TYP 212 --->TYP 2012
April 1995
SCR FOR OVERVOLTAGE PROTECTION
Symbol Parameter Value Unit
IT(RMS) RMS on-state current
(180°conduction angle, single phase circuit) Tc = 110 °C12 A
I
T(AV) Average on-state current
(180°conduction angle, single phase circuit) Tc = 110 °C8 A
I
TSM Non repetitive surge peak on-state current
( Tj initial = 25°C) tp = 8.3 ms 315 A
tp = 10 ms 300
I2tI
2
t value tp = 10 ms 450 A2s
ITM Non repetitive surge peak on-state current
( Tj initial = 25°C)
Exponential pulse wave form
tp = 1 ms 750 A
dI/dt Critical rate of rise of on-state current
Gate supply : IG= 100 mA diG/dt = 1 A/µs100 A/µs
Tstg
Tj Storage and operating junction temperature range - 40 to + 150
- 40 to + 125 °C
°C
Tl Maximum lead temperature for soldering during 10 s at 4.5 mm
from case 260 °C
TO220AB
(Plastic)
KAG
.HIGH SURGE CURRENT CAPABILITY
.HIGH dI/dtRATING
.HIGH STABILITYAND RELIABILITY
DESCRIPTION
Symbol Parameter TYP Unit
212 512 1012 2012
VDRM
VRRM Repetitive peak off-state voltage
Tj = 125 °C25 50 100 200 V
ABSOLUTE RATINGS (limiting values)
FEATURES
The TYP 212 ---> 1012 Family uses high perform-
ance glass passivated chips technology.
These Silicon Controlled Rectifiers are designed for
overvoltage protection in crowbar circuits applica-
tion.
1/5
GATE CHARACTERISTICS (maximumvalues)
Symbol Parameter Value Unit
Rth (j-a) Junction to ambient 60 °C/W
Rth (j-c) DC Junction to case for DC 1.3 °C/W
Symbol Test Conditions Value Unit
IGT VD=12V (DC) RL=33ΩTj=25°C MAX 30 mA
VGT VD=12V (DC) RL=33ΩTj=25°C MAX 1.5 V
VGD VD=VDRM RL=3.3kΩTj= 125°C MIN 0.2 V
tgt VD=VDRM IG= 200mA
dIG/dt = 1.5A/µsTj=25°C TYP 1 µs
ILIG= 1.2 IGT Tj=25°C TYP 60 mA
IHIT= 500mA gate open Tj=25°C MAX 50 mA
VTM ITM= 50A tp= 380µs Tj=25°C MAX 1.5 V
IDRM
IRRM VDRM Rated
VRRM Rated Tj=25°C MAX 0.01 mA
Tj= 125°C2
dV/dt Linear slope up to VD=67%VDRM
gate open Tj= 125°C MIN 200 V/µs
tq VD=67%VDRM ITM= 50A VR= 25V
dITM/dt=30 A/µsdV
D
/dt= 50V/µsTj= 125°C TYP 100 µs
PG (AV) =1W P
GM = 10W (tp = 20 µs) IFGM =4A(tp=20µs) VRGM =5V.
ELECTRICAL CHARACTERISTICS
THERMAL RESISTANCES
TYP 212 ---> TYP 2012
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Fig.1 : Maximum average power dissipation versus
average on-state current. Fig.2 : Correlation between maximum average power
dissipation and maximum allowable temperatures (Tamb
and Tcase) for different thermal resistances heatsink +
contact.
Fig.5 : Relative variation of gate trigger current versus
junction temperature. Fig.6 : Non repetitive surge peak on-state current
versus number of cycles.
Fig.3 : Average on-state current versus case
temperature.
1E-3 1E-2 1E-1 1E+0 1E+1 1E+2 5E+2
0.01
0.1
1Zth/Rth
Zth(j-c)
Zth(j-a)
tp(s)
Fig.4 : Relative variation of thermal impedance versus
pulse duration.
TYP 212 ---> TYP 2012
3/5
Fig.7 : Non repetitive surge peak on-state current for a
sinusoidal pulse with width : t ≤10 ms, and
corresponding value of I2t.
Fig.8 : On-state characteristics (maximum values).
Fig.9 : Peak capacitor discharge current versus pulse
width. Fig.10 : Allowable peak capacitor discharge current
versus initial junction temparature.
TYP 212 ---> TYP 2012
4/5
PACKAGE MECHANICAL DATA
TO220AB Plastic
Cooling method : C
Marking : type number
Weight : 2.3 g
Recommended torque value : 0.8 m.N.
Maximum torque value : 1 m.N.
A
GJH
D
B
C
M
L
F
O
P
=N=
I
REF. DIMENSIONS
Millimeters Inches
Min. Max. Min. Max.
A 10.00 10.40 0.393 0.409
B 15.20 15.90 0.598 0.625
C 13.00 14.00 0.511 0.551
D 6.20 6.60 0.244 0.259
F 3.50 4.20 0.137 0.165
G 2.65 2.95 0.104 0.116
H 4.40 4.60 0.173 0.181
I 3.75 3.85 0.147 0.151
J 1.23 1.32 0.048 0.051
L 0.49 0.70 0.019 0.027
M 2.40 2.72 0.094 0.107
N 4.80 5.40 0.188 0.212
O 1.14 1.70 0.044 0.066
P 0.61 0.88 0.024 0.034
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability
for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may
result from its use. No license is granted by implication orotherwise under any patent or patent rights of SGS-THOMSON Microelectronics.
Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all
information previously supplied.
SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems
without express written approval of SGS-THOMSON Microelectronics.
1995 SGS-THOMSON Microelectronics - Printed in Italy - All rights reserved.
SGS-THOMSON Microelectronics GROUP OF COMPANIES
Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Nether-
lands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A.
TYP 212 ---> TYP 2012
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