CGH55015F2 / CGH55015P2 10 W, C-band, Unmatched, GaN HEMT Cree's CGH55015F2/CGH55015P2 is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH55015F2/ CGH55015P2 ideal for C-band pulsed or CW saturated amplifiers. The transistor is available in both screw-down, flange and solder-down, pill packages. Based on appropriate external match adjustment, the CGH55015F2/CGH55015P2 is suitable for applications up to 6 GHz. FEATURES Package Type : 440196 & 440166 PN: CGH5501 5P2 & CGH55 015F2 APPLICATIONS * 4.5 to 6.0 GHz Operation * 2-Way Private Radio * 12 dB Small Signal Gain at 5.65 GHz * Broadband Amplifiers * 13 W typical PSAT * Cellular Infrastructure * 60 % Efficiency at PSAT * Test Instrumentation * 28 V Operation * Class A, AB Amplifiers for Drivers and il 2012 Rev 3.1 - Apr Gain Blocks Subject to change without notice. www.cree.com/wireless 1 Absolute Maximum Ratings (not simultaneous) at 25C Case Temperature Parameter Symbol Rating Units Conditions Drain-Source Voltage VDSS 84 Volts 25C Gate-to-Source Voltage VGS -10, +2 Volts 25C Storage Temperature TSTG -65, +150 C Operating Junction Temperature TJ 225 C Maximum Forward Gate Current IGMAX 4.0 mA 25C Maximum Drain Current1 IDMAX 1.5 A 25C TS 245 C Soldering Temperature2 Screw Torque Thermal Resistance, Junction to Case3 Case Operating Temperature 3,4 60 in-oz RJC 8.0 C/W 85C TC -40, +150 C 30 seconds Note: 1 Current limit for long term, reliable operation. 2 Refer to the Application Note on soldering at www.cree.com/products/wireless_appnotes.asp 3 Measured for the CGH55015 at PDISS = 14W. 4 See also, the Power Dissipation De-rating Curve on Page 5. Electrical Characteristics (TC = 25C) Characteristics Symbol Min. Typ. Max. Units Conditions Gate Threshold Voltage VGS(th) -3.8 -3.0 -2.3 VDC VDS = 10 V, ID = 3.6 mA Gate Quiescent Voltage VGS(Q) - -2.7 - VDC VDS = 28 V, ID = 200 mA Saturated Drain Current IDS 2.9 3.5 - A VDS = 6.0 V, VGS = 2.0 V Drain-Source Breakdown Voltage VBR 120 - - VDC VGS = -8 V, ID = 3.6 mA DC Characteristics1 RF Characteristics2 (TC = 25C, F0 = 5.65 GHz unless otherwise noted) Small Signal Gain GSS 10 12 - dB VDD = 28 V, IDQ = 200 mA Power Output PSAT 10 12.5 - W VDD = 28 V, IDQ = 200 mA 50 60 - % VDD = 28 V, IDQ = 200 mA, POUT = 10 W 3 Drain Efficiency4 VSWR - - 10 : 1 Y No damage at all phase angles, VDD = 28 V, IDQ = 200 mA, POUT = 10 W CW Input Capacitance CGS - 4.5 - pF VDS = 28 V, Vgs = -8 V, f = 1 MHz Output Capacitance CDS - 1.3 - pF VDS = 28 V, Vgs = -8 V, f = 1 MHz Feedback Capacitance CGD - 0.2 - pF VDS = 28 V, Vgs = -8 V, f = 1 MHz Output Mismatch Stress Dynamic Characteristics Notes: 1 Measured on wafer prior to packaging. 2 Measured in CGH55015-TB. 3 PSAT is defined as IG = 0.36 mA. 4 Drain Efficiency = POUT / PDC Copyright (c) 2008-2012 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. 2 CGH55015F2_P2 Rev 3.1 Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/wireless Typical Performance Small Signal S-Parameters vs Frequency of CGH55015F2 and CGH55015P2 in the CGH55015-TB GainVand Input Loss Frequency = 28Retrun V, IDQ =vs200 mA of DD 2 13 1 12 0 11 -1 10 -2 9 -3 8 -4 7 -5 6 -6 5 S21 4 S11 (dB) S21 (dB) CGH55015F Vdd=28 V,Idq=115 mA 14 -7 S11 -8 3 -9 2 -10 1 -11 0 -12 5.2 5.3 5.4 5.5 5.6 5.7 5.8 5.9 6.0 6.1 Frequency (GHz) Drain Efficiency, Power and Gain vs Frequency of the CGH55015F2 and CGH55015P2 in the CGH55015-TB CGH55015 - GaN HEMT C-Band Performance VDD = 28 V, and IDQGain = 200 mA Drain Efficiency, Power, vs Frequency Drain Efficiency (%), Psat (dBm), Gain (dB) 70 60 50 40 30 Gain (dB) Psat (dBm) 20 Drain Efficiency (%) 10 0 5.3 5.4 5.5 5.6 5.7 5.8 5.9 6 Frequency (GHz) Copyright (c) 2008-2012 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. 3 CGH55015F2_P2 Rev 3.1 Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/wireless Typical Performance K Factor MAG (dB) Simulated Maximum Available Gain and K Factor of the CGH55015F2/CGH55015P2 VDD = 28 V, IDQ = 200 mA Typical Noise Performance Noise Resistance (Ohms) Minimum Noise Figure (dB) Simulated Minimum Noise Figure and Noise Resistance vs Frequency of the CGH55015F2/CGH55015P2 VDD = 28 V, IDQ = 200 mA Electrostatic Discharge (ESD) Classifications Parameter Symbol Class Test Methodology Human Body Model HBM 1A > 250 V JEDEC JESD22 A114-D Charge Device Model CDM 1 < 200 V JEDEC JESD22 C101-C Copyright (c) 2008-2012 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. 4 CGH55015F2_P2 Rev 3.1 Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/wireless Source and Load Impedances D Z Source Z Load G S Frequency (MHz) Z Source Z Load 5500 8.7 - j30.2 21.6 - j4.7 5650 10.2 - j26.9 24.2 - j5.5 5800 12.3 - j24.3 26.5 - j7.5 Note 1. VDD = 28V, IDQ = 200 mA in the 440166 package. Note 2. Impedances are extracted from the CGH55015-TB demonstration amplifier and are not source and load pull data derived from the transistor. CGH55015F2 and CGH55015P2 Power Dissipation De-rating Curve CGH40010F CW Power Dissipation De-rating Curve 16 14 Power Dissipation (W) 12 10 8 Note 1 6 4 2 0 0 25 50 75 100 125 150 175 200 225 250 Maximum Case Temperature (C) Note 1. Area exceeds Maximum Case Operating Temperature (See Page 2). Copyright (c) 2008-2012 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. 5 CGH55015F2_P2 Rev 3.1 Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/wireless CGH55015-TB Demonstration Amplifier Circuit Bill of Materials Designator Description Qty C1 CAP, 1.2pF, +/-0.1 pF, 0603, ATC 600S 1 C2 CAP, 0.3pF, +/-0.05 pF, 0402, ATC 600L 1 CAP, 0.5pF,+/-0.05pF, 0603, ATC 600S 1 C4,C11 C9 CAP, 18pF, +/-5%, 0603, ATC 600S 2 C5,C12 CAP, 39pF +/-5%, 0603, ATC 600S 2 C6,C13 CAP, CER, 180pF, 50V, +/-5%, C0G, 0603 2 C7,C14 CAP, CER, 0.1UF, 50V, +/-10%, X7R, 0805 2 CAP, 10UF, 16V, SMT, TANTALUM 1 C15 CAP, 1.0UF 10%, 100V, 1210, X7R 1 C16 CAP, 33UF, 100V, ELECT, FK, SMD 1 RES, 1/16W, 0603, 1%, 562 OHMS 1 C8 R1 R2 RES, 1/16W, 0603, 1%, 22 OHMS 1 J1 HEADER RT> PLZ .1 CEN LK 5 POS 1 CONN, SMA, FLANGE 2 - PCB, RO4350B, Er = 3.48, h = 20 mil 1 - CGH55015 1 J3,J4 CGH55015-TB Demonstration Amplifier Circuit Copyright (c) 2008-2012 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. 6 CGH55015F2_P2 Rev 3.1 Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/wireless CGH55015-TB Demonstration Amplifier Circuit Schematic CGH55015-TB Demonstration Amplifier Circuit Outline Copyright (c) 2008-2012 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. 7 CGH55015F2_P2 Rev 3.1 Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/wireless Typical Package S-Parameters for CGH55015F2 / CGH55015P2 (Small Signal, VDS = 28 V, IDQ = 200 mA, angle in degrees) Frequency Mag S11 Ang S11 Mag S21 Ang S21 Mag S12 Ang S12 Mag S22 Ang S22 500 MHz 0.911 -130.86 18.44 105.32 0.022 19.38 0.302 -113.00 600 MHz 0.906 -139.86 15.82 99.40 0.023 14.28 0.299 -120.56 700 MHz 0.902 -146.89 13.81 94.44 0.023 10.15 0.298 -126.20 800 MHz 0.900 -152.58 12.23 90.14 0.023 6.68 0.299 -130.51 900 MHz 0.898 -157.33 10.97 86.29 0.023 3.69 0.302 -133.91 1.0 GHz 0.897 -161.38 9.93 82.79 0.023 1.03 0.305 -136.65 1.1 GHz 0.896 -164.92 9.06 79.53 0.023 -1.36 0.309 -138.93 1.2 GHz 0.895 -168.07 8.33 76.47 0.023 -3.55 0.314 -140.86 1.3 GHz 0.895 -170.92 7.71 73.56 0.023 -5.58 0.320 -142.55 1.4 GHz 0.895 -173.52 7.17 70.77 0.023 -7.47 0.326 -144.06 1.5 GHz 0.894 -175.93 6.70 68.08 0.023 -9.25 0.332 -145.44 1.6 GHz 0.894 -178.19 6.29 65.47 0.023 -10.93 0.338 -146.73 1.7 GHz 0.894 179.68 5.92 62.93 0.023 -12.52 0.345 -147.96 1.8 GHz 0.894 177.66 5.60 60.44 0.023 -14.04 0.351 -149.13 1.9 GHz 0.894 175.72 5.31 58.01 0.022 -15.49 0.358 -150.28 2.0 GHz 0.894 173.85 5.04 55.62 0.022 -16.88 0.365 -151.42 2.1 GHz 0.895 172.04 4.80 53.26 0.022 -18.21 0.372 -152.54 2.2 GHz 0.895 170.28 4.59 50.93 0.022 -19.48 0.379 -153.66 2.3 GHz 0.895 168.57 4.39 48.64 0.022 -20.69 0.386 -154.78 2.4 GHz 0.895 166.88 4.21 46.37 0.021 -21.85 0.393 -155.92 2.5 GHz 0.895 165.22 4.04 44.11 0.021 -22.96 0.400 -157.06 2.6 GHz 0.895 163.58 3.88 41.88 0.021 -24.02 0.407 -158.21 2.7 GHz 0.895 161.97 3.74 39.67 0.021 -25.02 0.413 -159.37 2.8 GHz 0.896 160.36 3.61 37.47 0.020 -25.97 0.420 -160.55 2.9 GHz 0.896 158.76 3.49 35.28 0.020 -26.87 0.426 -161.75 3.0 GHz 0.896 157.17 3.37 33.11 0.020 -27.72 0.433 -162.96 3.2 GHz 0.896 153.99 3.17 28.79 0.019 -29.24 0.445 -165.43 3.4 GHz 0.896 150.81 2.99 24.49 0.019 -30.53 0.456 -167.97 3.6 GHz 0.897 147.59 2.83 20.21 0.018 -31.57 0.467 -170.58 3.8 GHz 0.897 144.34 2.69 15.94 0.018 -32.35 0.477 -173.26 4.0 GHz 0.897 141.03 2.56 11.67 0.017 -32.86 0.487 -176.01 4.2 GHz 0.897 137.66 2.45 7.39 0.017 -33.08 0.496 -178.84 4.4 GHz 0.897 134.20 2.35 3.09 0.017 -33.02 0.504 178.25 4.6 GHz 0.897 130.65 2.26 -1.24 0.016 -32.67 0.511 175.25 4.8 GHz 0.897 127.01 2.18 -5.61 0.016 -32.06 0.517 172.16 5.0 GHz 0.896 123.25 2.11 -10.03 0.016 -31.23 0.523 168.97 5.2 GHz 0.896 119.37 2.04 -14.50 0.016 -30.22 0.528 165.68 5.4 GHz 0.896 115.36 1.98 -19.04 0.016 -29.11 0.532 162.26 5.6 GHz 0.896 111.21 1.92 -23.65 0.016 -27.99 0.536 158.72 5.8 GHz 0.895 106.92 1.87 -28.34 0.017 -26.98 0.539 155.04 6.0 GHz 0.895 102.47 1.83 -33.12 0.017 -26.15 0.541 151.21 Download this s-parameter file in ".s2p" format at http://www.cree.com/products/wireless_s-parameters.asp Copyright (c) 2008-2012 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. 8 CGH55015F2_P2 Rev 3.1 Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/wireless Product Dimensions CGH55015F2 (Package Type -- 440166) Product Dimensions CGH55015P2 (Package Type -- 440196) Copyright (c) 2008-2012 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. 9 CGH55015F2_P2 Rev 3.1 Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/wireless Disclaimer Specifications are subject to change without notice. Cree, Inc. believes the information contained within this data sheet to be accurate and reliable. However, no responsibility is assumed by Cree for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Cree. Cree makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose. "Typical" parameters are the average values expected by Cree in large quantities and are provided for information purposes only. These values can and do vary in different applications and actual performance can vary over time. All operating parameters should be validated by customer's technical experts for each application. Cree products are not designed, intended or authorized for use as components in applications intended for surgical implant into the body or to support or sustain life, in applications in which the failure of the Cree product could result in personal injury or death or in applications for planning, construction, maintenance or direct operation of a nuclear facility. For more information, please contact: Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 www.cree.com/wireless Sarah Miller Marketing & Export Cree, RF Components 1.919.407.5302 Ryan Baker Marketing Cree, Wireless Devices 1.919.287.7816 Tom Dekker Sales Director Cree, Wireless Devices 1.919.313.5639 Copyright (c) 2008-2012 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. 10 CGH55015F2_P2 Rev 3.1 Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/wireless