VRRM = 13.5 kV
IPULSE =60kA
VF=7.89V
VDcmax =12kV
Features
Multichip Design wi th 6 Wafers in Series
For Single Pulse Applications
Voltage Sharing Resistors included
Compact Design
Glazed Ceramic Presspack Housing
High Reliability
VRRM Repetitive reverse blocking voltage 13.5 kV Tvj = 0 … 125°C
VDC Permanent DC voltage for 100
FIT failure rate 9kV At Tj ≤ 50 °C. Ambient cosmic r adiat ion
at sea level in open air.
VDC Max. DC volt age 12 kV For ≤ 60 sec at Tj ≤ 50°C
IPULSE Max. Pulse Current 60 kA Half sine wave, Tj ≤ 50°C, tp ≤ 500 µs
di/dt Max. curr ent rate of r ise 500 A/µsSingle Pulse
I2t Limiting load integral 0,9 x106A2stp = 500 µs, Tj = 50 °C
VFForward voltage drop ≤ 7.89 VI
F = 4000 A, Tj = 50 °C
RPVoltage sharing resistors 1 MΩ8,5 W / wafer level
ABB Switzerland Ltd reserves the right to change specificati ons without notice
High Voltage High Current Diode
for Pulsed Power Applications
5SDA 27Z1350
Pulse Power Device 5SDA 27Z1350
Mechanical Data min. 17 kN
max. 24 kN
DpPole-piece diameter 47 mm
H Housing thickness 51 mm
MWeight 1,0kg
DSSurface cr eepage distance 42 mm
Air strike distance 29 mm
122
ABB Switzerland Lt d, Semi conductors
Pulse Power
Fabri kstra sse 3
CH-5600 Lenzburg, Switzerland
Tel.: +41-58-586-1742
Fax: +41-58-586-1310
E-Mail: pulsepower.abbsem@ch.abb.com
Internet: www.abb.com/semiconductors
