VRRM IPULSE VF VDcmax = = = = 13.5 60 7.89 12 kV kA V kV High Voltage High Current Diode for Pulsed Power Applications 5SDA 27Z1350 Features Multichip Design with 6 Wafers in Series For Single Pulse Applications Voltage Sharing Resistors included Compact Design Glazed Ceramic Presspack Housing High Reliability VRRM Repetitive reverse blocking voltage VDC Permanent DC voltage for 100 FIT failure rate 9 kV At Tj 50 C. Ambient cosmic radiation at sea level in open air. VDC Max. DC voltage 12 kV For 60 sec at Tj 50C IPULSE Max. Pulse Current 60 kA Half sine wave, Tj 50C, tp 500 s di/dt Max. current rate of rise 2 It Limiting load integral VF Forward voltage drop RP Voltage sharing resistors 13.5 kV Tvj = 0 ... 125C 500 A/s Single Pulse 6 0,9 x10 A2s 7.89 V 1 M ABB Switzerland Ltd reserves the right to change specifications without notice tp = 500 s, Tj = 50 C IF = 4000 A, Tj = 50 C 8,5 W / wafer level Pulse Power Device Mechanical Data min. 17 kN max. 24 kN Dp Pole-piece diameter 47 mm H Housing thickness 51 mm M Weight 1,0 kg DS Surface creepage distance 42 mm Air strike distance 29 mm 122 ABB Switzerland Ltd, Semiconductors Pulse Power Fabrikstrasse 3 CH-5600 Lenzburg, Switzerland Tel.: +41-58-586-1742 Fax: +41-58-586-1310 E-Mail: pulsepower.abbsem@ch.abb.com Internet: www.abb.com/semiconductors 5SDA 27Z1350