=+25°C, Zs=Zl=50Ω)
PARAMETER SYMBOL CONDITIONS RATINGS UNITS
Drain Voltage VDD 5.0 V
Input Power Pin VDD=2.7V+10dBm
Power Dissipation PD150 mW
Operating Temperature Topr -40~+85 °C
Storage Temperature Tstg -55~+125 °C
nELECTRICAL CHARACTERISTICS 1 (1.5GHz Band)
(VDD=2.7V, f=1.489GHz, Ta=+25°C, Zs=Zl=50Ω, Circuit: Application 1)
PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNITS
Operating Frequency freq1 1.470 1.489 1.520 GHz
Drain Voltage VDD 2.5 2.7 4.5 V
Operating Current IDD RF OFF -3.0 3.8 mA
Small Signal Gain Gain 14.0 16.0 18.0 dB
Gain Flatness Gflat f=1.47~1.52GHz -0.5 1.0 dB
Noise Figure NF -1.2 1.4 dB
Pout at 1dB Gain
Compression point P-1dB -6.0 -2.0 -dBm
Input 3rd Order
Intercept Point IIP3 f=1.489+1.4891GHz -7.0 -4.0 -dBm
LNAIN Port VSWR VSWRi-2.0 3.0
LNAOUT Port VSWR VSWRo-2.0 3.0
nELECTRICAL CHARACTERISTICS 2 (1.9GHz Band)
(VDD=2.7V, f=1.9GHz, Ta=+25°C, Zs=Zl=50Ω, Circuit: Application 2)
PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNITS
Operating Frequency freq2 1.89 1.90 1.92 GHz
Drain Voltage VDD 2.5 2.7 4.5 V
Operating Current IDD RF OFF -3.0 3.8 mA
Small Signal Gain Gain 12.0 14.0 16.0 dB
Gain Flatness Gflat f=1.89~1.92GHz -0.5 1.0 dB
Noise Figure NF -1.4 1.6 dB
Pout at 1dB Gain
Compression point P-1dB -4.5 -0.5 -dBm
Input 3rd Order
Intercept Point IIP3 f=1.9+1.9001GHz -6.0 -3.0 -dBm
LNAIN Port VSWR VSWRi-2.0 3.0
LNAOUT Port VSWR VSWRo-2.0 3.0
NJG1103F1
- 3 -
14
14.5
15
15.5
16
16.5
17
2.5 33.5 44.5 5
Gain vs. VDD
Gain(dB)
VDD(V)
( f=1.489GHz )
0.6
0.8
1
1.2
1.4
1.6
1.8
2
2.2
2.4
2.6
0
2
4
6
8
10
12
14
16
18
20
1.4 1.42 1.44 1.46 1.48 1.5 1.52 1.54 1.56 1.58 1.6
NF,Gain vs.frequency
NF(dB)
Gain(dB)
frequency(GHz)
(VDD=2.7V,IDD=3.0mA)
NF
Gain
-25
-20
-15
-10
-5
0
5
10
15
20
25
-50
-40
-30
-20
-10
0
10
20
30
40
50
0.5 0.75 11.25 1.5 1.75 22.25 2.5
S21,S11,S22,S12 vs. frequency
S21,S11,S22(dB)
S12(dB)
frequency(GHz)
S21
S22
S11
S12
(VDD=2.7V,IDD=3.0mA)
-70
-60
-50
-40
-30
-20
-10
0
10
-40 -35 -30 -25 -20 -15 -10 -5 0
Pin vs. Pout,IM3
Pout,IM3(dBm)
Pin(dBm)
Pout
IM3
(VDD=2.7V,IDD=3.0mA,f=1489+1489.1MHz)
IIP3=-3.8dBm
0.7
0.8
0.9
1
1.1
1.2
2.9
3
3.1
3.2
3.3
3.4
2.5 33.5 44.5 5
NF,IDD vs. VDD
NF(dB)
IDD(mA)
VDD(V)
( f=1.489GHz )
IDD
NF
-30
-25
-20
-15
-10
-5
0
5
10
-40 -35 -30 -25 -20 -15 -10 -5 0
Pin vs. Pout
Pout(dBm)
Pin(dBm)
P-1dB=-1.1dBm
(VDD=2.7V,IDD=3.0mA,freq=1.489GHz)
nTYPICAL CHARACTERISTICS (1.5GHz Band)
NJG1103F1
- 4 -
nTYPICAL CHARACTERISTICS (1.5GHz Band)
NJG1103F1
- 5 -
-25
-20
-15
-10
-5
0
5
10
15
20
25
0 2 4 6 8 10 12 14 16 18 20
S21 vs. frequency(~20GHz)
S21(dB)
frequency(GHz)
(VDD=2.7V,IDD=3.0mA)
-50
-40
-30
-20
-10
0
10
20
30
40
50
0 2 4 6 8 10 12 14 16 18 20
S12 vs. frequency(~20GHz)
S12(dB)
frequency(GHz)
(VDD=2.7V,IDD=3.0mA)
-25
-20
-15
-10
-5
0
5
10
15
20
25
0 2 4 6 8 10 12 14 16 18 20
S11 vs. frequency(~20GHz)
S11(dB)
frequency(GHz)
(VDD=2.7V,IDD=3.0mA)
-25
-20
-15
-10
-5
0
5
10
15
20
25
0 2 4 6 8 10 12 14 16 18 20
S22 vs. frequency(~20GHz)
S22(dB)
frequency(GHz)
(VDD=2.7V,IDD=3.0mA)
nTYPICAL CHARACTERISTICS (1.5GHz Band)
NJG1103F1
- 6 -
nTYPICAL CHARACTERISTICS (1.5GHz Band)
Scattering Parameter Table 1
V
DD=2.7V, IDD=3.0mA, Zo=50Ω
S11 S21 S12 S22
Freq
(GHz) mag
(units) ang
(deg) mag
(units) ang
(deg) mag
(units) ang
(deg) mag
(units) ang
(deg)
0.1 1.000 -3.577 0.030 -96.974 0.000 -28.893 1.000 -3.994
0.2 1.000 -7.804 0.008 29.498 0.001 123.060 1.000 -8.157
0.3 1.000 -11.749 0.017 -17.030 0.001 90.574 1.000 -11.932
0.4 1.000 -15.677 0.039 -22.484 0.001 61.254 1.000 -15.939
0.5 1.000 -18.892 0.069 -35.493 0.002 70.970 1.000 -19.427
0.6 1.000 -22.855 0.105 -43.917 0.002 68.009 1.000 -23.659
0.7 0.989 -25.943 0.148 -52.340 0.002 71.027 0.999 -27.163
0.8 1.000 -29.192 0.211 -60.102 0.002 52.546 0.999 -31.190
0.9 0.967 -32.626 0.283 -68.097 0.001 54.258 0.993 -34.941
1.0 0.978 -34.942 0.384 -76.173 0.001 65.410 0.992 -39.139
1.1 0.952 -38.109 0.517 -84.022 0.001 -172.907 0.990 -43.543
1.2 0.958 -40.122 0.721 -92.837 0.001 -143.350 0.979 -48.600
1.3 0.939 -42.825 1.026 -103.156 0.004 -145.335 0.960 -55.801
1.4 0.944 -45.403 1.595 -118.935 0.008 -153.556 0.893 -67.092
1.5 0.912 -49.324 2.620 -147.296 0.017 -174.933 0.647 -88.575
1.6 0.848 -51.073 3.159 163.534 0.026 141.392 0.117 -8.962
1.7 0.835 -48.490 2.335 124.924 0.023 107.004 0.638 -2.204
1.8 0.854 -48.500 1.669 105.980 0.018 92.352 0.834 -16.766
1.9 0.859 -49.077 1.305 94.208 0.015 84.686 0.896 -24.947
2.0 0.856 -49.978 1.080 86.597 0.014 83.498 0.933 -30.122
2.1 0.858 -50.862 0.930 79.499 0.013 82.364 0.941 -33.659
2.2 0.843 -51.565 0.827 74.248 0.012 82.389 0.958 -36.464
2.3 0.843 -52.644 0.752 69.058 0.012 82.449 0.959 -38.653
2.4 0.825 -53.066 0.693 65.124 0.012 84.137 0.969 -40.685
2.5 0.823 -54.104 0.651 60.824 0.011 87.269 0.967 -42.276
2.6 0.806 -54.425 0.618 56.840 0.012 89.464 0.975 -44.085
2.7 0.805 -55.530 0.592 52.933 0.012 91.483 0.974 -45.755
2.8 0.793 -56.240 0.567 49.451 0.013 93.498 0.980 -47.284
2.9 0.783 -57.285 0.550 45.760 0.013 92.174 0.975 -48.847
3.0 0.778 -58.456 0.536 41.775 0.013 94.705 0.980 -50.377
6
5
4
1
2
VDD
8.2nH 1000pF
Ref.
Ref.
S11
S22
Scattering Parameter Evaluation Circuit
NJG1103F1
- 7 -
0.6
0.8
1
1.2
1.4
1.6
1.8
2
2.2
2.4
2.6
0
2
4
6
8
10
12
14
16
18
20
1.8 1.82 1.84 1.86 1.88 1.9 1.92 1.94 1.96 1.98 2
NF,Gain vs.frequency
NF(dB)
Gain(dB)
frequency(GHz)
(VDD=2.7V,IDD=3.0mA)
NF
Gain
nTYPICAL CHARACTERISTICS (1.9GHz Band)
12
12.5
13
13.5
14
14.5
15
2.5 33.5 44.5 5
Gain vs. VDD
Gain(dB)
VDD(V)
( f=1.9GHz )
0.9
1
1.1
1.2
1.3
1.4
2.9
3
3.1
3.2
3.3
3.4
2.5 33.5 44.5 5
NF,IDD vs. VDD
NF(dB)
IDD(mA)
VDD(V)
( f=1.9GHz )
NF
IDD
-25
-20
-15
-10
-5
0
5
10
15
20
25
-50
-40
-30
-20
-10
0
10
20
30
40
50
11.25 1.5 1.75 22.25 2.5 2.75 3
S21,S11,S22,S12 vs. frequency
S21,S11,S22(dB)
S12(dB)
frequency(GHz)
S21
S22
S11
S12
(VDD=2.7V,IDD=3.0mA)
-30
-25
-20
-15
-10
-5
0
5
10
-40 -35 -30 -25 -20 -15 -10 -5 0
Pin vs. Pout
Pout(dBm)
Pin(dBm)
P-1dB=-0.5dBm
(VDD=2.7V,IDD=3.0mA,freq=1.9GHz)
-70
-60
-50
-40
-30
-20
-10
0
10
-40 -35 -30 -25 -20 -15 -10 -5 0
Pin vs. Pout,IM3
Pout,IM3(dBm)
Pin(dBm)
Pout
IM3
(VDD=2.7V,IDD=3.0mA,f=1900+1900.1MHz)
IIP3=-3.2dBm
NJG1103F1
- 8 -
nTYPICAL CHARACTERISTICS (1.9GHz Band)
NJG1103F1
- 9 -
-25
-20
-15
-10
-5
0
5
10
15
20
25
0 2 4 6 8 10 12 14 16 18 20
S21 vs. frequency(~20GHz)
S21(dB)
frequency(GHz)
(VDD=2.7V,IDD=3.0mA)
nTYPICAL CHARACTERISTICS (1.9GHz Band)
-50
-40
-30
-20
-10
0
10
20
30
40
50
0 2 4 6 8 10 12 14 16 18 20
S12 vs. frequency(~20GHz)
S12(dB)
frequency(GHz)
(VDD=2.7V,IDD=3.0mA)
-25
-20
-15
-10
-5
0
5
10
15
20
25
0 2 4 6 8 10 12 14 16 18 20
S11 vs. frequency(~20GHz)
S11(dB)
frequency(GHz)
(VDD=2.7V,IDD=3.0mA)
-25
-20
-15
-10
-5
0
5
10
15
20
25
0 2 4 6 8 10 12 14 16 18 20
S22 vs. frequency(~20GHz)
S22(dB)
frequency(GHz)
(VDD=2.7V,IDD=3.0mA)
NJG1103F1
- 10 -
nTYPICAL CHARACTERISTICS (1.9GHz Band)
Scattering Parameter Table 2
V
DD=2.7V, IDD=3.0mA, Zo=50Ω
S11 S21 S12 S22
Freq
(GHz) mag
(units) ang
(deg) mag
(units) ang
(deg) mag
(units) ang
(deg) mag
(units) ang
(deg)
0.1 1.000 -3.466 0.013 -99.853 0.001 -40.688 1.000 -3.792
0.2 1.000 -7.836 0.003 120.878 0.000 111.001 1.000 -7.797
0.3 1.000 -11.376 0.011 -23.230 0.001 77.901 1.000 -11.547
0.4 1.000 -15.369 0.024 -31.645 0.001 60.826 1.000 -15.222
0.5 1.000 -18.524 0.045 -34.983 0.002 73.639 1.000 -18.774
0.6 1.000 -22.254 0.068 -44.466 0.002 64.832 1.000 -22.517
0.7 0.987 -25.261 0.096 -51.466 0.002 59.880 0.998 -25.988
0.8 0.994 -28.510 0.134 -58.880 0.002 62.909 0.997 -29.586
0.9 0.962 -31.527 0.173 -65.887 0.002 62.762 0.994 -32.980
1.0 0.972 -33.806 0.227 -72.166 0.001 64.214 0.994 -36.537
1.1 0.946 -36.765 0.287 -80.123 0.001 59.903 0.993 -40.081
1.2 0.951 -38.499 0.370 -86.666 0.000 104.075 0.990 -43.600
1.3 0.931 -40.743 0.466 -93.543 0.001 -144.742 0.987 -47.623
1.4 0.936 -42.455 0.612 -101.148 0.002 -131.875 0.979 -52.301
1.5 0.922 -44.128 0.816 -109.855 0.004 -140.321 0.962 -58.048
1.6 0.927 -46.084 1.122 -120.983 0.007 -150.577 0.927 -66.488
1.7 0.915 -48.182 1.603 -137.240 0.012 -161.035 0.830 -79.157
1.8 0.900 -50.392 2.281 -162.468 0.018 -178.320 0.584 -100.354
1.9 0.853 -51.550 2.711 159.780 0.026 152.338 0.052 -128.112
2.0 0.829 -50.493 2.315 125.880 0.026 124.607 0.468 12.049
2.1 0.835 -49.844 1.803 104.689 0.023 107.196 0.718 -6.837
2.2 0.829 -49.732 1.426 91.557 0.020 99.244 0.827 -17.772
2.3 0.834 -50.427 1.192 82.277 0.018 94.680 0.876 -24.741
2.4 0.821 -50.628 1.027 75.650 0.017 92.857 0.906 -29.743
2.5 0.821 -51.483 0.922 69.553 0.016 91.557 0.920 -33.371
2.6 0.806 -51.476 0.841 64.184 0.015 91.315 0.934 -36.756
2.7 0.805 -52.354 0.782 59.683 0.015 91.885 0.939 -39.453
2.8 0.798 -52.928 0.731 55.213 0.014 91.583 0.947 -41.774
2.9 0.786 -53.597 0.692 51.129 0.015 95.367 0.945 -43.991
3.0 0.784 -54.637 0.665 46.939 0.015 101.051 0.955 -46.322
6
5
4
1
2
VDD
5.6nH 1000pF
Ref.
Ref.
S11
S22
Scattering Parameter Evaluation Circuit
NJG1103F1
- 11 -
nRECOMMEND CIRCUIT 1 (1.5GHz Band)
nRECOMMEND CIRCUIT 2 (1.9GHz Band)
6
5
4
1
2
3
IN
Zo=50Ω
OUT
Zo=50Ω
VDD
8.2nH
10nH
8.2nH 1000pF
6
5
4
1
2
3
IN
Zo=50Ω
OUT
Zo=50Ω
VDD
4.7nH
5.6nH
5.6nH 1000pF
NJG1103F1
- 12 -
nRECOMMENDED PCB DESIGN
(Top View)
PARTS LIST
PARTS ID 1.5GHz 1.9GHz COMMENT
L1 8.2nH 4.7nH TAIYO-YUDEN (HK1005)
L2 10nH 5.6nH TAIYO-YUDEN (HK1005)
L3 8.2nH 5.6nH TAIYO-YUDEN (HK1005)
C1 1000pF 1000pF MURATA (GRM36)
L1
L2
L3
C1
IN OUT
PCB : FR4, t=0.2mm
MICROSTRIP LINE WIDTH=0.4mm(Z0=50Ω)
PCB SIZE : 14.0x14.0mm
V
DD
NJG1103F1
- 13 -
n
PACKAGE OUTLINE (MTP6-1)
Cautions on using this product
This product contains Gallium-Arsenide (GaAs) which is a harmful material.
• Do NOT eat or put into mouth.
• Do NOT dispose in fire or break up this product.
• Do NOT chemically make gas or powder with this product.
• To waste this product, please obey the relating law of your country.
This product may be damaged with electric static discharge (ESD) or spike voltage. Please handle
with care to avoid these damages.
[CAUTION]
The specifications on this databook are only
given for information , without any guarantee
as regards either mistakes or omissions. The
application circuits in this databook are
described only to show representative usages
of the product and not intended for the
guarantee or permission of any right including
the industrial rights.
Lead material : Copper
Lead surface finish : Solder plating
Molding material : Epoxy resin
UNIT : mm
Weight : 15mg
Mouser Electronics
Authorized Distributor
Click to View Pricing, Inventory, Delivery & Lifecycle Information:
NJR:
NJG1103F1-TE1 NJG1103F1-TE2 NJG#1103F1-TE1 NJG#1103F1-TE2