Switching and General Purpose Transistors an7 18Asiticon) Veen = 50 rv 2N956 f; = 300 MHz Typ 2N1613 QNI711 (JAN 2N1613 AND 2N1711 Available) CASE 22 CASE 31 (TO-18) (TO-5) 2N718A 2N1613 2N956 2N1711 Collector connected to case NPN silicon annular Star transistors for high-speed switching and DC to UHF amplifier applications. MAXIMUM RATINGS . 2N718A 2N1613 : Rating Symbol N96 ONITLI Unit Collector-Emitter Voltage VoER 50 Vde Collector-Base Voltage Yop 15 Vde Emitter-Base Voltage Ves 7.0 Vde Total Device Dissipation @ Ta = 25C Pp 500 800 mW Derate above 25C 2.86 4.57 mWw/C Total Device Dissipation @ To = 25C Py 1.8 3.0 Watts Derate above 25C 10.3 17.1 mW/C Operating and Storage Junction Temperature Range Ty Tete -65 to +200 C 8-30