A D V A N C E D S E M I C O N D U C T O R, I N C. REV. B
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 1/1
Specif i cations are subjec t to change without notice.
CHARACTERISTICS TC = 25 °C
SYMBOL NONETEST CONDITIO NS MINIMUM TYPICAL MAXIMUM UNITS
BVCBO IC = 50 mA 70 V
BVCES IC = 50 mA 70 V
BVEBO IE = 30 mA 3.0 V
ICES VCE = 40 V 30 mA
hFE VCE = 5.0 V IC = 500 mA 10 --- ---
PG
η
ηη
ηC VCC = 40 V POUT = 200 W f = 1.2 to 1.4 GHz 7.0
45
dB
%
NPN SILICON RF POWER TRANSISTOR
ALR200
DESCRIPTION:
The ASI ALR200 is Designed for
1200 – 1400 MHz, L-Band Applications.
FEATURES:
• Internal Input/Output Matching Network
• PG = 7.0 dB at 200 W/1400 MHz
• Omnigold™ Metalization System
MAXIMUM RATINGS
IC 16 A
VCC 40 V
PDISS 575 W @ TC = 25 °C
TJ -65 °C to +250 °C
TSTG -65 °C to +200 °C
θ
θθ
θJC 0.26 °C/W
PACKAGE STYLE .400 2L FLG (A)
ORDER CODE: ASI10515
MINIMUM
inch es / m m
.100 / 2.54
.376 / 9.55
.050 / 1.27
.110 / 2.79
B
C
D
E
F
G
A
MAXIMUM
.120 / 3.05
.130 / 3.30
.396 / 10.06
inches / mm
.193 / 4.90
H
DIM
K
L
I
J
.490 / 12.45
.690 / 17.53
.003 / 0.08
.510 / 12.95
.710 / 18.03
.006 / 0.18
N
M.118 / 3.00 .131 / 3.33
.135 / 3.43 .145 / 3.68
.072 / 1.83.052 / 1.32
P .230 / 5.84
G
C
N
2xR
4x .062 x 45°
I
E
P
M
F
L
H
J
K
2xB
D
.040 x 45°
A
.100 / 2.54
.395 / 10.03 .407 / 10.34
.890 / 22.61 .910 / 23.11
