CGH55015P2 - Cree, Inc. - Datasheet.Live

Subject to change without notice.

www.cree.com/wireless

CGH55015F2 / CGH55015P2

10 W, C-band, Unmatched, GaN HEMT

Cree’s CGH55015F2/CGH55015P2 is a gallium nitride (GaN) high electron

mobility transistor (HEMT) designed specically for high efciency, high

gain and wide bandwidth capabilities, which makes the CGH55015F2/

CGH55015P2 ideal for C-band pulsed or CW saturated ampliers. The

transistor is available in both screw-down, ange and solder-down,

pill packages. Based on appropriate external match adjustment, the

CGH55015F2/CGH55015P2 is suitable for applications up to 6 GHz.

Package Type: 440196 & 440166

PN: CGH55015P2 & CGH55015F2

Rev 3.1 – April 2012

FEATURES

• 4.5 to 6.0 GHz Operation

• 12 dB Small Signal Gain at 5.65 GHz

• 13 W typical PSAT

• 60 % Efciency at PSAT

• 28 V Operation

APPLICATIONS

• 2-Way Private Radio

• Broadband Ampliers

• Cellular Infrastructure

• Test Instrumentation

• Class A, AB Ampliers for Drivers and

Gain Blocks

2CGH55015F2_P2 Rev 3.1

Cree, Inc.

4600 Silicon Drive

Durham, North Carolina, USA 27703

USA Tel: +1.919.313.5300

Fax: +1.919.869.2733

www.cree.com/wireless

the Cree logo are registered trademarks of Cree, Inc.

Absolute Maximum Ratings (not simultaneous) at 25˚C Case Temperature

Parameter Symbol Rating Units Conditions

Drain-Source Voltage VDSS 84 Volts 25˚C

Gate-to-Source Voltage VGS -10, +2 Volts 25˚C

Storage Temperature TSTG -65, +150 ˚C

Operating Junction Temperature TJ225 ˚C

Maximum Forward Gate Current IGMAX 4.0 mA 25˚C

Maximum Drain Current1IDMAX 1.5 A 25˚C

Soldering Temperature2TS245 ˚C

Screw Torque τ60 in-oz

Thermal Resistance, Junction to Case3RθJC 8.0 ˚C/W 85˚C

Case Operating Temperature3,4 TC-40, +150 ˚C 30 seconds

Note:

1 Current limit for long term, reliable operation.

2 Refer to the Application Note on soldering at www.cree.com/products/wireless_appnotes.asp

3 Measured for the CGH55015 at PDISS = 14W.

4 See also, the Power Dissipation De-rating Curve on Page 5.

Electrical Characteristics (TC = 25˚C)

Characteristics Symbol Min. Typ. Max. Units Conditions

DC Characteristics1

Gate Threshold Voltage VGS(th) -3.8 -3.0 -2.3 VDC VDS = 10 V, ID = 3.6 mA

Gate Quiescent Voltage VGS(Q) –-2.7 – VDC VDS = 28 V, ID = 200 mA

Saturated Drain Current IDS 2.9 3.5 –AVDS = 6.0 V, VGS = 2.0 V

Drain-Source Breakdown Voltage VBR 120 – – VDC VGS = -8 V, ID = 3.6 mA

RF Characteristics2 (TC = 25˚C, F0 = 5.65 GHz unless otherwise noted)

Small Signal Gain GSS 10 12 – dB VDD = 28 V, IDQ = 200 mA

Power Output3PSAT 10 12.5 –WVDD = 28 V, IDQ = 200 mA

Drain Efciency4η50 60 –%VDD = 28 V, IDQ = 200 mA, POUT = 10 W

Output Mismatch Stress VSWR – – 10 : 1 Y

No damage at all phase angles,

VDD = 28 V, IDQ = 200 mA,

POUT = 10 W CW

Dynamic Characteristics

Input Capacitance CGS –4.5 – pF VDS = 28 V, Vgs = -8 V, f = 1 MHz

Output Capacitance CDS –1.3 – pF VDS = 28 V, Vgs = -8 V, f = 1 MHz

Feedback Capacitance CGD –0.2 – pF VDS = 28 V, Vgs = -8 V, f = 1 MHz

Notes:

1 Measured on wafer prior to packaging.

2 Measured in CGH55015-TB.

3 PSAT is dened as IG = 0.36 mA.

4 Drain Efciency = POUT / PDC

3CGH55015F2_P2 Rev 3.1

Cree, Inc.

4600 Silicon Drive

Durham, North Carolina, USA 27703

USA Tel: +1.919.313.5300

Fax: +1.919.869.2733

www.cree.com/wireless

the Cree logo are registered trademarks of Cree, Inc.

-4

-3

-2

-1

S11 (dB)

S21 (dB)

Gain and Input Retrun Loss vs Frequency of

CGH55015F Vdd=28 V,Idq=115 mA

-12

-11

-10

-9

-8

-7

-6

-5

5.2 5.3 5.4 5.5 5.6 5.7 5.8 5.9 6.0 6.1

S11 (dB)

S21 (dB)

Frequency (GHz)

S21 S11

Typical Performance

Small Signal S-Parameters vs Frequency of

CGH55015F2 and CGH55015P2 in the CGH55015-TB

VDD = 28 V, IDQ = 200 mA

Drain Efciency, Power and Gain vs Frequency of the

CGH55015F2 and CGH55015P2 in the CGH55015-TB

VDD = 28 V, IDQ = 200 mA

Drain Efficiency (%), Psat (dBm), Gain (dB)

CGH55015 - GaN HEMT C-Band Performance

Drain Efficiency, Power, and Gain vs Frequency

5.3 5.4 5.5 5.6 5.7 5.8 5.9 6

Drain Efficiency (%), Psat (dBm), Gain (dB)

Frequency (GHz)

Gain (dB)

Psat (dBm)

Drain Efficiency (%)

4CGH55015F2_P2 Rev 3.1

Cree, Inc.

4600 Silicon Drive

Durham, North Carolina, USA 27703

USA Tel: +1.919.313.5300

Fax: +1.919.869.2733

www.cree.com/wireless

the Cree logo are registered trademarks of Cree, Inc.

Typical Performance

Simulated Maximum Available Gain and K Factor of the CGH55015F2/CGH55015P2

VDD = 28 V, IDQ = 200 mA

Typical Noise Performance

Simulated Minimum Noise Figure and Noise Resistance vs Frequency

of the CGH55015F2/CGH55015P2

VDD = 28 V, IDQ = 200 mA

Electrostatic Discharge (ESD) Classications

Parameter Symbol Class Test Methodology

Human Body Model HBM 1A > 250 V JEDEC JESD22 A114-D

Charge Device Model CDM 1 < 200 V JEDEC JESD22 C101-C

MAG (dB)

K Factor

Minimum Noise Figure (dB)

Noise Resistance (Ohms)

5CGH55015F2_P2 Rev 3.1

Cree, Inc.

4600 Silicon Drive

Durham, North Carolina, USA 27703

USA Tel: +1.919.313.5300

Fax: +1.919.869.2733

www.cree.com/wireless

the Cree logo are registered trademarks of Cree, Inc.

Source and Load Impedances

Frequency (MHz) Z Source Z Load

5500 8.7 – j30.2 21.6 – j4.7

5650 10.2 – j26.9 24.2 - j5.5

5800 12.3 – j24.3 26.5 - j7.5

Note 1. VDD = 28V, IDQ = 200 mA in the 440166 package.

Note 2. Impedances are extracted from the CGH55015-TB demonstration

amplier and are not source and load pull data derived from the transistor.

CGH55015F2 and CGH55015P2 Power Dissipation De-rating Curve

Note 1. Area exceeds Maximum Case Operating Temperature (See Page 2).

Z Source Z Load

Power Dissipation (W)

CGH40010F CW Power Dissipation De-rating Curve

0 25 50 75 100 125 150 175 200 225 250

Power Dissipation (W)

Maximum Case Temperature (°C)

Note 1

6CGH55015F2_P2 Rev 3.1

Cree, Inc.

4600 Silicon Drive

Durham, North Carolina, USA 27703

USA Tel: +1.919.313.5300

Fax: +1.919.869.2733

www.cree.com/wireless

the Cree logo are registered trademarks of Cree, Inc.

CGH55015-TB Demonstration Amplier Circuit Bill of Materials

Designator Description Qty

C1 CAP, 1.2pF, +/-0.1 pF, 0603, ATC 600S 1

C2 CAP, 0.3pF, +/-0.05 pF, 0402, ATC 600L 1

C9 CAP, 0.5pF,+/-0.05pF, 0603, ATC 600S 1

C4,C11 CAP, 18pF, +/-5%, 0603, ATC 600S 2

C5,C12 CAP, 39pF +/-5%, 0603, ATC 600S 2

C6,C13 CAP, CER, 180pF, 50V, +/-5%, C0G, 0603 2

C7,C14 CAP, CER, 0.1UF, 50V, +/-10%, X7R, 0805 2

C8 CAP, 10UF, 16V, SMT, TANTALUM 1

C15 CAP, 1.0UF ±10%, 100V, 1210, X7R 1

C16 CAP, 33UF, 100V, ELECT, FK, SMD 1

R1 RES, 1/16W, 0603, 1%, 562 OHMS 1

R2 RES, 1/16W, 0603, 1%, 22 OHMS 1

J1 HEADER RT> PLZ .1 CEN LK 5 POS 1

J3,J4 CONN, SMA, FLANGE 2

- PCB, RO4350B, Er = 3.48, h = 20 mil 1

-CGH55015 1

CGH55015-TB Demonstration Amplier Circuit

7CGH55015F2_P2 Rev 3.1

Cree, Inc.

4600 Silicon Drive

Durham, North Carolina, USA 27703

USA Tel: +1.919.313.5300

Fax: +1.919.869.2733

www.cree.com/wireless

the Cree logo are registered trademarks of Cree, Inc.

CGH55015-TB Demonstration Amplier Circuit Schematic

CGH55015-TB Demonstration Amplier Circuit Outline

8CGH55015F2_P2 Rev 3.1

Cree, Inc.

4600 Silicon Drive

Durham, North Carolina, USA 27703

USA Tel: +1.919.313.5300

Fax: +1.919.869.2733

www.cree.com/wireless

the Cree logo are registered trademarks of Cree, Inc.

Typical Package S-Parameters for CGH55015F2 / CGH55015P2

(Small Signal, VDS = 28 V, IDQ = 200 mA, angle in degrees)

Frequency Mag S11 Ang S11 Mag S21 Ang S21 Mag S12 Ang S12 Mag S22 Ang S22

500 MHz 0.911 -130.86 18.44 105.32 0.022 19.38 0.302 -113.00

600 MHz 0.906 -139.86 15.82 99.40 0.023 14.28 0.299 -120.56

700 MHz 0.902 -146.89 13.81 94.44 0.023 10.15 0.298 -126.20

800 MHz 0.900 -152.58 12.23 90.14 0.023 6.68 0.299 -130.51

900 MHz 0.898 -157.33 10.97 86.29 0.023 3.69 0.302 -133.91

1.0 GHz 0.897 -161.38 9.93 82.79 0.023 1.03 0.305 -136.65

1.1 GHz 0.896 -164.92 9.06 79.53 0.023 -1.36 0.309 -138.93

1.2 GHz 0.895 -168.07 8.33 76.47 0.023 -3.55 0.314 -140.86

1.3 GHz 0.895 -170.92 7.71 73.56 0.023 -5.58 0.320 -142.55

1.4 GHz 0.895 -173.52 7.17 70.77 0.023 -7.47 0.326 -144.06

1.5 GHz 0.894 -175.93 6.70 68.08 0.023 -9.25 0.332 -145.44

1.6 GHz 0.894 -178.19 6.29 65.47 0.023 -10.93 0.338 -146.73

1.7 GHz 0.894 179.68 5.92 62.93 0.023 -12.52 0.345 -147.96

1.8 GHz 0.894 177.66 5.60 60.44 0.023 -14.04 0.351 -149.13

1.9 GHz 0.894 175.72 5.31 58.01 0.022 -15.49 0.358 -150.28

2.0 GHz 0.894 173.85 5.04 55.62 0.022 -16.88 0.365 -151.42

2.1 GHz 0.895 172.04 4.80 53.26 0.022 -18.21 0.372 -152.54

2.2 GHz 0.895 170.28 4.59 50.93 0.022 -19.48 0.379 -153.66

2.3 GHz 0.895 168.57 4.39 48.64 0.022 -20.69 0.386 -154.78

2.4 GHz 0.895 166.88 4.21 46.37 0.021 -21.85 0.393 -155.92

2.5 GHz 0.895 165.22 4.04 44.11 0.021 -22.96 0.400 -157.06

2.6 GHz 0.895 163.58 3.88 41.88 0.021 -24.02 0.407 -158.21

2.7 GHz 0.895 161.97 3.74 39.67 0.021 -25.02 0.413 -159.37

2.8 GHz 0.896 160.36 3.61 37.47 0.020 -25.97 0.420 -160.55

2.9 GHz 0.896 158.76 3.49 35.28 0.020 -26.87 0.426 -161.75

3.0 GHz 0.896 157.17 3.37 33.11 0.020 -27.72 0.433 -162.96

3.2 GHz 0.896 153.99 3.17 28.79 0.019 -29.24 0.445 -165.43

3.4 GHz 0.896 150.81 2.99 24.49 0.019 -30.53 0.456 -167.97

3.6 GHz 0.897 147.59 2.83 20.21 0.018 -31.57 0.467 -170.58

3.8 GHz 0.897 144.34 2.69 15.94 0.018 -32.35 0.477 -173.26

4.0 GHz 0.897 141.03 2.56 11.67 0.017 -32.86 0.487 -176.01

4.2 GHz 0.897 137.66 2.45 7.39 0.017 -33.08 0.496 -178.84

4.4 GHz 0.897 134.20 2.35 3.09 0.017 -33.02 0.504 178.25

4.6 GHz 0.897 130.65 2.26 -1.24 0.016 -32.67 0.511 175.25

4.8 GHz 0.897 127.01 2.18 -5.61 0.016 -32.06 0.517 172.16

5.0 GHz 0.896 123.25 2.11 -10.03 0.016 -31.23 0.523 168.97

5.2 GHz 0.896 119.37 2.04 -14.50 0.016 -30.22 0.528 165.68

5.4 GHz 0.896 115.36 1.98 -19.04 0.016 -29.11 0.532 162.26

5.6 GHz 0.896 111.21 1.92 -23.65 0.016 -27.99 0.536 158.72

5.8 GHz 0.895 106.92 1.87 -28.34 0.017 -26.98 0.539 155.04

6.0 GHz 0.895 102.47 1.83 -33.12 0.017 -26.15 0.541 151.21

Download this s-parameter le in “.s2p” format at http://www.cree.com/products/wireless_s-parameters.asp

9CGH55015F2_P2 Rev 3.1

Cree, Inc.

4600 Silicon Drive

Durham, North Carolina, USA 27703

USA Tel: +1.919.313.5300

Fax: +1.919.869.2733

www.cree.com/wireless

the Cree logo are registered trademarks of Cree, Inc.

Product Dimensions CGH55015F2 (Package Type — 440166)

Product Dimensions CGH55015P2 (Package Type — 440196)

10 CGH55015F2_P2 Rev 3.1

Cree, Inc.

4600 Silicon Drive

Durham, North Carolina, USA 27703

USA Tel: +1.919.313.5300

Fax: +1.919.869.2733

www.cree.com/wireless

the Cree logo are registered trademarks of Cree, Inc.

Disclaimer

Specications are subject to change without notice. Cree, Inc. believes the information contained within this data sheet

to be accurate and reliable. However, no responsibility is assumed by Cree for any infringement of patents or other

rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent

or patent rights of Cree. Cree makes no warranty, representation or guarantee regarding the suitability of its products

for any particular purpose. “Typical” parameters are the average values expected by Cree in large quantities and are

provided for information purposes only. These values can and do vary in different applications and actual performance

can vary over time. All operating parameters should be validated by customer’s technical experts for each application.

Cree products are not designed, intended or authorized for use as components in applications intended for surgical

implant into the body or to support or sustain life, in applications in which the failure of the Cree product could result

in personal injury or death or in applications for planning, construction, maintenance or direct operation of a nuclear

facility.

For more information, please contact:

Cree, Inc.

4600 Silicon Drive

Durham, North Carolina, USA 27703

www.cree.com/wireless

Sarah Miller

Marketing & Export

Cree, RF Components

1.919.407.5302

Ryan Baker

Marketing

Cree, Wireless Devices

1.919.287.7816

Tom Dekker

Sales Director

Cree, Wireless Devices

1.919.313.5639