1N4148S, 1N4149S, 1N4154S, 1N4446S to 1N4449S Silicon Epitaxial Planar Diodes Silicon Epitaxial Planar Diodes for general purposes and nr] fast switching applications. max.1.9% These diodes are delivered taped (see page 4). Ess Cathode | Mark | max.0.428 Glass case JEDEC DO-34 Marking: Black cathode band. Weight approximately 0.07 g Type and ITT logo on reel or ammopak. Dimensions in mm Absolute Maximum Ratings Symbol Value Unit Reverse Voltage 1N4148S, 1N4149S, 1N4446S, 1N4447S, 1N4448S, 1N4449S Vr 75 Vv 1N4154S Vr 25 Vv Peak Reverse Voltage 1N4148S, 1N4149S, 1N4446S, 1N4447S, 1N4448S, 1N4449S VrM 100 Vv 1N4154S Vrm 35 Vv Rectified Current (Average) lo 1501) mA Half Wave Rectification with Resist. Load at Tamb = 25C and f = 50 Hz Surge Forward Current att <1sandT; = 25C lFsm 500 mA Power Dissipation at Tamp = 25C Prot 3001) mw Junction Temperature T; 175 C Storage Temperature Range Ts 65 to +175 C 1) Valid provided that leads at a distance of 8 mm from case are kept at ambient temperature. 2. MM 4642711 0004053 3431N4148S, 1N4149S, 1N4154S, 1N4446S to 1N4449S Characteristics at T; = 25C Symbol Min. Typ. Max. Unit Forward Voltage at le = 5mA, 1N4148S Ve 0.62 - 0.72 Vv at le = 10 mA, 1N4148S, 1N4149S Ve - - 1 Vv at le = 20 mA, 1N4446S, 1N4447S Ve - - 1 Vv at lp = 30 mA, 1N4154S, 1N4449S Ve - - 1 Vv atle = 100 mA 1N4448S Ve - - 1 Vv Leakage Current 1N4148S, 1N4149S, 1N4446S, 1N4447S, 1N4448S, 1N4449S atV,_ = 20V Ir - - 25 nA atV,_ = 75V Ip - ~ 5 pA atV_ = 20V,T; = 150C Ir - - 50 pA 1N4154S at Va = 25V In - - 100 nA atV_ = 25V,T; = 150C Ip - - 100 pA Reverse Breakdown Voltage tested with 100 WA pulses 1N4148S, 1N4149S, 1N4446S, 1N4447S, Viera 100 - - V 1N4448S, 1N4449S tested with 5 yA pulses 1N4154S Vieryr 35 - - Vv Capacitance . at Ve = Ve_ =0 : 1N4148S, 1N4154S, 1N4446S, 1N4448S Ctot - - 4 pF 1N4149S, 1N4447S, 1N4449S Cot - - 2 pF Reverse Recovery Time from Ir = 10 mA to lq = 1MA, Va = 6V, R, = 1000 1N4148S, 1N4149S, 1N4446S, 1N4447S, 1N4448S, ter - - 4 ns 1N4449S 1N4154S ter - ~ 2 ns Thermal Resistance Rtha - - 0.4 1) K/mwWw Junction to Ambient Air Rectification Efficiency Ty 0.45 - - - atf = 100 MHz, Var = 2V 1) Valid provided that leads at a distance of 8 mm from the case are kept at ambient temperature. MB 4682711 0004054 2co4 mm1N4148S, 1N4149S, 1N4154S, 1N4446S to 1N4449S Taping ITT Semiconductors Group World Headquarters INTERMETALL Hans-Bunte-Strasse 19 D-7800 Freiburg Tel. (0761) 517-0, Telex 772715 Telefax (0761) 517-174 Printed in Germany by A. Simon & Sohn, Freiburg (11/91) Order No. 6221-20-3E Parameter . Value in mm a 6+ 1 b ; 26 +02 c defined by aandb [14 lp| 0.2 max. m 0.5 max. s}) ; 5+05 y 0 1) Accumulated pitch tolerance over 10 pitches is + 1mm Reprinting is generally permitted, indicating the source. However, our consent must be obtained in all cases. Information furnished by ITT is believed to be accurate and reliable. However, no responsibility is as- sumed by ITT for its use; nor for any infringements of patents or other rights of third parties which may result from its use. No license is gran- ted by implication or otherwise under any patent or patent rights of ITT. The information and suggestions are given without obligation and cannot give rise to any liability; they do not indicate the availability of the components mentioned. Delivery of development samples does not imply any obligation of ITT to supply larger amounts of such units to a fixed term. To this effect, only written confirmation of orders will be binding. * mm 4682711 0004055 110 mm