QFET (R) FQA46N15 / FQA46N15_F109 150V N-Channel MOSFET Features Description * * * * * * * These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficient switched mode power supplies, active power factor correction, electronic lamp ballast based on half bridge topology. 50A, 150V, RDS(on) = 0.042 @VGS = 10 V Low gate charge ( typical 85 nC) Low Crss ( typical 100pF) Fast switching 100% avalanche tested Improved dv/dt capability 175C maximum junction temperature rating D G TO-3PN FQA Series G DS S Absolute Maximum Ratings Symbol Parameter FQA46N15 Units VDSS Drain-Source Voltage 150 V ID Drain Current - Continuous (TC = 25C) 50 A IDM Drain Current - Pulsed - Continuous (TC = 100C) (Note 1) 35.3 A 200 A VGSS Gate-Source Voltage 25 V EAS Single Pulsed Avalanche Energy (Note 2) 650 mJ IAR Avalanche Current (Note 1) 50 A EAR Repetitive Avalanche Energy (Note 1) 25 mJ dv/dt Peak Diode Recovery dv/dt (Note 3) PD Power Dissipation (TC = 25C) TJ, TSTG Operating and Storage Temperature Range TL Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds - Derate above 25C 6.0 V/ns 250 W 1.67 W/C -55 to +175 C 300 C Thermal Characteristics Symbol Parameter RJC Thermal Resistance, Junction-to-Case RCS Thermal Resistance, Case-to-Sink RJA Thermal Resistance, Junction-to-Ambient (c)2007 Fairchild Semiconductor Corporation FQA46N15 / FQA46N15_F109 Rev. A1 1 Typ Max Units -- 0.6 C/W 0.24 -- C/W -- 40 C/W www.fairchildsemi.com FQA46N15 / FQA46N15_F109 150V N-Channel MOSFET August 2007 Device Marking Device Package Reel Size Tape Width Quantity FQA46N15 FQA46N15 TO-3PN -- -- 30 FQA46N15 FQA46N15_F109 TO-3PN -- -- 30 Electrical Characteristics Symbol TC = 25C unless otherwise noted Parameter Test Conditions Min Typ Max Units 150 -- -- V Off Characteristics BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 A BVDSS/ TJ Breakdown Voltage Temperature Coefficient ID = 250 A, Referenced to 25C -- 0.16 -- V/C IDSS Zero Gate Voltage Drain Current VDS = 150 V, VGS = 0 V -- -- 1 A VDS = 120 V, TC = 150C -- -- 10 A IGSSF Gate-Body Leakage Current, Forward VGS = 25 V, VDS = 0 V -- -- 100 nA IGSSR Gate-Body Leakage Current, Reverse VGS = -25 V, VDS = 0 V -- -- -100 nA 2.0 -- 4.0 V -- 0.033 0.042 -- 36 -- S On Characteristics VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 A RDS(on) Static Drain-Source On-Resistance VGS = 10 V, ID = 25A gFS Forward Transconductance VDS = 40 V, ID = 25A (Note 4) Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance VDS = 25 V, VGS = 0 V, f = 1.0 MHz -- 2500 3250 pF -- 520 670 pF -- 100 130 pF -- 35 80 ns -- 320 650 ns -- 210 430 ns -- 200 410 ns -- 85 110 nC -- 15 -- nC -- 41 -- nC Switching Characteristics td(on) Turn-On Delay Time tr Turn-On Rise Time td(off) Turn-Off Delay Time tf Turn-Off Fall Time Qg Total Gate Charge Qgs Gate-Source Charge Qgd VDD = 75 V, ID = 45.6A, RG = 25 (Note 4, 5) VDS = 120 V, ID = 45.6A, VGS = 10 V (Note 4, 5) Gate-Drain Charge Drain-Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain-Source Diode Forward Current -- -- 50 A ISM Maximum Pulsed Drain-Source Diode Forward Current -- -- 200 A VSD Drain-Source Diode Forward Voltage VGS = 0 V, IS =50A -- -- 1.5 V trr Reverse Recovery Time Qrr Reverse Recovery Charge VGS = 0 V, IS = 45.6 A, dIF / dt = 100 A/s (Note 4) -- 130 -- ns -- 0.55 -- C NOTES: 1. Repetitive Rating : Pulse width limited by maximum junction temperature 2. L = 0.43mH, IAS =50A, VDD = 25V, RG = 25 , Starting TJ = 25C 3. ISD 45.6A, di/dt 300A/s, VDD BVDSS, Starting TJ = 25C 4. Pulse Test : Pulse width 300s, Duty cycle 2% 5. Essentially independent of operating temperature FQA46N15 / FQA46N15_F109 Rev. A1 2 www.fairchildsemi.com FQA46N15 / FQA46N15_F109 150V N-Channel MOSFET Package Marking and Ordering Information Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics VGS 15.0 V 10.0 V 8.0 V 7.0 V 6.0 V 5.5 V 5.0 V Bottom : 4.5 V 2 10 ID, Drain Current [A] 10 ID , Drain Current [A] Top : 2 1 10 1 10 175 25 -55 0 10 Notes : 1. VDS = 40V 2. 250 s Pulse Test Notes : 1. 250 s Pulse Test 2. TC = 25 -1 -1 0 10 10 1 10 10 2 4 6 8 10 VGS , Gate-Source Voltage [V] VDS, Drain-Source Voltage [V] Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperatue 2 10 IDR, Reverse Drain Current [A] RDS(on) [], Drain-Source On-Resistance 0.20 0.15 VGS = 10V 0.10 VGS = 20V 0.05 Note : TJ = 25 0.00 1 10 175 25 Notes : 1. VGS = 0V 2. 250 s Pulse Test 0 10 0 40 80 120 160 200 240 0.2 0.4 0.6 Figure 5. Capacitance Characteristics 6000 VGS, Gate-Source Voltage [V] Capacitance [pF] Coss 3000 Crss 2000 1.2 1.4 1.6 1.8 2.0 12 Ciss 4000 1.0 Figure 6. Gate Charge Characteristics Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd 5000 0.8 VSD, Source-Drain voltage [V] ID , Drain Current [A] Notes : 1. VGS = 0 V 2. f = 1 MHz 1000 VDS = 30V 10 VDS = 75V VDS = 120V 8 6 4 2 Note : ID = 45.6 A 0 -1 10 0 10 0 1 10 FQA46N15 / FQA46N15_F109 Rev. A1 0 10 20 30 40 50 60 70 80 90 QG, Total Gate Charge [nC] VDS, Drain-Source Voltage [V] 3 www.fairchildsemi.com FQA46N15 / FQA46N15_F109 150V N-Channel MOSFET Typical Performance Characteristics Figure 7. Breakdown Voltage Variation vs. Temperature Figure 8. On-Resistance Variation vs. Temperature 3.0 RDS(ON), (Normalized) Drain-Source On-Resistance BVDSS, (Normalized) Drain-Source Breakdown Voltage 1.2 1.1 1.0 Notes : 1. VGS = 0 V 2. ID = 250 A 0.9 0.8 -100 -50 0 50 100 150 2.5 2.0 1.5 1.0 Notes : 1. VGS = 10 V 2. ID = 22.8 A 0.5 0.0 -100 200 -50 0 o 50 100 150 200 150 175 o TJ, Junction Temperature [ C] TJ, Junction Temperature [ C] Figure 9. Maximum Safe Operating Area Figure 10. Maximum Drain Current vs. Case Temperature 3 50 10 Operation in This Area is Limited by R DS(on) 40 10 s 100 s ID, Drain Current [A] ID, Drain Current [A] 2 10 1 ms 10 ms DC 1 10 0 10 Notes : 30 20 10 o 1. TC = 25 C o 2. TJ = 175 C 3. Single Pulse -1 10 0 1 10 0 25 2 10 10 50 75 100 125 TC, Case Temperature [] VDS, Drain-Source Voltage [V] Figure 11. Transient Thermal Response Curve Z JC(t), Thermal Response 10 0 D = 0 .5 N o te s : 1 . Z J C ( t) = 0 .6 /W M a x . 2 . D u ty F a c to r , D = t 1 /t 2 3 . T J M - T C = P D M * Z J C ( t) 0 .2 10 -1 0 .1 0 .0 5 PDM 0 .0 2 t1 0 .0 1 10 s in g le p u ls e -2 10 -5 10 -4 10 -3 10 -2 10 -1 t2 10 0 10 1 t 1 , S q u a r e W a v e P u ls e D u r a t io n [ s e c ] FQA46N15 / FQA46N15_F109 Rev. A1 4 www.fairchildsemi.com FQA46N15 / FQA46N15_F109 150V N-Channel MOSFET Typical Performance Characteristics (Continued) FQA46N15 / FQA46N15_F109 150V N-Channel MOSFET Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveforms Unclamped Inductive Switching Test Circuit & Waveforms FQA46N15 / FQA46N15_F109 Rev. A1 5 www.fairchildsemi.com FQA46N15 / FQA46N15_F109 150V N-Channel MOSFET Peak Diode Recovery dv/dt Test Circuit & Waveforms FQA46N15 / FQA46N15_F109 Rev. A1 6 www.fairchildsemi.com FQA46N15 / FQA46N15_F109 150V N-Channel MOSFET Mechanical Dimensions TO-3PN Dimensions in Millimeters FQA46N15 / FQA46N15_F109 Rev. A1 7 www.fairchildsemi.com The following are registered and unregistered trademarks and service marks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx(R) Build it NowTM CorePLUSTM CROSSVOLTTM CTLTM Current Transfer LogicTM EcoSPARK(R) Power247(R) POWEREDGE(R) Power-SPMTM PowerTrench(R) Programmable Active DroopTM QFET(R) QSTM QT OptoelectronicsTM Quiet SeriesTM RapidConfigureTM SMART STARTTM SPM(R) STEALTHTM SuperFETTM SuperSOTTM-3 SuperSOTTM-6 Green FPSTM Green FPSTM e-SeriesTM GTOTM i-LoTM IntelliMAXTM ISOPLANARTM MegaBuckTM MICROCOUPLERTM MicroFETTM MicroPakTM Motion-SPMTM OPTOLOGIC(R) OPTOPLANAR(R) (R) Fairchild(R) Fairchild Semiconductor(R) FACT Quiet SeriesTM FACT(R) FAST(R) FastvCoreTM FPSTM FRFET(R) Global Power ResourceSM (R) PDP-SPMTM Power220(R) SuperSOTTM-8 SyncFETTM The Power Franchise(R) TinyBoostTM TinyBuckTM TinyLogic(R) TINYOPTOTM TinyPowerTM TinyPWMTM TinyWireTM SerDesTM UHC(R) UniFETTM VCXTM DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD'S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. 2. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I30 9 FQA46N15 / FQA46N15_F109 Rev. A1 www.fairchildsemi.com FQA46N15 / FQA46N15_F109 150V N-Channel MOSFET TRADEMARKS