TBD62003A series, TBD62004A series
2015-07-24
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©2015 Toshiba Corpor ation
TOSHIBA BiCD Integrated Circuit Silicon Mono lithic
TBD62003APG, TBD62003AFG, TBD62003AFNG, TBD62003AFWG
TBD62004APG, TBD62004AFG, TBD62004AFNG, TBD62004AFWG
7channel sin k type DMOS transistor arr ay
TBD62003A series and TBD62004A series are DMOS
transistor array with 7 circuits. It has a clamp diode for
switching inductive loads built-in in each output. Please be
careful about t hermal conditions during use.
Features
• 7 circuits built-in
• High voltage : VOUT = 50 V (MAX)
• High current : IOUT = 500 mA/ch (MAX)
• Input voltage(output on) : TBD62003A series 2.5 V (MIN)
TBD62004A series 7.0 V (MIN)
• Input voltage(output off) : TBD62003A series 0.6 V (MAX)
TBD62004A series 1.0 V (MAX)
• Package : PG type DIP16-P-300-2.54A
FG type SOP16-P-225-1.27
FNG type SSOP16-P-225-0.65B
FWG type P-SOP16-0410-1.27-002
Pin connection (top view)
Pin connection may be simp lified for ex planatory purpose.
TBD62003APG,TBD62004APG
DIP16-P-300-2.54A
TBD62003AFG,TBD62004AFG
SOP16-P-225-1.27
TBD62003AFNG,TBD62004AFNG
SSOP16-P-225-0.65B
TBD62003AFWG,TBD62004AFWG
P-SOP16-0410-1.27-002
Weight
DIP1
6-P-300-2.54A : 1.11 g (Typ.)
SOP1
6-P-225-1.27 : 0.16 g (Typ.)
S
SOP16-P-225-0.65B : 0.07 g (Typ.)
P-SOP16-0410-1.27-002 : 0.15 g (Typ.)
TBD62003A series, TBD62004A series
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©2015 Toshiba Corpor ation
Pin explanati ons
Pin No. Pin name Function
1
I1
Input pin
2
I2
Input pin
3
I3
Input pin
4
I4
Input pin
5
I5
Input pin
6
I6
Input pin
7
I7
Input pin
8
GND
GND pin
9
COMMON
Common pin
10
O7
Output pin
11
O6
Output pin
12
O5
Output pin
13
O4
Output pin
14
O3
Output pin
15
O2
Output pin
16
O1
Output pin
Equivalent circuit (each driver)
Equivalent circuit may be simpli f ied for expla nat or y purpose.
Clamp
INPUT
COMMON
OUTPUT
Clamp diode
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©2015 Toshiba Corpor ation
Absolute Maximum Ratings (Ta = 25°C)
Characteristics Symbol Rating Unit
Output voltage
V
OUT
50
V
COMMON pin voltage
V
COM
−0.5 to 50
V
Output cur r ent
I
OUT
500
mA/ch
Input v oltage
V
IN
−0.5 to 30
V
Clamp diod e r everse voltage
V
R
50
V
Clamp diod e f or ward current
I
F
500
mA
Power
dissipation
PG (Note 1)
PD
1.47
W
FG (Note 2)
0.625
FNG (Note 3)
0.78
FWG (Not e 4)
1.25
Operatin g t emperature
T
opr
−40 to 85
°C
Storage t em per at ur e
T
stg
−55 to 150
°C
Note 1: Device a lone. Wh en Ta exce eds 25°C, it is necessary to do the derating with 11.8 mW/°C.
Note 2: On PCB (Size: 30 mm × 30 m m × 1.6 mm, Cu area: 50%, single-side glass epoxy).
When Ta excee ds 25°C, it is necessary to do the derating with 5 mW/°C.
Note 3: On PCB (Size: 50 mm × 50 mm × 1.6 mm, Cu area: 40%, single-side glass epoxy).
When Ta excee ds 25°C, it is necessary to do the derating with 6.24 mW/°C.
Note 4: On PCB (JEDEC 2s2p).
When Ta excee ds 25°C, it is necessary to do the derating with 10 mW/°C.
TBD62003A series, TBD62004A series
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©2015 Toshiba Corpor ation
Operating Ranges (Ta = −40 to 85°C)
Characteristics Symbol
Condition Min Typ. Max Unit
Output voltage
V
OUT
―
―
―
50
V
COMMO N pi n voltage
V
COM
―
0
―
50
V
Output
current
PG(Note 1)
IOUT
1 circuits ON, Ta = 25°C
0
―
400
mA/ch
tpw = 25 ms
7 circuits ON
Ta = 85°C
Tj = 120°C
Duty = 10%
0
―
400
Duty = 50% 0 ― 190
FG(Note 2)
1 circuits ON, Ta = 25°C
0
―
400
tpw = 25 ms
7 circuits ON
Ta = 85°C
Tj = 120°C
Duty = 10%
0
―
270
Duty = 50% 0 ― 120
FNG(Note 3)
1 circuits ON, Ta = 25°C
0
―
400
tpw = 25 ms
7 circuits ON
Ta = 85°C
Tj = 120°C
Duty = 10%
0
―
300
Duty = 50% 0 ― 130
FWG(Note 4)
1 circuits ON, Ta = 25°C
0
―
400
tpw = 25 ms
7 circuits ON
Ta = 85°C
Tj = 120°C
Duty = 10%
0
―
390
Duty = 50% 0 ― 170
Input v oltage
(Output on)
TBD62003A
series VIN
(ON)
IOUT = 100 mA or upper , VOUT = 2 V
2.5 ― 25 V
TBD62004A
series IOUT = 100 mA or upper, VOUT = 2 V
7.0 ― 25
Input v oltage
(Output off)
TBD62003A
series VIN
(OFF)
IOUT = 100 μA or less, VOUT = 2 V 0 ― 0.6 V
TBD62004A
series IOUT = 100 μA or less, VOUT = 2 V 0 ― 1.0
Clamp diod e f or ward current
I
F
―
―
―
400
mA
Note 1: Device a lone.
Note 2: On PCB (Size: 30 mm × 30 m m × 1.6 mm, Cu area: 50%, single-side glass e poxy).
Note 3: On PCB (Size: 50 mm × 50 mm × 1.6 mm, Cu area: 40%, single-side glass epoxy).
Note 4: On PCB (J E DEC 2s2p).
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Electrical Characteristics (Ta = 25°C unless otherwise noted)
Characteristics Symbol
Test
Circuit
Condition Min Typ. Max Unit
Output lea kage current Ileak 1
V
OUT
= 50V,
Ta = 85 °C
VIN = 0 V ― ― 1.0 μA
Output voltage
(Output
ON-resistance)
TBD62003A
series
VDS
(RON) 2
I
OUT
= 350 mA,
VIN =5.0V ― 0.7
(2.0) 1.14
(3.25)
V
(Ω)
I
OUT
= 200 mA,
VIN =5.0V ― 0.4
(2.0) 0.65
(3.25)
I
OUT
= 100 mA,
VIN =5.0V ― 0.2
(2.0) 0.325
(3.25)
TBD62004A
series
I
OUT
= 350 mA,
VIN =7.0V ― 0.7
(2.0)
1.14
(3.25)
I
OUT
= 200 mA,
VIN =7.0V ― 0.4
(2.0) 0.65
(3.25)
I
OUT
= 100 mA,
VIN =7.0V ― 0.2
(2.0) 0.325
(3.25)
Input current
(Output on)
TBD62003A
series IIN (O N) 3 VIN = 2.5 V ― ― 0.1 mA
TBD62004A
series VIN = 7.0 V ― ― 0.5
Input current(Output off)
I
IN (OFF)
4
V
IN
= 0 V, Ta = 85°C
―
―
1.0
μA
Input v oltage
(Output on)
TBD62003A
series VIN (ON)
5 IOUT = 100 mA,
VOUT = 2 V
― ― 2.5 V
TBD62004A
series ― ― 7.0
Clamp diode
reverse current IR 6
V
R
= 50 V,
Ta = 85°C ― ― 1.0 μA
Clamp diode
forward voltage
VF 7 IF = 350 mA ― ― 2.0 V
Turn−on delay
t
ON
8
V
OUT
= 50 V
RL = 125 Ω
CL = 15 pF
―
0.4
―
μs
Turn−off delay tOFF ― 0.8 ―
TBD62003A series, TBD62004A series
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©2015 Toshiba Corpor ation
Test circuit
1. Ileak 2. VDS (RON)
3. IIN (ON) 4. IIN (OFF)
5. VIN (ON) 6. IR
7. VF
Test circuit may be simpl i f ied for expla natory purpose.
COMMON
OUTPUT
INPUT
GND
IOUT
VIN
VDS
RON = VDS / IOUT
COMMON
OUTPUT
INPUT
GND
IOUT
VIN(ON)
VOUT
COMMON
OUTPUT
INPUT
GND
IR
VR
COMMON
OUTPUT
INPUT
GND
IF
VF
COMMON
OUTPUT
INPUT
GND
VOUT
Ileak
COMMON
INPUT
GND
VIN
IIN(ON)
OUTPUT
COMMON
INPUT
GND
IIN(OFF)
OUTPUT
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©2015 Toshiba Corpor ation
8. tON, tOFF
Note 1: Pul se width 50 μs, Duty cycle 10%
Output i mpe dance 50 Ω, tr ≤ 5 ns, tf ≤ 10 ns
Please refer t o t he following t able for the VIH condition.
Product
VIH
TBD62003A series
5.0 V
TBD62004A serise
7.0 V
Note 2: CL includes the probe and the test board capacitance.
Test circuit and timing chart may be simpli f ied for explanatory purpose.
Precautions for Us i ng
This IC does not include built-in protection circuits f or excess current or overvoltag e.
If this IC is sub ject ed to excess current or overvolt age, it may be destroyed.
Hence, the utmost care must be taken when syst ems which incorporat e t his IC are designed.
Utmost care is necessary in the design of the out put line, COMMO N and GND line since IC may be
destroy ed due t o short−circuit betw een outputs, air contamination fault, or fault by impro per gr ounding.
(Note 2)
(Note 1)
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Package Dimensions
DIP16-P-300-2.54A Unit: mm
Weight: 1.11 g (Typ.)
SOP16-P-225-1.27 Unit: mm
Weight: 0.16 g (Typ.)
TBD62003A series, TBD62004A series
2015-07-24
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©2015 Toshiba Corpor ation
SSOP16-P-225-0.65B Unit: mm
Weight: 0.07 g (Typ.)
P-SOP16-0410-1.27-002 Unit: mm
Weight: 0.15 g (Typ.)
TBD62003A series, TBD62004A series
2015-07-24
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©2015 Toshiba Corpor ation
Notes on Contents
1. Pin connection
Pin connect i on may be simplified for explanatory purpose.
2. Equivalent Circuits
Equivalent circuit may be simpli f ied for expla nat or y purpose.
3. Test circuit
Test circuit may be simpl i f ied for expla natory purpose.
4. Timing chart
Timing charts may be simplified for expl anat or y purposes.
IC Usage Considerations
Notes on handling of ICs
(1) The absolute maximum ratings of a semiconductor device are a set of ratings that must not be exceeded, even for
a moment. Do not exceed any of these ratings.Exceeding the rating(s) may cause device breakdown, damage or
deterioration, and may result in injury by explosion or combustion.
(2) Do not insert devices in the wrong orientation or incorrectly.Make sure that the positive and negative terminals
of power supplies are connected properly.Otherwise, the current or power consumption may exceed the absolute
maximum rating, and exceeding the rating(s) may cause device breakdown, damage or deterioration, and may
result in injury by explosion or combustion.In addition, do not use any device inserted in the wrong orientation
or incorrectly to which current is applied even just once.
(3) Use an appropriate power supply fuse to ensure that a large current does not continuously flow in the case of
overcurrent and/or IC failure. The IC will fully break down when used under conditions that exceed its absolute
maximum ratings, when the wiring is routed improperly or when an abnormal pulse noise occurs from the
wiring or load, causing a large current to continuously flow and the breakdown can lead to smoke or ignition. To
minimize the effects of the flow of a large current in the case of breakdown, appropriate settings, such as fuse
capacity, fusing time and insertion circuit location, are required.
(4) If your design includes an inductive load such as a motor coil, incorporate a protection circuit into the design to
prevent device malfunction or breakdown caused by the current resulting from the inrush current at power ON
or the negative current resulting from the back electromotive force at power OFF. IC breakdown may cause
injury, smoke or ignition.Use a stable power supply with ICs with built-in protection functions. If the power
supply is unstable, the protection function may not operate, causing IC breakdown. IC breakdown may cause
injury, smoke or ignition.
(5) Carefully select external components (such as inputs and negative feedback capacitors) and load components
(such as speakers), for example, power amp and regulator.If there is a large amount of leakage current such as
from input or negative feedback condenser, the IC output DC voltage will increase. If this output voltage is
connected to a speaker with low input withstand voltage, overcurrent or IC failure may cause smoke or ignition.
(The overcurrent may cause smoke or ignition from the IC itself.) In particular, please pay attention when using
a Bridge Tied Load (BTL) connection-type IC that inputs output DC voltage to a speaker directly.
Points to reme m ber on handling of ICs
Heat Radiation Design
When using an IC with large current flow such as power amp, regulator or driver, design the device so that heat is
appropriately radiated, in order not to exceed the specified junction temperature (TJ) at any time or under any condition.
These ICs generate heat even during normal use. An inadequate IC heat radiation design can l ead to decrease in IC life,
deterioration of IC characteristics or IC breakdown. In addition, when designing the device, take into consideration the
effect of IC heat radiation with peripheral components.
Back-EMF
When a motor rotates in the reverse direction, stops or slows abruptly, current flows back to the motor’s power supply
owing to the effect of back-EMF. If the current sink capability of the power supply is small, the device’s motor power
supply and output pins might be exposed to conditions beyond the absolute maximum ratings. To avoid this problem, take
the effect of back-EMF into consid eration in system design.
TBD62003A series, TBD62004A series
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©2015 Toshiba Corpor ation
RESTRICTIONS ON PRODUCT USE
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