A D V A N C E D S E M I C O N D U C T O R, I N C. REV. A
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 1/1
Specif i cations are subjec t to change without notice.
CHARACTERISTICS TC = 25 °C
SYMBOL NONETEST CONDITIO NS MINIMUM TYPICAL MAXIMUM UNITS
BVCES IC = 200 mA 65 V
BVCEO IC = 200 mA 35 V
BVEBO IE = 10 Ma 4.0 V
ICES VCE = 30 V 5.0 mA
ICBO VCB = 30 V 30 mA
hFE VCE = 5.0 V IC = 500 mA 5.0 ---
COB VCE = 28 V f = 1.0 MHz 130 pF
PG
η
ηη
ηC VCC = 28 V POUT = 100 W f = 150 MHz 6.0
60
dB
%
NPN SILICON RF POWER TRANSISTOR
2N6166
PACKAGE STYLE .500 4L FLG
ORDER CODE: ASI10790
DESCRIPTION:
The ASI 2N6166 is Designed to
operate in a collector m odulated VHF
Power Amplifier Applications up to 200
MHz.
FEATURES:
• ηC = 60 % min. @ 100 W/150 MHz
• PG = 6.0 dB min. @ 100 W/150 MHz
• Omnigold™ Metalization System
MAXIMUM RATINGS
IC 9.0 A
VCBO 65 V
VEBO 4.0 V
PDISS 117 W @ TC = 25 °C
TJ -65 °C to +200 °C
TSTG -65 °C to +150 °C
θ
θθ
θJC 1.5 °C/W
MINIMUM
inches / mm
.220 / 5.59
.720 / 18.28
.125 / 3.18
.245 / 6.22
.970 / 24.64
B
C
D
E
F
G
A
MAXIMUM
.255 / 6.48
.980 / 24.89
.7.30 / 18.54
inches / mm
.230 / 5.84
H.003 / 0.08 .007 / 0.18
DIM
K
L
I
J
.090 / 2.29
.150 / 3.81
.980 / 24.89
.110 / 2.79
.175 / 4.45
1.050 / 26.67
H
IK
J
.112x45°
FULL R
C
E
B
G
D F
AL
Ø.125 NOM .
.125 / 3.18
.495 / 12.57 .505 / 12.83
.280 / 7.11
C
B
E
E
