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Product Description
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
InP HBT
LDMOS
RF MEMS
CXE-1089Z
50MHz to 1200MHz 75Ω pHEMT MMIC LNA
RFMD’s CXE-1089Z is a high performance 75Ω pHEMT MMIC low-noise
amplifier utilizing a Darlington configuration with active bias. The active
bias network provides stable current over temperature and process
threshold voltage variations. The CXE-1089Z amplifier operates linearly
from +3.3VDC, +4.75VDC, or +5VDC power supplies.
Gain and Return Loss versus Frequency,
T=25°C
5.0
6.0
7.0
8.0
9.0
10.0
11.0
12.0
13.0
14.0
15.0
0.0 200.0 400.0 600.0 800.0 1000.0 1200.0
Frequency (MHz)
Gain (dB)
-35
-32
-29
-26
-23
-20
-17
-14
-11
-8
-5
Return Loss (dB)
S11
S21
S22
Flat Gain: 13dB+/-0.4dB,
50MHz to 1000MHz
Excellent Return Loss:
>15.5dB
Low Distortion: CTB=-82dBc,
CSO=-66dBc
Operates from Single, Fixed
+3.3VDC, +4.75VDC, or
+5VDC Supply
On-Chip Active Bias Network
Applications
CATV Set Top Box / Tuners
CATV Drop Amplifiers
Optical Rx/Tx
FTTH Video Solutions
DS100917
Package: SOT-89
CXE-1089Z
50MHz to
1200MHz
75Ω pHEMT
MMIC LNA
Parameter Specification Unit Condition
Min. Typ. Max.
Small Signal Gain 13.0 dB 500MHz
Gain Flatness +/-0.4 dB 50MHz to 1000MHz
Output Power at 1dB Compression 18.5 dBm 500MHz
Output Third Order Intercept Point 38.5 dBm 500MHz
CSO -66.0 dBc 55.25MHz to 745.25MHz, 110Ch, Flat Tilt,
15dBmV Input
CTB -82.0 dBc 55.25MHz to 745.25MHz, 110Ch, Flat Tilt,
15dBmV Input
XMOD -78.0 dBc 55.25MHz to 745.25MHz, 110Ch, Flat Tilt,
15dBmV Input
Input Return Loss, Worst Case 16.5 dB 50MHz to 1000MHz
Output Return Loss, Worst Case 15.5 dB 50MHz to 1000MHz
Noise Figure 3.0 dB 500MHz
Device Operating Voltage 5.00 5.25 V
Device Operating Current 110.0 mA Quiescent
Thermal Resistance 57.5 °C/W Junction-to-case
Test Conditions: VD=5V, ID=110mA Typ, OIP3 Tone Spacing=1MHz, POUT per tone=8dBm, TL=25°C, ZS=ZL=75Ω, Tested with App Circuit
2 of 12 DS100917
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
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CXE-1089Z
Parameter Specification Unit Condition
Min. Typ. Max.
Small Signal Gain 12.9 dB 500MHz
Gain Flatness +/-0.4 dB 50MHz to 1000MHz
Output Power at 1dB Compression 17.2 dBm 500MHz
Output Third Order Intercept Point 37.8 dBm 500MHz
CSO -61 dBc 55.25MHz to 547.25MHz, 79Ch, NTSC, Flat Tilt,
+15.5dBmV Input
CTB -79 dBc 55.25MHz to 547.25MHz, 79Ch, NTSC, Flat Tilt,
+15.5dBmV Input
Input Return Loss, Worst Case 16.4 dB 50MHz to 1000MHz, -40°C to +85°C
Output Return Loss, Worst Case 17.5 dB 50MHz to 1000MHz, -40°C to +85°C
Noise Figure 2.9 dB 500MHz
Device Operating Voltage 4.75 4.9 VDC
Device Operating Current 106 mA Quiescent
Test Conditions: VD=+4.75VDC, ID=106mA, Typ. OIP3 Tone Spacing=1MHz, POUT per tone=+8dBm
T=+25°C, ZS=ZI=75, Tested with +5VDC Applications Circuit
Parameter Specification Unit Condition
Min. Typ. Max.
Small Signal Gain 12.7 dB 500MHz
Gain Flatness +/-0.4 dB 50MHz to 1000MHz
Output Power at 1dB Compression 14.2 dBm 500MHz
Output Third Order Intercept Point 35.4 dBm 500MHz
CSO -56 dBc 55.25MHz to 547.25MHz, 79Ch, NTSC, Flat Tilt,
+15.5dBmV Input
CTB -78 dBc 55.25MHz to 547.25MHz, 79Ch, NTSC, Flat Tilt,
+15.5dBmV Input
Input Return Loss, Worst Case 16.4 dB 50MHz to 1000MHz, -40°C to +85°C
Output Return Loss, Worst Case 17.5 dB 50MHz to 1000MHz, -40°C to +85°C
Noise Figure 2.8 dB 500MHz
Device Operating Voltage 3.3 3.5 VDC
Device Operating Current 75 mA Quiescent
Test Conditions: VD=+3.3VDC, ID=75mA, Typ. OIP3 Tone Spacing=1MHz, POUT per tone=+8dBm
T=+25°C, ZS=ZI=75, Tested with +5VDC Applications Circuit
Absolute Maximum Ratings
Parameter Rating Unit
Device Current (ID) 125 mA
Device Voltage (VD)5.5V
Power Dissipation 690 mW
RF Input Power* (See Note) 23 dBm
Junction Temperature (TJ)+150°C
Operating Temperature Range (TL) -40 to +85 °C
Storage Temperature Range -65 to +150 °C
ESD Rating - Human Body Model
(HBM) Class 1A
Moisture Sensitivity Level MSL 2
*Note: Load condition, 10:1 VSWR
Operation of this device beyond any one of these limits may cause permanent dam-
age. For reliable continuous operation, the device voltage and current must not
exceed the maximum operating values specified in the table on page one.
Bias conditions should also satisfy the following expression:
IDVD<(T
J-TL)/RTH, j-l
TL=TLEAD
Caution! ESD sensitive device.
Exceeding any one or a combination of the Absolute Maximum Rating conditions may
cause permanent damage to the device. Extended application of Absolute Maximum
Rating conditions to the device may reduce device reliability. Specified typical perfor-
mance or functional operation of the device under Absolute Maximum Rating condi-
tions is not implied.
RoHS status based on EUDirective2002/95/EC (at time of this document revision).
The information in this publication is believed to be accurate and reliable. However, no
responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any
infringement of patents, or other rights of third parties, resulting from its use. No
license is granted by implication or otherwise under any patent or patent rights of
RFMD. RFMD reserves the right to change component circuitry, recommended appli-
cation circuitry and specifications at any time without prior notice.
3 of 12DS100917
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
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CXE-1089Z
Frequency (MHz)
Parameters Units 50 250 550 750 850 1050
Small Signal Gain dB 13.5 13.2 13.1 13.0 12.8 12.8
Output Power at 1dB Compression dBm 16.6 17.2 18.6 18.9 19.1 19.5
Output Third Order Intercept Point dBm 37.5 38.5 38.5 37.5 37.5 37.5
Output Second Order Intercept Point dBm 63.5 64.5 62.5 60.5 55.5 54.5
Input Return Loss dB -17.5 -27.5 -33.5 -38.5 -34.5 -25.5
Reverse Isolation dB -17.5 -17.5 -17.5 -17.5 -17.5 -17.5
Output Return Loss dB -17.5 -16.5 -16.5 -16.5 -15.5 -15.5
Noise Figure dB 3.5 2.5 2.5 2.5 2.5 2.5
Test Conditions: VD=5V ID=110mA Typ. OIP3, OIP2 Tone Spacing=1MHz, POUT per tone=8dBm
TL=25°C ZS=ZL=75Ω Tested with App Circuit
Current versus Voltage (RBIAS=Open)
0.0
20.0
40.0
60.0
80.0
100.0
120.0
140.0
0.0 1.0 2.0 3.0 4.0 5.0 6.0
Device Voltage (V)
Device Current (mA)
-40°C
+25°C
+85°C
4 of 12 DS100917
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
CXE-1089Z
Application Circuit Performance (VD=5V, ID=110mA, RBIAS=open)
S21 versus Frequency
8.0
10.0
12.0
14.0
16.0
18.0
0.0 0.5 1.0 1.5 2.0 2. 5 3.0
Frequency (GHz)
S21 (dB)
-40°C
25°C
85°C
S11 versus Frequency
-30.0
-25.0
-20.0
-15.0
-10.0
-5.0
0.0
0.0 0.5 1.0 1.5 2.0 2.5 3.0
Frequency (GHz)
S11 (dB)
-40°C
25°C
85°C
S22 versus Frequency
-30.0
-25.0
-20.0
-15.0
-10.0
-5.0
0.0
0.0 0.5 1.0 1.5 2.0 2.5 3.0
Frequency (GHz)
S22 (dB)
-40°C
25°C
85°C
S12 versus Frequency
-30.0
-25.0
-20.0
-15.0
-10.0
-5.0
0.0
0.0 0.5 1.0 1.5 2.0 2.5 3.0
Frequency (GHz)
S12 (dB)
-40°C
25°C
85°C
5 of 12DS100917
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
CXE-1089Z
Application Circuit Performance (VD=5V, ID=110mA, RBIAS=open)
OIP3 (8dBm/tone, 1MHz spacing)
34.0
36.0
38.0
40.0
42.0
44.0
0.0 0.2 0. 4 0.6 0.8 1.0 1.2
Frequency (GHz)
OIP3 (dBm)
-40°C
25°C
85°C
P1dB versus Frequency
12.0
14.0
16.0
18.0
20.0
22.0
0.0 0.2 0.4 0.6 0.8 1.0 1.2
Frequency (GHz)
P1dB (dBm)
-40°C
25°C
85°C
NF versus Frequency
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
0.0 0.2 0. 4 0.6 0.8 1.0 1.2
Frequency (GHz)
NF (dB)
-40°C
25°C
85°C
OIP2 (8dBm/tone, 1MHz spacing)
30.0
35.0
40.0
45.0
50.0
55.0
60.0
65.0
70.0
75.0
80.0
0.0 0. 2 0. 4 0.6 0.8 1. 0 1.2
Frequency (GHz)
OIP2 (dBm)
-40°C
25°C
85°C
6 of 12 DS100917
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
CXE-1089Z
Composite Performance - Application Circuit: (VD=5V, ID=110mA, 110Ch. Flat Tilt, RBIAS=Open)
50
55
60
65
70
75
80
85
90
95
100
0 100 200 300 400 500 600 700 800
-CSO
(dBc)
Frequency (MHz)
-CSO, +15dBmV Input, 110 Ch
-40
°
C
+25
°
C
+85
°
C
50
55
60
65
70
75
80
85
90
95
100
0 100 200 300 400 500 600 700 800
+CSO
(dBc)
Frequency (MHz)
+CSO, +15dBmV Input, 110 Ch
-40
°
C
+25°C
+85
°
C
50
55
60
65
70
75
80
85
90
95
100
0 100 200 300 400 500 600 700 800
XMOD
(dBc)
Frequency (MHz)
XMOD , +15dBmV Input, 110 Ch
-40
°
C
+25°C
+85
°
C
50
55
60
65
70
75
80
85
90
95
100
0 100 200 300 400 500 600 700 800
CTB
(dBc)
Frequency (MHz)
CTB , +15dBmV Input, 110 Ch
-40
°
C
+2
5
°
C
+8
5
°
C
7 of 12DS100917
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
CXE-1089Z
Application Circuit Performance versus Device Current (varying RBIAS) VD=5.0V, T=+25°C
S11 versus Frequency
-30.0
-25.0
-20.0
-15.0
-10.0
-5.0
0.0
0.0 0.5 1.0 1.5 2.0 2.5 3.0
Frequency (GHz)
S11 (dB)
80mA
90mA
100mA
S21 versus Frequency
8.0
9.0
10.0
11.0
12.0
13.0
14.0
15.0
16.0
17.0
18.0
0.0 0.5 1. 0 1. 5 2.0 2.5 3.0
Frequency (GHz)
S21 (dB)
80mA
90mA
100mA
S12 versus Frequency
-30.0
-25.0
-20.0
-15.0
-10.0
-5.0
0.0
0.0 0.5 1.0 1.5 2.0 2.5 3.0
Frequency (GHz)
S12 (dB)
80mA
90mA
100mA
S22 versus Frequency
-30.0
-25.0
-20.0
-15.0
-10.0
-5.0
0.0
0.0 0.5 1.0 1.5 2.0 2.5 3.0
Frequency (GHz)
S22 (dB)
80mA
90mA
100mA
8 of 12 DS100917
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
CXE-1089Z
Application Circuit Performance versus Device Current (RBIAS) VD=5.0V, T=+25°C
OIP3 versus Frequency (8dBm/tone, 1MHz spacing)
25.0
27.0
29.0
31.0
33.0
35.0
37.0
39.0
41.0
43.0
45.0
0.0 0.2 0.4 0.6 0.8 1.0 1.2
Frequency (GHz)
OIP3 (dBm)
80mA
90mA
100mA
OIP2 versus Frequency (8dBm/tone, 1MHz spacing)
35.0
40.0
45.0
50.0
55.0
60.0
65.0
70.0
75.0
0.0 0.2 0.4 0.6 0.8 1.0 1.2
Frequency (GHz)
OIP2 (dBm)
80mA
90mA
100mA
NF versus Frequency
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
0.0 0.2 0. 4 0.6 0.8 1.0 1.2
Frequency (GHz)
NF (dB)
80mA
90mA
100mA
P1dB versus Frequency
13.0
14.0
15.0
16.0
17.0
18.0
19.0
20.0
21.0
22.0
23.0
0.0 0.2 0.4 0.6 0.8 1.0 1.2
Frequency (GHz)
P1dB (dBm)
80mA
90mA
100mA
9 of 12DS100917
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
CXE-1089Z
Application Circuit Performance versus Device Current (RBIAS) VD=5.0V, T=+25°C
50
55
60
65
70
75
80
85
90
95
100
0 100 200 300 400 500 600 700 800
XMOD
(dBc)
Frequency (MHz)
XMOD , +15dBmV Input, 110 Ch
80mA
90mA
100mA
50
55
60
65
70
75
80
85
90
95
100
0 100 200 300 400 500 600 700 800
CTB
(dBc)
Frequency (MHz)
CTB , +15dBmV Input, 110 Ch
80mA
90mA
100mA
50
55
60
65
70
75
80
85
90
95
100
0 100 200 300 400 500 600 700 800
-CSO
(dBc)
Frequency (MHz)
-CSO, +15dBmV Input, 110 Ch
80mA
90mA
100mA
50
55
60
65
70
75
80
85
90
95
100
0 100 200 300 400 500 600 700 800
+CSO
(dBc)
Frequency (MHz)
+CSO, +15dBmV Input, 110 Ch
80mA
90mA
100mA
10 of 12 DS100917
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support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
CXE-1089Z
Application Schematic
Application Circuit Element Values
Evaluation Board Layout and Bill of Materials
Mounting Instructions
1. Solder the copper pad on the backside of the device package to the ground plane.
2. Use a large ground pad area with many plated through-holes as shown.
3. We recommend 1 or 2 ounce copper. Measurements for this data sheet were made on a 31mil thick GTEK board with 1
ounce copper on both sides.
Reference Designator Frequency (MHz) 50 to 1200
F-connectors
C1, C3, C4 1000pF 0603 size
C2 100pF 0603 size
L1 1.2uH 1008LS size
*RBIAS See table below
*Optional shunt resistor can be used to lower device current.
Performance degradation may occur.
RBIAS Device Current (VD=5.0V)
1.3kΩ80mA
2.4kΩ90mA
4.7kΩ100 mA
open 110mA
V+
C2C1
L1
CXE-1089Z
C3
RF IN
*RBIAS C4 RF OUT
J2J1
HDR1 HDR2
U1
11 of 12DS100917
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CXE-1089Z
Package Marking
Alternate marking “CXE1089Z” on line one with Trace Code on line two.
Recommended Land Pattern Drawings
Dimensions shown in inches [mm]
Package Drawing
Dimensions in inches (millimeters)
Refer to drawing posted at www.rfmd.com for tolerances.
Pin Function Description
1RFIN
RF input pin. This pin requires the use of an external DC blocking capacitor chosen for the frequency of operation.
2, 4 GND Connection to ground. Use via holes as close as possible to the ground leads to minimize inductance.
3RFOUT/BIAS
RF output and bias pin. DC voltage is present on this pin, therefore a DC blocking capacitor is necessary for proper oper-
ation.
C
X1
Z
4
12 of 12 DS100917
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CXE-1089Z
Ordering Information
Part Number Description Reel Size Devices/Reel
CXE-1089ZSB 5pcs Sample Bag N/A N/A
CXE-1089ZSQ 25pcs Sample Bag N/A N/A
CXE-1089ZSR 50MHz to 1200MHz 75Ω pHEMT MMIC LNA 7” 100pcs
CXE-1089Z 50MHz to 1200MHz 75Ω pHEMT MMIC LNA 7” 1000pcs
CXE1089PCK-EVB1 75 Evaluation Board & 5 Loose Pieces N/A N/A
