CLX27 HiRel X-Band GaAs Power-MESFET * HiRel Discrete and Microwave Semiconductor * For professional power amplifiers * For frequencies from 500 MHz to 15 GHz * Hermetically sealed microwave power package * * Low thermal resistance for high voltage application Power added efficiency > 55 % * Space Qualification Expected 1998 ESA/SCC Detail Spec. No.: 5614/007, Type Variant No.s 04 to 06 ESD: Electrostatic discharge sensitive device, observe handling precautions! Type CLX27-00 (ql) Marking - Ordering Code see below Pin Configuration 1 2 3 G S D Package MWP-25 CLX27-05 (ql) CLX27-10 (ql) CLX27-nn: specifies output power level (see electrical characteristics) (ql) Quality Level: P: Professional Quality, Ordering Code: Q62702L119 H: High Rel Quality, Ordering Code: on request S: Space Quality, Ordering Code: on request ES: ESA Space Quality, Ordering Code: Q62702L118 (see order instructions for ordering example) Semiconductor Group 1 of 9 Draft D, September 99 CLX27 Maximum Ratings Parameter Symbol Values Unit Drain-source voltage VDS 11 V Drain-gate voltage VDG 13 V Gate-source voltage VGS -6 V Drain current ID 420 mA Gate forward current IG 5 mA Compression Level 1) Operation Range 1 PC 1.5 at VDS 8 V dB 2.5 at VDS 7 V 3.5 at VDS 6 V Compression Level 2) Operation Range 2 PC 3.5 at VDS 6 V dB Compression Level 3) Operation Range 3 PC tbd. dB Junction temperature TJ 175 C Storage temperature range Tstg - 65...+ 175 C Ptot 3.38 W Tsol 230 C Rth JS 40 K/W Total power dissipation Soldering temperature 4) 5) Thermal Resistance Junction-soldering point Notes.: 1) Operation Range 1: 80 mA ID 160 mA 2) Operation Range 2: ID > 160 mA 3) Operation Range 3: ID < 80 mA 4) At TS = + 40 C. For TS > + 40 C derating is required. 5) During 15 sec. maximum. The same terminal shall not be resoldered until 3 minutes have elapsed. Semiconductor Group 2 of 9 Draft D, September 99 CLX27 Electrical Characteristics (at TA=25C; unless otherwise specified) Parameter Symbol Values Unit min. typ. max. IDss 180 300 420 mA -VGth 1.2 2.2 3.2 V IDp3 - - 60 A -IGp3 - - 24 A IDp9.5 - - 600 A -IGp9.5 - - 240 A gm 130 160 - mS Rth JS - 35 - K/W DC Characteristics Drain-source saturation current VDS = 2 V, VGS = 0 V Gate threshold voltage VDS = 3 V, ID = 12 mA Drain current at pinch-off, low VDS VDS = 3 V, VGS = -3.5 V Gate current at pinch-off, low VDS VDS = 3 V, VGS = -3.5 V Drain current at pinch-off, high VDS VDS = 9.5 V, VGS = -3.5 V Gate current at pinch-off, high VDS VDS = 9.5 V, VGS = -3.5 V Transconductance VDS = 3 V, ID = 120 mA Thermal resistance Junction to soldering point VDS = 8 V, ID = 120 mA, Ts = +25C Semiconductor Group 3 of 9 Draft D, September 99 CLX27 Electrical Characteristics (continued) Parameter Symbol Values min. typ. Unit max. AC Characteristics Linear power gain 1) Glp dB VDS = 8 V, ID = 120 mA, f = 2.3 GHz, Pin = 0 dBm CLX27-00 17.5 18.5 - CLX27-05 18.0 19.0 - CLX27-10 18.0 19.0 - Power output at 1dB gain compr. 1) dBm P1dB VDS = 8 V, ID(RF off) = 120 mA, f = 2.3 GHz CLX27-00 - 26.5 - CLX27-05 - 27.3 - CLX27-10 - 27.8 - Output Power 1) Pout dBm VDS = 8 V, ID(RF off) = 120 mA, f = 2.3 GHz, Pin = 10.5 dBm CLX27-00 26.0 26.5 - CLX27-05 27.0 27.3 - CLX27-10 27.5 27.8 - Power added efficiency 1), 2) PAE % VDS = 8 V, ID(RF off) = 120 mA, f = 2.3 GHz, Pin = 10.5 dBm CLX27-00 45 50 - CLX27-05 48 53 - CLX27-10 50 55 - Notes.: 1) RF Power characteristics given for power matching conditions 2) Power added efficiency: PAE = (PRFout - PRFin) / PDC Semiconductor Group 4 of 9 Draft D, September 99 CLX27 Typical Common Source S-Parameters f [GHz] 0,5 0,6 0,7 0,8 0,9 1,0 1,1 1,2 1,3 1,4 1,5 1,6 1,7 1,8 1,9 2,0 2,1 2,2 2,3 2,4 2,5 2,6 2,7 2,8 2,9 3,0 3,1 3,2 3,3 3,4 3,5 4,0 4,5 5,0 5,5 6,0 6,5 7,0 7,5 8,0 8,5 9,0 9,5 10,0 10,5 11,0 11,5 12,0 12,5 13,0 13,5 14,0 14,5 15,0 15,5 16,0 16,5 17,0 17,5 18,0 |S11| [magn] 0,945 0,928 0,911 0,898 0,886 0,875 0,867 0,861 0,855 0,849 0,844 0,839 0,834 0,830 0,826 0,822 0,819 0,815 0,812 0,810 0,807 0,806 0,804 0,803 0,802 0,800 0,799 0,799 0,797 0,796 0,795 0,794 0,793 0,793 0,792 0,791 0,791 0,790 0,789 0,788 0,788 0,787 0,786 0,784 0,780 0,776 0,770 0,757 0,739 0,715 0,690 0,666 0,641 0,619 0,599 0,585 0,583 0,592 0,613 0,636 27.5 dBm) in ESA Space Quality Level Further Informations: See our WWW-Pages: - Discrete and RF-Semiconductors (Small Signal Semiconductors) www.infineon.de/semiconductor/products/35/35.htm - HiRel Discrete and Microwave Semiconductors www.infineon.de/semiconductor/products/35/353.htm Please contact also our marketing division : Address: Infineon Technologies AG AIM DS M 2 Sabine Stimmler P.O.Box 800949, D-81609 Munich Semiconductor Group 8 of 9 , Draft D, September 99 CLX27 MWP-25 Package Published by Infineon Technologies Semiconductors, High Frequency Products Marketing, P.O.Box 801709, D-81617 Munich. Infineon Reserved. Technologies AG 1998. All Rights As far as patents or other rights of third parties are concerned, liability is only assumed for components per se, not for applications, processes and circuits implemented within components or assemblies. 1 2 The information describes the type of component and shall not be considered as assured characteristics. Terms of delivery and rights to change design reserved. 3 For questions on technology, delivery and prices please contact the Offices of Semiconductor Group in Germany or the Infineon Technologies Companies and Representatives woldwide (see address list). Due to technical requirements components may contain dangerous substances. For information on the type in question please contact your nearest Infineon Technologies Office, Semiconductor Group. Infineon Technologies Semiconductors is a certified CECC and QS9000 manufacturer (this includes ISO 9000). Semiconductor Group 9 of 9 Draft D, September 99