Internati onal Rectifier PD-9.755 IRFP260 HEXFET Power MOSFET Dynamic dv/dt Fast Switching Description Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost- The TO-247 package Repetitive Avalanche Rated Isolated Central Mounting Hole Ease of Paralleling Simple Drive Requirements Rating Vogg = 200V Rosvon) = 0.0552. _.ctiveness. meet the requirements of most safety specifications. Absolute Maximum Ratings 3 preferred for commercialindustrial applications where higher power levels preclude the use of TO-220 devices. The TO-247 is similar but superior to the earlier TO-218 package because of its isolated mounting hole. It also provides greater creepage distance between pins to TO-247AC Parameter Max. Units Ib @ Tce = 25C Continuous Drain Current, Vag @ 10 V 46 Ip @ Tc =100C | Continuous Drain Current, Vag @ 10 V 29 A Ibm Pulsed Drain Current 180 Pp @ Tc = 25C__| Power Dissipation 280 Ww Linear Derating Factor 2.2 WPGC Vas Gate-to-Source Voltage +20 Vv Eas Single Pulse Avalanche Energy @ 1000 mJ lAR Avalanche Current 46 A Ear Repetitive Avalanche Energy 28 mJ dv/dt Peak Diode Recovery dv/dt 5.0 Vins Ts Operating Junction and [ -55 to +150 Tsta Storage Temperature Range C Soldering Temperature, for 10 seconds 300 (1.6mm from case) Mounting Torque, 6-32 or M3 screw 10 Ibfsin (1.1 Nem) Thermal Resistance Parameter Min. Typ. Max. Units Rayc Junction-to-Case _ _ 0.45 Recs Case-to-Sink, Flat, Greased Surface _ 0.24 _ C Rea Junction-to-Ambient _ = 40 977IRFP260 Electrical Characteristics @ Ty = 25C (unless otherwise specified) Parameter Min. | Typ. | Max. | Units Test Conditions Vieryoss Drain-to-Source Breakdown Voltage 200 | _ Vi | Vas=0V, Ip= 250HA AVierypss/ATs| Breakdown Voltage Temp. Coefficient | 0.24 | | V/C | Reference to 25C, Ip= 1mA Roston} Static Drain-to-Source On-Resistance _ |0.055| Q | Vas=10V, Ip=28A Vasith) Gate Threshold Voltage 2.0 _ 4.0 Vs | Vps=Ves, lp= 250A Os Forward Transconductance 24 _ _ S| Vos=50V, ip=28A Ipss Drain-to-Source Leakage Current 2 LA Vos=200V, Vas=0V _ _ 250 Vps=160V, Ves=0V, Ty=125C loss Gate-to-Source Forward Leakage 100 nA Vas=20V Gate-to-Source Reverse Leakage | -100 Vaes=-20V Qg Total Gate Charge | 230 Ip=46A Qgs Gate-to-Source Charge _ 42 nC | Vps=160V Qga Gate-to-Drain ("Miller") Charge _ = 110 Ves=10V See Fig. 6 and 13 @ tavon) Turn-On Delay Time _ 23 _ Vpp=100V tr Rise Time _ 120 _ ns ip=46A tajotf) Turn-Off Delay Time ; 100 | Re=4.30 tr Fall Time _ 94 _ Rp=2.1Q See Figure 10 @ Lp Internal Drain Inductance _ 5.0 Bam (2a) j nH | from package is | Ls Internal Source Inductance | 13 | and center of die contact 8 Ciss Input Capacitance |5200| Ves=0V Coss Output Capacitance |1200| pF | Vos= 25V Crs Reverse Transfer Capacitance | 310 _ f=1.0MHz See Figure 5 Source-Drain Ratings and Characteristics Parameter Min. | Typ. | Max. | Units Test Conditions Is Continuous Source Current _ _ 46 MOSFET symbol a (Body Diode) A showing the Ism Pulsed Source Current _ _ 180 integral reverse a (Body Diode) p-n junction diode. s Vsp Diode Forward Voltage _ _ 1.8 Vs | Ty=25C, Is=46A, Vag=0V @ tr Reverse Recovery Time _ 390 | 590 ns | Ty=25C, Ir=46A Qn Reverse Recovery Charge _ 48 | 7.2 | uC |di/dt=100A/1s ton Forward Turn-On Time Intrinsic turn-on time is neglegible (turn-on is dominated by Ls+Lp) Notes: @ Repetitive rating; pulse width limited by Isp<46A, di/dts230A/us, Vop<V(BR)Dss, max. junction temperature (See Figure 11) Tys150C Vop=50V, starting Ty=25C, L=708,1H Pulse width < 300 ps; duty cycle <2%. Re@=25Q, las=46A (See Figure 12) 978Ip, Drain Current (Amps) Ip, Drain Current (Amps) 4. 20us PULSE WIDTH To = 25C so7! 400 104 Vps, Drain-to-Source Voltage (volts) Fig 1. Typical Output Characteristics, To=25C Vos = SOV 20us PULSE WIDTK 4 6 9 10 Vas, Gate-to-Source Voltage (volts) Fig 3. Typical Transfer Characteristics Rosion) Drain-to-Source On Resistance 979 Ip, Drain Current (Amps) (Normalized) IRFP260 20us PULSE WIDTH Te = 150C sont 400 tot Vps, Drain-to-Source Voltage (volts) Fig 2. Typical Output Characteristics, Tc=150C Ves = 10V 0.0 -60 -40 -20 0 20 40 60 80 100 120 140 160 Ty, Junction Temperature (C) Fig 4. Normalized On-Resistance Vs. TemperatureIRFP260 12000 20 Go = OV. Ff = IMHz Cass = gs + fgg Cas Crss = Cga + B a B tm Capacitance (pF) 4000 Coss Vas, Gate-to-Source Voltage (volts) Chss 0 SEE FIGURE 13 400 404 0 40 80 120 160 200 240 Vps, Drain-to-Source Voltage (volts) Qe, Total Gate Charge (nC) Fig 5. Typical Capacitance Vs. Fig 6. Typical Gate Charge Vs. Drain-to-Source Voltage Gate-to-Source Voltage 103 GPERATION IN THIS AREA LIMITED O BY R Q 5 DS (ON) E < QB 2 ~ a c E 2 x 102 3 =, & 2 oO 3 6 oO 2 Cc g io o Qa > n o a 5 we L a T ~ Tye 150C Veg = OV SINGLE 0.5 1.9 1.5 2.0 2.5 Te 8 tg eS ge eS ag Vsp, Source-to-Drain Voltage (volts) Vps, Drain-to-Source Voltage (volts) Fig 7. Typical Source-Drain Diode Fig 8. Maximum Safe Operating Area Forward Voltage 980Ip, Drain Current (Amps) 25 50 75 100 125 450 Tc, Case Temperature (C) NOTES: IRFP260 Ro Vos D.U.T. a "Vp YT10v Pulse Width < tps Duty Factor < 0.1% x Fig 10a. Switching Time Test Circuit Vps 20% Sf \ fo | 10% + Al Ves~ tgon) tr tat, tf Fig 10b. Switching Time Waveforms T Pom tt t+ ta 1. DUTY FACTOR, D=ti/t2 2. PEAK T3=Pom Xx Ztnjc + Tc 1078 0.1 4 10 t;, Rectangular Pulse Duration (seconds) Fig 9. Maximum Drain Current Vs. Case Temperature 1 oO 3 N 0: a Cc a wo oD ec B E 10 SINGLE PULSE 2g : (THERMAL RESPONSE) Fe 10 105 1074 108 Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-CaseIRFP260 Vary tp to obtain Vos > required las Fig 12a. Unclamped Inductive Test Circuit a 3S 3 V(BR)DSsS Eas, Single Pulse Energy (mu) po = 50V Vps 25 50 75 100 125 150 Starting Ty, Junction Temperature(C) lag eee Fig 12c. Maximum Avalanche Energy Fig 12b. Unclamped Inductive Waveforms Vs. Drain Current Current Regulator wvtl> a oe WT Et k- Qas +e Aap Ves Va amat [L Charge + la *F Ip Current Sampling Resistors Fig 13a. Basic Gate Charge Waveform Fig 13b. Gate Charge Test Circuit Appendix A: Figure 14, Peak Diode Recovery dv/dt Test Circuit See page 1505 Appendix B: Package Outline Mechanical Drawing See page 1511 Appendix C: Part Marking information - See page 1517 International Rectifier 982