1
MRF1517T1MOTOROLA RF DEVICE DATA
The RF MOSFET Line
N–Channel Enhancement–Mode Lateral MOSFETs
The MRF1517T1 is designed for broadband commercial and industrial
applications at frequencies to 520 MHz. The high gain and broadband
performance of this device makes it ideal for large–signal, common source
amplifier applications in 7.5 volt portable FM equipment.
•Specified Performance @ 520 MHz, 7.5 Volts
Output Power — 8 Watts
Power Gain — 11 dB
Efficiency — 55%
•Characterized with Series Equivalent Large–Signal
Impedance Parameters
•Excellent Thermal Stability
•Capable of Handling 20:1 VSWR, @ 9.5 Vdc,
520 MHz, 2 dB Overdrive
•Broadband UHF/VHF Demonstration Amplifier
Information Available Upon Request
•RF Power Plastic Surface Mount Package
•Available in Tape and Reel.
T1 Suffix = 1,000 Units per 12 mm, 7 Inch Reel.
MAXIMUM RATINGS
Rating Symbol Value Unit
Drain–Source Voltage (1) VDSS 25 Vdc
Gate–Source Voltage VGS ±20 Vdc
Drain Current — Continuous ID4 Adc
Total Device Dissipation @ TC = 25°C (2)
Derate above 25°C
PD62.5
0.50
Watts
W/°C
Storage Temperature Range Tstg –65 to +150 °C
Operating Junction Temperature TJ150 °C
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, Junction to Case RθJC 2°C/W
(1) Not designed for 12.5 volt applications.
(2) Calculated based on the formula PD =
NOTE – CAUTION – MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
Order this document
by MRF1517/D
SEMICONDUCTOR TECHNICAL DATA
520 MHz, 8 W, 7.5 V
LATERAL N–CHANNEL
BROADBAND
RF POWER MOSFET
CASE 466–02, STYLE 1
(PLD–1.5)
PLASTIC
Motorola, Inc. 2002
TJ–TC
RθJC
REV 1
MRF1517T1
2
MOTOROLA RF DEVICE DATA
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Zero Gate Voltage Drain Current
(VDS = 35 Vdc, VGS = 0)
IDSS — — 1µAdc
Gate–Source Leakage Current
(VGS = 10 Vdc, VDS = 0)
IGSS — — 1µAdc
ON CHARACTERISTICS
Gate Threshold Voltage
(VDS = 7.5 Vdc, ID = 120 µAdc)
VGS(th) 1.0 1.7 2.1 Vdc
Drain–Source On–Voltage
(VGS = 10 Vdc, ID = 1 Adc)
VDS(on) —0.5 —Vdc
Forward Transconductance
(VDS = 10 Vdc, ID = 2 Adc)
gfs 0.9 — — S
DYNAMIC CHARACTERISTICS
Input Capacitance
(VDS = 7.5 Vdc, VGS = 0, f = 1 MHz)
Ciss —66 —pF
Output Capacitance
(VDS = 7.5 Vdc, VGS = 0, f = 1 MHz)
Coss —38 —pF
Reverse Transfer Capacitance
(VDS = 7.5 Vdc, VGS = 0, f = 1 MHz)
Crss —6—pF
FUNCTIONAL TESTS (In Motorola Test Fixture)
Common–Source Amplifier Power Gain
(VDD = 7.5 Vdc, Pout = 8 Watts, IDQ = 150 mA, f = 520 MHz)
Gps 10 11 —dB
Drain Efficiency
(VDD = 7.5 Vdc, Pout = 8 Watts, IDQ = 150 mA, f = 520 MHz)
η50 55 —%
3
MRF1517T1MOTOROLA RF DEVICE DATA
Figure 1. 480 – 520 MHz Broadband Test Circuit
B1, B2 Short Ferrite Bead, Fair Rite Products
(2743021446)
C1 300 pF, 100 mil Chip Capacitor
C2, C3, C4, C10,
C12, C13 0 to 20 pF, Trimmer Capacitor
C5, C11 43 pF, 100 mil Chip Capacitor
C6, C18 120 pF, 100 mil Chip Capacitor
C7, C15 10 µF, 50 V Electrolytic Capacitor
C8, C16 0.1 µF, 100 mil Chip Capacitor
C9, C17 1,000 pF, 100 mil Chip Capacitor
C14 330 pF, 100 mil Chip Capacitor
L1 55.5 nH, 5 Turn, Coilcraft
N1, N2 Type N Flange Mount
R1 15 Ω, 0805 Chip Resistor
R2 1.0 kΩ, 1/8 W Resistor
R3 33 kΩ, 1/2 W Resistor
Z1 0.315″ x 0.080″ Microstrip
Z2 1.415″ x 0.080″ Microstrip
Z3 0.322″ x 0.080″ Microstrip
Z4 0.022″ x 0.080″ Microstrip
Z5, Z6 0.260″ x 0.223″ Microstrip
Z7 0.050″ x 0.080″ Microstrip
Z8 0.625″ x 0.080″ Microstrip
Z9 0.800″ x 0.080″ Microstrip
Z10 0.589″ x 0.080″ Microstrip
Board Glass Teflon, 31 mils, 2 oz. Copper
TYPICAL CHARACTERISTICS, 480 – 520 MHz
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Figure 2. Output Power versus Input Power
)* !" #!$%
Figure 3. Input Return Loss versus
Output Power
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,-.
,-.
(
,-.
,-.
,-.
/ + '0 / + '0
MRF1517T1
4
MOTOROLA RF DEVICE DATA
TYPICAL CHARACTERISTICS, 480 – 520 MHz
Pin = 27 dBm
/ + '0
!" #!$%
"11&$&""2%
"11&$&""2%
Figure 4. Gain versus Output Power
!" #!$%
Figure 5. Drain Efficiency versus Output Power
$&#'%
Figure 6. Output Power versus Biasing Current
4 $ " #5$%
Figure 7. Drain Efficiency versus Biasing Current
4 $ " #5$%
Figure 8. Output Power versus Supply Voltage
2 $" #%
Figure 9. Drain Efficiency versus Supply Voltage
2 $" #%
&&!"&#!$%
&&!"&#!$%
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,-.
,-.
,-.
,-.
,-.
,-.
,-.
,-. ,-.
,-.
,-.
,-.
,-.
,-.
,-.
,-.
,-.
,-.
/ + '0 / + '0
Pin = 27 dBm
/ + '0
Pin = 27 dBm
4 / 5$
Pin = 27 dBm
4 / 5$
5
MRF1517T1MOTOROLA RF DEVICE DATA
Figure 10. 400 – 440 MHz Broadband Test Circuit
B1, B2 Short Ferrite Bead, Fair Rite Products
(2743021446)
C1, C13 300 pF, 100 mil Chip Capacitor
C2, C3, C4, C10,
C11, C12 0 to 20 pF, Trimmer Capacitor
C5, C17 130 pF, 100 mil Chip Capacitor
C6, C14 10 µF, 50 V Electrolytic Capacitor
C7, C15 0.1 µF, 100 mil Chip Capacitor
C8, C16 1,000 pF, 100 mil Chip Capacitor
C9 33 pF, 100 mil Chip Capacitor
L1 55.5 nH, 5 Turn, Coilcraft
N1, N2 Type N Flange Mount
R1 12 Ω, 0805 Chip Resistor
R2 1.0 kΩ, 1/8 W Resistor
R3 33 kΩ, 1/2 W Resistor
Z1 0.617″ x 0.080″ Microstrip
Z2 0.723″ x 0.080″ Microstrip
Z3 0.513″ x 0.080″ Microstrip
Z4, Z5 0.260″ x 0.223″ Microstrip
Z6 0.048″ x 0.080″ Microstrip
Z7 0.577″ x 0.080″ Microstrip
Z8 1.135″ x 0.080″ Microstrip
Z9 0.076″ x 0.080″ Microstrip
Board Glass Teflon, 31 mils, 2 oz. Copper
TYPICAL CHARACTERISTICS, 400 – 440 MHz
!" #!$%
&&"&&#'%
(
(
(
(
Figure 11. Output Power versus Input Power
)* !" #!$%
Figure 12. Input Return Loss versus Output Power
&&!"&#!$%
++
,-.
+ ++
,-.
(
,-.
,-.
,-.
,-.
/ + '0 / + '0
MRF1517T1
6
MOTOROLA RF DEVICE DATA
TYPICAL CHARACTERISTICS, 400 – 440 MHz
!" #!$%
"11&$&""2%
"11&$&""2%
Figure 13. Gain versus Output Power
!" #!$%
Figure 14. Drain Efficiency versus Output Power
$&#'%
Figure 15. Output Power versus Biasing Current
4 $ " #5$%
Figure 16. Drain Efficiency versus Biasing Current
4 $ " #5$%
Figure 17. Output Power versus Supply Voltage
2 $" #%
Figure 18. Drain Efficiency versus Supply Voltage
2 $" #%
&&!"&#!$%
&&!"&#!$%
"11&$&""2%
,-. ,-.
,-.
,-.
,-.
,-.
,-.
,-.
,-.
,-.
,-.
,-.
,-.
,-.
,-.
,-.
,-.
,-.
Pin = 25.5 dBm
/ + '0
/ + '0 / + '0
Pin = 25.5 dBm
4 / 5$
Pin = 25.5 dBm
/ + '0
Pin = 25.5 dBm
4 / 5$
7
MRF1517T1MOTOROLA RF DEVICE DATA
Figure 19. 440 – 480 MHz Broadband Test Circuit
B1, B2 Short Ferrite Bead, Fair Rite Products
(2743021446)
C1 240 pF, 100 mil Chip Capacitor
C2, C3, C4, C10,
C11, C12 0 to 20 pF, Trimmer Capacitor
C5, C17 130 pF, 100 mil Chip Capacitor
C6, C14 10 mF, 50 V Electrolytic Capacitor
C7, C15 0.1 mF, 100 mil Chip Capacitor
C8, C16 1,000 pF, 100 mil Chip Capacitor
C9 39 pF, 100 mil Chip Capacitor
C13 330 pF, 100 mil Chip Capacitor
L1 55.5 nH, 5 Turn, Coilcraft
N1, N2 Type N Flange Mount
R1 15 Ω, 0805 Chip Resistor
R2 1.0 kΩ, 1/8 W Resistor
R3 33 kΩ, 1/2 W Resistor
Z1 0.471″ x 0.080″ Microstrip
Z2 1.082″ x 0.080″ Microstrip
Z3 0.372″ x 0.080″ Microstrip
Z4, Z5 0.260″ x 0.223″ Microstrip
Z6 0.050″ x 0.080″ Microstrip
Z7 0.551″ x 0.080″ Microstrip
Z8 0.825″ x 0.080″ Microstrip
Z9 0.489″ x 0.080″ Microstrip
Board Glass Teflon, 31 mils, 2 oz. Copper
TYPICAL CHARACTERISTICS, 440 – 480 MHz
!" #!$%
&&"&&#'%
(
(
(
(
Figure 20. Output Power versus Input Power
)* !" #!$%
Figure 21. Input Return Loss versus Output Power
+
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+
+
,-.
,-.
++
,-.
(
,-.
,-.
,-.
/ + '0 / + '0
MRF1517T1
8
MOTOROLA RF DEVICE DATA
TYPICAL CHARACTERISTICS, 440 – 480 MHz
!" #!$%
"11&$&""2%
"11&$&""2%
Figure 22. Gain versus Output Power
!" #!$%
Figure 23. Drain Efficiency versus Output Power
$&#'%
Figure 24. Output Power versus Biasing Current
4 $ " #5$%
Figure 25. Drain Efficiency versus Biasing Current
4 $ " #5$%
Figure 26. Output Power versus Supply Voltage
2 $" #%
Figure 27. Drain Efficiency versus Supply Voltage
2 $" #%
&&!"&#!$%
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,-.
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,-.
,-.
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,-.
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,-.
,-.
,-.
,-.
,-.
,-.
,-.
,-.
Pin = 27.5 dBm
/ + '0 / + '0
Pin = 27.5 dBm
Pin = 27.5 dBm Pin = 27.5 dBm
9
MRF1517T1MOTOROLA RF DEVICE DATA
Zin = Complex conjugate of source
impedance.
ZOL* = Complex conjugate of the load
impedance at given output
power, voltage, frequency,
and ηD > 50 %.
Note: ZOL* was chosen based on tradeoffs between gain, drain efficiency, and device stability.
Figure 28. Series Equivalent Input and Output Impedance
Zin = Complex conjugate of source
impedance.
ZOL* = Complex conjugate of the load
impedance at given output
power, voltage, frequency,
and ηD > 50 %.
f
MHz
Zin
Ω
ZOL*
Ω
440 1.62 +j3.41 3.25 +j0.98
Zin = Complex conjugate of source
impedance.
ZOL* = Complex conjugate of the load
impedance at given output
power, voltage, frequency,
and ηD > 50 %.
/ + 4 / 5$ / !
460 1.85 +j3.35 3.05 +j0.93
480 1.91 +j3.31 2.54 +j0.84
f
MHz
Zin
Ω
ZOL*
Ω
480 1.06 +j1.82 3.51 +j0.99
/ + 4 / 5$ / !
500 0.97 +j2.01 2.82 +j0.75
520 0.975 +j2.37 1.87 +j1.03
f
MHz
Zin
Ω
ZOL*
Ω
400 1.96 +j3.32 2.52 +j0.39
420 2.31 +j3.56 2.61 +j0.64
440 1.60 +j3.45 2.37 +j1.04
/ Ω
)*
1 / ,-.
/ Ω
)*
1 / ,-.
6
/ Ω
)*
1 / ,-.
6
6
1 / ,-.
/ + 4 / 5$ / !
1 / ,-.
1 / ,-.
Zin ZOL*
*7
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*';= ;@
7
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MRF1517T1
10
MOTOROLA RF DEVICE DATA
Table 1. Common Source Scattering Parameters (VDD = 7.5 Vdc)
IDQ = 150 mA
f
MH
S11 S21 S12 S22
MHz |S11|∠φ |S21|∠φ |S12|∠φ |S22|∠φ
50 0.84 –152 17.66 97 0.016 0 0.77 –167
100 0.84 –164 8.86 85 0.016 5 0.78 –172
200 0.86 –170 4.17 72 0.015 –5 0.79 –173
300 0.88 –171 2.54 62 0.014 –8 0.80 –172
400 0.90 –172 1.72 55 0.013 –25 0.83 –172
500 0.92 –172 1.28 50 0.013 –10 0.84 –172
600 0.94 –173 0.98 46 0.014 –22 0.86 –171
700 0.95 –173 0.76 41 0.010 –30 0.86 –172
800 0.96 –174 0.61 38 0.011 –14 0.86 –171
900 0.96 –175 0.50 33 0.011 –31 0.85 –172
1000 0.97 –175 0.40 31 0.006 55 0.88 –171
IDQ = 800 mA
f
MH
S11 S21 S12 S22
MHz |S11|∠φ |S21|∠φ |S12|∠φ |S22|∠φ
50 0.90 –165 20.42 94 0.018 1 0.76 –164
100 0.89 –172 10.20 87 0.015 –7 0.77 –170
200 0.90 –175 4.96 79 0.015 –12 0.77 –172
300 0.90 –176 3.17 73 0.017 –2 0.80 –171
400 0.91 –176 2.26 67 0.013 1 0.82 –172
500 0.92 –176 1.75 63 0.011 –6 0.83 –171
600 0.93 –176 1.39 59 0.012 –31 0.85 –171
700 0.94 –176 1.14 55 0.015 –34 0.88 –171
800 0.94 –176 0.93 51 0.008 –22 0.87 –171
900 0.95 –177 0.78 45 0.007 2 0.87 –172
1000 0.96 –177 0.65 43 0.008 –40 0.90 –170
IDQ = 1.5 A
f
MH
S11 S21 S12 S22
MHz |S11|∠φ |S21|∠φ |S12|∠φ |S22|∠φ
50 0.92 –165 19.90 95 0.017 3 0.76 –164
100 0.90 –172 9.93 88 0.018 2 0.77 –170
200 0.91 –176 4.84 80 0.016 –4 0.77 –172
300 0.91 –176 3.10 74 0.014 –11 0.80 –172
400 0.92 –176 2.22 68 0.014 –14 0.81 –172
500 0.93 –176 1.73 64 0.016 –8 0.83 –171
600 0.94 –176 1.39 61 0.013 –24 0.85 –171
700 0.94 –176 1.12 56 0.013 –24 0.87 –171
800 0.95 –176 0.93 52 0.009 –12 0.87 –171
900 0.96 –177 0.78 46 0.008 10 0.87 –173
1000 0.97 –177 0.64 44 0.012 4 0.89 –169
11
MRF1517T1MOTOROLA RF DEVICE DATA
APPLICATIONS INFORMATION
DESIGN CONSIDERATIONS
This device is a common–source, RF power, N–Channel
enhancement mode, Lateral Metal–Oxide Semiconductor
Field–Effect Transistor (MOSFET). Motorola Application
Note AN211A, “FETs in Theory and Practice”, is suggested
reading for those not familiar with the construction and char-
acteristics of FETs.
This surface mount packaged device was designed pri-
marily for VHF and UHF portable power amplifier applica-
tions. Manufacturability is improved by utilizing the tape and
reel capability for fully automated pick and placement of
parts. However, care should be taken in the design process
to insure proper heat sinking of the device.
The major advantages of Lateral RF power MOSFETs in-
clude high gain, simple bias systems, relative immunity from
thermal runaway, and the ability to withstand severely mis-
matched loads without suffering damage.
MOSFET CAPACITANCES
The physical structure of a MOSFET results in capacitors
between all three terminals. The metal oxide gate structure
determines the capacitors from gate–to–drain (Cgd), and
gate–to–source (Cgs). The PN junction formed during fab-
rication of the RF MOSFET results in a junction capacitance
from drain–to–source (Cds). These capacitances are charac-
terized as input (Ciss), output (Coss) and reverse transfer
(Crss) capacitances on data sheets. The relationships be-
tween the inter–terminal capacitances and those given on
data sheets are shown below. The Ciss can be specified in
two ways:
1. Drain shorted to source and positive voltage at the gate.
2. Positive voltage of the drain in respect to source and zero
volts at the gate.
In the latter case, the numbers are lower. However, neither
method represents the actual operating conditions in RF ap-
plications.
=8)*
'@
=0;
8;
:'
:@
)@@ / :' :@
@@ / :' '@
=@@ / :'
DRAIN CHARACTERISTICS
One critical figure of merit for a FET is its static resistance
in the full–on condition. This on–resistance, RDS(on), occurs
in the linear region of the output characteristic and is speci-
fied at a specific gate–source voltage and drain current. The
drain–source voltage under these conditions is termed
VDS(on). For MOSFETs, VDS(on) has a positive temperature
coefficient at high temperatures because it contributes to the
power dissipation within the device.
BVDSS values for this device are higher than normally re-
quired for typical applications. Measurement of BVDSS is not
recommended and may result in possible damage to the de-
vice.
GATE CHARACTERISTICS
The gate of the RF MOSFET is a polysilicon material, and
is electrically isolated from the source by a layer of oxide.
The DC input resistance is very high – on the order of 109 Ω
— resulting in a leakage current of a few nanoamperes.
Gate control is achieved by applying a positive voltage to
the gate greater than the gate–to–source threshold voltage,
VGS(th).
Gate Voltage Rating — Never exceed the gate voltage
rating. Exceeding the rated VGS can result in permanent
damage to the oxide layer in the gate region.
Gate Termination — The gates of these devices are es-
sentially capacitors. Circuits that leave the gate open–cir-
cuited or floating should be avoided. These conditions can
result in turn–on of the devices due to voltage build–up on
the input capacitor due to leakage currents or pickup.
Gate Protection — These devices do not have an internal
monolithic zener diode from gate–to–source. If gate protec-
tion is required, an external zener diode is recommended.
Using a resistor to keep the gate–to–source impedance low
also helps dampen transients and serves another important
function. Voltage transients on the drain can be coupled to
the gate through the parasitic gate–drain capacitance. If the
gate–to–source impedance and the rate of voltage change
on the drain are both high, then the signal coupled to the gate
may be large enough to exceed the gate–threshold voltage
and turn the device on.
DC BIAS
Since this device is an enhancement mode FET, drain cur-
rent flows only when the gate is at a higher potential than the
source. RF power FETs operate optimally with a quiescent
drain current (IDQ), whose value is application dependent.
This device was characterized at IDQ = 150 mA, which is the
suggested value of bias current for typical applications. For
special applications such as linear amplification, IDQ may
have to be selected to optimize the critical parameters.
The gate is a dc open circuit and draws no current. There-
fore, the gate bias circuit may generally be just a simple re-
sistive divider network. Some special applications may
require a more elaborate bias system.
GAIN CONTROL
Power output of this device may be controlled to some de-
gree with a low power dc control signal applied to the gate,
thus facilitating applications such as manual gain control,
ALC/AGC and modulation systems. This characteristic is
very dependent on frequency and load line.
MRF1517T1
12
MOTOROLA RF DEVICE DATA
MOUNTING
The specified maximum thermal resistance of 2°C/W as-
sumes a majority of the 0.065″ x 0.180″ source contact on
the back side of the package is in good contact with an ap-
propriate heat sink. As with all RF power devices, the goal of
the thermal design should be to minimize the temperature at
the back side of the package. Refer to Motorola Application
Note AN4005/D, “Thermal Management and Mounting Meth-
od for the PLD–1.5 RF Power Surface Mount Package,” and
Engineering Bulletin EB209/D, “Mounting Method for RF
Power Leadless Surface Mount Transistor” for additional in-
formation.
AMPLIFIER DESIGN
Impedance matching networks similar to those used with
bipolar transistors are suitable for this device. For examples
see Motorola Application Note AN721, “Impedance Matching
Networks Applied to RF Power Transistors.” Large–signal
impedances are provided, and will yield a good first pass
approximation.
Since RF power MOSFETs are triode devices, they are not
unilateral. This coupled with the very high gain of this device
yields a device capable of self oscillation. Stability may be
achieved by techniques such as drain loading, input shunt
resistive loading, or output to input feedback. The RF test fix-
ture implements a parallel resistor and capacitor in series
with the gate, and has a load line selected for a higher effi-
ciency, lower gain, and more stable operating region.
Two–port stability analysis with this device’s
S–parameters provides a useful tool for selection of loading
or feedback circuitry to assure stable operation. See
Motorola Application Note AN215A, “RF Small–Signal
Design Using Two–Port Parameters” for a discussion of two
port network theory and stability.
13
MRF1517T1MOTOROLA RF DEVICE DATA
NOTES
MRF1517T1
14
MOTOROLA RF DEVICE DATA
NOTES
15
MRF1517T1MOTOROLA RF DEVICE DATA
NOTES
MRF1517T1
16
MOTOROLA RF DEVICE DATA
PACKAGE DIMENSIONS
CASE 466–02
ISSUE B
"A
+ ," $ "$ " $
2+, +
+ ,"A -
+ " ""B$- $!$" " !
$ C+
_
DIM MIN MAX MIN MAX
MILLIMETERSINCHES
A+ + + +
B+ + + +
C+ + + +
D+ + + +
E+ + + +
F+ + + +
G+ + + +
H+ + + +
K+ + + +
L+ + + +
N+ + + +
P+ + + +
Q+ + + +
R+ + + +
S+ + + +
U+ + + +
ZONE V + + + +
ZONE W + + + +
ZONE X + + + +
2" A
+ $
+ $"
+ "
+ "
2
34
1
AF
R
L
NK
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B
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P
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RESIN BLEED/FLASH ALLOWABLE
J+ + + +
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mm
inches
+
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+
SOLDER FOOTPRINT
Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and
specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters which may be provided in Motorola
data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals”
must be validated for each customer application by customer’s technical experts. Motorola does not convey any license under its patent rights nor the rights of
others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other
applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury
or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola
and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees
arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that
Motorola was negligent regarding the design or manufacture of the part. Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer.
MOTOROLA and the logo are registered in the US Patent & Trademark Office. All other product or service names are the property of their respective owners.
E Motorola, Inc. 2002.
How to reach us:
USA/EUROPE/Locations Not Listed: Motorola Literature Distribution; P.O. Box 5405, Denver, Colorado 80217. 1–303–675–2140 or 1–800–441–2447
JAPAN: Motorola Japan Ltd.; SPS, Technical Information Center, 3–20–1, Minami–Azabu. Minato–ku, Tokyo 106–8573 Japan. 81–3–3440–3569
ASIA/PACIFIC: Motorola Semiconductors H.K. Ltd.; Silicon Harbour Centre, 2 Dai King Street, Tai Po Industrial Estate, Tai Po, N.T., Hong Kong. 852–26668334
Technical Information Center: 1–800–521–6274
HOME PAGE: http://www.motorola.com/semiconductors/
MRF1517/D
◊
