Feb.1999
FS100UMJ-03 OUTLINE DRAWING Dimensions in mm
TO-220
MITSUBISHI Nch POWER MOSFET
FS100UMJ-03
HIGH-SPEED SWITCHING USE
APPLICATION
Motor control, Lamp control, Solenoid control
DC-DC converter, etc.
V
V
A
A
A
A
A
W
°C
°C
g
30
±20
100
400
100
100
400
125
–55 ~ +150
–55 ~ +150
2.0
VGS = 0V
VDS = 0V
L = 30µH
Typical value
Drain-source voltage
Gate-source voltage
Drain current
Drain current (Pulsed)
Avalanche drain current (Pulsed)
Source current
Source current (Pulsed)
Maximum power dissipation
Channel temperature
Storage temperature
Weight
VDSS
VGSS
ID
IDM
IDA
IS
ISM
PD
Tch
Tstg—
Symbol
MAXIMUM RATINGS (Tc = 25°C)
Parameter Conditions Ratings Unit
10.5MAX. 4.5 1.3
f 3.6
3.2
16
12.5MIN.
3.8MAX.
1.0
0.8
2.54 2.54
4.5MAX.
0.5 2.6
7.0
qwe
q GATE
w DRAIN
e SOURCE
r DRAIN
r
D
wr
q
e
¡4V DRIVE
¡VDSS ................................................................................. 30V
¡rDS (ON) (MAX) ............................................................4.7mΩ
¡ID ......................................................................................100A
¡Integrated Fast Recovery Diode (TYP.) .......... 100ns
Feb.1999
V
(BR) DSS
IGSS
IDSS
VGS (th)
rDS (ON)
rDS (ON)
VDS (ON)
yfs
Ciss
Coss
Crss
td (on)
tr
td (off)
tf
VSD
Rth (ch-c)
trr
MITSUBISHI Nch POWER MOSFET
FS100UMJ-03
HIGH-SPEED SWITCHING USE
V
µA
mA
V
mΩ
mΩ
V
S
pF
pF
pF
ns
ns
ns
ns
V
°C/W
ns
30
—
—
1.0
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
1.5
3.5
4.7
0.175
80
8000
2250
1300
55
190
800
470
1.0
—
100
—
±0.1
0.1
2.0
4.7
8.0
0.235
—
—
—
—
—
—
—
—
1.5
1.00
—
ELECTRICAL CHARACTERISTICS (Tch = 25°C)
Drain-source breakdown voltage
Gate-source leakage current
Drain-source leakage current
Gate-source threshold voltage
Drain-source on-state resistance
Drain-source on-state resistance
Drain-source on-state voltage
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Source-drain voltage
Thermal resistance
Reverse recovery time
Symbol UnitParameter Test conditions Limits
Min. Typ. Max.
ID = 1mA, VGS = 0V
VGS = ±20V, VDS = 0V
VDS = 30V, VGS = 0V
ID = 1mA, VDS = 10V
ID = 50A, VGS = 10V
ID = 50A, VGS = 4V
ID = 50A, VGS = 10V
ID = 50A, VDS = 10V
VDS = 10V, VGS = 0V, f = 1MHz
VDD = 15V, ID = 50A, VGS = 10V, RGEN = RGS = 50Ω
IS = 50A, VGS = 0V
Channel to case
IS = 50A, dis/dt = –50A/µs
PERFORMANCE CURVES
0
40
80
120
160
200
0 20050 100 150
POWER DISSIPATION DERATING CURVE
CASE TEMPERATURE T
C
(°C)
POWER DISSIPATION P
D
(W)
MAXIMUM SAFE OPERATING AREA
DRAIN-SOURCE VOLTAGE V
DS
(V)
DRAIN CURRENT I
D
(A)
OUTPUT CHARACTERISTICS
(TYPICAL)
DRAIN CURRENT I
D
(A)
DRAIN-SOURCE VOLTAGE V
DS
(V)
OUTPUT CHARACTERISTICS
(TYPICAL)
DRAIN CURRENT I
D
(A)
DRAIN-SOURCE VOLTAGE V
DS
(V)
10
0
5
7
10
1
2
3
5
7
10
2
2
3
5
7
10
0
357 2 10
1
357 2 10
2
357
2
3
5
23
T
C
= 25°C
Single Pulse
tw = 10ms
100ms
10ms
1ms
DC
0
20
40
60
80
100
0 0.2 0.4 0.6 0.8 1.0
V
GS
= 10V
T
C
= 25°C
Pulse Test
4V
5V
6V
3V
2V
0
10
20
30
40
50
0 0.1 0.2 0.3 0.4 0.5
3V
4V
2V
V
GS
= 10V
5V
T
C
= 25°C
Pulse Test
6V
Feb.1999
MITSUBISHI Nch POWER MOSFET
FS100UMJ-03
HIGH-SPEED SWITCHING USE
0
20
40
60
80
100
0246810
T
C
= 25°C
V
DS
= 10V
Pulse Test
10
3
3
5
7
10
4
2
3
5
7
10
5
2
3
2
5
7
10
0
210
1
357357 2 10
2
357 23
2
Ciss
Coss
Crss
Tch = 25°C
f = 1MH
Z
V
GS
= 0V
10
1
10
2
2
3
5
7
10
3
2
3
5
7
10
4
2
3
5
7
10
0
10
1
23457 10
2
23457
t
d(off)
t
d(on)
t
r
Tch = 25°C
V
DD
= 15V
V
GS
= 10V
R
GEN
= R
GS
= 50Ω
t
f
ON-STATE VOLTAGE VS.
GATE-SOURCE VOLTAGE
(TYPICAL)
GATE-SOURCE VOLTAGE V
GS
(V)
DRAIN-SOURCE ON-STATE
VOLTAGE V
DS (ON)
(V)
ON-STATE RESISTANCE VS.
DRAIN CURRENT
(TYPICAL)
DRAIN CURRENT I
D
(A)
DRAIN-SOURCE ON-STATE
RESISTANCE r
DS (ON)
(mΩ)
TRANSFER CHARACTERISTICS
(TYPICAL)
GATE-SOURCE VOLTAGE V
GS
(V)
DRAIN CURRENT I
D
(A)
FORWARD TRANSFER ADMITTANCE
VS.DRAIN CURRENT
(TYPICAL)
DRAIN CURRENT I
D
(A)
FORWARD TRANSFER
ADMITTANCE y
fs
(S)
SWITCHING CHARACTERISTICS
(TYPICAL)
DRAIN-SOURCE VOLTAGE V
DS
(V)
CAPACITANCE VS.
DRAIN-SOURCE VOLTAGE
(TYPICAL)
DRAIN CURRENT I
D
(A)
CAPACITANCE
Ciss, Coss, Crss (pF)
SWITCHING TIME (ns)
10
0
10
1
23457 10
2
23457
10
0
10
1
2
3
4
5
7
10
2
2
3
4
5
7
T
C
= 25°C
75°C
125°C
V
DS
= 10V
Pulse Test
0
2
4
6
8
10
10
0
210
1
357 2 10
2
357 2 10
3
357
V
GS
= 4V
10V
T
C
= 25°C
Pulse Test
0
0.2
0.4
0.6
0.8
1.0
0246810
T
C
= 25°C
Pulse Test
I
D
= 100A
70A
50A
Feb.1999
MITSUBISHI Nch POWER MOSFET
FS100UMJ-03
HIGH-SPEED SWITCHING USE
GATE-SOURCE VOLTAGE
VS.GATE CHARGE
(TYPICAL)
GATE CHARGE Q
g
(nC)
GATE-SOURCE VOLTAGE V
GS
(V)
SOURCE-DRAIN DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
SOURCE-DRAIN VOLTAGE V
SD
(V)
SOURCE CURRENT I
S
(A)
CHANNEL TEMPERATURE Tch (°C)
DRAIN-SOURCE ON-STATE RESISTANCE r
DS (ON)
(t°C)
THRESHOLD VOLTAGE VS.
CHANNEL TEMPERATURE
(TYPICAL)
GATE-SOURCE THRESHOLD
VOLTAGE V
GS (th)
(V)
TRANSIENT THERMAL IMPEDANCE
CHARACTERISTICS
CHANNEL TEMPERATURE Tch (°C)
BREAKDOWN VOLTAGE VS.
CHANNEL TEMPERATURE
(TYPICAL)
PULSE WIDTH t
w
(s)
TRANSIENT THERMAL IMPEDANCE Z
th
(ch–c)
(°C/W)
ON-STATE RESISTANCE VS.
CHANNEL TEMPERATURE
(TYPICAL)
DRAIN-SOURCE ON-STATE RESISTANCE r
DS (ON)
(25°C)
CHANNEL TEMPERATURE Tch (°C)
DRAIN-SOURCE BREAKDOWN VOLTAGE V
(BR) DSS
(t°C)
DRAIN-SOURCE BREAKDOWN VOLTAGE V
(BR) DSS
(25°C)
0
2
4
6
8
10
0 40 80 120 160 200
V
DS
= 15V
20V
25V
Tch = 25°C
I
D
= 100A
10
–1
10
0
2
3
4
5
7
10
1
2
3
4
5
7
–50 0 50 100 150
V
GS
= 10V
I
D
= 1/2I
D
Pulse Test
0
0.8
1.6
2.4
3.2
4.0
–50 0 50 100 150
V
DS
= 10V
I
D
= 1mA
0.4
0.6
0.8
1.0
1.2
1.4
–50 0 50 100 150
V
GS
= 0V
I
D
= 1mA
0
25
50
75
100
0 0.4 0.8 1.2 1.6 2.0
T
C
= 125°C
75°C
25°C
V
GS
= 0V
Pulse Test
10
–2
10
–1
2
3
5
7
10
0
2
3
5
7
10
1
2
3
5
7
10
–4
23 57 23 57 23 57 23 57
10
0
23 57
10
1
23 57
10
2
10
–3
10
–2
10
–1
P
DM
tw
D
=
T
tw
T
D = 1.0
0.5
0.2
0.1
0.05
0.02
0.01
Single Pulse
